The Datasheet Archive

MI32T datasheet (6)

Part Manufacturer Description Type PDF
MI32T Micro Electronics Semiconductor Device Data Book Scan PDF
MI32T Micro Electronics INFRARED EMITTING DIODE Scan PDF
MI32TA Micro Electronics Semiconductor Device Data Book Scan PDF
MI32TA Micro Electronics INFRARED EMITTING DIODE Scan PDF
MI32T-L Micro Electronics 6V infrared emitting diode Scan PDF
MI32T-L Micro Electronics INFRARED EMITTING DIODE Scan PDF

MI32T Datasheets Context Search

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Not Available

Abstract:
Text: CRO MI32T INFRARED EMITTING DIODE 02.94 DESCRIPTION MI32T is GaAlAs infrared emiitting diode molded in 3mm diameter clear transparent lens. 1.02 j (0.04) 0.75(0.03} i -2.5(0.1) • • • ABSOLUTE MAXIMUM RATINGS All dimension in mm(inch) No Scale Toi. : +/-0.3mm Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) 100mA 1A* 6V


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PDF MI32T MI32T 100mA 160mW
MI32T

Abstract:
Text: MI32T INFRARED EMITTING DIODE 02.94 DESCRIPTION MI32T is GaAlAs infrared emiitting diode molded in 3 mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) -2.5(0.1} • All dimension in mm(inch) • No Scaie • To!. : +/-0.3mm 100mA 1A* 6V 16öm W -25 to +85°C 260°C for 5 sec. * Pulse Width - 10¿¿s, Duty Ratio = 0.01


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PDF MI32T 100mA IF-20mA
MI32T

Abstract:
Text: CRO MI32T INFRARED EMITTING DIODE 02.94 DESCRIPTION MI32T is GaAlAs infrared emiitting diode molded in 3mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) * Pulse Width = lOfiS, Duty Ratio = 0.01. 5.32 (0.21) L 1.0TT (0.04) 0.75(0.03) max. -2.5(0.1) • All dimension in mm(inch) • No Scale • Toi


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PDF MI32T MI32T 100mA 160mW
ML309

Abstract:
Text: MICRO ELECTRONICS LTD SIE D bOT17flfi GOÜ1G1S TTH MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE NO. MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T - MI51T MI51TA - MIB51T MIB51TA MIB57T-J MIB57T-K Àp (nm) 940 880 940 880 940 940 940 940 940 880 940 880 940 940 p 0 TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 1 (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 V f MAX (V) 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 1 (mA) 20 20 20 20 100


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PDF bOT17flfi MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T MI51T ML309
ML309

Abstract:
Text: Infrared Emitting Diodes TYPEE NO. (nm) P 0 TYP (mW) y 2 91/2 (degree) 1 MI32T MI32TA 940 880 0.5 2.8 20 20 1.6 1.8 20 20 35 35 T-1 standard 03.0mm 1-43 MI37T MIB37T 940 940 2.0 2.0 20 20 2.0 2.0 100 100 30 18 03.0mm flangeless 1-9 1-44 MI38T MIB38T 940 940 2.0 2.0 20 20 2.0 2.0 100 100 30 20 03.0mm flangeless Low profile lens 1-45a 1-45b MI51T M151 TA 940 880 1.0 5.0 20 50


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PDF MI31T MI31TA MI32T MI32TA MI37T MIB37T MI38T MIB38T 1-45a 1-45b ML309 MI51T
ML309

Abstract:
Text: Infrared Emitting Diodes TYPE NO. Xp (ran) Po TYP (mW) 0.5 2.8 0.5 2.8 2.0 2.0 2.0 2.0 1.0 5.0 4.0 8.0 2.62 2.62 IF (mA) 20 20 20 20 20 20 20 20 20 50 20 50 20 20 VF MAX 00 1.6 1.8 1.6 1.8 2.0 2.0 2.0 2.0 1.6 1.8 1.6 1.8 2.0 2.0 IF (mA) 20 20 20 20 100 100 100 100 20 20 20 20 100 100 2 0 Vi (degree) 35 35 35 35 30 18 30 20 50 50 40 40 20 60 PACKAGE CASE NO. 1-4 1-61 1-7 1-8 1-62 1-11 1-15 1-16 1-16 MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA MIB51T


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PDF MI31T MI31TA MI32T MI32TA MI33T MIB33T MI38T MIB38T MI51T MI51TA ML309
Not Available

