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pinout 80386

Abstract: 80486 circuit IOAIO 80486 pinout diagram WD602 WD6500
Text: 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 - NAME , I 3, 24, 35, 46,57, 83, 100, 116 17, 18, 27, 32, 38, 43, 50 ,51, 60,65, 76, 87, 98, 109, 117, 132 , 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 - NAME D9 V dd PIN 67 68 69 , , 46,57, 83, 100, 116 17, 18, 27, 32, 38, 43, 50 ,51, 60, 65, 76, 87, 98, 109, 117, 132 V dd I , BUFFER MODE (MODE = 0) EOT, CL CL CL CL 50 120 120 240 - UNITS PF PF PF PF BE(0:3), M/IO* PA|2:31


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PDF WD6022 WD6500 WD6022 132-Lead 32-bit -l100, pinout 80386 80486 circuit IOAIO 80486 pinout diagram WD602
80386 microprocessor functional block diagram

Abstract: block diagram of 80386 microprocessor intel 80386 motherboard, IOAIO intel 80386 block diagram pinout 80386 intel 80386 pin diagram 80386 microprocessor block diagram and pin diagram FE6500 EPROM 27010
Text: Vss A8 PIN 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 , Vss D4 D5 D6 D7 Vss D8 PIN 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 , Supply 66 MODE I 3, 24, 35, 46,57, 83, 100, 116 17, 18, 27, 32, 38, 43, 50 . 51, 60, 65, 76 , , 38, 43, 50 , 51, 60, 65, 76, 87, 98, 109, 117, 132 68, 69, 70, 71, 72, 73, 74, 75, 77, 78, 79, 80, 81 , CL CL MIN 50 120 120 240 MAX UNITS pF pF pF pF FE6022 ADDRESS BUFFER MODE (MODE = 0) FE6022


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PDF FE6022 132-Lead FE6500 70/80-compatible 7S40i' 80386 microprocessor functional block diagram block diagram of 80386 microprocessor intel 80386 motherboard, IOAIO intel 80386 block diagram pinout 80386 intel 80386 pin diagram 80386 microprocessor block diagram and pin diagram EPROM 27010
1998 - MBE3-50

Abstract: MBE301 TOKO 113kn if transformer
Text: .13 fi = 50 MHz; note 1 fi = 180 MHz; note 1 fi = 50 MHz fi = 180 MHz see Fig.7 fi = 50 to 180 MHz 1% cross modulation in channel; RL = 75 ; fi = 50 MHz; see Fig.5 1% cross modulation in channel; RL = 75 , 180 MHz; note 2 RL = 75 ; fi = 50 MHz; see Fig.3 RL = 75 ; fi = 180 MHz; see Fig.3 Band A oscillator , signal LO signal harmonics with respect to LO signal see Fig.11 see Fig.11 RL = 50 RL = 50 ; note 8 - - , RL = 50 - - -10 dB 1. These measurements were made with an input circuit for optimum


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PDF TDA5637 MBE3-50 MBE301 TOKO 113kn if transformer
boxcar

Abstract: No abstract text available
Text: 53 52 51 50 49 48 47 46 A4 C VCC Q A5 C As C gnoQ =4 JC , I] O N 0 C 2 °i C o « 'c S°C , (VOUT< 0 V ) - 50 mA + 50 mA v c c i f applicable) DC Output Current per Output Pin. +70 mA -3 , . Measured at a frequency of < 10 MHz with 50 % duty cycle. Unused inputs are at V cc or GND. Calculation of , Select to LEO Hold LEI to LEO Setup LEI to LEO Hold LEI, LEO Pulse Width HIGH CL - 50 pF R, - 500 Ohms R , *PHL PLH PHL PLH PHL PLH PHL PZH PZL PHZ PLZ CL - 50 pF R, « 500 Ohms R2 - 500 Ohms


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PDF Am29C983/Am29C983A sy9C983A 9485-007A 09485-008B 09485-009B 9485-011A 09485-012B boxcar
circuit diagram for cd 6283 12 PIN

Abstract: ic cd 6283 diagram am29c983
Text: ) Storage Temperature -5 0 mA + 50 mA Commercial (C) Devices 0 to +70°C +4.5 to +5.5 V , short-circuit test not to exceed 100 milliseconds. M easured at a frequency of < 10 M H z with 50 % duty cycle , Port 5 18 4 20 ns 5 *PLH 6 *PHL LEO - HIGH 7 5 CL - 50 pF R, = , 10 *P ZL CL - 50 pF R, = 500 Ohms R2 = 500 Ohms 11 PZ H Output Disable Time 12


