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MCP1711T-30I/OT Microchip Technology Inc FIXED POSITIVE LDO REGULATOR
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MCP1711T-50I/5X Microchip Technology Inc FIXED POSITIVE LDO REGULATOR
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MCP1711T-22I/OT Microchip Technology Inc FIXED POSITIVE LDO REGULATOR
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Microchip
MCP1711T-12I/OT LDO Regulator Pos 1.2V 0.15A 5-Pin SOT-23 T/R - Tape and Reel (Alt: MCP1711T-12I/OT) MCP1711T-12I/OT ECAD Model
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Avnet Americas (2) MCP1711T-12I/OT 0 10 Weeks 3,000 - - - - $0.32967 Buy Now
MCP1711T-12I/OT Reel 0 10 Weeks 3,000 - - - - $0.32967 Buy Now
Avnet Europe MCP1711T-12I/OT 0 10 Weeks, 3 Days 3,000 - - - - $0.51615 Buy Now
Microchip Technology Inc
MCP1711T-12I/OT 600 nA Low Quiescent Current LDO MCP1711T-12I/OT ECAD Model
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Microchip Technology MCP1711T-12I/OT Reel 2,775 10 Weeks 1 $0.37 $0.37 $0.28 $0.27 $0.27 Buy Now
Onlinecomponents.com MCP1711T-12I/OT 3,000 - - - $0.4 $0.259 Buy Now
Transfer Multisort Elektronik MCP1711T-12I/OT 19 100 $0.78 $0.47 $0.37 $0.37 $0.37 Buy Now
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MCP1711T-12I/OT datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
MCP1711T-12I/OT MCP1711T-12I/OT ECAD Model Microchip Technology Integrated Circuits (ICs) - PMIC - Voltage Regulators - Linear - IC REG LINEAR 1.2V 150MA SOT23-5 Original PDF

MCP1711T-12I/OT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
mitsubishi rom ic

Abstract: M5M27C256AK-12 27C256K M5M27C256AK
Text: MITSUBISHI LSIs M5M27C256AK- 12I ,-15I 2 6 2 144-BIT(32768-WORD BY 8-BIT) CMOS ERASABLE AND , MITSUBISHI ELECTRIC 2-3 MITSUBISHI LSIs M5M27C256AK- 12I ,-15I 262144-BIT (32768-WORD BY 8 , to the device. This is a stress rating on :y and fu n ction al operatio n ot the d e vice c 3t these or ai any other con d ition s a b o ve those ind icated m the operational section s ot this sp ecitic , cond-tions M 5M 27C 256A K - 12I Mm M ax 120 120 60 0 0 50 M 5M 27C 256A K -15I M in M ax 150 150 75 0 0


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PDF M5M27C256AK-12I 144-BIT 32768-WORD 262144-bit 5M27C256AK-121, mitsubishi rom ic M5M27C256AK-12 27C256K M5M27C256AK
Not Available

Abstract: No abstract text available
Text: Thermal Resistance: 556°C/W Junction To Ambient I ectrlcal Characteristics @ 2 5 C Unless Ot lierwlse , Figure 2 Typical Reverse Characteristics 10 12Í HA .01 It .001 0 10 20 30 Volts


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PDF BAS16 300mW 75Volt 200mA 500mA 855mV 75Volts
Z6472-15

Abstract: EZ647
Text: ) INTERMODULATION DISTORTION vs. OUTPUT POWER 44 PC OT OUTPUT POWER, DRAIN AND GATE CURRENTS vs. INPUT POWER , . IS 12I MAG = Maximum Available Gain MSG = Maximum Stable Gain - JgglL IS 12I ur - 1 + I A , 1A I2 ~ lS l1 l 2 - lSg2l 2 , A = S 11 S 22 - S 21 S 12 IS 12I IS 12I 2 |S i 2 S 21 1 MAG = Maximum


