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MB84VA2000

Abstract: F9805
Text: CMOS 8M (× 8) FLASH MEMORY & 2M (× 8) STATIC RAM MB84VA2000- 10 / MB84VA2001-10 s FEATURES · Power , are trademarks of Advanced Micro Devices, Inc. MB84VA2000- 10 / MB84VA2001-10 s BLOCK DIAGRAM , VSS A0 to A17 WE OE CE1s CE2s 2 2 M bit Static RAM MB84VA2000- 10 / MB84VA2001-10 s , / MB84VA2001-10 s PRODUCT LINE UP Flash Memory Ordering Part No. VCC = 3.0 V +0.6 V ­0.3 V SRAM MB84VA2000- 10 / MB84VA2001-10 Max. Address Access Time (ns) 100 100 Max. CE Access Time (ns) 100


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PDF DS05-50101-2E MB84VA2000-10/MB84VA2001-10 MB84VA2000: MB84VA2001: F9805 MB84VA2000 F9805
MB84VA2000

Abstract: No abstract text available
Text: / MB84VA2001-10 s FEATURES · Power supply voltage of 2.7 to 3.6 V · High performance 100 ns maximum access , / MB84VA2001-10 s BLOCK DIAGRAM VCCf VSS A0 to A19 RY/BY A0 to A19 8 M bit Flash Memory , To Top / Lineup / Index MB84VA2000- 10 / MB84VA2001-10 s PIN ASSIGNMENTS (Top View) A B C , Supply (SRAM) Power 3 To Top / Lineup / Index MB84VA2000- 10 / MB84VA2001-10 s PRODUCT LINE UP Flash Memory Ordering Part No. VCC = 3.0 V +0.6 V ­0.3 V SRAM MB84VA2000- 10 / MB84VA2001-10


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PDF DS05-50101-2E MB84VA2000-10/MB84VA2001-10 MB84VA2000: MB84VA2001: F9805 MB84VA2000
Not Available

Abstract: No abstract text available
Text: , Inc. MB84VA2000-1o/ MB84VA2001 - 10 ■BLOCK DIAGRAM V ccf 2 Vss M B84 VA2000-1o/M B84 , – PRODUCT LINE UP Flash Memory Ordering Part No. SRAM MB84VA2000- 10 / MB84VA2001 - 10 Vcc = 3.0 V ^ , SRAM CMOS 8M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM MB84VA2000-1o/M B84VA2001- 10 ■FEATURES , Architecture MB84VA2000: Top sector MB84VA2001 : Bottom sector • Embedded Erase™ Algorithms , 2 A l4 A l8 1 WE VccS 10 F G H 2 A4 CE2s Ag 3 A? RY


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PDF DS05-50101-2E MB84VA2000-1o/M B84VA2001-10 MB84VA2000: MB84VA2001: B84VA2000-1o/M VA2001-1 48P-M MCM-M001-2-3
Not Available

Abstract: No abstract text available
Text: EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. MB84VA2000- 10 / MB84VA2001 , MB84VA2000- 10 / MB84VA2001 - 10 100 100 40 100 100 50 Max. Address Access Time (ns) Max. Ü E Access Time (ns , / MB84VA2001 10 AC CHARACTERISTICS · C E Timing Parameter Symbols JEDEC Description Standard tcCR ÜE Recover , -1o/ MB84VA2001 - 10 · W rite Cycle (W E control) (Flash) 16 M B84 VA2000-1o/M B84 V A 2001-1 o Write , VA2000-1o/MB84 VA2001 - 10 FEATURES · Power supply voltage of 2.7 to 3.6 V · High performance 100 ns


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PDF VA2000-1o/MB84 VA2001 MB84VA2000: MB84VA2001: F9805
1998 - MBM29F033