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PDF Am29C983/Am29C983A 09485-008B 09485-009B 9485-011A 09485-012B circuit diagram for cd 6283 12 PIN ic cd 6283 diagram am29c983
VL82C486

Abstract: vl82c486fc 62C54 I/Phoenix BIOS VL82C486 bios
Text: VDD MA10 107 ZD MA9 106 ZJ MA8 105 ZJ MA7 49 50 51 52 S' f i i ) < o s < o o ) Q T - p j , 17 D31 IO TTL 8 49 D2 IO TTL 8 18 D30 IO TTL 8 50 D1 , nominal 50 % duty cycle and normally has a frequency of 16 MHz. It is used for ISA bus operations. If an


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PDF VL82C486 SC486â 486-based 82C37A 74LS612 82C59A 82C54 VL82C486 vl82c486fc 62C54 I/Phoenix BIOS VL82C486 bios
2005 - WATKINS JOHNSON mixer

Abstract: vari-l 1785 TETRA etch BD256 magnum microwave Magnum Microwave mixer WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Text: ) Custom specifications available s Q range 400 - 2,000 s Impedance 50 and 75 s Temperature , 1200 s Impedance 50 and 75 s Temperature stability ±5 ppm/°C s Temperature range -30°C to +85°C , www.specwave.com/base s Passbands DC to 20 GHz s Rejections DC to 50 GHz s Passbands DC to 26 GHz s , 27 mm x 27 mm x 6 mm · 37 mm x 37 mm x 4 mm · 50 mm x 50 mm x 3 mm Designed for optimal , range stretches from the low end of the frequency spectrum up to 50 GHz. Spectrum Microwave applies


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KNC 201 15

Abstract: K1503 hp 1502 vga knc 201 39 CD 1517 intergrated circuit 82C452 KNC 201 82C322 LIM EMS 4.0 82C631
Text: terminate the cycle. 5.0 MATCHED MEMORY CYCLES Matched Memory Cycles are allowed only for 16 or 32 bit


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PDF CHIPS/280 33-MHZ* 33Mhz CPI022 CPIQ22 82C226 100-Pin KNC 201 15 K1503 hp 1502 vga knc 201 39 CD 1517 intergrated circuit 82C452 KNC 201 82C322 LIM EMS 4.0 82C631
1999 - PLB CONNECTOR

Abstract: CPC700 interface 740 IBM F801 F880 flk101 TA 7217 AP 25CPC700 OPB 814
Text: Figure 46. Figure 47. Figure 48. Figure 49. Figure 50 . Figure 51. Figure 52. Figure 53. Figure 54 , 's Manual-Preliminary xiii Tables Table 47. Table 48. Table 49. Table 50 . Table 51. Table 52. Table 53


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PDF CPC700 PLB CONNECTOR CPC700 interface 740 IBM F801 F880 flk101 TA 7217 AP 25CPC700 OPB 814
1999 - 16550 16 byte buffer

Abstract: How to convert 4-20 ma two wire transmitter modem 56k sram CPC700 F801 F880
Text: . Figure 49. Figure 50 . Figure 51. Figure 52. Figure 53. Figure 54. Figure 55. Figure 56. Figure 57


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PDF CPC700 16550 16 byte buffer How to convert 4-20 ma two wire transmitter modem 56k sram CPC700 F801 F880
2002 - stm 8309

Abstract: ARM10TDMI ARM9TDMI power supply SAMSUNG MONITOR str 8309 ARM v7 XXAB 21-S3-C2501X-122002 comparison between core performance of ARM7TDMI comparison between ARM7TDMI and ARM10TDMI
Text: No file text available


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PDF S3C2501X 32-BIT S3C2501X 272-pin 272-BGA-2727-AN) 272-BGA-2727-AN 272-BGA-2727-AN stm 8309 ARM10TDMI ARM9TDMI power supply SAMSUNG MONITOR str 8309 ARM v7 XXAB 21-S3-C2501X-122002 comparison between core performance of ARM7TDMI comparison between ARM7TDMI and ARM10TDMI
2002 - BRX71-03...-50

Abstract: 50/1N6400 50/KBA500 CGS+HSA+50
Text: IMPED. IN/OUT (Ohms) 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50 / 50 50


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A/2Y0A21 F 73

Abstract: No abstract text available
Text: 7.3 73 7.3 7.3 7.3 7.3 7.3 10.0 10.0 10.0 10 0 to o 10 0 H 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 5.0 5.0 5.0 50 5.5 5.5 5.5 65 6.5 7.0 8.0 8.0 8.0 9.5 9.5 95 , .3.5 4.0 4.3 4.3 4.8 5.0 5.5 5.8 65 65 75 5 6.5 6.5 7.0 7.0 8.0 P 5.0 5.0 5.0 5.0 5.0 50 50 5.0 50 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 50 5.0 5.0 5.0 50 50 0 0 75 75 75 7.5 7.5 7.5 F 5.0 5.0 5.0 5.0 50 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