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PDF NEZ6472-15D NEZ6472-15DD NEZ6472-8D NEZ6472-8DD NEZ6472-4D NEZ6472-4DD NEZ6472-15D/15DD NEZ6472-8D/8DD NEZ6472-4D/4DD -15DD Z6472-15 EZ647
Not Available

Abstract: No abstract text available
Text: GD Q N Ö G DQ N Ï Ordering Information I12II 12I H liä üä lizl bä OT C U N C OT


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PDF CA3292 600mA CA3292 CA3272,
BB22

Abstract: C682 C68207 H9005
Text: BmCirTWTIUB «1 TK MI POTCUTT OT t/D IKTtHOWCrr WC. lit*. Mm :mLi not k Bfp«r.MJCto, trot. £» uses 1» ANt , ) BARE copper, H.oo rr extended, non-ul UHSH1EUO, MODULAR CABLE GLX- 12I -X10-OX2 GLT-121-X10-OX2 I/O


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PDF GLX-12I-X10-OX2 GLT-121-X10-OX2 BB22 C682 C68207 H9005
012n3

Abstract: No abstract text available
Text: Lopt Transducer gain IS21el2 lc = 30 mA, VCE = 8 V, Zs =Z[= 50 Q 2) Gma = IS21/S 12I (k-(k2 , scalling is necessary. Extracted on behalf ot SIEMENS Small Signal Semiconductors by: Institut für


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PDF BFP193 900MHz Q62702-F1282 OT-143 012n3
2007 - Not Available

Abstract: No abstract text available
Text: NC 1 .8 V r ON 12Î © 12Î © 1 .8 V t ON / t OFF 70ns/ 52ns 70ns/ 52ns 3 V r ON , nt ersil Am ericas I nc. 2007, 2009. All Right s Reserved All ot her t radem arks m ent ioned are t , a t ion PART N UM BER ( N ot e s 1 , 4 ) PART M ARKI N G TEM P. RAN GE ( °C) PACKAGE , , VINL = 0.8V ( Not e 10) , Unless Ot herwise Specified. Boldfa ce lim it s a pply ove r t h e ope r a t , ) MI N ( N ot es 1 1 , 1 2 ) TYP M AX ( N ot es 1 1 , 1 2 ) UN I TS Full PARAM ETER


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PDF SL54501 SL54502 FN6550
2011 - Not Available

Abstract: No abstract text available
Text: %/8.0Ω 4.7 475 P 20%/20Ω A2*8%/18Ω P 20%/ 12Î © A2*8%/10Ω A 4%/7.5Ω J 20%/15Ω P 20%/ 12Î © A2*8%/7.5Ω A*8%/6.0Ω 685 P 20%/20Ω A2*8%/16Ω J 20%/15Ω P 20%/ 12Î © A2*8%/8.0Ω A*8%/6.0Ω J 20%/7.0Ω P 20%/ 12Î © A2*8%/7.5Ω A*8%/5.0Ω B 6%/3.5Ω A2 8%/8.0Ω A*8%/4.5Ω B 8%/3.0Ω J 20%/ 12Î © P 20%/ 12Î © A2*8%/15Ω J 20%/ 12Î © P 20%/ 12Î © A2*12%/8.0Ω A*8%/5.0Ω B 6%/3.5Ω J 20%/8.0Ω P 20%/ 12Î © A2*8%/10Ω A*8%/4.0Ω B 6%/3.0Ω P 20%/6.0Ω A2 8%/5.0Î


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PDF 50mm/Sec.
2009 - CFPP-12

Abstract: No abstract text available
Text: Compatibility & Load Tri-state HCMOS/TTL (5.0V) (CFPP-12, - 12I ) Maximum Capacitive Load TTL 40.0MHz TTL , variations over the operating temperature range) CFPP-9, -12 CFPP-9I, - 12I 0 to 70°C ­40 to 85 , -12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I 20.0MHz CFPP-9 I C Please note that the rise and fall times listed are the maximum values we


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PDF 2002/95/EC 150MHz CFPP-12, 100ps 250ps 175ps CFPP-12
fet to92

