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MDO500-14N1 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
MDO500-14N1 MDO500-14N1 ECAD Model IXYS 1400V high power diode module Original PDF

MDO500-14N1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - Not Available

Abstract: No abstract text available
Text: MDO500-14N1 VRRM = 1400 V I FAV = 560 A VF Standard Rectifier Module = 0.98 V Single Diode Part number MDO500-14N1 Backside: isolated 2 3 Features , otherwise specified 20140204a MDO500-14N1 Ratings Rectifier Conditions Symbol VRSM , to IEC 60747and per semiconductor unless otherwise specified pF 20140204a MDO500-14N1 , Circuit Diagram PART NUMBER ywwH Date Code Prod. Index Ordering Standard Part Number MDO500-14N1


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PDF MDO500-14N1 60747and 20140204a
2014 - Not Available

Abstract: No abstract text available
Text: -12N1 Similar Part MDO500-14N1 MDO500-16N1 MDO500-18N1 MDO500-20N1 MDO500-22N1 Equivalent Circuits for


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PDF MDO500-12N1 60747and 20140204a
2014 - Not Available

Abstract: No abstract text available
Text: Number MDO500-22N1 Similar Part MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500-18N1 MDO500


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PDF MDO500-22N1 60747and 20140204a
2014 - Not Available

Abstract: No abstract text available
Text: -18N1 Similar Part MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500-20N1 MDO500-22N1 Equivalent Circuits for


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PDF MDO500-18N1 60747and 20140204a
2014 - Not Available

Abstract: No abstract text available
Text: -16N1 Similar Part MDO500-12N1 MDO500-14N1 MDO500-18N1 MDO500-20N1 MDO500-22N1 Equivalent Circuits for


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PDF MDO500-16N1 60747and 20140204a
2014 - Not Available

Abstract: No abstract text available
Text: Number MDO500-20N1 Similar Part MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500-18N1 MDO500


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PDF MDO500-20N1 60747and 20140204a
MDD72-18N1B

Abstract: MD0500 14N1B MDD44-16N1B MDD 500-14N1 mdd26-16 16N1B mdd56-08n1b MDD250
Text: -08N1 MDD142-12N1 MDD142- 14N1 MDD142-16N1 MDD142-18N1 MDD172-08N1 MDD172-12N1 MDD172- 14N1 MDD172-16N1 MDD172-18N1 MDD220-08N1 MDD220-12N1 MDD 220-14N1 MDD 220-16N1 MDD250-08N1 MDD250-12N1 MDD250- 14N1 MDD250-16N1 MDD 255- 12N1 MDD255 14N1 MDD 255 16N1 MDD 255 18N1 MDD 255 20N1 MDD 255 22N1 MDD310-08N1 MDD 310-12N1 MDD310- 14N1 MDD310-16N1 MDD310-16N1 MDD310-20N1 MDD310-22N1 MDD 312- 12N1 MDD312- 14N1 MDD 312- 16N1 MDD 312- 18N1


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PDF 72-08N1B 72-14N1B 72-16N1B MDD26-08N1B MDD26-12N1B MDD26-14N1B MDD26-16N1B MDD26-18N1B MDD44-08N1B MDD44-12N1B MDD72-18N1B MD0500 14N1B MDD44-16N1B MDD 500-14N1 mdd26-16 16N1B mdd56-08n1b MDD250
Not Available

Abstract: No abstract text available
Text: MDD142- 14N1 Diodes Silicon Center-Tapped Doubler I(O) Max.(A) Output Current165 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.0k¥ V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25õ I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) I(RM) Max.(A) Pk. Rev. Current20m @Temp. (øC) (Test Condition)125õ Maximum Operating Temp (øC)150õ Package StyleM:HL080HD6.6 Mounting StyleT


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PDF MDD142-14N1 Current165 Current20m HL080HD6
Not Available

