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Part Manufacturer Description Datasheet Download Buy Part
LT1995CDD#PBF Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: 0°C to 70°C
LT1363CS8#TR Linear Technology LT1363 - 70MHz, 1000V/µs Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1363CS8#PBF Linear Technology LT1363 - 70MHz, 1000V/µs Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1995IDD#PBF Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C
LT1995CMS#TR Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: MSOP; Pins: 10; Temperature Range: 0°C to 70°C
LT1995IDD#TR Linear Technology LT1995 - 30MHz, 1000V/µs Gain Selectable Amplifier; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C

MCT thyristor 1000v Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - "MOS Controlled Thyristors"

Abstract: MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTV65P1 2000A MOS MCT thyristor 1000v
Text: OL OBS MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor ( MCT ) Features Package JEDEC STYLE TO-247 · 65A, - 1000V · VTM -1.4V at I = 65A and +150oC ANODE , Description JEDEC MO-093AA (5-LEAD TO-218) The MCT is an MOS Controlled Thyristor designed for switching , ANODE CATHODE GATE RETURN GATE The MCT is especially suited for resonant (zero voltage or zero , VKA = +5V, VGA = +18V TYP TC = +150oC VKA = - 1000V , VGA = +18V IDRM MIN - -


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PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "MOS Controlled Thyristors" MCT thyristor MOS Controlled Thyristor M65P100F1 MCTV65P100F1 MOS-Controlled Thyristor 1000V MCT MCTV65P1 2000A MOS MCT thyristor 1000v
Not Available

Abstract: No abstract text available
Text: 65 A, 1000V P-Type MOS Controlled Thyristor ( MCT ) cess p *0 < Features Package JEDEC STYLE TO-247 • 65A,- 1000V ANODE • VTM < -1.4V at I = 65A and +150°C CATHODE (FLANGE) â , JEDEC MO-093AA (5-LEAD TO-218) The MCT is an MOS Controlled Thyristor designed for switching , GATE The MCT is especially suited for resonant (zero voltage or zero current switching , KA = - 1000V , V g a = +18V TYP T c = +25°C Peak Reverse Blocking Current !d r m MIN


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PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 000A/| MO-093AA O-218)
1995 - "mos controlled thyristor"

Abstract: MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
Text: MCTV65P100F1, MCTA65P100F1 S E M I C O N D U C T O R 65A, 1000V P-Type MOS Controlled Thyristor ( MCT ) April 1995 Features Package JEDEC STYLE TO-247 · 65A, - 1000V · VTM -1.4V at , Capability at +150oC Description JEDEC MO-093AA (5-LEAD TO-218) The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive voltage control of an , switching applications. ANODE ANODE CATHODE GATE RETURN GATE The MCT is especially suited for


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PDF MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC MO-093AA O-218) "mos controlled thyristor" MOS Controlled Thyristor MCTA65P100F1 1000V MCT M65P100F1 MCTV65P100F1 MCT thyristor MCT thyristor 1000v
1998 - M65P100F1

Abstract: RHRG75120 equivalent MCT thyristor 1000v
Text: MCT3A P-Type April 1998 See MCTV65P100F1, MCTA65P100F1 65A, 1000V MOS Controlled Thyristor ( MCT ) JEDEC STYLE TO-247 ANODE ANODE CATHODE GATE RETURN GATE Features · 65A, - 1000V · VTM -1.4V at I = , Control · 100A Gate Turn-Off Capability at +150oC Package CATHODE (FLANGE) Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive , switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or


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PDF 65P10 MCTV65P100F1, MCTA65P100F1 O-247 -1000V 150oC M65P100F1 RHRG75120 equivalent MCT thyristor 1000v
MOS Controlled Thyristor

Abstract: TA49226
Text: H A R R IS X MCT3A65P100F2, MCT3D65P100F2 Semiconductor 'NnV' 0 (lo<*6'N April 1999 65A, 1000V , P-Type MOS-Controlled Thyristor ( MCT ) p *0 Description Features 65A, - 1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and , °C 2000A Surge Current Capability The MCT is especially suited for resonant (zero voltage or zero , VTM i < C D *> O n-State Voltage MIN T c = 25°C V KA = - 1000V v G A-1 5 V II


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PDF MCT3A65P100F2, MCT3D65P100F2 -1000V 000A/| MOS Controlled Thyristor TA49226
1999 - MOS-Controlled Thyristor

