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MC-454CB645FA-A10B datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
MC-454CB645FA-A10B MC-454CB645FA-A10B ECAD Model NEC 4M-Word BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Original PDF
MC-454CB645FA-A10B MC-454CB645FA-A10B ECAD Model NEC 4M-Word BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Scan PDF

MC-454CB645FA-A10B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - 4MX64

Abstract: PC100 8Mx64 A10B MC-458DA726F-A80
Text: SYNCHRONOUS DUAL INLINE MEMORY MODULES 32M TO 256M DENSITIES · 3.3V, 168PIN, UNBUFFERED, 1.3" HIGH WITH A GOLD FINISH 32M TO 256M SYNCHRONOUS DUAL INLINE MEMORY MODULES Part Number MC-454CB645FA-A10B MC-454CB646F-A10 MC-454CB646F-A80 MC-458CB645F- A10B MC-458CB646F-A10 MC-458CB646F-A80 MC-458CA725F- A10B MC-458CA726F-A10 MC-458CA726F-A80 MC-458DA726F-A10 MC-458DA726F-A80 MC-4516CD645F- A10B MC-4516CD646F-A10 MC-4516CD646F-A80 MC-4516CC725F- A10B MC-4516CC726F-A10 MC-4516CC726F-A80 MC-4516DA726F-A10 MC


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PDF 168PIN, MC-454CB645FA-A10B MC-454CB646F-A10 MC-454CB646F-A80 MC-458CB645F-A10B MC-458CB646F-A10 MC-458CB646F-A80 MC-458CA725F-A10B MC-458CA726F-A10 MC-458CA726F-A80 4MX64 PC100 8Mx64 A10B MC-458DA726F-A80
1998 - Not Available

Abstract: No abstract text available
Text: number Clock frequency (MAX.) MC-454CB645FA-A10B 100 MHz 168-pin Dual In-line Memory Module (Socket Type , Family /CAS latency Clock frequency (MAX.) MC-454CB645- A10B CL = 3 CL = 2 100 MHz 67 MHz Clock access , -pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated) [MC- 454CB645FA ] /XXX indicates , latency = 2 - A10B /CAS latency = 3 - A10B /CAS latency = 2 - A10B /CAS latency = 3 - A10B Self refresh , 40 20 16 100 mA mA 24 Test condition Grade /CAS latency = 2 - A10B /CAS latency = 3 - A10B MIN. MAX


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PDF MC-454CB645 72-BIT MC-454CB645 PD4564163 MC-454CB645-A10B
1999 - Not Available

Abstract: No abstract text available
Text: Part number /CAS latency Clock frequency (MAX.) MC-454CB645FA-A10B CL = 3 CL = 2 MC-454CB645LFA- A10B CL , revised points. © 1998 MC-454CB645 Ordering Information Part number Clock frequency (MAX.) MC-454CB645FA-A10B 100 MHz 168-pin Dual In-line Memory Module (Socket Type) Edge connector : Gold plated MC-454CB645LFA- A10B , MC-454CB645 DC Characteristics (Recommended Operating Conditions Unless Otherwise Noted) [MC- 454CB645FA , 2.5 1 2.5 2.5 7 8 10 15 - A10B MAX. (100 MHz) (67 MHz) 7 8 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns


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PDF MC-454CB645 64-BIT MC-454CB645 PD4564163 MC-454CB645FA-A10B MC-454CB645LFA-A10B
MC-454CB645FA-A10B

Abstract: wv 38 MC-454CB645
Text: (MAX.) Active Standby MC-454CB645FA-A10B CL = 3 100 MHz 7 ns 2,376 mW 7.2 mW (CMOS level input , devices MC-454CB645FA-A10B 100 MHz 168-pin Dual In-line Memory Module (Socket Type) Edge connector: Gold , M13296EJ4V0DS00 NEC MC-454CB645 Synchronous Characteristics Parameter Symbol - A10B Unit Note MIN. MAX , Characteristics Parameter Symbol - A10B Unit Note MIN. MAX. REF to REF/ACT command period tRC 90 ns , Datasheet M13296EJ4V0DS00 NEC MC-454CB645 Package Drawings ★ [MC- 454CB645FA , MC-454CB645LFA] 168 PIN