Abstract: 5v eeprom Memory 32Mbit PCMCIA SRAM Memory Card 512k 1M - FLASH PCMCIA linear card MB98A81183-15 2M - FLASH PCMCIA linear card AMD PCMCIA linear Flash Memory Card fujitsu Flash Memory Miniature Card cdx3 electronique
Text: Part Number Feature Boot Block Flash MB84VA2000- 10 MB84VA2001-10 MB84VA2002- 10 MB84VA2003- 10 MB84VD2002- 10 MB84VD2003- 10 MB84VA2004- 10 MB84VA2005- 10 MB84VA2006- 10 MB84VA2007- 10 MB84VD2008- 10 MB84VD2009- 10 MB84VA2100- 10 MB84VA2101- 10 MB84VA2102- 10 MB84VA2103- 10 MB84VA2104- 10 MB84VA2105- 10 MB84VA2106- 10 MB84VA2107- 10 MB84VA2108- 10 MB84VA2109- 10 Dual Op Dual Op Dual Op Dual Op Top Bottom Top Bottom Top Bottom Top Bottom Top Bottom Top , Europe 1 2-3 4 5 6 7 8 8 9 10 11 12 12 13 Back cover Introduction Fujitsu and Flash Memory Flash


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PDF D-85737 S-19268 FEDE-FLASH-0998 MBM29F033 5v eeprom Memory 32Mbit PCMCIA SRAM Memory Card 512k 1M - FLASH PCMCIA linear card MB98A81183-15 2M - FLASH PCMCIA linear card AMD PCMCIA linear Flash Memory Card fujitsu Flash Memory Miniature Card cdx3 electronique
1998 - 3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram mb814400a-70 MB81G83222-008 4464 ram
Text: /512k ×16 1M × 8/512k ×16 Bottom Boot Type MB84VA2001 SRAM 128k × 8 100 ns MB84VA2007 , 256k × 8 100 ns MB84VA2003 Flash Memory 1M × 8/512k ×16 MB84VA2000 MB84VA2001 256k × , -bit bus MB98C81013- 10 100 ns 8-bit or erasable in a single pass Sector 2MB 1MW 8Mb×2 16-bit bus MB98C81123- 10 100 ns 8-bit or erasable in a single pass Sector 4MB 2MW 16Mb×2 16-bit bus MB98C81233- 10 100 ns 8-bit or erasable in a single pass Sector 8MB 4MW 16Mb×4


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PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram mb814400a-70 MB81G83222-008 4464 ram
MSP14LV160

Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k MSP55LV128 HY27US08121B MSP55lv512 fujitsu msp55lv512
Text: /09B/ 10 /23 Series. Please acknowledge the content's of this list a previous notice's there and nor , code that has been set. A write error or read error may occur. 10 .Please retrieve the device name , of pins, etc.) and the fitting of the main body and units. 3.Programming error (error code : 10 , 13 , 10 [] Package Code


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PDF AF9708/09/09B/10/23 nearest09 AF9709B/09C AF9723 AF9708 TE004-44PL-04 AF9709 MSP14LV160 MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k MSP55LV128 HY27US08121B MSP55lv512 fujitsu msp55lv512
2002 - mt3514

Abstract: mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB , 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / WOB B40C1000 B80C1000 B125C1000 B250C1000 B380C1000 B500C1000 100 200 300 600 900 1200 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


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PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
2003 - GFM 64A

Abstract: GDV 64A GFM 85A 625 GFG 79mcc GHR 26A tvs SMC MARKING 33 TVS SMC GFM 57, TVS GFM 15A
Text: 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 , 37 38 34 35 32 33 29 30 27 28 25 26 23 24 21 22 18 19 17 18 15 16 14 14.5 12.5 13 11.5 12 10 11 9.0 , 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 1.0 1.0 1.0


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PDF DO-41 P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 GFM 64A GDV 64A GFM 85A 625 GFG 79mcc GHR 26A tvs SMC MARKING 33 TVS SMC GFM 57, TVS GFM 15A
2003 - mb101