Abstract: SSM3J16TE SSM3J15TE 2SK2825 2SK2035 2SK1830 transistor ESM ssm3k14t SSM3J16FU SSM3K15FU
Text: Voltag 10 4Ω @V_GS=2.5V 12Î © @V_GS=2.5V TESM Y 3 Small-signal MOS FET ±10 5.2Ω @V_GS=1.5V 15Î , © @V_GS=-2.5V 32Ω @V_GS=-2.5V TESM Y 3 Small-signal MOS FET 10 4Ω @V_GS=2.5V 12Î © @V_GS=2.5V ESM Y 3 Small-signal MOS FET 10 4Ω @V_GS=2.5V 12Î © @V_GS=2.5V ESM Y 3 Built-in R_GS=1MΩ Small-signal MOS FET , Y 3 Small-signal MOS FET 8Ω @V_GS=2.5V 12Î © @V_GS=2.5V SSM Y 3 Small-signal MOS FET 10 4Ω @V_GS=2.5V 12Î © @V_GS=2.5V SSM Y 3 Built-in R_GS=1MΩ Small-signal MOS FET ±10 5.2Ω @V_GS=1.5V 15Î


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PDF SSM3K03TE SSM3K16TE SSM3K15TE SSM3J16TE SSM3J15TE SSM3K03FE SSM3K04FE 2SK1830 2SK2825 2SK2035 fet to92 SSM3J16TE SSM3J15TE transistor ESM ssm3k14t SSM3J16FU SSM3K15FU
Not Available

Abstract: No abstract text available
Text: ¼ˆ20) E12 (9) E12 (10) F12 ( 12ï ¼‰ C5 (40) C6 (20) SVP E7 (20) F8 , ¼‰ SVPC C6 (27,21,15) C6 (22) E7 (22) C6 (40) SVPE B6 ( 12ï , ¼ˆ25) F12 ( 12ï ¼‰ C6 (10) B6 (15) SVPS C6 (22) E7 (22) SVPC B6 ï , Characteristics Reliability SXV E7 (22) F8 (20) C6 (17) SVPG E12 ( 12ï ¼‰ E12 ( 12ï ¼‰ C6 (40) SVP Packing specifications (Radial lead type) F12 ( 12ï ¼‰ SVPB


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Yuasa NP7-12

Abstract: "RE" yuasa REL-B15-12 Yuasa REL-B24-12 Yuasa battery np yuasa FASTON connector JST VHR-2N RE yuasa
Text: .2-12 NP4-12 NP4-12L NP7-12 NP7-12L NP7-12FR NP12-12 NP17- 12I NP17-12IFR NP18-12 NP24- 12I NP24-12IFR NP38- 12I NP38-12IFR NP65- 12I NP65-12IFR 4.8 4.8 4.8 4.8 4.8 4.8 6.3 x x x x x x x , 8.99 13.48 13.48 22.67 22.67 27.5 27.5 NPL24- 12I NPL24-12IFR NPL38- 12I NPL38-12IFR NPL65- 12I NPL65-12IFR NPL78- 12I NPL78-12IFR RE SERIES (10 Year Life) 12 5 7 12 6.3 x 0.8mm Faston


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PDF effL78-12I NPL78-12IFR RE5-12 RE7-12 RE12-12 REL-B15-12 REL-B24-12 REL-B38-12 REL-B65-12 PG/0849 Yuasa NP7-12 "RE" yuasa REL-B15-12 Yuasa REL-B24-12 Yuasa battery np yuasa FASTON connector JST VHR-2N RE yuasa
m5m28f800-12

Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M28FB/T800VP- 12I 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS 3.3V / 5V Block Erase Flash Memory DESCRIPTIO N The Mitsubishi M o b ile F L A S H M5M28FB/T800VP- 12I is 3.3V (read , . The M5M28FB/T800VP- 12I is fabricated by CMOS technology for the peripheral circuits and DINOR (Divided , /Telecommunication 1 Rev. 4.1 '97-06-20 MITSUBISHI LSIs M5M28FB/T800VP- 12I 8,388,608-BIT (524,288 , Flash Memory BLOCK DIAGRAM 2 Rev. 4.1 '97-06-20 M ITSUBISHI LSIs M5M28FB/T800VP- 12I