Abstract: MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MOS-Controlled Thyristor to-247 100A gate turn-off 7E1L
Text: , MCT3 D65P1 00F2) /Subject (65A, 1000V , PType MOSControlled Thyristor ( MCT ) ) /Autho r , SS O PRO 65A, 1000V , P-Type MOS-Controlled Thyristor ( MCT ) Features Description · 65A, - 1000V The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative , 150oC · 2000A Surge Current Capability The MCT is especially suited for resonant (zero voltage or , - 1000V VGA = 15V VK = 5V VGA = 15V IK = IK110 VGA = -10V TC = 150oC TC = 25oC TC = 150oC TC =


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PDF MCT3A65P100F2, MCT3D65P100F2 A65P1 D65P1 -1000V 150oC MO-093AA MOS-Controlled Thyristor MOS Controlled Thyristor MCT thyristor TA49226 MCT harris MCT3A65P100F2 MCT thyristor 1000v MOS-Controlled Thyristor to-247 100A gate turn-off 7E1L
1998 - MCT harris

Abstract: M65P100F2 TA49226 scr 2032 MCT3A65P100F2 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
Text: S E M I C O N D U C T O R MCT3A65P100F2 MCT3D65P100F2 65A, 1000V , P-Type MOS-Controlled Thyristor ( MCT ) Description The MCT is an MOS Controlled Thyristor designed for switching currents on and , controls, inverters, line switches, and other power switching applications. The MCT is especially suited , 1998 Features · 65A, - 1000V · VTM = -1.4V (Max) at I = 65A and 150oC · 2000A Surge Current , Otherwise Specified SYMBOL IDRM TEST CONDITIONS VKA = - 1000V VGA = 15V VK = 5V VGA = 15V IK = IK110 VGA =


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PDF MCT3A65P100F2 MCT3D65P100F2 150nts 1-800-4-HARRIS MCT harris M65P100F2 TA49226 scr 2032 MCT thyristor MCT3D65P100F2 MOS-Controlled Thyristor MCT thyristor 1000v
1998 - MCT thyristor

Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
Text: 3A65P100F2, M Thyristor ( MCT ) T See MC Features · 35A, -600V · VTM = -1.35V (Max) at I = 35A and +150oC · , Turn-Off Capability at +150oC · Anti-Parallel Diode A A K GR G Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed , other power switching applications. The MCT is especially suited for resonant (zero voltage or zero , around the MCT in the reverse direction without introducing carriers into the depletion region


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PDF MCTV35P60F1D O-247 CT3D65 3A65P100F2, -600V 150oC factor/100) MCT thyristor MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
MCT thyristor

Abstract: MOS-Controlled Thyristor mct thyristor datasheet MOS-Controlled Thyristor N-type SMCT2TA32N14A10 half hour delay circuit MOS Controlled Thyristor silicon controlled rectified 100C
Text: thyristor , designed for the control of high power circuits with very small amounts of input energy. The MCT , 3 Northway Lane North Latham, New York 12110 ­ 2204 SMCT2TA32N14A10 SIZE 4 MCT SEMICONDUCTOR , lid mounted with 290C lead-tin-silver solder to the 14-mil thick n-type MCT . The lid overlaps the , of the MCT , the back of the silicon die is the ANODE connection. A flexible high temperature fill , capability. Note that the MCT during this test has a ­4 volt gate voltage. Test 4. This test is performed to


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PDF SMCT2TA32N14A10 150Deg MCT thyristor MOS-Controlled Thyristor mct thyristor datasheet MOS-Controlled Thyristor N-type SMCT2TA32N14A10 half hour delay circuit MOS Controlled Thyristor silicon controlled rectified 100C
1995 - MCT thyristor

Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
Text: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor ( MCT ) with , Anti-Parallel Diode Description The MCT is an MOS Controlled Thyristor designed for switching currents on , motor controls, inverters, line switches and other power switching applications. The MCT is especially , discrete anti-parallel diode that shunts current around the MCT in the reverse direction without , developmental type TA9789 ( MCT ) and TA49054 (diode). Absolute Maximum Ratings TC = +25oC, Unless


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PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
1999 - MCT thyristor

Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
Text: Thyristor ( MCT ) OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode , · 50A Gate Turn-Off Capability at +150oC · Anti-Parallel Diode Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of , power switching applications. The MCT is especially suited for resonant (zero voltage or zero current , around the MCT in the reverse direction without introducing carriers into the depletion region. G


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PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
MCT thyristor 1000v

Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R MCTV65P100F1, MCTA65P100F1 65A, 1000V P-Type MOS Controlled Thyristor ( MCT ) Package JE D E C S T Y LE TO -247 ANO DE CATHODE (FLA NG E) ANODE CATHODE GATE RETURN April 1 9 9 5 Features · 65A,- 1000V · VTM < -1.4V at I = 65A and +150°C · 2000A Surge Current , Controlled Thyristor designed for switching currents on and off by negative and positive voltage control of , . S W ITC H IN G TE S T W A V E FO R M S Handling Precautions for MCT 's Mos Controlled Thyristors