Abstract: No abstract text available
Text: DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 , 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.0 1.0 1.0 1.3 1.7 1.7 1.7 1.0 1.0


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PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101
2011 - Not Available

Abstract: No abstract text available
Text: -8 RG1676-9 RG1676- 10 RG1676-11 RG1676-12 RG1676-13 RG1676-14 RG1676-15 RG1676-16 RG1676-17 RG1676 , ® RESISTANCE TOLERANCE OHMS % 100 100 10 220 220 100 100 100 220 220 220 220 220 220 220 220 100 220 220 100 10 220 220 220 220 47 47 47 200 100 22 100 50 220 220 220 100 50 50 15 33 15 47 100 220 10 220 100 100 470 220 22 75 47 10 50 100 220 220 220 68 220 50 220 10 820 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10


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PDF RG1676 RG1676 RG1676-1 RG1676-2 RG1676-3 RG1676-4 RG1676-5 RG1676-6 RG1676-7 RG1676-8
2000 - SR1K-2

Abstract: SR1K2 capacitor K460 SR2S14 Z5U Metal Oxide Varistor 155Z sr2k20
Text: CECC 42 000 203 10 /00 SIOV Metal Oxide Varistors HICAP Maximum ratings (TA = 85 °C) Type , 23/­ 0 + 23/­ 0 + 23/­ 0 Max. clamping voltage v i V A 40 5,0 40 10 ,0 40 5,0 40 5,0 40 10 ,0 40 10 ,0 40 10 ,0 58 58 58 58 58 58 58 5,0 10 ,0 5,0 5,0 5,0 10 ,0 10 ,0 C ± 20% Derating V /I , 275 274 274 274 275 275 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 New ordering codes implemented (refer to chapter Varistor Type Cross-Reference List) 1) at 0,5 V 204 10 /00 SIOV Metal Oxide


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2010 - CL10B105KA8NNN

Abstract: CL31A106KOHNNN CL05B224KQ5NNN
Text: 1.25±0.10 2.00±0.15 2.00±0.20 1.25±0.15 1.25±0.20 5 5 8 C F Q 0.2+0.15/-0.1 10 , High Capacitance Table (X5R) Capacitance (uF) Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 47 , ) 6.3 0402(1005) 0.3 1 2.2 4.7 10 22 33 47 X6S 10 Part Numbering


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PDF CL31F226ZPHNNN CL31F226ZQHNNN CL32F106ZAHLNN CL32F106ZOELNN CL32F226ZPJNNN CL32F226ZPULNN CL32F476ZQJNNN CL32F107ZQJNNN CL10B105KA8NNN CL31A106KOHNNN CL05B224KQ5NNN
2005 - SMAJ15CA

Abstract: SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C
Text: with a 10 /1000µs waveform * Optimized for LAN protection applications * Low clamping * Very fast , 150 °C Peak Pulse Current on 10 /1000µs waveform (Note 1, Fig. 1) Operating Junction and , . IT (mA) VWM (V) Maximum Reverse Leakage @ VWM IR (µA) SMAJ5.0C 6.40 7.82 10 5.0 1600 41.7 SMAJ5.0CA 6.40 7.25 10 5.0 1600 43.5 9.2 SMAJ6.0C 6.67 8.15 10 6.0 1600 35.1 11.4 SMAJ6.0CA 6.67 7.37 10 6.0 1600


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PDF 188CA DO-214AC) UL94V-O SMAJ78CA SMAJ85A SMAJ188CA SMAJ15CA SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C
2005 - SMCJ10C

Abstract: SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C
Text: * * * * * 0.305(7.75) 0.030(0.76) * 1500W peak pulse power capability with a 10 /1000µs waveform , unless otherwise specified. Rating Symbol Peak Pulse Power Dissipation on 10 /1000ms waveform Peak Pulse Current on 10 /1000µs waveform (1) (2) (1) Typical thermal resistance , Junction to , (V) Maximum Reverse Leakage @ VWM IR (µA) SMCJ5.0C 6.40 7.82 10 5.0 2000 156.3 SMCJ5.0CA 6.40 7.25 10 5.0 2000 163.0 9.2 SMCJ6.0C 6.67 8.15


