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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MCT210 Isocom Components Newark element14 2,158 $0.46 $0.10
MCT210 Fairchild Semiconductor Corporation Bristol Electronics 25 - -
MCT210 Isocom Components NAC 55 $0.17 $0.17
MCT210 Isocom Components element14 Asia-Pacific 2,106 $0.38 $0.20
MCT210 Isocom Components Farnell element14 2,351 £0.41 £0.19
MCT2103S Fairchild Semiconductor Corporation Rochester Electronics 980 $0.20 $0.16
MCT210N TE Connectivity Ltd Master Electronics 48 $16.95 $15.90
MCT210N50 TE Connectivity Ltd Master Electronics 15 - -
MCT210SD Fairchild Semiconductor Corporation Rochester Electronics 7,750 $0.43 $0.35

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MCT210 datasheet (45)

Part Manufacturer Description Type PDF
MCT210 Fairchild Semiconductor Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6DIP Original PDF
MCT210 Fairchild Semiconductor Phototransistor Optocoupler Original PDF
MCT210 Fairchild Semiconductor PHOTOTRANSISTOR OPTOCOUPLERS Original PDF
MCT210 Isocom Components 6V, 60mA optically coupled isolator phototransistor output Original PDF
MCT210 Opto 6 Pin, DIP, Phototransistor Detector w/ Base, CTR 50 min @ 3.2-30mA, 0.4V Optocoupler Original PDF
MCT210 General Electric Photon coupled isolator. GaAs infrared emitting diode & NPN silicon photo-transistor. Scan PDF
MCT210 General Instrument 3 V, 60 mA phototransistor optocoupler Scan PDF
MCT210 Monsanto Solid State Optoelectronics Data Book 1977 Scan PDF
MCT210 Others Interface IC/Device Data Book (Japanese) Scan PDF
MCT210 QT Optoelectronics PHOTOTRANSISTOR OPTOCOUPLER Scan PDF
MCT2100 Motorola ATSC 8-VSB Demodulator / Forward Error Correction for Digital Terrestrial Television Original PDF
MCT2100AI Motorola MCT2100 ATSC 8-VSB Demodulator - Forward Error Correction for Digital Terrestrial Television Original PDF
MCT2100DCRPT Motorola Preliminary Field Test Report on the MCT2100 Evaluation System - Washington, DC Original PDF
MCT2100LABRPT Motorola Laboratory Test Report on the MCT2100 Evaluation System Original PDF
MCT2100PARPT Motorola Preliminary Field Test Report on the MCT2100 Evaluation System - Philadelphia, PA Original PDF
MCT2100SFRPT Motorola Preliminary Field Test Report on the MCT2100 Evaluation System - San Francisco, CA Original PDF
MCT210300 Fairchild Semiconductor Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6DIP Original PDF
MCT210.300 Fairchild Semiconductor IC OPTOCOUPL DC-IN 1-CH TRANS W/BASE DC-OUT 6DIP BULK Original PDF
MCT210300 Fairchild Semiconductor 6-Pin DIP Phototransistor Output Optocoupler Original PDF
MCT210300W Fairchild Semiconductor Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV TRANS W/BASE 6DIP Original PDF

MCT210 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - Optocoupler IC MCT2E

Abstract: MCT210 MCT2 MCT2202
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 WHITE , MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL , MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ELECTRICAL CHARACTERISTICS (TA = 25 , MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 BVCEO ALL MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) E90700, P01101067 MCT2201 MCT2201300 Optocoupler IC MCT2E MCT2 MCT2202
2003 - MCT2E application

Abstract: MCT2E characteristics MCT2E-M MCT2E equivalent datasheet ic mct2e MCT2 MCT2 surface mount ic MCT2e MCT2E based circuits MCT2E datasheet
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 , Page 1 of 15 10/20/04 PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 , MCT2201 MCT210 MCT2202 MCT271 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified , Unit VF MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 1.25 1.50 V MCT210 , Breakdown Voltage (IC = 1.0 mA, IF = 0) (TA = 0-70°C) (IC = 10 µA, IF = 0) MCT210 BVCEO 30


