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MGF4941AL datasheet (1)

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MGF4941AL Mitsubishi SUPER LOW NOISE InGaAs HEMT Original PDF

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mgf4941al

Abstract: nozzle heater Halide hot air gun 450 chip 1097E MGF4941
Text: Technical Note for MGF4941AL 1. Recommended foot pattern 2.80 Unit : mm Tolerance : ±0.05 , Note for MGF4941AL 2. Recommended Metal Mask pattern Metal Mask Thickness = 0.15mm Unit : mm , MGF4941AL 3. Recommended soldering methods and general notes 3-1General Notes Adding high temperature to MGF4941AL can cause deformation of the package outline or degradation of the electric , WORKS 4 Technical Note for MGF4941AL 3-2) Recommended IR reflow soldering (Lead free Solder


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PDF MGF4941AL 50-ohm 254mm) QL-1097E mgf4941al nozzle heater Halide hot air gun 450 chip 1097E MGF4941
2011 - 1 928 405 766

Abstract: GD-32 rogers 4403
Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL , COMPLIANT MGF4941AL is a RoHS compliant product. RoHS compliance is indicated by the letter "G" after the , ., 2011 1 MGF4941AL Micro-X type plastic package Fig.1 3.2±0.1 (0.30 , -32) Publication Date : Apr., 2011 2 (2.3) A MGF4941AL Micro-X type plastic , ASSOCIATED GAIN, Gs (dB) 1.0 14 MGF4941AL Micro-X type plastic package


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PDF MGF4941AL MGF4941AL 12GHz 4000pcs 1 928 405 766 GD-32 rogers 4403
2007 - GD-32

Abstract: mgf4941al fet K 727
Text: MITSUBISHI SEMICONDUTOR Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is , . MITSUBISHI (1/6) V MITSUBISHI SEMICONDUTOR Dec./2007 MGF4941AL SUPER LOW NOISE , ) MITSUBISHI SEMICONDUTOR Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL , , ID (mA) MITSUBISHI (3/6) 0.0 MITSUBISHI SEMICONDUTOR Dec./2007 MGF4941AL


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PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727
2007 - mgf4941al

Abstract: MITSUBISHI electric R22 GD-32
Text: Preliminary 19/Jan./2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is , MITSUBISHI (1/6) Preliminary 19/Jan./2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW , MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS ID , MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (VDS=2V,ID


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PDF 19/Jan MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MITSUBISHI electric R22 GD-32
2006 - MGF4941AL

Abstract: MGF4941 GD-32
Text: Preliminary 26/Dec./2006 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is , > MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS ID vs. VDS 50 V GS=-0.1V/STEP (Ta , > MGF4941AL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) Freq. (GHz , 2.08 Preliminary 26/Dec./2006 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE


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PDF 26/Dec MGF4941AL MGF4941AL 12GHz GD-32 4000pcs MGF4941 GD-32
2007 - top 261

Abstract: GD-32 mgf4941al InGaAs HEMT mitsubishi
Text: MITSUBISHI SEMICONDUTOR 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is , . MITSUBISHI (1/6) V MITSUBISHI SEMICONDUTOR 18/May/2007 MGF4941AL SUPER LOW NOISE , ) MITSUBISHI SEMICONDUTOR 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL , MGF4941AL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) Freq. (GHz


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PDF 18/May/2007 MGF4941AL MGF4941AL 12GHz GD-32 4000pcs top 261 GD-32 InGaAs HEMT mitsubishi
gaas fet marking B

Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [micro-X plastic package: MGF4941AL ] GD , Type A MGF4941AL 2008 Month Symbol Jan. s Feb. t Mar u Apr v May 1 Jun 2 Jul 3


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PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
2013 - MGF4937

Abstract: MGFG5H1503 MGF2415 BA012J1 MGF0909A MGF2430 mgfc39v5964 MGF0904 MGFG5H1502 GD-32
Text: 12GHz 0.2 26 MGF4921AM I MGF4937AM## MGF4921AM MGF4941AL I 1dB [dBm] MGF4935AM , AMPLIFIERS Type Number MGF4921AMI MGF4934CM MGF4935AM MGF4937AM## MGF4941AL MGF4964BL MGF4965BM , Stage LO Performance of LNB 1st Stage 2nd Stage Mixer Low Noise Model MGF4941AL MGF4941AL MGF4934CM Standard Model MGF4935AM MGF4934CM MGF4934CM PRODUCT LIST Lineup


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PDF H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF2415 BA012J1 MGF0909A MGF2430 mgfc39v5964 MGF0904 MGFG5H1502 GD-32
2006 - MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio QVC12 mgfc36v-a MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: PACKAGE for INDUSTRIAL USE MGF4953A MGF4941AL 0.5 MGF4934AM MGF4931AM GD-4 1.0 1.5 GD , ) (mA) Package Outline 2 - - 10.5 12 3 10 GD-16 MGF4941AL 0.35 0.50


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PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio QVC12 mgfc36v-a MGF1907A MGF4961 mgf4941al mitsubishi mgf
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