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MH8100 datasheet (4)

Part Manufacturer Description Type PDF
MH8100 Micro Electronics EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT Scan PDF
MH8100 Micro Electronics Semiconductor Device Data Book Scan PDF
MH8100 Others Shortform Transistor PDF Datasheet Scan PDF
MH8100F Micro Electronics 5V NPN silicon power transistor Scan PDF

MH8100 Datasheets Context Search

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BC238 h parameter

Abstract: MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 1I103 BC308 BC338
Text: c (a) 0.1 1 'c (a) 10 mh8100.mh0810 APPLICATION 1: 3W OTL AUDIO AMPLIFIER 47 K at which quiescont collector current of Q1 = 5mA. transistors Q1 : MH8100 , HFE GROUP B to C, mounted on heat sink , MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT MICRO ELECTRDNIC5 The MH8100 (NPN), MH0810 (PNP) are complementary silicon planar epitaxial transistors designed for the output , collector current of Q? = EmA. 177T TRANSISTORS Q, : MH8100 , HF GROUP 8 to C, mounted on heat sink. Q2


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PDF MH8100 MH0810 O-220B 10rnS) 100-ohms MH8100, MH0810, BC238, BC338, BC308, BC238 h parameter MH 0810C hFE Group 8100C ME8100 MH8100 MH0810 1I103 BC308 BC338
BC238 h parameter

Abstract: 5v 3w audio amplifier 5.5w
Text: AND V CE(sat) vs COLLECTOR CURRENT 'c (A) MH8100.MH0810 APPLICATION 1: 3W OTL AU D IO AM , MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT I V I I G R O ELECTRONICS The MH8100 (NPN), MH0810 (PNP) are complementary CASE TO-220B silicon planar , Q1 Q2 Q3 Q4 Q5 : : : : : MH8100 , H fe GROUP B to MH0810, HFE GROUP B to BC238, HFE GROUP B. BC338 , * 00T8HH! TRANSISTORS APPLICATION 2: 5W OTL AUDIO AMPLIFIER 47K 0 , MH8100 , HF GROUP B


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PDF MH8100 MH0810 O-220B 55KHz, 440mA 0I80HW* 00T8HH! MH8100, MH0810, BC238, BC238 h parameter 5v 3w audio amplifier 5.5w
2n6125

Abstract: No abstract text available
Text: Power Transistors TYPE POLA­ NO. RITY M AXIM UM RATINGS CASE Pd IC (mW) (A) (V) H FE VCE(sat) min CO M P L E ­ VCE max IC min MENTARY (mA) max IT IC VCEO (V) (V) (A) (MHz) TYPE 0.5 0.2 0.2 1 0.5 2 2 2 2 2 0.8 0.5 0.5 0.8 0.8 2 0.5 0.5 2 2 30 50 50 5 30 MH8100 MH8106 MH8108 , 50 50 5 5 3 MH0816 MH0818 MH0810 MH0816 MH0818 MH0870 MH8100 P P P P N TO


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PDF MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 2n6125
MH0810

Abstract: MH8100
Text: T MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT rvii The MH8100 (NPN), MH0810 (PNP) are complementary silicon planar epitaxial transistors designed for the output stages of 3—5 watt audio amplifiers. They are also suitable for switches up to 3A collector current. CASE TO-220B BCE ABSOLUTE MAXIMUM RATINGS: Collector-Emitter Voltage {VBE = 0) Collector-Emitter Voltage (Base Open) Emitter-Base Voltage Collector Current Collector Peak Current (t <10mS) Total Power Dissipation (Tc^ 25 C


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PDF MH8100 MH0810 O-220B TA-25 box6m77 MH0810 MH8100
2sc1061

Abstract: 2SC1626 2N6108
Text: Power Transistors TYPE POLA CASE NO. RITY D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 TIP29 TIP29A T1P29B TIP30 TIP30A TIP30B TIP31 TIP31A TIP31B TIP31C TIP32 TIP32A TIP32B T1P32C 2N6121 2N6122 2N6123 2N6124 2N6125 2N6126 2N6129 2N6130 2N6131 2N6288 2N6289 2N6290 2N6291 2N6292 2N6293 2N6473 2N6474 2SA473 2SA490 2SA670 2SA671 2SA816 2SB434 2SB435 2SB512 2SB512A P P P P P N N N N N , 4 4 4 4 4 4 4 100+ 3 3 3 50 3+ 3 3 3 D44C12 MH8100 MH8106 MH8108 MH8700 MH0810 MH0816 MH0818 MH0870


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PDF D45C12 MH0810 MH0816 MH0818 MH0870 MH8100 MH8106 MH8108 MH8500 MH8700 2sc1061 2SC1626 2N6108
MH0810

