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MI38T datasheet (1)

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MEL82

Abstract: MI38T MIB38T MIB38T-K
Text: CRO MI38T MIB38T (MIB38T-K) INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MEB38T are mechanically and spectrally , = 10 s, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI38T , -99 MECHANICAL OUTLINE MI38T 02.97 "(0.117) 4A (0.16) 0.75 (0.03)— max. 0.5 (0.02) 16.3 (0.64) min


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PDF MI38T MIB38T MIB38T-K) MI38T MIB38T MEB38T MEL82 100mA MIB38T-K
MEL82

Abstract: MI38T MIB38T MIB38T-K
Text: CRO MI38T MIB38T (MIB38T-K) INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MJB38T are mechanically and spectrally , = 10 s, Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI38T , -9S MECHANICAL OUTLINE MI38T 02.97 "(0.117) 4T (0.16) 1_ 0.75 (0.03)- max. 0.5 (0.02) 16.3 (0.64) mn


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PDF MI38T MIB38T MIB38T-K) MI38T MIB38T MJB38T MEL82 100mA MIB38T-K
MEL82

Abstract: MI38T MIB38T MIB38T-K
Text: MI38T MIB38T (MIB38T-K) INFRARED EMITTING DIODE DESCRIPTION MI38T & MIB38T are GaAlAs infrared emitting diode molded flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, MI38T & MIB38T are mechanically and spectrally matched to the MEL82 series photo transistor. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward , =25°C) PARAMETER SYMBOL MI38T MEB38T UNIT CONDITIONS Radiant Power Output TYP Po 2.Ö 2.5 mW IF=20mA Forward


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PDF MI38T MIB38T MIB38T-K) MI38T MIB38T MEL82 MIB38T-K
ML309

Abstract: MIB37T MI51T MI38T MI37T MI32TA MI32T MI31TA MI31T MIB51T
Text: Infrared Emitting Diodes TYPEE NO. (nm) P 0 TYP (mW) y 2 91/2 (degree) 1 MI38T MIB38T 940 940 2.0 2.0 20 20 2.0 2.0 100 100 30 20 03.0mm flangeless Low profile lens 1-45a 1-45b MI51T M151 TA 940 880 1.0 5.0 20 50


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PDF MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T 1-45a 1-45b ML309 MI51T MIB51T
Not Available

Abstract: No abstract text available
Text: MI 3 8 T & MIB38T are GaAlAs infrared emitting d i o d e m olded in a flangless 3mra 0 clear plastic package, with the lensing effect of the package, and MIB38T with cup type leadframe, it has an narrow radiation angle m e a s u r e d from the optical axis to the half power point. MI38T & MIB38T are mechanically and s p e c t rally matched to the MEL82 series photo transistor. MI38T-K MIB38T-K *fel m . 1 3 A B S O L U T S M A X I M U M RATINGS Forward C u r rent {Continuous) Pulse Forward


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PDF MIB38T MI38T MEL82 MI38T-K MIB38T-K 100mA
ML309

Abstract: No abstract text available
Text: MICRO ELECTRONICS LTD SIE D bOT17flfi GOÜ1G1S TTH MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE NO. MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T - MI51T MI51TA - MIB51T MIB51TA MIB57T-J MIB57T-K Àp (nm) 940 880 940 880 940 940 940 940 940 880 940 880 940 940 p 0 TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 1 (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 V f MAX (V) 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 1 (mA) 20 20 20 20 100


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PDF bOT17flfi MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T MI51T ML309
MEL82

Abstract: MI38T
Text: CKU npn silicon photo transistor description MEL82 is NPN silicon planar photo-transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. It features ultra high illumination sensitivity, fast response time, and spectrally matched with the infra-red emitter MI38T series. ABSOLUTE MAXIMUM ratings Collector-Emitter Voltage Emitter-Collector Voltage Continuous Power Dissipation -Operating Junction Temperature Storage Temperature Range


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PDF MEL82 MI38T 20mW/cm2
MEL82

Abstract: MI38T
Text: CRO MEL82 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL82 is NPN silicon planar photo-transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. It features ultra high illumination sensitivity, fast response time, and spectrally matched with the infra-red emitter MI38T series. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage Emitter-Collector Voltage Continuous Power Dissipation -Operating Junction Temperature Storage Temperature Range 02.97 VCEO VECO Pd Tj


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PDF MEL82 MI38T 20mW/cm3 100ohm
ML309

Abstract: No abstract text available
Text: Infrared Emitting Diodes TYPE NO. Xp (ran) Po TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 IF (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 VF MAX 00 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 IF (mA) 20 20 20 20 100 100 100 100 20 20 20 20 100 100 2 0 Vi (degree) 35 35 35 35 30 18 30 20 50 50 40 40 20 60 PACKAGE CASE NO. 1-4 1-61 1-7 1-8 1-62 1-11 1-15 1-16 1-16 MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA MIB51T


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PDF MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA ML309
2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
Text: MH8500 MH8700 MI31T MI31TA MI32T MI32TA MI33T MI38T MI51T MI51TA MIB33T MIB38T MIB51T MIB51TA MIB57T-J


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PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
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