The Datasheet Archive

MGF1952A datasheet (3)

Part Manufacturer Description Type PDF
MGF1952A Mitsubishi Microwave Power MES FET (Leadless Ceramic Package) Original PDF
MGF1952A Mitsubishi Original PDF
MGF1952A-01 Mitsubishi Original PDF

MGF1952A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , COMPLIANT MGF1952A is a RoHS compliant product. RoHS compliance is indicated by the letter “G” after , > MGF1952A Leadless ceramic package Fig.1 Side Top    D 2 4 AA  Bottom , ¼š Gate 解 Source 回 Drain < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL , VOLTAGE VGS(V) 0.0 < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS (VDS


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PDF MGF1952A MGF1952A 17dBm 12GHz 000pcs/reel
2011 - ID600A

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , VDS=3V , ID=60mA ORDERING INFORMATION Tape & reel 3,000pcs/reel RoHS COMPLIANT MGF1952A is a , GaAs FET > MGF1952A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A , : mm Gate Source Drain Publication Date : Oct., 2011 2 < Power GaAs FET > MGF1952A , < Power GaAs FET > MGF1952A Leadless ceramic package S PARAMETERS Freq. (GHz) 1 2 3 4 5 6 7 8 9 10


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PDF MGF1952A MGF1952A 17dBm 12GHz 000pcs/reel ID600A
2011 - Not Available

Abstract: No abstract text available
Text: < Power GaAs FET > MGF1952A Leadless ceramic package DESCRIPTION The MGF1952A power MES FET , VDS=3V , ID=60mA ORDERING INFORMATION Tape & reel 3,000pcs/reel RoHS COMPLIANT MGF1952A is a , GaAs FET > MGF1952A Leadless ceramic package Fig.1 Top 2.15 -0.10 +0.20 Side A .0 (1 2 , Publication Date : Apr., 2011 2 < Power GaAs FET > MGF1952A Leadless ceramic package TYPICAL , (dBm ) Publication Date : Apr., 2011 3 < Power GaAs FET > MGF1952A Leadless ceramic package


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PDF MGF1952A MGF1952A 17dBm 12GHz 000pcs/reel
2004 - mitsubishi microwave

Abstract: MGF1952A
Text: June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF1952A is designed for use in S to Ku band , MGF1952A Microwave Power MES FET (Leadless Ceramic Package) Fig.1 Unit : mm Top , June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic , > MGF1952A Microwave Power MES FET (Leadless Ceramic Package) S PARAMETERS f (GHz) 1 2 3 4 5 6 7


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PDF MGF1952A MGF1952A 17dBm 12GHz 3000pcs mitsubishi microwave
2003 - MGF1952A

Abstract: No abstract text available
Text: October /2003 MITSUBISHI SEMICONDUTOR MGF1952A Microwave Power MES FET (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF1952A is designed for use in S to Ku band , > MGF1952A Microwave Power MES FET (Leadless Ceramic Package) Fig.1 Unit : mm Top Side +0.20 , /2003 October /2003 MITSUBISHI SEMICONDUTOR MGF1952A Microwave Power MES FET , MGF1952A Microwave Power MES FET (Leadless Ceramic Package) S PARAMETERS f (GHz) 1


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PDF MGF1952A MGF1952A 17dBm 12GHz 3000pcs Cha14
2002 - k MESFET S parameter

Abstract: MGF1952A-01 MGF1952A
Text: Form MGF1952A-01 3.000 pcs/reel Tape & Reel Keep Safety first in your circuit designs , MITSUBISHI SEMICONDUTOR MGF1952A PRELIMINARY Medium Power Microwave MESFET DESCRIPTION The MGF1952A is a 50mW MESFET for S- to Ku-band driver amplifiers and oscillators. Its , (1/4) 1 Aug 2002 MITSUBISHI SEMICONDUTOR MGF1952A PRELIMINARY Medium Power , > MGF1952A PRELIMINARY Medium Power Microwave MESFET TYPICAL CHARACTERISTICS (Ta=+25°C) DRAIN


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PDF MGF1952A MGF1952A 17dBm 12GHz MGF1952A-01 k MESFET S parameter MGF1952A-01
2004 - Not Available

Abstract: No abstract text available
Text: June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic Package) DESCRIPTION Outline Drawing The MGF1952A is designed for use in S to Ku band , MGF1952A Microwave Power MES FET (Leadless Ceramic Package) Fig.1 Unit : mm Top , /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave Power MES FET (Leadless Ceramic , € MITSUBISHI (3/5) June /2004 June /2004 MITSUBISHI SEMICONDUCTOR MGF1952A Microwave


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PDF MGF1952A MGF1952A 17dBm 12GHz 3000pcs
gaas fet marking B

Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A (July/2008) [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View B 0 1AL B 0 1AL Electrodes direction: Gate Source Drain Drain Gate Source Type Letter Type A MGF4951A/52A B MGF4953A/54A C MGF1951A D MGF1952A E MGF1953A F MGF1954A G MGF4851A `1' means April J MGF4953B `AL' means lot number in month. 'AA, AB


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PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
2006 - MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio QVC12 mgfc36v-a MGF1907A MGF4961 mgf4941al mitsubishi mgf
Text: MGF2407A MGF1954A 22 MGF1953A 18 MGF1952A GD-27 MGF4851A MGF1951A 14 10 Application , - 7 - - - 12 3 0.03 - - GD-27 MGF1952A 15 17 - 5 -


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PDF H-CR587-J KI-0612 MGFS45H2201G MGFS40H2201G MGF0909A sirio QVC12 mgfc36v-a MGF1907A MGF4961 mgf4941al mitsubishi mgf
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