The Datasheet Archive

SF Impression Pixel

Search Stock (4)

  You can filter table by choosing multiple options from dropdownShowing 4 results of 4
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
MB8264A-10 FUJITSU Limited Bristol Electronics 25 $7.84 $3.92
MB8264A-10P FUJITSU Limited Bristol Electronics 25 - -
MB8264A10 Fuji Electric Co Ltd Chip One Exchange 955 - -
MB8264A10 Fuji Electric Co Ltd Chip One Exchange 1,000 - -

No Results Found

MB8264A-10 datasheet (4)

Part Manufacturer Description Type PDF
MB8264A-10 Fujitsu MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY Scan PDF
MB8264A-10 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
MB8264A-10C Fujitsu 65,536-Bit Dynamic RAM Original PDF
MB8264A-10P Fujitsu 65,536-Bit Dynamic RAM Original PDF

MB8264A-10 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: operates on a single + 5 V ± 10 % power supply. An on chip substrate bias generator provides high , . *3 *0 5 15 13 a 3 7 12 9 10 11 a4 , DT AA OT U BFE UF R , Address Set Up Time *ASR 0 — 0 — ns Row Address Hold Time I ran 10 â , sets o f co nd itio ns is satisfied the cond itio n o f the data o ut is indeterminate. 10 ) E ither t , = 5.5V, Vss = 0V, all other pins not under test = 0V) -1 0 10 i* OUTPUT LEAKAGE CURRENT


OCR Scan
PDF 536-Bit MB8264A-W 004pn
B82S4

Abstract: MB8264 11A410 TM22S
Text: Inputs and output. It operates on a single +5 V ± 10 % power supply. An on chip substrate bias generator , BUFFER n .o.Q 1 16 Vss 15 CÄ5 '$ 3 tn a 14 o 13 Ae 12 *» 11 A4 10 a 5 9 a7 DU 2 wC , * (Referenced to Vgg) Parameter Symbol Min 4.5 0 2.4 - 1.0 Typ 5.0 0 - - Max 5.5 0 6.5 0.8 , *RCD ·cR P *ASH *RAH *ASO ·CAH *RCS 30 60 120 20 0 0 10 0 15 0 0 20 0 25 25 40 40 0 25 50 110 30 , out Is indeterminate. 10 ) Either tRRH or I r c h must be satisfied for a read cycle. FU JITSU


OCR Scan
PDF 536-Bit MB8264A-W B82S4 MB8264 11A410 TM22S
MB6264A

Abstract: MB6264 TIC 120 MB8264A-15
Text: -bit organization · Row Access Time/Cycle Time MB8264A-10 100 ns MaxJ200 ns Min. MB8264A-12 120 ns MaxJ230 ns Min MB8264A-15 150 ns MaxJ260 ns Min. · Low Max Power Dissipation (Irc = mln) MB8264A-10 275 mW (Active , FU JITSU M IC R O E U S C T R O N IC S . IN C 10 NMOS 65,536-BIT DYNAMIC RANDOM ACCESS , voltage, ± 10 % tolerance · All inputs TTL compatible, low capacitive load · Three-state TTL compatible , 2 3 4 5 e 7 8 16 15 14 V ss ess o *3 a !| ï ï > 13 12 11 10 9 4 As a C


OCR Scan
PDF 536-BIT MB8264A 16-pin 18-pad MBS264A 10Ojus/Division MB6264A MB6264 TIC 120 MB8264A-15
MB8264A-15

Abstract: MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W
Text: compatible inputs and output. It operates on a single +5 V ± 10 % power supply. An on chip substrate bias , 18 IT V w 3 16 0 RÏS N.C. 4 5 Io o o u ^ 15 14 N.C. Ac 6 S3 *0 13 7 a 9 10 12 11 , A, Vcc , Low Voltage, all inputs vj[ - 1.0 — OS V FUJITSU 1-193 This Material Copyrighted By Its Respective , 'cRP 0 — 0 — ns Row Address Set Up Time *asr 0 — 0 — ns Row Address Hold Time 'rah 10 â , conditions is satisfied the condition of the data out is indeterminate. 10 ) Either tRRH or tRCH must be