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PDF MCTV65P100F1, MCTA65P100F1 -1000V -093A MCT thyristor 1000v
1998 - MOS Controlled Thyristor

Abstract: MCT thyristor MCTV75P60E1 MA75P60E1
Text: RETURN GATE 75A, 600V P-Type MOS Controlled Thyristor ( MCT ) Package Features · 75A, -600V · VTM = , April 1998 NS ESIG 2 D 00F NEW S E M I C O N D U C T O R OR 3D65P1 F D NDE MCT MME 100F2, O C RE , Insulated Gate Control · 120A Gate Turn-Off Capability at +150oC Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an , switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching


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PDF 3D65P1 100F2, MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MOS Controlled Thyristor MCT thyristor MCTV75P60E1 MA75P60E1
MCT thyristor

Abstract: MOS-Controlled Thyristor half hour delay circuit 1400V MCT MOS-Controlled Thyristor N-type uf25c SMCT2TA65N14A10 100C s6 65a 5A 200V SCR die
Text: 3 Northway Lane North SMCT2TA65N14A10 Latham, New York 12110 ­ 2204 SIZE 6 MCT , MOS-controlled thyristor , designed for the control of high power circuits with very small amounts of input energy. The MCT features high peak current capability common to SCR type thyristors combined with , -mil thick alumina lid mounted with 290C lead-tin-silver solder to the 14-mil thick n-type MCT . The lid , bond areas of the MCT while the back of the silicon die is the ANODE connection. A flexible, high


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PDF SMCT2TA65N14A10 15volts. MCT thyristor MOS-Controlled Thyristor half hour delay circuit 1400V MCT MOS-Controlled Thyristor N-type uf25c SMCT2TA65N14A10 100C s6 65a 5A 200V SCR die
Not Available

Abstract: No abstract text available
Text: Thyristor ( MCT ) p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD â , -218) The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and , GATE The MCT is especially suited for resonant (zero voltage or zero current switching , FIGURE 16. VSPIKE TEST W AVEFO R M S Handling Precautions for MCT 's MOS Controlled Thyristors are , 's body capacitance is not discharged through the device. MCT 's can be handled safely if the following


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PDF MCTV75P60E1, MCTA75P60E1 O-247 000A/| O-093AA O-218)
1995 - MOS Controlled Thyristor

Abstract: MCTA75P60E1 MCTV75P60E1
Text: Thyristor ( MCT ) April 1995 Features Package JEDEC STYLE TO-247 5-LEAD · 75A, -600V ANODE , Capability at +150oC Description JEDEC MO-093AA (5-LEAD TO-218) The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an , switching applications. ANODE ANODE CATHODE GATE RETURN GATE The MCT is especially suited for , FIGURE 16. VSPIKE TEST WAVEFORMS Handling Precautions for MCT 's MOS Controlled Thyristors are


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PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MOS Controlled Thyristor MCTA75P60E1 MCTV75P60E1
1999 - MCT thyristor

Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
Text: MOS Controlled Thyristor ( MCT ) CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features , MO-093AA (5-LEAD TO-218) The MCT is an MOS Controlled Thyristor designed for switching currents , ANODE CATHODE GATE RETURN GATE The MCT is especially suited for resonant (zero voltage or zero , FIGURE 16. VSPIKE TEST WAVEFORMS Handling Precautions for MCT 's MOS Controlled Thyristors are , 's body capacitance is not discharged through the device. MCT 's can be handled safely if the following


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PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MCT thyristor MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
1999 - MOS Controlled Thyristor

Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
Text: MCTG35P60F1 Semiconductor April 1999 WN S ITHDRA DESIGN ART W P NO NEW EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor ( MCT ) Package · 35A , Turn-Off Capability at +150oC Description The MCT is an MOS Controlled Thyristor designed for , MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR , the handler's body capacitance is not discharged through the device. MCT 's can be handled safely if


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PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
1998 - MOS Controlled Thyristor

Abstract: mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits
Text: S E M I C O N D U C T O R April 1998 NS DESIG W E N 2 R P100F ED FO MEND 2, MCT3D65 M O C E P-Type NOT R T3A65P100F C M e e S MCTG35P60F1 35A, 600V MOS Controlled Thyristor ( MCT ) Package , at +150oC o A K G Description The MCT is an MOS Controlled Thyristor designed for switching , use in motor controls, inverters, line switches and other power switching applications. The MCT is , discharged through the device. MCT 's can be handled safely if the following basic precautions are taken: 1


