MGFC36V5258 Search Results
MGFC36V5258 Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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MGFC36V5258 |
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5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET | Original | |||
MGFC36V5258 |
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5.2-5.8 GHz BAND 4W Internally Matched GaAs FET | Scan | |||
MGFC36V5258 |
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High Frequency Device Data Book (Japanese) | Scan | |||
MGFC36V5258 |
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FET Data Book | Scan |
MGFC36V5258 Price and Stock
Mitsubishi Electric MGFC36V5258015.2-5.8 GHZ BAND 4W INTERNALLY MATCHED GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MGFC36V525801 | 15 |
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Get Quote | |||||||
Mitsubishi Electric MGFC36V525851RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MGFC36V525851 | 4 |
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Get Quote |