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) MCT2E application MCT2E characteristics MCT2E-M MCT2E equivalent datasheet ic mct2e MCT2 MCT2 surface mount ic MCT2e MCT2E based circuits MCT2E datasheet
2005 - MCT2E application

Abstract: mct2e ic MCT2e datasheet ic mct2e MCT210 MCT2E equivalent MCT2202 mct2 if MCT2 MCT2E-M
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 , Page 1 of 15 6/15/05 PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 , MCT2201 MCT210 MCT2202 MCT271 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified , Unit VF MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 1.25 1.50 V MCT210 , Breakdown Voltage (IC = 1.0 mA, IF = 0) (TA = 0-70°C) (IC = 10 µA, IF = 0) MCT210 BVCEO 30


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) MCT2E application mct2e ic MCT2e datasheet ic mct2e MCT210 MCT2E equivalent MCT2202 mct2 if MCT2 MCT2E-M
2001 - MCT2

Abstract: 14 pin ic DIP PACKAGE MCT2W MCT2EM MCT2E application
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 WHITE PACKAGE (-M , OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL , MCT210 MCT2202 MCT271 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified , MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 ALL MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) P01101866 E90700, MCT2 14 pin ic DIP PACKAGE MCT2W MCT2EM MCT2E application
2001 - mct2

Abstract: MCT210 MCT210 "cross reference" MCT2W MCT2EM MCT2202
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 WHITE PACKAGE (-M , OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL , MCT210 MCT2202 MCT271 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified , MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 ALL MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) AN-3001: AN-3001 P01101067 E90700, mct2 MCT210 "cross reference" MCT2W MCT2EM
2005 - MCT2E application

Abstract: MCT2EM IC 1 MCT2E MCT2E optocoupler ic mct2e MCT2
Text: MCT210 MCT210300 MCT210300W MCT2103S MCT2103SD MCT210S MCT210SD MCT210W Product status Lifetime Buy , MCT210300 MCT210300W MCT2103S MCT2103SD MCT210S MCT210SD MCT210W back to top © 2007 Fairchild Semiconductor , PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 WHITE , MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL , MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ELECTRICAL CHARACTERISTICS (TA = 25


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) P01101067 MCT210300 MCT210300W MCT2E application MCT2EM IC 1 MCT2E MCT2E optocoupler ic mct2e MCT2
MCT210

Abstract: diode sy 400 8
Text: CTR with transistor o utput MCT210- 150% min. Specified CTR over tem perature range G ood logic load , [ ì l i OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLER MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared em itting diode. The MCT210 has a specified m inim um CTR of 50%, saturated, and 150 , . UNITS TEST CONDITIONS Current transfer ratio, collector to emitter MCT210 (a) ^ C E ^F 50 150 70


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PDF MCT210 MCT210 MCT210-- E90700) C12S0 diode sy 400 8
2005 - MCT2

Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 WHITE , MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL , MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ELECTRICAL CHARACTERISTICS (TA = 25 , MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 BVCEO ALL MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) MCT2
2005 - MCT2202SD

Abstract: MCT2E MCT2 MCT2202
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 WHITE , MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL , MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 ELECTRICAL CHARACTERISTICS (TA = 25 , MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 BVCEO ALL MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) E90700, P01101067 MCT2202 MCT2202300W MCT2202SD MCT2E MCT2
2003 - MCT2E application

Abstract: MCT2E applications ic MCT2e MCT2E-M mct2e 8 pin MCT2E datasheet ic mct2e MCT2E equivalent IC 1 MCT2E MCT2E characteristics
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 , Page 1 of 14 10/10/03 PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 , MCT2201 MCT210 MCT2202 MCT271 ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified , Unit VF MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 1.25 1.50 V MCT210 , Breakdown Voltage (IC = 1.0 mA, IF = 0) (TA = 0-70°C) (IC = 10 µA, IF = 0) MCT210 BVCEO 30