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PDF MC-454CB645 64-BIT MC-454CB645 PD4564163 MC-454CB64LFA] M168S-50A88 M13296EJ4V0DS00 MC-454CB645FA-A10B wv 38
MC-454CB645FA-A10B

Abstract: MC-454CB645
Text: devices (MAX.) MC-454CB645FA-A10B 100 MHz 168-pin Dual In-line Memory Module 4 pieces of , 7 ns 2,376 mW 7.2 mW CL = 2 MC-454CB645- A10B Clock frequency Power consu mption , Socket Type (Edge connector: Gold plated) [MC- 454CB645FA ] /XXX indicates active low signal. 85 86 87 , Characteristics Parameter Symbol - A10B Unit MIN. Clock cycle time Note MAX. tCK3 10 , -454CB645 Asynchronous Characteristics Parameter Symbol - A10B MIN. Unit Note MAX. REF to REF/ACT


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PDF MC-454CB645 64-BIT MC-454CB645 PD4564163 MC-454CB645FA-A10B
Not Available

Abstract: No abstract text available
Text: Part number Clock frequency Package Mounted devices (MAX.) MC-454CB645FA-A10B 100 MHz , .) Active Standby CL = 3 100 MHz 7 ns 2,376 mW 7.2 mW CL = 2 MC-454CB645- A10B , -454CB645 Pin Configuration 168-pin Dual In-line Memory Module Socket Type (Edge connector: Gold plated) [MC- 454CB645FA , - A10B Unit MIN. Clock cycle time Note MAX. tc K 3 10 (100 MHz) ns /CAS , Parameter Symbol - A10B MIN. REF to REF/ACT command period Unit Note MAX. tR C 90


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PDF MC-454CB645 64-BIT MC-454CB645 uPD4564163
Not Available

Abstract: No abstract text available
Text: Configuration 168-pin Dual In-line Mem ory Module Socket Type (Edge connector: Gold plated) [MC- 454CB645FA , -454CB645 - A10B MAX. (100 MHz) (67 MHz) 7 8 3.5 3.5 3 0 3 3 2.5 1 2.5 1 2.5 1 2.5 2.5 7 8 Unit Note tcK3 , time Transition time Refresh time /CAS latency = 3 /CAS latency = 2 tR C MC-454CB645 - A10B MAX


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PDF MC-454CB645 64-BIT MC-454CB645 uPD4564163 MC-454C B645-A10
1998 - Not Available

Abstract: No abstract text available
Text: Family /CAS latency Clock frequency (MAX.) MC-4516CD645- A10B CL = 3 CL = 2 100 MHz 67 MHz Clock access , devices 16 pieces of µPD4564841G5 (Rev. E) (400 mil TSOP (II) [Double side] MC-4516CD645FA- A10B 168 , - A10B /CAS latency = 3 - A10B /CAS latency = 2 - A10B /CAS latency = 3 - A10B Self refresh current Input , 16 +16 +500 +3.0 mA mA 3 mA 2 160 80 64 400 mA mA 96 Test condition Grade /CAS latency = 2 - A10B /CAS latency = 3 - A10B MIN. MAX. 720 800 16 8 320 mA mA Unit Notes mA 1 µA µA µA V V Notes 1. ICC1


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PDF MC-4516CD645 16M-WORD 64-BIT MC-4516CD645 PD4564841 MC-4516CD645-A10B
Not Available

Abstract: No abstract text available
Text: MC-454CB64S- A10B (MAX.) CL = 3 MC-454CB64S-A10 Clock access time (MAX.) MC , ) (Socket Type) MC-454CB64S-A10 100 MHz Edge connector: Gold plated 25.4 mm (1 inch) height MC-454CB64S- A10B , voltage = 2 660 - A10B /CAS latency = 780 -A10 /CAS latency -A80 - A10B tRC>tRC(MIN.) 3 440 -A10 |CC5 = 520 - A10B /CAS latency 660 -A10 = -A80 - A10B lo = 0m A 40 -A10 |CC4 tcK>tcK(MiN.), , Input signals are stable