Abstract: No abstract text available
Text: MDD172- 14N1 Diodes Silicon Center-Tapped Doubler I(O) Max.(A) Output Current190 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.6.3k¥ V(FM) Max.(V) Forward Voltage1.15 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25õ I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) I(RM) Max.(A) Pk. Rev. Current20m @Temp. (øC) (Test Condition)125õ Maximum Operating Temp (øC)150õ Package StyleM:HL080HD6.6 Mounting StyleT


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PDF MDD172-14N1 Current190 Current20m HL080HD6
Not Available

Abstract: No abstract text available
Text: MDD72- 14N1 Diodes Silicon Center-Tapped Doubler I(O) Max.(A) Output Current99 @Temp (øC) (Test Condition)100 V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1950 V(FM) Max.(V) Forward Voltage1.6 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25 I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition) I(RM) Max.(A) Pk. Rev. Current44 @Temp. (øC) (Test Condition)150 Maximum Operating Temp (øC)150õ Package StyleTO-240AA Mounting StyleT Description American


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PDF MDD72-14N1 Current99 Current44 StyleTO-240AA
mm036

Abstract: MM036-12 ml075-12 mm075-12io1 mm036-16 DSI 12-06A mm062 MDD95-16N1B ME03 21N100
Text: -16N1 MDD172-18N1 MDD220-06N1 MDD220-08N1 MDD220-12N1 MDD220- 14N1 MDD220-16N1 MDD250-06N1 MDD250-08N1 MDD250-12N1 MDD250- 14N1 MDD250-16N1 MDD26-08N1B MDD26-12N1B MDD26-16N1B MDD26-18N1B MDD310-06N1 MDD310-08N1 MDD310-12N1 MDD310- 14N1 MDD310-16N1 MDD44-08N1B MDD44-12N1B MDD44-16N1B MDD44-18N1B MDD56-08N1B MDD56-12N1B MDD56


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PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 MM036-12 ml075-12 mm075-12io1 mm036-16 DSI 12-06A mm062 MDD95-16N1B ME03 21N100
Not Available

Abstract: No abstract text available
Text: MDD42- 14N1 Diodes Silicon Rectifier Military/High-RelN I(O) Max.(A) Output Current64 @Temp (øC) (Test Condition)94# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.1k V(FM) Max.(V) Forward Voltage1.7 @I(FM) (A) (Test Condition)200 @Temp. (øC) (Test Condition)25 I(RM) Max.(A) Reverse Current @V(R) (V)(Test Condition)1.4k I(RM) Max.(A) Pk. Rev. Current5.0m @Temp. (øC) (Test Condition)150 Maximum Operating Temp (øC)150õ Package StyleN/A Mounting Style- Description


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PDF MDD42-14N1 Current64
MDD172-16N1

Abstract: M235A E72873 MDD172 MDD172-06N1 MDD172-08N1 MDD172-12N1 MDD172-18N1 ITT DIODE 129
Text: MbûbEEb 0001715 7bS «IXY nixYS Diode Modules MDD172 itav = 2 x 190 a vrrm = 600-1800 v VmH Type V V Version 1 700 600 MDD172-06N1 900 800 MDD172-08N1 1300 1200 MDD172-12N1 1500 1400 MD0172- 14N1 1700 1600 MDD172-16N1 1900 1800- MDD172-18N1 'on request Symbol Test conditions Maximum Ratings TVJ=TV^, 300 A Tc=100°C; (180°sin) 190 A TVj=45°C t = 10 ms (50Hz) 5900 A v,=o t = 8.3 ms (60Hz) 6300 A TVJ=TV„ t= 10ms(50Hz) 5200 A V»=0 t = 8.3 ms


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PDF MDD172 MDD172-06N1 MDD172-08N1 MDD172-12N1 MD0172-14N1 MDD172-16N1 MDD172-18N1 MDD172-16N1 M235A E72873 MDD172-06N1 MDD172-08N1 MDD172-12N1 MDD172-18N1 ITT DIODE 129
40n80