OCR Scan
PDF MB8264A-12-W, MB8264A-15-W 536-Bit MB8264A-W MB8294A-12-W MB82S4A-1B-W MB8264A-15 MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W
Not Available

Abstract: No abstract text available
Text: output, tt operates on a single + 5 V ± 10 % power supply. An on chip substrate bias generator provides , RAS 3 4 5 6 7 8 9 10 s " < 0 ls> 3 § 2 16 1S 14 13 12 Q ^6 N.C *3 A« 18 17 V i N.C. - A , 16 15 14 vss c5s o ». *» Z ] a4 *. *7 3 2 tn O In * o>2 » » -s 13 12 11 10 9 *1 E , Cqut I Operating (Referenced to Vgg) Param atar Symbol v cc Vss V,H V,L Min 4.5 0 2.4 - 1.0 Typ 5.0 0 , 265 120 155 - - 0 3 100 120 60 50 30 60 120 20 0 0 10 0 15 0 0 20 0 25 25 40 40 0 25 50 110 260


OCR Scan
PDF 536-Bit MB8264A-W -12-W B8264A -15-W
MBB264A-18

Abstract: No abstract text available
Text: compatible Inputs and output, it operates on a single +5 V ± 10 % power supply. An on chip substrate bias , MB8 2 6 4 A ·12 -A Min M ai - 230 265 120 155 - - 0 3 100 120 60 50 30 60 120 20 0 0 10 0 15 0 0 20 , neither of the above sets of conditions is satisfied the condition of the data out is Indeterminate. 10 , Voltage (lOH = - 5mA) OH Output Low Voltage (1^ = 4.2mA) ^OL mA - 10 10 -1 0 2.4 0.4 10 V V


OCR Scan
PDF MB8264A-12-W, MB8264A-15-W 536-Bit MB8264A-W MBB264A-18
MB8264

Abstract: MB8264-15 i-117 mb81416
Text: 1-82 / 1-62 X 1-97 1-97 1-99 1-99 1*99 1-110 1-110 y MB8264A-10 64K x 1 V T r264A-12 y ^ 4 K x 1 , P ag e MRM17- 10 V U i117-12 V K '1 18-1 0 / MB8118-12 MB8264-15 M [V1 264-20 16K x 1 16K x 1 , MB8265A-12 / Vbc265A -15 MB8266A-1G MB8266A-12 f MB8266A-15 MB8281-12 MB8281-15 MB81256- 10 / V i-» » 1256-12 MB81256-15 M B81257- 10 / MB81257-12 MB81257-15 MB81416- 10 MB81416-12 ' MB81416-15 64K x 1 64 K x , 1-135 1-137 1-137 MB85101A- 10 64Kx4 M B85101A-12 -*, / d4 K x 4 MB85101A-15 64 K x 4 MB85103A-12 / 6


OCR Scan
PDF MB8264A-10 r264A-12 B264A-15 -264A-12W MBH264A-15W H265-20 bk265A-l0 MB8265A-12 Vbc265A MB8266A-1G MB8264 MB8264-15 i-117 mb81416
8264A-10

Abstract: MB8264A-15 8264A-12 TRANSISTOR BC 187 MB8264A MB8264A-10 MB8264A-12 50N02 ti95
Text: -15I Cycle time, 190 ns min ( MB8264A-10 ) 230 ns min (MB8264A-12) 260 ns min (MB 8264A-15) Single +5V Supply, ± 10 % tolerance Low power (active) 275 mW max ( MB8264A-10 ) 248 mW max (MB 8264A-12) 220 mW max (MB , +125 Power dissipation PD 1.0 W Short circuit output current 50 mA NOTE: Permanent device damage may , « ^DOUT RASQ 1 TOP " □ »e AoC 5 Vl™ 12 6 11 >< 7 10 J* VccC 8 9 "IN I SS CAS ¡ 8 ¡ 9 , Voltage, all inputs V,L* - 1.0 0.8 V Note * : The device can withstand undershoots to the -2V level with