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PDF 103to335F-5 A/2Y0A21 F 73
2002 - mt3514

Abstract: mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 100 200 300 600 900 1200 0.8 0.8 0.8 0.8 0.8 0.8 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 , 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


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PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
2002 - diode Marking H27

Abstract: 50/Y496
Text: Temperature Coefficient z (%/ C) 50 Zener Voltage Temperature Coefficient z (mV/ C) 500 5mm 2.5 mm , ­0.06 ­0.08 ­0.10 0 5 200 100 ­ 50 10 15 20 25 30 35 40 Zener Voltage VZ (V) 0 0 50 100 150 , 4.4 TEST CURRENT I ZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Dynamic Resistance rd (Max) OHMS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 IZ mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


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PDF J-STD-020C diode Marking H27 50/Y496
2002 - Not Available

Abstract: No abstract text available
Text: 0.10 Zener Voltage Temperature Coefficient z (%/ C) 50 40 30 20 mV/ C 10 0 ­10 ­20 ­30 ­40 0 5 ­ 50 , ­0.10 200 100 0 0 50 100 150 Ambient Temperature Ta ( C) 200 Fig.2 Temperature Coefficient , 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 TEST CURRENT I ZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Dynamic Resistance rd (Max) OHMS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 IZ mA 5.0 5.0


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PDF LSH36 LSH16 LSH30 LSH12 LSH20 LSH24
2002 - Zener diode MARKING H5

Abstract: No abstract text available
Text: Temperature Coefficient z (%/ C) 50 Zener Voltage Temperature Coefficient z (mV/ C) 500 5mm 2.5 mm , ­0.06 ­0.08 ­0.10 0 5 200 100 ­ 50 10 15 20 25 30 35 40 Zener Voltage VZ (V) 0 0 50 100 150 , CURRENT I ZT mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 Dynamic Resistance rd (Max) OHMS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 IZ mA 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0


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2003 - mb101

Abstract: No abstract text available
Text: Maximum Forward Voltage @ 25°C TL* IFM A VFM V Package Through Hole Bridge Rectifiers MB05M 50 40 MB1M 100 40 MB2M 200 40 MB4M 400 0.5 40 MB6M 600 40 MB8M 800 40 MB10M 1000 40 DB101 50 40 DB102 100 40 DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 HDB103G 200 40 HDB104G 400 40 HDB105G 600 40 HDB106G 800 40 HDB107G 1000 40 RB151 50 25 RB152 100 25 RB153 200 25 RB154 400 25 RB155 600 25 RB156 800 25 RB157 1000 25 W005G 50 50 W01G 100 50 W02G 200 50 1.5


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PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101
UF107

Abstract: UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207
Text: Package time V A °C A µA A V HER101 50 1.0 50 30 5.0 1.0 1.0 50 DO-41 HER102 100 1.0 50 30 5.0 1.0 1.0 50 DO-41 HER103 200 1.0 50 30 5.0 1.0 1.3 50 DO-41 HER104 300 1.0 50 30 5.0 1.0 1.3 50 DO-41 HER105 400 1.0 50 30 5.0 1.0 1.3 50 DO-41 HER106 600 1.0 50 30 5.0 1.0 1.85 70 DO-41 HER107 800 1.0 50 30


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PDF HER101 DO-41 HER102 HER103 HER104 HER10 D0-41 UF107 UF302 diode UF103 UF303 UF307 DIODE HER306 APPLICATION DIODE HER306 DO27 diode her205 UF207
2007 - am1580

Abstract: AU-1433 AM-1358 AU-1467 AM-1607-3000 AU-1350 microwave product catalog AM-1610 AM-1616 AM-1607-2000
Text: amplifiers must be terminated in 50 ohms at all times. SECOND AND THIRD ORDER INTERCEPT POINTS The third , Humidity .Up to 95% at 40° noncondensing Vibration.1.0 ­ 3.0 g's rms, 5 Hz ­ 50 kHz random, basic , duration pulses up to 50 W. AC POWER SUPPLY (100 to 240 VAC, 47 ­ 440 Hz). Add Suffix "-1179" Available as , (in degrees Kelvin) of a 50 termination at the input of an ideal noiseless amplifier with the same , microwave systems are designed around a 50 impedance system. An amplifier's impedance is designed to be as