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PDF P100F MCT3D65 T3A65P100F MCTG35P60F1 O-247 -600V 150oC MOS Controlled Thyristor mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits
1995 - MOS Controlled Thyristor

Abstract: MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"
Text: MCTG35P60F1 S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor ( MCT , · MOS Insulated Gate Control · 50A Gate Turn-Off Capability at +150oC Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed , other power switching applications. The MCT is especially suited for resonant (zero voltage or zero , discharged through the device. MCT 's can be handled safely if the following basic precautions are taken: 1


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PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"
Not Available

Abstract: No abstract text available
Text: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor ( MCT ) Features • 35A,-600V • VTM = , • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive , switches and other power switching applications. The MCT is especially suited for resonant (zero voltage , charge built in the handler's body capacitance is not discharged through the device. MCT 's can be


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PDF CTG35P60F1 -600V
MCT thyristor

Abstract: igbt subcircuit MCT harris
Text: Controlled Thyristor ( MCT ) and IGBT modules. The architecture of the HIP2030 includes four comparator input , m H A R R IS S E M I C O N D U C T O R HIP2030EVAL Isolated MCT /IGBT Gate Driver Evaluation , the HIP2030 MCT /IGBT Driver IC in power switching circuits. The component layout of the HIP2030EVAL , ,000pF · Ability to Drive MCT or IGBT Modules · Programmable Minimum ON/OFF (Times) · On Board , special functions that are unique to driving MCT power devices. These functions are called Minimum High


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PDF HIP2030EVAL HIP2030 200ns. TLP2601 MCT thyristor igbt subcircuit MCT harris
2003 - igbt inverter welder schematic

Abstract: MCT thyristor inverter welder schematic inverter welder schematic diagram inverter welder 4 schematic MOS Controlled Thyristor arc welder schematic HIP2030 igbt subcircuit arc welder inverter
Text: ideal for driving MOS Controlled Thyristor ( MCT ) and IGBT modules. 3000VDC Isolation 10,000V/µS dv , Isolated MCT / IGBT Gate Driver Evaluation Board November 1998 Features Description · · · · , . . . . . . . . . .200ns at 60,000pF Ability to Drive MCT or IGBT Modules Programmable Minimum ON , (HIP2030EVAL) is a printed circuit board (PCB) developed to help evaluate the performance of the HIP2030 MCT , Functions The HIP2030 provides two special functions that are unique to driving MCT power devices. These


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PDF HIP2030EVAL HIP2030 200ns. 3000VDC igbt inverter welder schematic MCT thyristor inverter welder schematic inverter welder schematic diagram inverter welder 4 schematic MOS Controlled Thyristor arc welder schematic igbt subcircuit arc welder inverter
1994 - isolated charge pump driver

Abstract: No abstract text available
Text: 200ns. The half bridge gate driver is ideal for driving MOS Controlled Thyristor ( MCT ) and IGBT modules , HIP2030EVAL S E M I C O N D U C T O R Isolated MCT /IGBT Gate Driver Evaluation Board , • Fast Rise Time . . . . . . . . . . . . . . . . . .200ns at 60,000pF • Ability to Drive MCT or , (HIP2030EVAL) is a printed circuit board (PCB) developed to help evaluate the performance of the HIP2030 MCT , HIP2030 provides two special functions that are unique to driving MCT power devices. These functions are


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PDF HIP2030EVAL 3000VDC HIP2030 200ns. HIP2030 TLP2601 isolated charge pump driver
1999 - mlt 22

Abstract: MCT thyristor k 3918 regulator Dual supply voltage regulator for 30vpp HIP2030 igbt subcircuit MOS Controlled Thyristor HIP2030EVAL TLP2601 MLT22
Text: No. AN9408.2 Intersil Intelligent Power November 1994 The HIP2030 MCT /IGBT Gate Driver , parts.The HFOIGD circuit is described in five subcircuits: a HIP2030 MCT /IGBT Driver Chip, a Single Supply , current needed to slew a specified dv/dt across a given gate capacitance. The Intersil HIP2030 MCT /IGBT , ideal for switching MCT or IGBT devices in power circuits. +30V B1+ B1- A+ 4 G- 6 24 23 , -2521 30V COM FIGURE 1. FIBER-OPTIC LINK ISOLATED MCT /IGBT GATE DRIVER www.intersil.com or


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PDF AN9408 HIP2030 mlt 22 MCT thyristor k 3918 regulator Dual supply voltage regulator for 30vpp igbt subcircuit MOS Controlled Thyristor HIP2030EVAL TLP2601 MLT22
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