Abstract: 13NB0 dsei 20-12 60N60 33N120 VUO 35-12 N 0 7 DS117-12A DS1110-12 DS117-12 12n60u
Text: -12N1 MDD142- 14N1 MDD142-16N1 MDD142-18N1 MDD172-08N1 MDD172-12N1 MDD172- 14N1 MDD172-16N1 MDD172-18N1 MDD


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PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 dsei 20-12 60N60 33N120 VUO 35-12 N 0 7 DS117-12A DS1110-12 DS117-12 12n60u
E72873

Abstract: MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1 MDD56-16N1
Text: nixYS 4bE » ■MbfibSSb GGQ122S T «IXY T X Y S CORP Diode Modules MDD56 iTAV = 2 x 71 A VRRM = 400-1600 V Vrsm Vrrm Type V V Version 1 500 400 MDD56-04N1 700 600 MDD56-06N1 900 800 MDD56-08N1 1300 1200 MDD56-12N1 1500 1400 MDD56- 14N1 1700 1600 MDD56-16N1 Symbol Test conditions Maximum Ratings irans Tvj-Tvjm 150 A ifavm Tc=100°C, (180°sin) 71 A Ifsm TVJ=45°C t = 10 ms (50Hz) 1400 A vR=o t = 8.3 ms (60Hz) 1650 A tvj=twm t = 10 ms (50Hz) 1200 A v„=0 t = 8.3


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PDF GGQ122S MDD56 MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1 MDD56-16N1 E72873 MDD56-04N1 MDD56-06N1 MDD56-08N1 MDD56-12N1 MDD56-14N1 MDD56-16N1
IXYS DIODE

Abstract: mdd142 E72873 MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1
Text: 4bflbSSb G001712 TB3 HIXY □IXYS Diode Modules MDD142 Itav = 2 X 165 A VRRM = 600-1800 V vRU VfinM Type V V Version 1 700 600 MDD142-06N1 900 600 MDD142-08N1 1300 1200 MDD142-12N1 1500 1400 MDD142- 14N1 1700 1600 MDD142-16N1 1900 1800- MDD142-1BN1 Symbol Test conditions Maximum Ratings IFIIU T»j=T,ju 300 A u« Tc=100°C; (180°sin) 165 A IpSM T„=45°C t = 10 ms (50Hz) 4700 A V„=0 t = 8.3 ms (60Hz) 5000 A T»j=T„ju t = 10 ms (50Hz) 4100 A V,=0 t = 8.3 ms (60Hz


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PDF G001712 MDD142 MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1 MDD142-1BN1 IXYS DIODE E72873 MDD142-06N1 MDD142-08N1 MDD142-12N1 MDD142-14N1 MDD142-16N1
CHN 747

Abstract: oms 450 CHN 450 DIODE RK 306 rectifier bridge VU MDD220-14N1 MDD220-12N1 MDD220-08N1 MDD220-06N1 E72873
Text: 4bflb52b 000171a 471 MIIXY niXYS Diode Modules Symbol MDD220 lTAV = 2 x 270 A VRRM = 600-1600 V Vu«« VnnM Type V V Version 1 TOO 600 MDD220-06N1 900 800 MDD220-08N1 1300 1200 MDD220-12N1 1500 1400 MDD220- 14N1 1700 1600 MD0220-16N1 Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass Test conditions Maximum Ratings IfRMS T.J-T.ju 450 A I,.« Tc=100°C; (1B0°sin) 270 A Ifbm TVJ=45°C t = 10 ms (50Hz) 8500 A V„=0 t - 8.3 ms (60Hz) 9000 A T»j-T»jâ


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PDF 4bflb52b 000171a MDD220 MDD220-06N1 MDD220-08N1 MDD220-12N1 MDD220-14N1 MD0220-16N1 MDD220 CHN 747 oms 450 CHN 450 DIODE RK 306 rectifier bridge VU MDD220-14N1 MDD220-12N1 MDD220-08N1 MDD220-06N1 E72873
E72873