OCR Scan
PDF 65536-BIT 264A-10 264A-12 264A-15 536-BIT MB8264A 183I4 264A-12 8264A-10 MB8264A-15 8264A-12 TRANSISTOR BC 187 MB8264A-10 MB8264A-12 50N02 ti95
MN4164P-12A

Abstract: MB8264-15 8264-20 RAM MCM6665L20 mn4164 MB8265-20 MN4164P-20 MCM6665L25 MSM3764-15RS MB8264
Text: /2 MB8264A-10 FUJITSU 0-70 100 200 20 15 90 200 20 230 4. 5—5. 5 50 2.4 0. 4/4. 2 2.4/- 128 , =REF MB8265S 10 FUJITSU 0-70 100 200 20 15 90 200 20 230 4. 5-5.5 50 2.4 0. 4/4. 2 2. 4/- 128/2 IP 1N=REF MB826SA-12 FUJITSU 0—70 120 230 20 15 10 (1 230 25 265 4. 5—5. 5 45 2.4 0. 4/4. 2 2. 4/- 128/2 IP IN=REF MB8266A- 10 FUJITSU 0—70 100 200 20 15 9(1 200 20 230 4. 5-5. 5 50 2.4 0.4/4. 2 2. 4/- 128 , 150 2G0 30 30 10 (1 260 45 310 4. 5—5. 5 54 0.8 2.4 5 0. 4/4. 2 2.4/5 7 128/2 MK4564P/N/J


OCR Scan
PDF 65536X1) M5K4164P-20 M5K41B4S-15 M5K4164S-20 128/P-20 MN4164P-25 MSM3764-12AS MSM3764-12AS/JS MSM3764-15AS MSM3764-15AS/JS MN4164P-12A MB8264-15 8264-20 RAM MCM6665L20 mn4164 MB8265-20 MN4164P-20 MCM6665L25 MSM3764-15RS MB8264
8264A-15

Abstract: 8264a MB8264A-10 MB8264A MB8264A-12 LCC-18C-F02
Text: transistor cell Row access time, 100 ns max ( MB8264A-10 ) 120 ns max (MB8264A-12) 150 ns max (MB 8264A-15) Cycle time, 190 ns min ( MB8264A-10 ) 230 ns min (MB 8264A-12) 260 ns min (MB 8264A-15) Single +5V Supply, ± 10 % tolerance Low power (active) 275 mW max (MB 8264A-10) 248 mW max (MB 8264A-12) 220 mW max (MB , -55 to +125 Power dissipation Pd 1.0 w Short circuit output current 50 mA NOTE: Permanent , –¡ vSS 2 15 □ cäs wC 3 14 JOour RASC A top 13 □ »e AoC 5 view 13 6 11 □ a„ 7 10 □ A


OCR Scan
PDF 65536-BIT 264A-10 264A-12 264A-15 536-BIT MB8264A sing08 16-pin 16-LEAD DIP-16P-M03) 8264A-15 8264a MB8264A-10 MB8264A-12 LCC-18C-F02
Not Available

Abstract: No abstract text available
Text: – Single +5 Vsupply, ± 10 % tolerance ■Low power (active) 1980 mW max. (MB85103A-12) 1760 mW max , £ [ a2 17 = C 10 i-[ Ao RAS 19 dq6 20 = t dq7 Package Dimensions 22


OCR Scan
PDF 374T7bH 0DQ30aH MB85103A MB8264A 18-pad 22-pln MSP-22S-CC02)
MB85101A-15

Abstract: MB85101A-12 MB8264A MB85101A-10 d ram memory ic diagram block ram 16 4bit
Text: FUJITSU MB85101A- 10 , MB85101A-12, MB85101A-15 MOS 65,536 x 4-Bit Dynamic RAM Module , Row Access Time 100 ns max. (MB85101A- 10 ) 120 ns max. (MB85101A-12) 150 ns max. (MB85101A-15) I Cycle Time 200 ns min. (MB85101A- 10 ) 230 ns min. (MB85101A-12) 260 ns min. (MB85101A-15) I Single +5 V supply, ± 10 % tolerance I Low power (active) 1100 mW max. (MB85101A- 10 ) 990 mW max. (MB85101A-12) 880 , 1-239 This Material Copyrighted By Its Respective Manufacturer MB85101A- 10 MB85101A-12 MB85101A