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PDF M5M28FB/T800VP-12I 608-BIT 288-WORD 16-BIT) M5M28FB/T800VP-12I 608bit 100ms) m5m28f800-12
Not Available

Abstract: No abstract text available
Text: MITSUBISHI LSIs P R E LI M IN A R Y M5M28FB/T800VP- 12I Notice : This is not a final , 3.3V / 5V Block Erase Flash Memory DESCRIPTION The Mitsubishi M obileF L A SH M5M28FB/T800VP- 12I is , communication products. The M5M28FB/T800VP- 12I is fabricated by CMOS technology for the peripheral circuits and , '97-04-01 MITSUBISHI LSIs P R E LI M IN A R Y M5M28FB/T800VP- 12I Notice : This is not a final , LI M IN A R Y M5M28FB/T800VP- 12I Notice : This is not a final specification. Some parametric


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PDF M5M28FB/T800VP-12I 608-BIT 288-WORD 16-BIT) M5M28FB/T800VP-12I 608bit
2009 - Not Available

Abstract: No abstract text available
Text: © 0.68 684 - - - - A 4%/ 12Î © A*6%/10Ω 1.0 105 - - P 10%/25Ω P 10%/25Ω J 10%/30Ω P 20%/25Ω A2*6%/16Ω A 4%/10Ω 35 A 4%/18Ω A 4%/18Ω A 4%/15Ω A*6%/ 12Î , 20%/30Ω P 20%/20Ω A2*8%/ 12Î © A 4%/7.0Ω J 20%/25Ω P 20%/20Ω A2*8%/ 12Î © A*8%/5.5Ω J 20 , - P 20%/20Ω A2*8%/18Ω A 4%/8.0Ω 4.7 475 A2*8%/18Ω P 20%/ 12Î © A2*8%/10Ω A 4%/7.5Ω J 20%/15Ω P 20%/ 12Î © A2*8%/7.5Ω A*8%/6.0Ω 685 P 20%/20Ω A2*8%/16Ω P 20%/ 12Î


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PDF 50mm/Sec.
2005 - in4148 smd

Abstract: IN4148
Text: ) (CFPP-12, - 12I ) 1 50pF TTL > 40.0 to 150.0MHz 25pF HCMOS < 66.0MHz 50pF HCMOS , °C (CFPP-9I, - 12I ) Storage Temperature Range 2.4V 1.4V 20%Vs 0.4V ­55 to 125 , CFPP-12, - 12I 1.0 to 40.0MHz ±25ppm, ±50ppm, ±100ppm 5.0V ±0.5% 45mA 4ns 4ns 45 , , ±50ppm, ±100ppm 5.0V ±0.5% 45mA 4ns 4ns 45/55% CFPP-12, - 12I 3.3V ±0.5% 25mA , 40/60% CFPP-12, - 12I 3.3V ±0.5% 25mA 4ns 4ns 40/60% CFPP-9, -9I >100.0 to


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PDF CFPP-12, 250ps 175ps IN4148 in4148 smd IN4148
1997 - M5M28FB800

Abstract: No abstract text available
Text: PRELIMINARY MITSUBISHI LSIs M5M28FB/T800VP- 12I Notice : This is not a final specification , Block Erase Flash Memory DESCRIPTION The Mitsubishi MobileFLASH M5M28FB/T800VP- 12I is 3.3V (read , products. The M5M28FB/T800VP- 12I is fabricated by CMOS technology for the peripheral circuits and DINOR , PRELIMINARY MITSUBISHI LSIs M5M28FB/T800VP- 12I Notice : This is not a final specification. Some , # Rev. 4.0 `97-04-01 PRELIMINARY MITSUBISHI LSIs M5M28FB/T800VP- 12I Notice : This is not