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PDF 188CA DO-214AB) UL94V-O SMCJ10C SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C
TO-32-070

Abstract: 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
Text: 50 50 50 50 50 50 50 50 50 Vebo (V) 10 10 10 10 10 10 6 6 10 10 10 10 5 6 5 5 10 6 6 6 6 5 5 5 5 6 6 6 10 10 10 10 5 6 (mA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 500 , 250 250 250 250 250 250 200 250 200 250 200 250 200 250 Vce (V) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 0 10 1 0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Ic te (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5


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PDF T0220ML TO-32-070 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
2004 - BCR141

Abstract: BCR141F BCR141L3 BCR141S BCR141T
Text: 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 Collector current , = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off , Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz , 10 2 10 3 - 10 2 IC h FE mA 10 1 10 1 10 0 -1 10 10 0 10 1


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PDF BCR141. BCR141/F/L3 BCR141T/W BCR141S/U EHA07184 EHA07174 BCR141 BCR141F BCR141L3 BCR141S BCR141 BCR141F BCR141L3 BCR141S BCR141T
1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 1N34A 1N46 IN73 1N120
Text: 75 125 50 55 25 70 23 23 90 100 75 60 75 75 75 100 90 100 100 100 100 100 125 20 25 10 1,0 1.0 1.0 1.0 1.0 5 5 7.5 4 3 50 30 10 100 6 10 10 10 25 3 1.0 1.0 1.5 1.5 1.0 5 25 12.7 12.8 3 5 6 35 1000 3 3 10 iö 1.0 1.0 1.0 1.0 1.0 410 1500 500 800 200 50 50 100 50 20 1.0 1.0 1.0 1.0 1.0 5 2.5 5 25 5 80 1500 150 100 10 20 50 50 50 10 1.0 1.0 1.0 1.0 1.0 5 5 4 5 15 7 800 500 500 300 10 iso 150 150 30 1.0 l.Q 1.0 1.0 1.0 15 3.6 4 5 5 300 300 500 800 600 30 75 75 100


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PDF 1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 1N34A 1N46 IN73 1N120
SMBJ15A

Abstract: SMBJ120A SMBJ28A SMBJ12A SMBJ6.5A SMBJ64A SMBJ100A SMBJ58A SMBJ17A SMBJ170A
Text: Power : 600 W FEATURES : * 600W peak pulse power capability with a 10 /1000µs waveform * Excellent , Peak Pulse Power Dissipation on 10 /1000μs waveform Peak Pulse Current on 10 /1000μs waveform (1 , 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 , 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 62.5 65.2


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PDF TH97/2478 TH09/2479 TH07/1033 DO-214AA) UL94V-0 10/1000ms. SMBJ15A SMBJ120A SMBJ28A SMBJ12A SMBJ6.5A SMBJ64A SMBJ100A SMBJ58A SMBJ17A SMBJ170A
2003 - BAS170W

Abstract: BAS70-04S marking 74s BAS70-02W BAS70-02L BAS70 BAS70-04T Puls BAS70-05 BAS70-05W
Text: - 0.1 µA DC Characteristics Breakdown voltage V(BR) I(BR) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA , rf - 34 - - - 100 ps Forward voltage matching1) VF IF = 10 mA AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz , = f = 10 kHz BAS 70W/BAS 170W 2.0 CT f = 1MHz (VR) EHB00044 pF (IF


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PDF BAS70. BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W BAS70-04S BAS170W BAS70-04S marking 74s BAS70-02W BAS70-02L BAS70 BAS70-04T Puls BAS70-05 BAS70-05W
2003 - Not Available