OCR Scan
PDF MB85101A-10, MB85101A-12, MB85101A-15 MB85101A MB8264A 18-pad 22-pin MB85101A-10) MB85101A-12) MB85101A-15 MB85101A-12 MB85101A-10 d ram memory ic diagram block ram 16 4bit
Not Available

Abstract: No abstract text available
Text: ,536 x 4-bit DRAM module I Row Access Time 100 ns max. (MB85101A- 10 ) 120 ns max. (MB85101A-12) 150 ns max. (MB85101A-15) I Cycle Time 200 ns min. (MB85101A- 10 ) 230 ns min. (MB85101A-12) 260 ns min. (MB85101A-15) I Single +5 V supply, ± 10 % tolerance I Low power (active) 1100 mW max. (MB85101A- 10 ) 990 mW , chip selects. On-chip latches for Addresses and Data-in 1-133 M B 85 101 A - 10 M B 88 101 A -12


OCR Scan
PDF MB85101A MB8264A 18-pad 22-pin 22-Lead MDL-22S-CC01)
Not Available

Abstract: No abstract text available
Text: min. (MB85103A-12) 260 ns min. (MB85103A-15) I Single +5 V supply, ± 10 % tolerance I Low power (active , = Z 9 t= = Z 10 c = C r Vcc DQ0 DQ, CAS Ar [= As A* dq2 dq3 w A, *3 11 e = C


OCR Scan
PDF MB85103A MB8264A 18-pad 22-pin MDL-22S-CC02)
Not Available

Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 7fl De| 374c i?t,5 DDDBDHQ M |~~>7z %-%h(7 FU JITSU ■MB85101A- 10 , Time 100 ns max. (MB85101A- 10 ) 120 ns max. (MB85101A-12) 150 ns max. (MB85101A-15) I Cycle Time 200 ns min. (MB85101A- 10 ) 230 ns min. (MB85101A-12) 260 ns min. (MB85101A-15) I Single +5 V supply, ± 10 % tolerance I Low power (active) 1100 mW max. (MB85101A- 10 ) 990 mW max. (MB85101A-12) 880 , ( 37M*ï7L>2 0003021 b | M B 86101A - 10 M B 85101A -12 MB8S101A-1B M B85101 Block Diagram and


OCR Scan
PDF MB85101A-10, MB85101A-12, MB85101A-15 MB85101A MB8264A 18-pad 22-pin 22-Lead MSP-22S-CC01)
MB8264

Abstract: FPT-80P-M01
Text: April 1991 Edition 1.0 D A TA SH EET FUJITSU MB87045 VIDEO DRAM CONTROLLER The video , Input-output to external memory IN IN IN I, O I, o 9 10 output Vss OE - Ground External memory , Vdd Ta Io H Value + 5.0 + 5% 0 Unit V °C to + 7 0 (maximum) -0 .4 10 mA loL , mA V oh VoL V,H V lL = -0 .4 10 mA 4.2 Vss Io l = mA 0.5 V _ V ddx0.7 - , form or by any means, or transferred to any third party without prior written consent of Fujitsu. 10


OCR Scan
PDF MB87045 MB40576 MB81464, MB40776 KV0019-914A1 MB8264 FPT-80P-M01
Not Available

Abstract: No abstract text available
Text: 'ï < IS fiP A p ril 1991 Edition 1.0 DATA S H E E T cP FUJITSU MB87045 VIDEO DRAM , No. Symbol 10 IN IN Description Input from ADC Input from ADC (LSB) 1 2 3 4 5 DQO , IN DQ0-6 DQO-5 DQO-4 DQO-3 DQO-2 1 ,o 1 ,o 1 ,o 1 ,o 1 ,o - 66 67 68 69 70 71 9 10 , (source) current Output LOW (sink) current V dd Ta Ioh V °C mA lo L 10 (maximum , Id d s Quiescent Io h 4 .2 Vss V ddx0.7 - mA VoH VoL = - 0 . 4 mA 10 mA Io l =


