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    MC-41A

    Abstract: mcl31 MCD-707 Garage mc12 MCL 31 MC69 mcl 606 25 mcl MCL-25-A
    Text: MC-31 MCL-31A 15mm length short body of MC-31 Regular gap : MC-41A :13mm/up MCL- 41A :18mm/up MC-41 MCL- 41A Regular gap(on the non-steel door) : MC-44A:30mm/up MCL-44A:40mm/up MCD-44A:30mm


    Original     		PDF MC-12 20mm/up 15mm/up MCL-12A 35mm/up MC-12 MCL-12A 30mm/up MC-13 MCD-13 MC-41A mcl31 MCD-707 Garage mc12 MCL 31 MC69 mcl 606 25 mcl MCL-25-A
    1RF624

    Abstract: No abstract text available
    Text: See Fig 5 VD0=125V, lD = 4.1A , R6=18Q See Fig 13 VDS=200V,VG8=10V, Id= 4.1A See Fig 6 & Fig 12 @© @ , M OSFET T j= 2 5 1 , ls= 4.1A ,VQS=0V T j= 2 5 t:,lF= 4.1A dÌF/dt=100A/MS ® trr Q, Notes; 4.1A , Vdo=50V, Ra


    OCR Scan     		PDF 1RF624A IRF624A 1RF624
    Not Available

    Abstract: No abstract text available
    Text: =1MHz See Fig 5 VO D =125V,lD = 4.1A , ns RG =18Q See Fig 13 VD S =2Q0V,VG S =10V, nC l0= 4.1A See Fig 6 & , MOSFET T j=25 1 ,ls=4.1 A,VG S =0V TJ=25TC,IF = 4.1A dip/dt=100A/MS ® - - 4.1 16 1.5 - A Vso , Maximum Junction Temperature © L=8mH, l«= 4.1A , VO D =50V, RG =27i2, Starting Tj =251 < 3 > lsos: 4.1A , di


    OCR Scan     		PDF IRFW/I624A
    1041A

    Abstract: 1RF624
    Text: 4.1 A - - 16 in the M OSFET - - - 135 0.65 1.5 - - V ns MC T ,=25" C , ls= 4.1A ,VGS=0V T j= 2 5 t!,lF= 4.1A dif/dt=100A/ps @ Qrr - Notes; © Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature © L=8mH, 1*3=4.1 A, Vm*50V, Rg=27£2, Starting T, = 2 5 t lsos 4.1A


    OCR Scan     		PDF IRF624A 1041A 1RF624
    IRFM224A

    Abstract: LS04
    Text: ,f =1MHz See Fig S VD 0=125V,Id= 4.1A , ns R ^ IS Q See Fig 13 Vds^OOV.V g^IO V , nC Iq- 4.1A See Fig , =0V T j= 2 5 t,lF= 4.1A diF /dt=100A/MS ® - - 0.92 7 1.5 - A V ns MC - 135 0.65


    OCR Scan     		PDF IRFM224A OT-223 200nF p300nF IRFM224A LS04
    irfs624a

    Abstract: No abstract text available
    Text: = 4.1A , ns RG =18Q ^d(on) », See Fig 13 VO S =200V, VG S =10V, nC l0= 4.1A See Fig 6 & Fig 12 , pn-diode in the MOSFET T|=25`C,IS =3.4A,VG S =0V TJ=25'C,lf:= 4.1A dÌF/dt=100A/Ms ® - - 3.4 14 1.5 -


    OCR Scan     		PDF IRFS624A 100tl) irfs624a
    Not Available

    Abstract: No abstract text available
    Text: W/K Vq s -OV, V d s - 25V, 1-1.0MHz V do - 95V, l0- 41A . V<3S-10V, R s OURCE"3-3^ * 24 30 m il VGS , (on)ma*. V q s -IO V V q s "V g S ' lo" 1-0mA VO S>50V, I0- 41A Vos*Vpgmax, VQg«0v VGS-10V.Tc-125°C, V


    OCR Scan     		PDF E2798 IRFK3D250 IRFK3F250 E78996. T0-240
    S41A

    Abstract: No abstract text available
    Text: Condition Integral reverse pn-diode in the MOSFET T,=25`C,IS = 4.1A ,VG S =0V TJ=25`C,lf:=5A dip/dt^OOA/ns @ , , Duty Cycle ^ 2% © Essentially Independent of Operating Temperature L=7mH, l*s= 4.1A , Vdd=50V, Rg= 2 7 Q


    OCR Scan     		PDF IRFS620A S41A
    g18Q

    Abstract: No abstract text available
    Text: =125V,Id= 4.1A , ns t, Q* Q«, Q gU R g=18Q See Fig 13 VO S=200V,VGS=10V, ®© nC - 6.4 , reverse pn-diode in the MOSFET Tj=251,ls=3.8A,VGS=0V Tj= 25t,lF= 4.1A diF/dt=100A/Ms ® - - 3.8 15