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PDF MC-454CB64S 64-BIT MC-454CB64S uPD4564163
1999 - MC-458CD64LS

Abstract: No abstract text available
Text: CL = 2 MC-458CD64S-A10 CL = 3 CL = 2 MC-458CD64S- A10B CL = 3 CL = 2 MC-458CD64S-A10BL CL = 3 CL = 2 MC-458CD64LS- A10B CL = 3 CL = 2 MC-458CD64LS-A10BL CL = 3 CL = 2 125 MHz 100 MHz 100 MHz 77 MHz 100 , -458CD64S-A80 MC-458CD64S-A10 MC-458CD64S- A10B MC-458CD64S-A10BL MC-458CD64LS- A10B MC-458CD64LS-A10BL 125 MHz 100 , ICC1 Test condition Burst length = 1, tRC tRC(MIN.) /CAS latency = 2 -A80 -A10 - A10B /CAS latency = 3 -A80 -A10 - A10B Precharge standby current in power down mode Precharge standby current in non power


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PDF MC-458CD64S, 458CD64LS 64-BIT MC-458CD64S MC-458CD64LS PD4564163 MC-458CD64S-A80 MC-458CD64S-A10
Not Available

Abstract: No abstract text available
Text: 100 MHz 7 ns CL = 2 67 MHz 8 ns MC-458CB64LSA- A10B MC-458CB64ESB-A1 OB • Fully , -458CB64SA-A10 125 MHz (400 mil TSOP (II) Edge connector: Gold plated 26.67 mm (1.05 inch) height MC-458CB64SA- A10B , ) 100 MHz 144-pin Small Outline DIMM 4 pieces of /¿PD45128163G5 (Rev. E) (Socket Type) MC-458CB64ESB- A10B , latency = 3 -A80 840 -A10 640 - A10B 560 /CAS latency = 3 -A80 1,040 3 1,040 840 -A80 1,080 -A10 1,080 - A10B |CC6 mA 840 - A10B tR C > tR C (M IN .


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PDF MC-458CB64SA, 458CB64LSA, MC-458CB64ESB 64-BIT MC-458CB64SA C-458CB64LSA uPD4564841 MC-458CB64ESB uPD45128163
1999 - Not Available

Abstract: No abstract text available
Text: CL = 2 MC-454CB64S-A10 CL = 3 CL = 2 MC-454CB64S- A10B CL = 3 CL = 2 MC-454CB64S-A10BL CL = 3 CL = 2 MC-454CB64LS- A10B CL = 3 CL = 2 MC-454CB64LS-A10BL CL = 3 CL = 2 125 MHz 100 MHz 100 MHz 77 MHz 100 , 25.4 mm (1 inch) height MC-454CB64S- A10B 100 MHz 4 pieces of µPD4564163G5 (Rev. E) (400 mil TSOP (II , (II) MC-454CB64LS- A10B 100 MHz MC-454CB64LS-A10BL 100 MHz 2 Data sheet , -A80 -A10 - A10B /CAS latency = 3 -A80 -A10 - A10B Precharge standby current in power down mode Precharge


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PDF MC-454CB64S, 454CB64LS 64-BIT MC-454CB64S MC-454CB64LS PD4564163 MC-454CB64S-A80 MC-454CB64S-A10
MC-454CB64S-A10

Abstract: MC-454CB64S-A10B MC-454CB64S-A10BL MC-454CB64S-A80
Text: CL = 3 100MHz 7ns 2,376 mW CL = 2 MC-454CB64S-A10BL (MAX.) CL = 2 MC-454CB64S- A10B , . E) (Socket Type) Edge connector : Gold plated 25.4 mm (1 inch) height MC-454CB64S- A10B MC , 0 mA /CAS latency = 2 mA 660 660 -A80 520 520 420 -A80 540 540 - A10B 460 -* 4 -*L CKE 0.2 V 780 -A10 ICC6 -A80 - A10B /CAS latency = 3 440 -A10 /CAS latency = 2 520 - A10B tRC tRC(MIN.) 660 -A10 ICC5 -A80 -A10 /CAS


