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MI33T datasheet (1)

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MI33T

Abstract: MIB33T
Text: MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic • package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor. ABSOLUTE MAXIMUM RATINGS 100mA 1A* 5V lOOmW -20 to +9G°C 260°C for 5 , /16" from body) ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI33T MIB33T UNIT


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PDF MI33T MIB33T MI33T MEL81N 100mA 10/xs,
MI33T

Abstract: MIB33T em micro
Text: DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic • package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor. ABSOLUTE , , Duty Ratio = 0.01. ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI33T MIB33T UNIT , 0181-5 100mA 1A* 5V lOOmW -20 to +90°C 260°C for 5 sec. MI33T A (0.2) 1 0.75(0.03)_ max. .4


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PDF MI33T MIB33T MEL81N 10/xs, MI33T 100mA em micro
MI33T

Abstract: MIB33T
Text: DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a fiangefess 3mm diameter clear plastic • package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor. ABSOLUTE , CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL MI33T MIB33T UNIT CONDITIONS Radiant Power Output MIN Po 2.0 2.5 mW , No. 2341 0321 TeSex.43510 Micro Hx. Tei: 2343 0181-5 MECHANICAL OUTLINE MI33T (0.2) 'HI


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PDF MI33T MIB33T MEL81N 100mA 10/xs, MI33T
ML309

Abstract: No abstract text available
Text: Infrared Emitting Diodes TYPE NO. Xp (ran) Po TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 IF (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 VF MAX 00 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 IF (mA) 20 20 20 20 100 100 100 100 20 20 20 20 100 100 2 0 Vi (degree) 35 35 35 35 30 18 30 20 50 50 40 40 20 60 PACKAGE CASE NO. 1-4 1-61 1-7 1-8 1-62 1-11 1-15 1-16 1-16 MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA MIB51T


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PDF MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA ML309
Not Available

Abstract: No abstract text available
Text: Diodes TYPE NO. M I3JT MI31TA MI32T MI32TA MI33T MIB33T M I38T MIB38T MI51T M151TA MIB51T MIB51TA M


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PDF MOGB517W MSB557D MSB557TA MSB557DA MOB557D MOB557DR MGB557D MSB558DA MSB559TA
2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
Text: MH8500 MH8700 MI31T MI31TA MI32T MI32TA MI33T MI38T MI51T MI51TA MIB33T MIB38T MIB51T MIB51TA MIB57T-J


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PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
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