    OCR Scan     		PDF IRFR/U224A g18Q
    c1251c

    Abstract: c-1251C *c1251c
    Text: . Units - Test Condition Integral reverse pn-diode in the MOSFET T j=25'C,Is= 4.1A ,Vgs=0V T j= 2 5 t,lF , ; © Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature © L=3mH, Ias= 4.1A , Vdd=50V, Rq


    OCR Scan     		PDF IRLS620A c1251c c-1251C *c1251c
    uniwatt

    Abstract: MPSU51 MPSU51A MPS-U51A MPS-U51 MPS-U01 MPSU01 MPSU01A u51a temperature MPS-U01A
    Text: -1 to the device title. H «-R STYIS1: — 41⠀” J PIN REMITTER 2. BASE ICOUECTOfl ICOUECTOfl


    OCR Scan     		PDF MPS-U01A MPS-U51 MPS-U51A MPS-U01 MPS-U01A 10red 0l285 1X155 uniwatt MPSU51 MPSU51A MPS-U51A MPSU01 MPSU01A u51a temperature
    BA-1RV543510-A2

    Abstract: No abstract text available
    Text: PLACÍ X,I «.4/ 41 « TWO PLACI* >,■* t.tt/jai TMNCI PLACC« ^ AMAltl M MC T UIC MMN UMTS Q om toc. la


    OCR Scan     		PDF BA-1RV543510-A2 A173287-J C093346 BA-1RV543510-A2
    Not Available

    Abstract: No abstract text available
    Text: DESIGN UNITS' H B unac R R T MT IC (nn) ER [IN ES] CH - o REVISION FIRST ANGLE PROJECTION REV. BESCRPTIDN D TE A B Y. EC N . N O 8.0x(P-1)+4.8 NOTES: 1. Rating: UL 50A 600V IEC 41A 1000V PITCH: 8.0 mm 2. Insulation Withstand Voltage: AC 2000V for 1 minute 3. Insulation Resistance: Min 500MH at DC500V 4. Usable Temperature Range: — 40°C~ + 105“ C 5. RoHS compliant 6. Pole size and P/N refer to table below: p D SS6N -02P D SS6N -03P D SS6N -04P ITEM


    OCR Scan     		PDF 500MH DC500V L94-V0 OE/1201 ON/1204
    DP45-BU

    Abstract: No abstract text available
    Text: METRIC (nn) [INCHES] DESIGN UNITS! “ M HSF ^ 1 i fir s t REVISION p in r pen rrim i DESCRPTIDN DATE BY. ECN ND. NOTES: 1. Rating: UL 600V 45A IEC 500V 41A 2. Insulation Withstand Voltage: AC 2000V for 1 minute 3. Insulation Resistance: 1 u i& B B -e in I Min 500MD, at DC1000V 59.0 4 SCREW 3 CONDUCTOR 5. Screw Torgue Value: 1.8 N -m (15.6lb —in) 2 WIRE CAGE 6. Suitable Electric Wire: 20 ~ 8 AWG 1 HOUSING 4. Usable


    OCR Scan     		PDF 500MD, DC1000V DP45-GY DP45-BU DP45-LK DP45-GY/DP45-BU/I] P45-L OE/1201 OJ/1208 ON/1204 DP45-BU
    1998 - 2n7389

    Abstract: IRF P CHANNEL MOSFET 10a IRF P CHANNEL MOSFET 10A 100V transistor IRF 630 IRHF9130 IRHF93130 JANSF2N7389 JANSR2N7389
    Text: VGS = -12V, ID = - 4.1A VGS = -12V, ID = -6.5A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = - 4.1A VDS , =0V VGS = -12V, ID =- 4.1A V TC = 25°C, IS = -6.5A,VGS = 0V V nA 1011 Rads (Si)/sec 1012 , Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) 400 ID -2.9A - 4.1A BOTTOM


    Original     		PDF PD-90882 IRHF9130 IRHF93130 JANSR2N7389 JANSF2N7389 MIL-PRF-19500/630] 2n7389 IRF P CHANNEL MOSFET 10a IRF P CHANNEL MOSFET 10A 100V transistor IRF 630 IRHF9130 IRHF93130 JANSF2N7389 JANSR2N7389
    1998 - pd908

    Abstract: No abstract text available
    Text: -1.0mA Reference to 25°C, ID = -1.0mA VGS = -12V, ID = - 4.1A VGS = -12V, ID = -6.5A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = - 4.1A VDS= 0.8 x Max Rating,VGS=0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125 , Max Rating, VGS=0V VGS = -12V, ID =- 4.1A TC = 25°C, IS = -6.5A,VGS = 0V Drain-to-Source Breakdown , VD D A D R IV E R ID -2.9A - 4.1A BOTTOM -6.5A TOP tp 0.0 1 300 200 15V Fig 12a