Abstract: MDD310 MDD310-06N1 MDD310-08N1 MDD310-12N1 MDD310-14N1 MDD310-16N1 RW45
Text: 4bflb22b 0001724 775 «IXY nixYS Diode Modules MDD310 Itav = 2 x 305 A VRRM = 600-1600 V V™, V„„„ Type V V Version 1 700 600 MDD310-06N1 900 BOO MDD310-08N1 1300 1200 MDD310-12N1 1500 1400 MDD310- 14N1 1700 1600 MDD310-16N1 Symbol Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass Test conditions Maximum Ratings Ifrms Tvj=Tvjm 480 A ■FUM Tc=100°C; (180°sin) 305 A T,j.45°C t = 10 ms (50Hz) 11500 A V,-0 t - 8.3 ms (60Hz) 12200 A Tw=TVjm t = 10


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PDF 4bflb22b MDD310 MDD310-06N1 MDD310-08N1 MDD310-12N1 MDD310-14N1 MDD310-16N1 E72873 MDD310-06N1 MDD310-08N1 MDD310-12N1 MDD310-14N1 MDD310-16N1 RW45
mdd 42

Abstract: diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 10MSA MDD72 MDD72-08N1B
Text: - 14N1 MD0500- 16N1 MDO 500- 18N1 M D0 500- 20N1 MD0500- 22N1 305 100 480 11500 0.75


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PDF O-240 MDD26-08N1B MDD26-12N1B MDD26-14N1B 26-16N1B MDD26-18N1B MDD44-08N1B 44-12N1B 44-14N1B MDD44-16N1B mdd 42 diode mdd 42 MD0500 MDD142-08N1 172-14N1 MDD72-12N1B MDD5 10MSA MDD72 MDD72-08N1B
14n391k

Abstract: varistor 10N391K 14n431k VARISTOR 14S431K 10n431k 14N271K 10N471K JVR-14N391K 10S471K 10N391K
Text: -14N271K JVR-14N221K 12K JVR-14N102K - 14N1 JVR 12K N1 JV N561K JVR-14 471K R-14N JV N391K


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PDF JVR-10N821K JVR-10N781K JVR-10N751K JVR-10N561K JVR-10N391K JVR-10N911K JVR-10N681K 14n391k varistor 10N391K 14n431k VARISTOR 14S431K 10n431k 14N271K 10N471K JVR-14N391K 10S471K 10N391K
thyristor TAG 103 X

Abstract: No abstract text available
Text: ■4bfib22t. 000170^ MbT « I X Y CIIXYS MDD95 iT V = 2 x 120 a A Diode Modules =400-1800V V rSm V rrm V V T yp » Version 1 8 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MDD95-04N1 MDD95-06N1 MDD95-08N1 MOD95-12N1 MDD95- 14N1 MDD95-16N1 MDD95-18N1 B B B B B B B •on r*qu«si Symbol Maximum Ratings Test conditions If m m IfAVM T vj =T vjm 180 120 Tc =1Q5°C;(180*sin) v b=o 2800 3300 A A t =


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PDF 4bfib22t. MDD95 00-1800V MDD95-04N1 MDD95-06N1 MDD95-08N1 MOD95-12N1 MDD95-14N1 MDD95-16N1 MDD95-18N1 thyristor TAG 103 X
MDD2606

Abstract: CC2500
Text: ■MbfibEEb ODGlbT? 11? * I X Y PIXYS MDD26 Diode Modules iT V = 2 x 36 A A Vn = 400-1800 V nM i > > 500 700 eoo 1300 1S00 1700 1900 VfWM V Type Version 1 B 400 600 800 1200 1400 1600 1800* MDD26-04N1 MDD26-06N1 MDD26-08N1 MDD26-12N1 MOD26- 14N1 MDD26-16N1 MDD26-18N1 B B B B B B B •on raquait Symbol Test conditions IpR S U T vj =T vjm Ifavm Tc=100°C; (180°sin) If m TVJ=45CC V R=0 Maximum Ratings 650 760 A A 1 =