Abstract:
Text: CRO MI32TA IN FR A R ED E M IT T IN G D IO D E 02.94 D ESC R IPTIO N MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. • • • ABSOLUTE M A X IM U M R A TIN G S Ail dimension in mm(inch) No Scale Toi. : +/-0.3mm Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature , 0181-5 ) ) ) MI32T / 20* RELATIVE IN TEN SITY 0° Wavelength ? 0.2 SPATI AL


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PDF MI32TA MI32TA 100mA 180mW MI32T/
Not Available

Abstract:
Text: Diodes TYPE NO. M I3JT MI31TA MI32T MI32TA MI33T MIB33T M I38T MIB38T MI51T M151TA MIB51T MIB51TA M


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PDF MOGB517W MSB557D MSB557TA MSB557DA MOB557D MOB557DR MGB557D MSB558DA MSB559TA
2SA532

Abstract:
Text: MH8500 MH8700 MI31T MI31TA MI32T MI32TA MI33T MI38T MI51T MI51TA MIB33T MIB38T MIB51T MIB51TA MIB57T-J


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PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
Not Available

Abstract:
Text: CRO DESCRIPTION MI32T-L is GaAlAs infrared emiitting diode molded in 3mm diameter clear transparent lens. MI32T-L INFRARED EMITTING DIODE ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) * Pulse Width = 10ns, Duty Ratio = 0.01. 100mA 1A* 6V 160mW -25 to + 8 5 °C 260°C for 5 sec. ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Radiant Power Output Forward


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PDF MI32T-L MI32T-L 100mA 160mW
2011 - SPRUH18E

Abstract:
Text: No file text available


Original
PDF TMS320x2806x SPRUH18E SPRUH18E
MI32T-L

Abstract:
Text: MI32T-L INFRARED EMITTING DIODE 02.94 DESCRIPTION MI32T-L is GaAlAs infrared emiitting diode molded in 3mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) 5,!J2 (0.21) 1.02J (0.04) 0.75{0.03)_j max. -2.5(0.1) • AH dimension in mm(inch) • No Scale • Toi. : +/-0.3mm 100mA 1A* ÓV 160mW -25 to +85°C 260°C for 5 sec. * Pulse


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PDF MI32T-L 100mA 160mW IF-50mA
MI32TA

Abstract:
Text: DESCRIPTION MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) MI32TA INFRARED EMITTING DIODE 02.94 (0.116) -2.5(0.1) • Aff dimension in mm(inch) • No Scaie • Toi. : +/-0.3mm 100mA 1A* 6V 180mW -25 to +85°C 260°C for 5 sec. Pulse Width = 10/iS, Duty Ratio = 0.01


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PDF MI32TA 100mA 180mW 10/iS, IF-20mA
MI32T-L

Abstract:
Text: CRO MI32T-L INFRARED EMITTING DIODE DESCRIPTION MI32T-L is GaAlAs infrared einiitting diode molded in 3mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) * Pulse Width = lO^ts, Duty Ratio = 0.01. 02.94 "(0.116) 5.32 (0.21) I lJ= i.oFf (0.04) 0.75(0.03) -2.5(0.1) • All dimension in mm(inch) • No Scale


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PDF MI32T-L MI32T-L 100mA 160mW IF-50mA
Not Available

Abstract:
Text: MI32T-L INFRARED EMITTING DIODE 02.94 DESCRIPTION MI32T-L is GaAlAs infrared emiitting diode molded in 3mm diameter clear transparent lens. • • • ABSOLUTE MAXIMUM RATINGS All dimension in mm(inch) No Scale Toi. : +/-0.3mm Forward Current (Continuous) Pulse Forward Current 100mA Reverse Voltage (Continuous) 6V Power Dissipation Operating Temperature Range 160mW -25 to + 8 5 ° C 1A * Lead Soldering Tem perature (1/16" frorr body) 260 °C for 5 sec


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PDF MI32T-L MI32T-L 100mA 160mW
MI32TA

Abstract:
Text: CRO MI32TA INFRARED EMITTING DIODE DESCRIPTION MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current (Continuous) Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation Operating Temperature Range Lead Soldering Temperature (1/16" from body) * Pulse Width = lOfxs, Duty Ratio = 0.01. 02.94 0.5 (0.02) -2.5(0.1) • Ail dimension in mm(inch) • No Scale • Toi. : +/-0.3mm 100mA 1A* 6V 180mW


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PDF MI32TA MI32TA 100mA 180mW
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