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PDF MC-454CB64S 64-BIT MC-454CB64S PD4564163 MC-454CB64S-A10 MC-454CB64S-A10B MC-454CB64S-A10BL MC-454CB64S-A80
1999 - Not Available

Abstract: No abstract text available
Text: -458CB64SA-A80 CL = 3 CL = 2 MC-458CB64SA-A10 CL = 3 CL = 2 MC-458CB64SA- A10B CL = 3 CL = 2 MC-458CB64SA-A10BL CL = , ,312 mW 3,024 mW 3,312 mW 3,024 mW 3,312 mW 3,024 mW 14.4 mW · · MC-458CB64LSA- A10B CL = 3 CL , Ordering Information Part number Clock frequency MHz (MAX.) MC-458CB64SA-A80 MC-458CB64SA-A10 MC-458CB64SA- A10B MC-458CB64SA-A10BL MC-458CB64LSA- A10B MC-458CB64LSA-A10BL 125 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 , condition Burst length = 1, tRC tRC(MIN.) IO = 0 mA /CAS latency = 2 -A80 -A10 - A10B /CAS latency = 3 -A80


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PDF MC-458CB64SA, 458CB64LSA 64-BIT MC-458CB64SA MC-458CB64LAS PD4564841 MC-458CB64SA-A80 MC-458CB64SA-A1es,
c458c

Abstract: C-458C MC-458CB64SA-A1OBL pd4564841
Text: -458CB64SA-A80 CL = 3 CL = 2 M C -458C B64SA-A10 CL = 3 CL = 2 M C -458CB64SA- A10B CL = 3 CL = 2 M C -458C , = MIN. -A80 -A10 - A10B MAX. 640 560 520 680 600 600 8 4 Unit mA Notes 1 1, tR c > tR c A10B Precharge standby , 80 2 -A80 -A10 - A10B 840 640 560 1,000 840 840 1,040 1,040 840 1,080 1,080 920 8 3.2 -8 -1 .5 2.4 0.4 , /C AS latency = 3 -A80 -A10 - A10B CBR (Auto) refresh current |CC5 tR C > tR C (M IN


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PDF MC-458CB64SA, 458CB64LSA 64-BIT MC-458CB64SA MC-458CB64LAS PD4564841 -458CB64SA-A80 M12263EJ8V0DS00 c458c C-458C MC-458CB64SA-A1OBL
2000 - A80L

Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
Text: ) (cycles /ms) 3.3±0.3 8K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 A10BL 3 2 , ) (V) (cycles /ms) 3.3±0.3 8K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 , PC100 (222) PC100 7 (322) - 8 × × 256M5 4M×16×4 µPD45256163 A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 , ) 3.3±0.3 4K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 A10BL 3 2 125 100 100 77 , ) 3.3±0.3 4K/64 LVTTL G5: 54pin TSOP(ll) A80 3 2 A10 3 2 A10B 3 2 A80L 3 2 A10L 3 2 A10BL 3 2 125 100 100 77


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PDF X13769XJ2V0CD00 DRAMSDR256M× 8K/64 54pin A10BL PC100 400mil) PC133 A80L PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
C-458CD64S-A10B

Abstract: No abstract text available
Text: -458CD64S-A80 CL = 3 CL = 2 M C-458CD 64S-A10 CL = 3 CL = 2 M C-458CD64S- A10B CL = 3 CL = 2 M C-458CD 64S-A10BL CL = 3 CL = 2 M C -458CD64LS- A10B CL = 3 CL = 2 M C -458CD 64LS-A10BL CL = 3 CL = 2 125 MHz 100 MHz 100 , -458CD 64S-A10 M C -458CD64S- A10B M C-458C D64S-A10BL MC-458CD64LS-A1 OB MC-458CD64LS-A1OBL 125 MHz 100 MHz , (MiN.) MIN. /C AS latency = 2 -A80 -A10 - A10B /C AS latency = 3 -A80 -A10 - A10B MAX. 460 420 380 , stable. /C AS latency = 2 -A80 -A10 - A10B /C AS latency = 3 -A80 -A10 - A10B 80 760 620 540 880 760 760