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PDF MDD26 MDD26-04N1 MDD26-06N1 MDD26-08N1 MDD26-12N1 MOD26-14N1 MDD26-16N1 MDD26-18N1 MDD2606 CC2500
ztuc

Abstract: MDD26 MDD26-04N1 inverter SM 1600 output 48 V MDD26-16N1 MDD26-14N1 MDD26-12N1 MDD26-08N1 MDD26-06N1 E72873
Text: EilXYS 4bE D ■MbfibESb DDDlElb H HIXY I X Y S CORP _ Diode Modules MDD26 itav = 2 x 36 a "TAV 1 vrrm = 400-1600 v VBSU Vhrm Type V V Version 1 500 400 MDD26-04N1 700 600 MDD26-06N1 900 BOO MDD26-08N1 1300 1200 MDD26-12N1 1500 1400 MDD26- 14N1 1700 1600 MDD26-16N1 Symbol Test conditions Maximum Ratings Tvj=TVJM 60 A Uavm Tc=100°C; (180°sm) 36 A TVj=45°C t = 10ms(50Hz) 650 A V„=0 t = 8.3 ms (60Hz) 760 A TVj=Twm t = 10 ms (50Hz) 580 A VR=0 t = 8.3 ms (60Hz) 630 A


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PDF MDD26 MDD26-04N1 MDD26-06N1 MDD26-08N1 MDD26-12N1 MDD26-14N1 MDD26-16N1 ztuc MDD26-04N1 inverter SM 1600 output 48 V MDD26-16N1 MDD26-14N1 MDD26-12N1 MDD26-08N1 MDD26-06N1 E72873
MDD44-12N1

Abstract: 12nl E72873 MDD44 MDD44-04N1 MDD44-06N1 MDD44-08N1 MDD44-14N1 MDD44-16N1
Text: 4bE D ■4bflb2Sb GGD12n T HIXY I X V S CORP EilXYS TOvzi Diode Modules MDD44 It&v = 2 x 59 A ■tav ■VRRM = 400-1600 V vn„„ Type V V Version 1 500 400 MDD44-04N1 700 600 MDD44-06N1 900 800 MDD44-08N1 1300 1200 MDD44-12N1 1500 1400 MDD44- 14N1 1700 1600 MDD44-16N1 Symbol Test conditions Maximum Ratings lphms Tvj-Tvjm 100 A 'favm Tc=100°C; (180°sin) 59 A Ifsm TVJ=45°C t = 10ms(50Hz) 1150 A v„=o t = 8.3 ms (60Hz) 1300 A tvj=tvjm t = 10 ms (50Hz) 1000 A


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PDF GGD12n MDD44 MDD44-04N1 MDD44-06N1 MDD44-08N1 MDD44-12N1 MDD44-14N1 MDD44-16N1 MDD44-12N1 12nl E72873 MDD44-04N1 MDD44-06N1 MDD44-08N1 MDD44-14N1 MDD44-16N1
Ai203-ceramic

Abstract: oms 450 MDD250-12N1 ai203ceramic E72873 LF400A
Text: ■4bôb25b 0001721 Tbb «IXY IIXYS Diode Modules MDD250 iTAV v, 2 x 290 A RRM = 600-1600 V V«. Vmhi Typ« V V Version 1 700 600 MDD260-06N1 900 800 MDD2S0-0SN1 1300 1200 MDD250-12N1 1500 1400 MDD2S0- 14N1 1700 1600 MDD2S0-16N1 Threaded spacer for higher Anode/ Cathode construction: Type ZY 260, material brass •-12-»] Symbol Test conditions Maximum Ratings lo. TIJ=T,JU 450 A IfAWH Tc=100°C; (180°sin) 290 A lp*M TVj=45nC t = 10 ms(50Hz) 11000 A V„=0 t = 8.3 ms <60Hz


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PDF MDD250 MDD260-06N1 MDD250-12N1 MDD2S0-14N1 MDD2S0-16N1 Ai203-ceramic oms 450 MDD250-12N1 ai203ceramic E72873 LF400A
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