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) MCT2E application MCT2E applications ic MCT2e MCT2E-M mct2e 8 pin MCT2E datasheet ic mct2e MCT2E equivalent IC 1 MCT2E MCT2E characteristics
c1252

Abstract: MCT8 opto MCL601 MCT8 opto switch 4N36 4N35 4N28 4N27 4N26 MCS6201
Text: MCT210 FEATURES • TTL compatible 1-10 gate loads • High CTR with transistor output MCT210—150% , TRANSISTOR MCT2E A 6 LEAD PLASTIC DIP 20% 2500 V 30 V 150 kHz TRANSISTOR MCT210 A 6 LEAD PLASTIC DIP 150 , The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide diode emitter. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated. This , transfer ratio, Ice/If collector to emitter MCT210 50 70 % VCE = 0.4 V, lF = 3.2 mA u o


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PDF MCT210 MCT26 MCT66 C1255 10TT1. c1252 MCT8 opto MCL601 MCT8 opto switch 4N36 4N35 4N28 4N27 4N26 MCS6201
2001 - IC 1 MCT2E

Abstract: ic MCT2e MCT2E application MCT271 DS300234 MCT2E applications MCT2E characteristics MCT210 MCT2201 MCT2202
Text: PHOTOTRANSISTOR OPTOCOUPLERS MCT2 MCT2200 MCT2E MCT2201 MCT210 MCT2202 MCT271 BLACK , MCT2201 MCT210 MCT2202 MCT271 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage , MCT2 MCT2200 MCT2E MCT2201 ELECTRICAL CHARACTERISTICS MCT210 MCT2202 MCT271 (TA = 25 , /-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 ALL MCT210 MCT2/-M MCT2E/-M MCT271 MCT2200 MCT2201 MCT2202 MCT210 MCT2/-M MCT2E/-M


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PDF MCT2200 MCT2201 MCT210 MCT2202 MCT271 E90700) DS300234 IC 1 MCT2E ic MCT2e MCT2E application MCT271 DS300234 MCT2E applications MCT2E characteristics MCT210 MCT2201 MCT2202
C 1153

Abstract: No abstract text available
Text: MCT210-150% min. Specified CTR over temperature range Good logic load characteristics VO l= 0.4 V @ 1.6 , QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT210 PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated. ' -* T , Current transfer ratio, collector to emitter MCT210 (a) 70 225 % % % Voe=0.4 V, If = 3 .2 mA to


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PDF MCT210 MCT210 MCT210--150% C2090 C12S4 C 1153
c1252

Abstract: C1246 C1255 C1254 C1241 C1253 C2090 c1251 C2079 MAZ3000
Text: diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated. FEATURES ■TTL compatible 1-10 gate loads ■High CTR with transistor output MCT210—150% min. ■Specified , 0-70°C MCT210 PACKAGE DIMENSIONS &38 (.330) 7.62 t.78 (.070) bef t^ (.300) ref 2.54(.100 , (INCHES) anode[T cath.H IM |base jj]c0l 4]emu. C2079 Equivalent Circuit DESCRIPTION The MCT210 , °C .2.67 mW/°C 1i MCT210 DeT| BflTDlEfl ODDa^bb 3890128 GENU INSTR, OPTOELEK 88D 02966 DT-V/-#3


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PDF MCT210 C2090 C2079 MCT210 MCT210â C1255 C1254 10TTLLOADS c1252 C1246 C1255 C1254 C1241 C1253 C2090 c1251 C2079 MAZ3000
2004 - MCT210

Abstract: E244343 OPTO611
Text: Global Supplier of Optoelectronic Solutions MCT210 ALL Product Lead Free, RoHs Compliant , : 972-886-0078 Email: sales@optoinc.com Global Supplier of Optoelectronic Solutions MCT210 ALL Product , Optoelectronic Solutions MCT210 ALL Product Lead Free, RoHs Compliant UL # E244343 Fig.6 Collector , Compliant MCT210 UL # E244343 G ©COPYRIGHT 2004 OPTO INC. www.optoinc.com Telephone: 972-886-0018 , Product Lead Free, RoHs Compliant MCT210 UL # E244343 ©COPYRIGHT 2004 OPTO INC. www.optoinc.com