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PDF M5M28FB/T800VP-12I 608-BIT 288-WORD 16-BIT) M5M28FB/T800VP-12I 608bit M5M28FB/T800VON M5M28FB800
SS0P28

Abstract: ST62T01CM6-SMD CDIP28 ST62E20CF1 ST62T30BB6 SS0P-28 ST62E65CF1 st62t60cb6 data eprom ic st62t15cb6
Text: noflpo6Han MH^opMauMn - b HaweM OTflene npofla«. Kofl: OnMcaHMe Kopnyc ST62E20CF1 MCU 12I /0 4KUV EPROM , MC 9I/0 2K ROM 64B RAM S016 ST62T03CB6 MCU 9I/0 1K ROM 64B RAM DIP16 ST62T10CB6 MCU 12I /0 2K ROM 64B RAM DIP20 ST62T10CM6-SMD MCU 12I /0 2K ROM 64B RAM S020 ST62T15CB6 MCU 20I/0 2K ROM 64B RAM DIP28 ST62T15CM6-SMD MCU 20I/0 2K ROM 64B RAM S028 ST62T20CB6 MCU 12I /0 4K ROM 64B RAM DIP20 ST62T20CM6-SMD MCU 12I /0


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PDF npe06pa30BaieneM G03flaBaTb ST62T10C DIP20/SO20/SSOP2Ã ST62T20C ST62E20C DIP20/S020 ST62T60C ST62T15C SS0P28 ST62T01CM6-SMD CDIP28 ST62E20CF1 ST62T30BB6 SS0P-28 ST62E65CF1 st62t60cb6 data eprom ic st62t15cb6
2SC4364

Abstract: No abstract text available
Text: follows: 40 2 80 60 3 120 100 4 200 (Note) Marking : OT hpE rank : 2,3,4 Package Dimensions 2018A (unit , 2.387 2.201 2.014 1.763 ¿ s 21 154.7 137.3 112.5 97.1 86.7 8 2.7 79.1 72.7 IS 12I 0.036 0.061


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PDF 2SC4364 2SC4364
Not Available

Abstract: No abstract text available
Text: M ITSUBISHI LSIs M5M28FB/T800VP- 12I 8,388,608-BIT (524,288-WORD BY 1 6-BIT) CMOS 3.3V / 5V Block Erase Flash Memory DESCRIPTION The Mitsubishi M o b ileF L A S H M5M28FB/T800VP- 12I is 3.3V , communication products. The M5M28FB/T800VP- 12I is fabricated by CMOS technology for the peripheral circuits and , '97-06-20 M ITSUBISHI LSIs M5M28FB/T800VP- 12I 8,388,608-BIT (524,288-WORD BY 1 6-BIT) CMOS 3.3V / 5V , /T800VP- 12I 8,388,608-BIT (524,288-WORD BY 1 6-BIT) CMOS 3.3V / 5V Block Erase Flash Memory FUNCTION


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PDF M5M28FB/T800VP-12I 608-BIT 288-WORD M5M28FB/T800VP-12I 100ms) 200nA
2005 - Not Available

Abstract: No abstract text available
Text: Compatibility s Tri-state HCMOS/TTL (5.0V) (CFPP-12, - 12I ) Maximum Capacitive Load for: TTL < 40.0MHz TTL , to 70°C (CFPP-9, -12) ­40 to 85°C (CFPP-9I, - 12I ) 50%Vs 2.4V 1.4V 0.4V 0V t T s Storage , % Model Number CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I CFPP-9, -9I CFPP-12, - 12I Ordering Example Frequency Model Number Operating Temperature Code: I =


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PDF CFPP-12, 100ps 250ps IN4148 175ps
2011 - Not Available