Abstract: No abstract text available
Text: ) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA 600 705 750 IF = 15 mA 750 880 1000 - - 20 , )  IF = 10 mA VF AC Characteristics Diode capacitance pF VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz Charge carrier life time  IF = 25 mA 1 rr VF is the , . / BAS170W Forward resistance rf = f = 10 kHz BAS 70W/BAS 170W 2.0 CT  f = 1MHz (VR


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PDF BAS70. BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W BAS70-04S
2006 - BGY 602

Abstract: BD 882 KD 605 447 gev BD 147 SMCJ12 SMCJ11A SMCJ11 BD 292 SMCJ10A
Text: capability with a 10 /1000us waveform, repetition rate (duty cycle): 0.01% Very fast response time High temperature soldering guaranteed: 250oC/ 10 seconds at terminals Mechanical Data Case: JEDEC DO-214AB(SMC , unless otherwise specified.) Parameter Symbol Peak pulse current with a 10 /1000us waveform (1) Unit P PPM Peak pulse power dissipation with a 10 /1000us waveform (1) (2) Value Minimum 1500 , . Max. Test current at IT (mA) SMCJ5.0 GDD BD D 6.40 7.82 10 5.0 1000


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PDF 440CA 10/1000us 250oC/10 DO-214AB MIL-STD-750, SMCJ300A SMCJ350A SMCJ400A SMCJ440A 300us BGY 602 BD 882 KD 605 447 gev BD 147 SMCJ12 SMCJ11A SMCJ11 BD 292 SMCJ10A
2012 - CL21B105K

Abstract: CL05A105K CL21B475K CL05A225 CL32B106K CL21B225K CL32A227MQVNNN CL32B226KAJ CL32A476KOJNNN CL10A476MR8NZN
Text: Size Code 05 10 EIA Code 0402 0603 L 1.00±0.05 1.60±0.10 1.60±0.10 2.00±0.10 2.00±0.10 2.00±0.10 , . High Capacitance Table (X5R) Capacitance () Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 15 47 100 220 High Capacitance Table_Low Profile (X5R) Size(mm) Tmax (mm) Capacitance () Vr(V) 6.3 0402(1005) 0.3 10 16 6.3 10 0603(1608) 0.5 16 25 10 0.7 16 25 0805(2012) 4 6.3 0.95


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2003 - BCR191

Abstract: BCR191F BCR191L3 BCR191S BCR191T BCR191W
Text: voltage VCBO 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 , - MHz Ccb - 3 - pF V(BR)CBO IC = 10 µA, IE = 0 Collector-base cutoff current VCB = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0,5 mA , Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V


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PDF BCR191. BCR191/F/L3 BCR191T/W BCR191S EHA07173 EHA07183 BCR191 BCR191F BCR191L3 BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W
WK2 94V0

Abstract: transistor wu1 94v0 wk2 wk2 sot 23 wk1 sot-23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1
Text: -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 -0.3 - 10 /-1 -1/-0.1 - 10 /-1 -5/-0.25 -5/-0.5 - 10 /-1 -1/-0.1 - 10 /-1 -5/-0.25 -5/-0.5 -5/-0.25 - 10 /-1 -1/-0.1 - 10 /-1 -0.5/-0.05 -5/-0.25 -5/-0.5 -5/-0.25 - 10 /-1 -1/-0.1 - 10 /-1 -0.5/-0.05 -5/-0.25 -5/-0.5 , 250 250 250 250 250 250 250 250 250 250 250 250 250 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5 - 10 /-5


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PDF CHDTA114TMPT CHDTA115TMPT CHDTA124TMPT CHDTA143TMPT CHDTA144TMPT CHDTA114TEPT CHDTA115TEPT CHDTA124TEPT CHDTA143TEPT CHDTA144TEPT WK2 94V0 transistor wu1 94v0 wk2 wk2 sot 23 wk1 sot-23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1
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