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PDF MCT210 E244343 2-32mA 5300Vrms, 7500Vpk) OPTO611 MCT210 E244343 OPTO611
transistor KJJ

Abstract: C-1248 ic aobe C1256 CI242 Phototransistor with base emitter MCT210 C2079 C1250 C1248
Text: MCT210—150% min. Specified CTR over temperature range Good logic load characteristics Vol=0.4 V @ 1.6 mA , OPTOELECTHBKiCS PHOTOTRANSISTOR OPTOCOUPLER MCT210 'V- , PACKAGE DIMENSIONS DESCRIPTION ft & & MAX WWW\ 8.89 8.38 The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and , transfer ratio, collector to emitter MCT210 (a) 50 70 - % VCE=0.4 V, lF=3.2 mA to 32 mA 150 225 % VCS


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PDF MCT210 MCT210 MCT210â E90700) C1256 transistor KJJ C-1248 ic aobe C1256 CI242 Phototransistor with base emitter C2079 C1250 C1248
Not Available

Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER OPT OELECTRONI CS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated. FEATURES WWW 8.89 8.38 TTL compatible 1-10 gate loads High CTR with transistor output MCT210— , emitter MCT210 (a) 225 % Vce= 5.0 V, lF=10 mA 0.6 % VC =5.0 V, lF B =10 mA V lc


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PDF MCT210 MCT210 MCT210â E90700) 74bbfl51 000bl23 D00L124
c1247

Abstract: C1246 c1252 MCT210 Phototransistor with base emitter CI242
Text: High CTR with transistor output MCT210-Specified CTR over temperature range Good logic load , OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS MCT210 PACKAGE DIMENSIONS ìleSlìl WWW 8.89 , {base 5|c0l 4{eMIT. c2079 Equivalent Circuit DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a , , collector to emitter MCT210 (a) Ice/If 50 70 % Vce=0.4 V, If=3.2 mA to 32 mA 150 225 % Voe=5.0 V, lF


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PDF MCT210 ST1603A c2079 MCT210 MCT210-Specified E90700) 10TTI c1247 C1246 c1252 Phototransistor with base emitter CI242
PS2001

Abstract: 4N25 CROSS 4N33 "cross reference" TLP520 siemens CNY17-2 QTC 4N25 LTV702VA siemens CNY17-4 PS2401-4 QTC 4N35
Text: CROSS REFERENCE GUIDE MOTOROLA QTC LITON SHARP PART NO. PART NO, PART NO. PART NO. LTV4N25 LTV4N26 LTV4N27 LTV4N28 LTV4N32 LTV4N33 LTV4N35 LTV4N37 LTV702V PC4N25 PC4N26 PC4N27 PC4N28 PC4N32 PC4N33 PC4N35 PC4N37 PC702V 4N25 4N26 4N27 4N28 4N32 4N33 4N35 4N37 CNX36 CNY17-1 CNY17-2 CNY17-3 CNY17-4 MCT2022 MCT275 MCT210 H11A1 MCT270 - TELEFUNKEN PRAT NO. 4N25 4N26 4N27 4N28 4N32 4N33 4N3S 4N37 - 4N25 4N26 4N27 4N28 4N32 4N33 4N35 4N37 H11A2 H11A3 CNY17-1 CNY17-2 CNY17-3 CNY17-4 H11A5 MCT2022 MCT275


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PDF LTV4N25 LTV4N26 LTV4N27 LTV4N28 LTV4N32 LTV4N33 LTV4N35 LTV4N37 LTV702V PC4N25 PS2001 4N25 CROSS 4N33 "cross reference" TLP520 siemens CNY17-2 QTC 4N25 LTV702VA siemens CNY17-4 PS2401-4 QTC 4N35
2008 - MCT210

