| MGY20N120D |
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Motorola
|
Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
|
Original |
PDF
|
| MGY20N120D |
|
On Semiconductor
|
IGBT Chip, N Channel, 1200V, TO-264, 3-Pin |
|
Original |
PDF
|
| MGY20N120D |
|
On Semiconductor
|
Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel |
|
Original |
PDF
|
| MGY20N120D/D |
|
Motorola
|
IGBT & DIODE IN TO-264 20 A |
|
Original |
PDF
|
| MGY20N120D-D |
|
On Semiconductor
|
Insulated Gate Bipolar Transistor with Anti-Parall |
|
Original |
PDF
|
| MGY20N120DG |
|
On Semiconductor
|
IGBT Chip: N Channel: 1200V: TO-264: 3-Pin |
|
Original |
PDF
|