Abstract: No abstract text available
Text: EMFR-OGLAN G) 2 or 4 or 6 or 8 or 12ï ¼‰ ( C EMFR-OGFD- 4 or 8) OGNLAP MM50×2C EMFR-OGNLAP MM50× 2 or 4 or 6 or 8 or 12ï ¼‰ ( C EMFR-OGNLAP MM62.5× 4 or 8) ( C 層型 P.22 P.22 P.22 製品名 製品詳細 OGNLAP-SM- 4 or 6 or 8 or 12ï ¼‰ ( C OGNLAP SM × 4 or 6 or 8 or 12ï


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PDF
R1RW0416DSB-2PI

Abstract: R1RW0416DGE-2PR HM62W16255HCTT-10 HM62W16255HCLTT-12 HM62W16255HCLTT-10 HM62W16255HCLJP-12 HM62W16255HCLJP-10 HM62W16255HCJPI-12 GS8160Z36BT-200I HM62W16255HCJP-10
Text: -50 GS8342S36E-200 HM62W16255HCJPI-12 GS74116AJ- 12I HM66AEB36105BP-60 GS8342S36E , -333 HM62W16255HCTTI-10 GS74116ATP-10I HM66AEB9404BP-33 GS8342R09E-300 HM62W16255HCTTI-12 GS74116ATP- 12I , -167 HM62W8511HCJPI-12 GS74108AJ- 12I HM66AQB18202BP-30 GS8342Q18E-333 HM62W8511HCLJP-10 GS74108AJ , -2PR GS74104AJ-12 R1RW0408DGE-2LR GS74108AJ-12 R1RW0408DGE-2PI GS74108AJ- 12I R1RW0408DGE , -2PR GS74116ATP- 12I R1RW0416DSB-2LR GS74116AJ-12 R1RW0416DSB-2PI GS74116AJ- 12I R1RW0416DSB


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PDF HM62W16255HCJP-10 GS74116AJ-10 HM66AEB36105BP-33 GS8342S36E-300 HM62W16255HCJP-12 GS74116AJ-12 HM66AEB36105BP-40 GS8342S36E-250 HM62W16255HCJPI-10 GS74116AJ-10I R1RW0416DSB-2PI R1RW0416DGE-2PR HM62W16255HCTT-10 HM62W16255HCLTT-12 HM62W16255HCLTT-10 HM62W16255HCLJP-12 HM62W16255HCLJP-10 HM62W16255HCJPI-12 GS8160Z36BT-200I HM62W16255HCJP-10
Not Available

Abstract: No abstract text available
Text: Analog Power AM50N03- 12I N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs , temperature 1 November, 2003 - Rev. A PRELIMINARY Publication Order Number: DS-AM50N03- 12I _A Analog Power AM50N03- 12I o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter , PRELIMINARY Publication Order Number: DS-AM50N03- 12I _A Analog Power AM50N03- 12I Package Information 3 November, 2003 - Rev. A PRELIMINARY Publication Order Number: DS-AM50N03- 12I


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PDF AM50N03-12I O-252 DS-AM50N03-12I
ml 081

Abstract: BR571L MBR571LT1 21L2 marking motorola 039 MPS571 motorola J50 mbr5
Text: Transmission Coefficients versus Frequency VCE = 5-0 V, lc = 30 mA S 12 IS 12I 0.07 0.11 0.16 0 23 0.31 0.05 , Constant Gain and Noise Figure Contours (f = 0.5 GHz) VC E = 5 V IC = 10 mA = A rea ot Instability , 51 IS 12I 0.06 0.08 0.09 0.10 0.12 0.05 0.06 0.08 0.10 0.12 0.02 0.04 0.07 0.10 0.14 0.06 0.08 0.09 , 62 51 118 93 77 64 53 102 86 75 64 53 129 98 78 62 52 120 94 76 62 51 102 86 73 62 52 IS 12I 0.06


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PDF -226A RF5711LT1, A/500 MMBR571LT1) MRF5711LT1) Geometry71 MRF5711LT1 MRF571 MMBR571LT1 MPS571 ml 081 BR571L MBR571LT1 21L2 marking motorola 039 motorola J50 mbr5
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