Abstract: E91231
Text: MCT210 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 2.54 APPROVALS UL recognised, File No. E91231 Package Code " GG " 1 2 6 5 3 7.0 6.0 4 1.2 DESCRIPTION 7.62 6.62 The MCT210 optically coupled isolator consists of an infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. 7.62 4.0 13° Max 0.5 3.0 FEATURES 0.5 Options :10mm lead spread - add G after part no. Surface


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PDF MCT210 E91231 MCT210 32mAIF 5x1010 DB91089 E91231
CNY17G-3

Abstract: No abstract text available
Text: [sii OPTOELECTRONICS (3 u t p u t i G a A s OPTOCOUPLERS CTR Part Number CNY17-1.300 CNY17-2 C N Y17-2.300 CNY17-3 C N Y17-3.300 CNY17-4 C N Y17-4.300 CNY17G-1 CNY17G-1.300 CNY17G-2 CNY17G-2.300 CNY17G-3 CNY17G-3.300 CNY17G-4 CNY17G-4.300 H11A1 H11A1.300 H11A2 H11A2.300 H11A3 H11A3.300 H11A4 H11A4.300 H11A5 H11A5.300 MCT2 MCT2.300 MCT210 MCT210.300 MCT2200 MCT2200.300 MCT2201 MCT2201.300 MCT2202 MCT2202.300 MCT270 MCT271 M CT2E MCT2E.300 SL5500 @ BV ceo BV cbo V c E (sat) *OI*/*OFF 10 mA


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PDF CNY17-1 CNY17-2 Y17-2 CNY17-3 Y17-3 CNY17-4 Y17-4 CNY17G-1 CNY17G-2 CNY17G-3
Not Available

Abstract: No abstract text available
Text: P S E SOLID STATE 01 DE | 3 ñ 7 S 0 ñ l _ 0 D n f l 7 t i 2 Optoelectronic Specifications. T -m-Z3 Photon Coupled Isolator M CT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-lVansistor The GE Solid State MCT210 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a dual-in-line package. This device is also available in Surface-Mount packaging. TOC overed , STATE MCT210 01 D E | 3 ñ 7 S 0 ñ l DDITÖ? 4 Optoelectronic Specifications


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PDF CT210 MCT210 MCT210
MOC5010

Abstract: MOC7811 TIL31A TIL903-1 TIL34A OP8815 SCS11C3 h2181 TIL143 opb814
Text: MCS2 MCS21 MCS2400 MCS2401 MCT2 MCT2E MCT8 MCT26 MCT81 MCT210 MCT2200 MCT2201 MCT2202 MCT270 MCT271 , PART NUMBER GE3020 GE3021 GE3022 MCS2 MCS21 MCS2400 MCS2401 MCT2 MCT2E H21A1 MCT26 H21A1 MCT210 H11A520 , H21A1 H21A1 H21B1 H22A1 H21A1 H21A1 H21A2 H21A2 H21A1 H21A2 MCT210 H11A4 H11A4 H11A2 H11A1 H11AG3 H11AG3


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PDF 1N6264 1N6265 1N6266 4N25A 4N29A 4N32A 4N38A L14C2 MOC5010 MOC7811 TIL31A TIL903-1 TIL34A OP8815 SCS11C3 h2181 TIL143 opb814
2000 - Not Available

Abstract: No abstract text available
Text: MCT210 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 DESCRIPTION The MCT210 optically coupled isolator consists of an infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom


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PDF MCT210 E91231 MCT210 DB91089-AAS/A2
MCT210

Abstract: No abstract text available
Text: E SOLID STATE Optoelectronic Specifications. 01 DE 13075001 OOlWti T-Hl-23 Photon Coupled Isolator MCT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State MCT210 is a gallium arsenide, infrared emitting diode coupled with a silicon photo-transistor in a dual-in-line package. This device is also available in Surface-Mount packaging. TO Covered under U.L. component recognition program, reference file E51868 absolute maximum ratings: (25°C) INFRARED EMITTING


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PDF T-Hl-23 MCT210 MCT210 E51868 50/jA. 0110b
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