Abstract: MH8100
Text: MH 8100 MH 0810 COMPLEMENTARY EPITAXIAL TRANSISTORS FOR 3-.5W AF OUTPUT MICRO ELECTRONICS The MH8100 (NPN), MH0810 (PNP) are complementary silicon planar epitaxial transistors designed for the output stages of 3—5 watt audio amplifiers. They are also suitable for switches up to 3A collector current, BCE ABSOLUTE MAXIMUM RATINGS: F°r P" n-p devices, voltage and current values are negative. Colfector-Emitter Voltage (VBE = 0) VCES 35V Collector-Emitter Voltage (Base Open) VCEO 30V Emitter-Base Voltage


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PDF MH8100 MH0810 2343Q181 MH0810 MH8100
2SB512P

Abstract: tip318 TIP31N TIP308 MH0870 2sb435 TIP298 2sc1060 MH8500 MH8106
Text: Power Transistors type no. polarity case maximum ratings min hfe vce(sat) V min (MHz) complementary type Pd W) 'c (a) V ceo (V) max ■c (a) vce (V) max (V) 'c (a) MH0870 P TO-220 30 4 50 40 240 # 1 2 0.8 2 5 MH8700 MH8100 N TO-22C 12 3 30 40 240 # 0.5 2 0.8 2 30 MH0810 MH8106 INI TO-220 10 1 60 40 240 # 0.2 2 0.5 0.5 50 MH0816 IVI H8108 N TO-220 10 1 80 40 240 # 0.2 2 0.5 0.5 50 MH0818 MH8500 N TO-220 40 4 60 40 240 # 1 2 1.2 3 5 — MH8700 N TO-220 30 4 50 40 240 # 1 2 0.8


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PDF MH0870 O-220 MH8700 MH8100 O-22C MH0810 MH8106 MH0816 H8108 2SB512P tip318 TIP31N TIP308 2sb435 TIP298 2sc1060 MH8500
B0415

Abstract: b0416 B0633 b0636 BD417 BD416 BD415 MH8106 B0635 b063
Text: 0.5 1 30+ D44C12 MH0810 P TO-220 12 3 30 40 240 # 0.5 2 0.8 2 30 MH8100 MH0816 P TO-220 10 1 60 40


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PDF BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 BD417 BD416 BD415 MH8106 B0635 b063
2011 - 042c1

Abstract: 2S090 2sc2906 2S0882 mrf486 SSP62 2S0898 THA13 2sc2906a trans mje520
Text: B0361A B0329 2S01799 MJE520 042C1 MH8100 M8100 M8100 042C3 2S0882 042C2 MRF486 2N5775 2N5775 2N5775


Original
PDF 2SC643A 2SC1892 S01530 2S0898 TRM2014 TRM2504 TRM3014 TRM3504 TRM4014 042c1 2S090 2sc2906 2S0882 mrf486 SSP62 THA13 2sc2906a trans mje520
2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
Text: 111 111 111 153 ALPHANUMERIC INDEX TYPE NO. MH0870 MH7301 MH7302 MH7303 MH8100 MH8106 MH8108


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PDF 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N4004 1N4005 2SA532 BC109 BC184 BC549 BC317 2SC734 Y BC159 8 MS181A BC357 TTP31A 2SC876 ML78M06A
t110 94v 0

Abstract: PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
Text: No file text available


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PDF Barcelona-28, S-171 CH-5400 t110 94v 0 PTC SY 16P 2N2955T philips diode PH 37m 35K0 trimble R8 model 2 2sc497 2SA749 2n6259 ssi 2N4948 NJS
MH8100F

Abstract: No abstract text available
Text: MH8100F NPN SILICON POW ER TRANSISTOR DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE M AXIM UM RATINGS Collector-Emitter Voltage (V BE=0) Collector-Emitter Voltage (IB =0) Emitter-Base Voltage Collector Current Collector Peak Current (t< lOmS) Total Power Dissipation (T c< 2 5 °C ) Junction Temperature Storage Temperature Range VCES VCEO VEBO IC ICM Ptot Tj Tstg


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PDF MH8100F MH8100F May-96
MICRO ELECTRONICS ltd transistor

Abstract: No abstract text available
Text: CRO DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage Collector Current Collector Peak Current (t< lOmS) Total Power Dissipation (Tc<25°C) Junction Temperature Storage Temperature Range VCES VCEO VEBO IC ICM Ptot Tj Tstg MH8100F NPN SILICON POWER TRANSISTOR


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PDF MH8100F MH8100F May-96 MICRO ELECTRONICS ltd transistor
Not Available

Abstract: No abstract text available
Text: CRO DESCRIPTION MH8100F is NPN silicon planar epitaxial transistor designed for the output stages of 3-5W audio amplifiers. It is also suitable for switches up to 3A collector current. ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage Collector Current Collector Peak Current (t< lOmS) Total Power Dissipation (Tc<25°C ) Junction Temperature Storage Temperature Range VCES VCEO VEBO IC ICM R ot Tj Tstg MH8100F NPN SILICON POWER TRANSISTOR


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PDF MH8100F MH8100F 300/xS,
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