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PDF MC-458CD64S, 458CD64LS 64-BIT MC-458CD64S MC-458CD64LS PD4564163 C-458CD64S-A80 C-458CD 13041EJ6V0D C-458CD64S-A10B
Not Available

Abstract: No abstract text available
Text: *L CKE < 0.2 V 760 - A10B |CC6 880 -A10 /CAS latency = 3 -A80 - A10B /CAS latency = 2 580 -A10 tR C > tR C (M IN .) 620 - A10B |CC5 760 -A10 /CAS latency = 3 -A80 - A10B Self refresh current mA 120 -A10 |CC4 (Burst mode) Refresh , - A10B tR c > tR c < M iN .) Notes -A10 Burst length = 1, Unit - A10B Ic c i MAX , - A10B Unit MIN. Clock cycle time MAX. MIN. MAX. MIN. Note MAX. tc K 3 8


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PDF MC-4516CD64S 64-BIT MC-4516CD64S uPD45128163
Not Available

Abstract: No abstract text available
Text: latency = 2 -A80 -A10 - A10B /CAS latency = 3 -A80 -A10 - A10B MAX. 360 360 280 460 460 360 4 2 Unit , . /CAS latency = 2 -A80 -A10 - A10B /CAS latency = 3 -A80 -A10 - A10B 40 660 520 440 780 660 660 520 520 , -A80 -A10 - A10B /CAS latency = 3 -A80 -A10 - A10B Self refresh current Input leakage current , -A 10 - A10B 10 CL =3 Access time -A80 -A10 - A10B 11 12 13 14 15 16 17 18 19 20 21 22 23 DIMM , SDRAM module attributes SDRAM device attributes : General CL = 2 Cycle time -A80 -A10 - A10B 24 CL = 2


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PDF MC-454CB64S 64-BIT MC-454CB64S uPD4564163 MC-454CB64S-A80 MC-454CB64S-A10 MC-454CB6
Not Available

Abstract: No abstract text available
Text: ), tcK = tcK = Unit Notes 720 mA 1 /CAS latency = 3 - A10B 0 mA MAX. /CAS latency = 2 - A10B 1 Grade MIN. 800 15 ns 16 mA 8 00 15 ns, /CS > V 320 , signals are stable. Operating current |C 4 C |C 5 C 760 /CAS latency = 3 - A10B 1,040 tR C > t R C (MIN.) /CAS latency = 2 - A10B 1,040 /CAS latency = 3 - A10B Refresh current /CAS latency = 2 - A10B lo = 0m A (Burst mode) t c K > t c K (M IN .) 1,120 Self refresh


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PDF MC-4516CD645 16M-WORD 64-BIT MC-4516CD645 uPD4564841
1998 - a10b

Abstract: ns4248 MC-4516CD64S-A10 MC-4516CD64S-A10B MC-4516CD64S-A10BL MC-4516CD64S-A80 PD45128163
Text: CL = 2 77 MHz 7 ns 3,816 mW CL = 3 100 MHz 7 ns 3,672 mW CL = 2 MC-4516CD64S- A10B , (Socket Type) (400 mil TSOP (II) MC-4516CD64S- A10B 100 MHz Edge connector : Gold plated MC , ,100 - A10B 1,020 -* 16 -*L CKE 0.2 V 760 -A10 ICC6 880 - A10B /CAS latency = 3 -A80 -A10 /CAS latency = 2 580 - A10B tRC tRC(MIN.) 620 -A10 ICC5 760 -A10 /CAS latency = 3 -A80 - A10B Self refresh current mA 48 (Burst mode


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PDF MC-4516CD64S 64-BIT MC-4516CD64S PD45128163 a10b ns4248 MC-4516CD64S-A10 MC-4516CD64S-A10B MC-4516CD64S-A10BL MC-4516CD64S-A80
Not Available