    Original     		PDF PD-90881A IRHE9130 IRHE93130 S90245, pd908
    2002 - ISO7637

    Abstract: VNQ05XSP16 POWERSO-16TM
    Text: On state resistance IOUT 1,2,3, 4=1A ; Tj=25°C IOUT 1,2,3, 4=1A ; Tj=150°C Max 36 5.5 48 100


    Original     		PDF VNQ05XSP16 VNQ05XSP16 ISO7637 POWERSO-16TM
    2001 - VNQ05XSP16

    Abstract: POWERSO-16TM
    Text: 42 Max 36 5.5 48 100 190 330 80 10 0 50 Unit V V V m m m µA mA µA IOUT 1,2,3, 4=1A ; Tj=25°C IOUT 1,2,3, 4=1A ; Tj=150 °C IOUT 1,2,3,4=0.5A; VCC=6V Off state; Inputs=n.c.; VCC=13V On state; VIN=5V; VCC


    Original     		PDF VNQ05XSP16 VNQ05XSP16 POWERSO-16TM
    Not Available

    Abstract: No abstract text available
    Text: entretoise 6 mm-9 mm 41Â ¥r~ fur RSH 1.9 for RSH 1.9 pour RSH 1,9 fur RSH 1,9 for RSH 1.9 pour RSH


    OCR Scan     		PDF D-50968
    pht 094

    Abstract: 202X ERTD
    Text: »10 fool firf toad -« 41 «* (Note) Tests for withstand voltage, charging/discharging cycle, humidity


    OCR Scan     		PDF 20rrtrrt MR1023C 1060m pht 094 202X ERTD
    1996 - 2N6849

    Abstract: W41A
    Text: 10 W , ID ^ ­4.1 A, VGEN = ­10 V, RG = 7.5 W 41A 10 V 75 tf ns Source-Drain Diode


    Original     		PDF 2N6849 MIL-S-19500/564 O-205AF P-37010--Rev. 06-Jun-94 2N6849 W41A
    Not Available

    Abstract: No abstract text available
    Text: C ATI O N S Input voltage 10 to 30 VDC 20 to 60 VDC 30 to 90 VDC Input current 4.1A


    Original     		PDF PD65-10 PD65-13 PD65-23 PD65-25 PD65-30 PD65-32 PD65-39 PD65-40 PD65-12 PD65-14
    pd6523

    Abstract: PD65-31MC 30-90VDC
    Text: PD65 "M" series 30 to 90VDC PD65 "H" series 4.1A for 24VDC 2.1A for 48VDC 1.5A for 72VDC EN V IR


    Original     		PDF 10-30VDC, 20-60VDC 30-90VDC, 30-90VDC PD65-10 PD65-13 PD65-12 PD65-14 pd6523 PD65-31MC 30-90VDC
    1995 - 2N6849

    Abstract: No abstract text available
    Text: = 10 W 50 V, ID ^ -4.1 A, VGEN = -10 V RG = 7 5 W 41A 10 V, 7.5 tf ns SourceDrain


    Original     		PDF 2N6849 MILS19500/564 O205AF P37010Rev. 2N6849
    marking WR6

    Abstract: 43AF-6 SIO129 TMPZ84C40 TMPZ84C43AF-6 42AP-8 IN SDLC PROTOCOL ssop40 TMPZ84C40AM-6 TMPZ84C44AT-6
    Text: TOSHIBA TMPZ84C40A/ 41A /42A/43 A/44A TMPZ84C40AP-6 / 41AP-6 / 42AP-6 / 43AF-6 / 44AT-6 , PZ84C40 A/41 A/42 A (Top View) 100489 (c) SIO/2 MPUZ80-225 TOSHIBA TMPZ84C40A/ 41A /42A/43 A/44A , -228 TOSHIBA TMPZ84C40A/ 41A /42A/43 A/44A 2.2 PIN NAMES AND FUNCTIONS Table 2.2 Pin Names and Functions (1/2 , versions (SIO/O, SIO/1, SIO/2). MPUZ80-230 TOSHIBA TMPZ84C40A/ 41A /42A/43 A/44A 3. FUNCTIONAL , . MPUZ80-233 TOSHIBA TMPZ84C40A/ 41A /42A/43 A/44A The receiver operation starts from the hunt phase. In


    OCR Scan     		PDF TMPZ84C40A/41A/42A/43 TMPZ84C40AP-6 41AP-6 42AP-6 43AF-6 44AT-6 TMPZ84C40AM-6 41AM-6 42AM-6 TMPZ84C40AP-8 marking WR6 SIO129 TMPZ84C40 TMPZ84C43AF-6 42AP-8 IN SDLC PROTOCOL ssop40 TMPZ84C44AT-6
    ...

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