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2004 - BC548 BH

Abstract: BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
Text: CMPT3904E CMPT4401 80 75 80 40 6.0 6.0 6.0 6.0 6.0 6.0 100 10 10 50 * 50 * 100* 80 60 60 30 30 35 100 100 100 , 5.0 10 10 1.0 1.0 1.0 150 1.0 150 150 10 0.4 1.0 100 500 500 50 50 500 6.0 8.0 8.0 4.0 4.0 6.5 150 300 300 300 300 250 4.0 4.0 5.0 4.0 285 285 250 250 255 100 60 60 60 45 40 40 40 0.5 0.3 , 5.0 5.0 5.0 5.0 100 10 10 50 * 50 * 100* 80 50 50 30 30 35 100 100 100 100 100 100 300 300 300 300 300 300 5.0 10 10 1.0 1.0 2.0 1.0 150 150 10 10 150 0.4 1.6 100 500 500 50 50 500 4.5 8.0 8.0 4.5 4.0 8.5


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PDF OT-23 350mW CMPT8099 CMPT2222A CMPT2222AE CMPT3904 CMPT3904E CMPT4401 BC548 BH BC547 NPN Transistor BC547B npn bc338 signal transistor transistor MPSA77 BC546B SOT23 transistor low noise pnp
2002 - Not Available

Abstract: No abstract text available
Text: ±0.25 pF /±2% /±2% ±2% /±2% 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5 6.5 7.5 8.5 11.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5 7.5 7.5 8.5 , Product information 5.0 5.0 5.0 5.0 5.0 6.5 7.5 8.5 10.0 11.0 12.0 ±0.25 pF ±0.25 pF /±2% /±2% /±2% 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5 7.5 8.5 10.0 12.0 ±0.25 pF /±2% 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 6.5


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PDF N1500
2003 - Not Available

Abstract: No abstract text available
Text: Hole High Efficient Rectifiers HER101S 50 55 HER102S 100 55 HER103S 200 55 HER104S 300 55 HER105S 400 55 HER106S 600 55 HER107S 800 55 HER108S 1000 55 EGP10A 50 55 EGP10B 100 55 EGP10D 200 55 1.0 EGP10F 300 55 EGP10G 400 55 EGP10J 600 55 EGP10K 800 55 HER101 50 55 HER102 100 55 HER103 200 55 HER104 300 55 HER105 400 55 HER106 600 55 HER107 800 55 HER151 50 55 HER152 100 55 HER153 200 55 HER154 300 55 1.5 HER155 400 55 HER156 600 55 HER157 800 55 HER158 1000 55 EGP20A 50 55 EGP20B 100 55 EGP20D 200 55


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PDF HER101S HER102S HER103S HER104S HER105S HER106S HER107S HER108S EGP10A EGP10B
2000 - TZX27B

Abstract: TZX20C TZX10 TZX10A TZX10B TZX10C TZX10D TZX11 TZX36C
Text: ) Max (V) mA W mA V TZX2V4 2.3 2.6 5.0 100 5.0 0.5 TZX2V4A 2.3 2.5 5.0 100 5.0 0.5 TZX2V4B 2.4 2.6 5.0 100 5.0 0.5 TZX2V7 2.5 2.9 5.0 100 5.0 0.5 TZX2V7A 2.5 2.7 5.0 100 5.0 0.5 TZX2V7B 2.6 2.8 5.0 100 5.0 0.5 TZX2V7C 2.7 2.9 5.0 100 5.0 0.5 TZX3V0 2.8 3.2 5.0 100 5.0 0.5 TZX3V0A 2.8 3.0 5.0 100 5.0 0.5 TZX3V0B 2.9


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PDF TZX36C 500mW DO-35, MIL-STD-202, DO-35 TZX30B TZX30C TZX33 TZX33A TZX27B TZX20C TZX10 TZX10A TZX10B TZX10C TZX10D TZX11 TZX36C
equivalent components of diode her207

Abstract: her158 HER1605PT her1603g HER107 HER106 HER105 HER104 HER103 her308
Text: VPK Trr ns 25 25 25 25 25 25 25 25 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.3 1.3 1.7 1.7 1.7 50 50 50 50 50 75 75 75 30 30 30 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.3 1.3 1.7 1.7 1.7 50 50 50 50 50 75 75 75 30 , 1.7 1.7 50 50 50 50 100 100 30 30 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 5.0


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PDF 0ER1602PT HER1603PT HER1604PT HER1605PT HER1606PT HER1607PT HER1608PT ITO-220 UF1600F UF1601F equivalent components of diode her207 her158 HER1605PT her1603g HER107 HER106 HER105 HER104 HER103 her308
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