Abstract: No abstract text available
Text: CL = 2 77 MHz 7 ns 2,232 mW CL = 3 100 MHz 7 ns 2,736 mW CL = 2 MC-458CD64S- A10B , ) (400 mil TSOP (II) MC-458CD64S- A10B 100 MHz Edge connector: Gold plated MC , -A80 560 460 - A10B /CAS latency = 2 Notes -A10 Burst length = 1, tRc>tRC(MiN.) Unit - A10B Icci MAX. -A10 Operating current Symbol 460 |CC2P CKE < V il , < 0.2 V 760 - A10B |CC6 880 -A10 Self refresh current -A80 - A10B /CAS latency = 3


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PDF MC-458CD64S 64-BIT MC-458CD64S uPD4564163
2000 - MC-458CB64ESB

Abstract: MC-458CB64ESB-A10B MC-458CB64PSB MC-458CB64PSB-A10B PD45128163
Text: · Clock frequency and access time from CLK 5 MC-458CB64PSB- A10B Access time from CLK CL = 3 100 MHz 7 ns 67 MHz 8 ns CL = 3 100 MHz 7 ns CL = 2 MC-458CB64ESB- A10B , ) (Socket Type) MC-458CB64ESB- A10B (10.16mm (400) TSOP (II) Edge connector: Gold plated 5 MC-458CB64PSB- A10B , -458CB64ESB, 458CB64PSB Synchronous Characteristics Parameter Symbol - A10B MIN. Clock cycle time Unit , M12263EJAV0DS00 1 MC-458CB64ESB, 458CB64PSB Asynchronous Characteristics Parameter Symbol - A10B


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PDF MC-458CB64ESB, 458CB64PSB 64-BIT MC-458CB64ESB MC-458CB64PSB PD45128163 MC-458CB64PSB-A10B MC-458CB64ESB-A10B MC-458CB64PSB-A10B
1998 - PD23C64020

Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
Text: A10B A80L A10L A10BL 3 2 3 2 3 2 3 2 3 2 133 125 100 100 77 100 67 125 100 100 77 100 67 8 5: Under , access /CAS frequency time latency (MHz) MAX. (ns) 3 3 2 A10 A10B A80L A10L A10BL 3 2 3 2 3 2 3 2 3 2 133 , ) 3 2 A10 A10B A80L A10L A10BL 3 2 3 2 3 2 3 2 3 2 125 100 100 77 100 67 125 100 100 77 100 67 8 5 , frequency time latency (MHz) MAX. (ns) 3 3 2 A10 A10B A80L A10L A10BL 3 2 3 2 3 2 3 2 3 2 133 125 100 100 77 , access /CAS frequency time latency (MHz) MAX. (ns) 3 3 2 A10 A10B A80L A10L A10BL 3 2 3 2 3 2 3 2 3 2 133


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PDF X13769XJ2V0CD00 A10BL 8K/64 256M5 PD45256441 54-pin PC133 PC100 MC-22000 PD23C64020 PD45D128442 4M84 PD45D128842 0443 IC PD23C64000AL 45V16A PD264 A80L
MC-454AC725F-A80

Abstract: No abstract text available
Text: 4,147 mW CL = 2 MC-454AC725- A10B Active CL = 2 5 (MAX.) CL = 2 MC , ) height (400 mil TSOP (II) [Double side] MC-454AC725F-A12 5 125 MHz 83 MHz MC-454AC725F- A10B , 4.6 MC-454AC725F- A10B 5 MC-454AC725F-A80, -A10, -A12 2.0 VCC+0.3 Low level input , MC-454AC725 5 [MC-454AC725F- A10B ] Parameter Operating current Symbol Grade MIN. MAX , down mode Burst length = 1 /CAS latency = 2 - A10B 1,062 tRC tRC (MIN.), IO = 0 mA


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PDF MC-454AC725 72-BIT MC-454AC725 PD4516821A MC-454AC725F-A80
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