OCR Scan
PDF MB87045 MB40576 MB81464, MB40776
c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: 2N5039 TIP141 MPS U- 10 2N6292 2N5428 2N6306 MJE1661 35821E 2N3904 CHIP Part Num. 1854-0771 , M BR1060 RU R810 3SF2 16MQ40 (SEL) TG- 10 QSCH1187 RGP15M SPRO SD103C MF1504 1N4531 M P , U R880 E MUR1560 N BR340 P6KE7 .5CA BAS40 MUR120RL 1 .5KE160A BY505 RHC10-12 RPR4-D- 10


Original
PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
M5L8042

Abstract: panasonic inverter dv 707 manual ccd camera mc 7218 wiring diagram panasonic inverter manual dv 707 tda 12011 pin details tmm2114 tda 12011 Toshiba DC MOTOR DGM 3520 2A sn29764 MC74HC4538
Text: by manufacturer and then described by specific performance parameters. 10 ®IC MASTER 1985 MSG


OCR Scan
PDF S-17103 54070Z CH-5404 M5L8042 panasonic inverter dv 707 manual ccd camera mc 7218 wiring diagram panasonic inverter manual dv 707 tda 12011 pin details tmm2114 tda 12011 Toshiba DC MOTOR DGM 3520 2A sn29764 MC74HC4538
sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: No file text available


Original
PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
1977 - TMS4464

Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Text: °C - 10 100 ns -35350 ns :c CO t: - 55°C to 100°C CO .r: CJ . -15 150 ns , 70 ns 91 SRAM - 10 100 ns 92 ROM -15 150 ns 17/27 EPROM -20 200 ns , . TEXAS 75265 INTERCHANGEABILITY GUIDE FUJITSU MB 8264 - 10 A tn.) . (s. Q) "'C Max Access ·S MB Fujitsu - 10 100 ns C!J MBM Industry Standard. Prefix -12 , INMOS IMS -15 2600 Max Access -45 45 ns -55 - 10 100 ns -12 120 ns -15


Original
PDF SMYD002 o184-464PP-142M iS-146 TMS4464 TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
2002 - mt3514

Abstract: mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB , 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / WOB B40C1000 B80C1000 B125C1000 B250C1000 B380C1000 B500C1000 100 200 300 600 900 1200 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


Original
PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
2003 - GFM 64A

Abstract: GDV 64A GFM 85A 625 GFG 79mcc GHR 26A tvs SMC MARKING 33 TVS SMC GFM 57, TVS GFM 15A
Text: 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 , 37 38 34 35 32 33 29 30 27 28 25 26 23 24 21 22 18 19 17 18 15 16 14 14.5 12.5 13 11.5 12 10 11 9.0 , 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 1.0 1.0 1.0


Original
PDF DO-41 P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 GFM 64A GDV 64A GFM 85A 625 GFG 79mcc GHR 26A tvs SMC MARKING 33 TVS SMC GFM 57, TVS GFM 15A
2003 - mb101

Abstract: No abstract text available
Text: DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 , 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.0 1.0 1.0 1.3 1.7 1.7 1.7 1.0 1.0


Original
PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101
2011 - Not Available

Abstract: No abstract text available
Text: -8 RG1676-9 RG1676- 10 RG1676-11 RG1676-12 RG1676-13 RG1676-14 RG1676-15 RG1676-16 RG1676-17 RG1676 , ® RESISTANCE TOLERANCE OHMS % 100 100 10 220 220 100 100 100 220 220 220 220 220 220 220 220 100 220 220 100 10 220 220 220 220 47 47 47 200 100 22 100 50 220 220 220 100 50 50 15 33 15 47 100 220 10 220 100 100 470 220 22 75 47 10 50 100 220 220 220 68 220 50 220 10 820 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10


Original
PDF RG1676 RG1676 RG1676-1 RG1676-2 RG1676-3 RG1676-4 RG1676-5 RG1676-6 RG1676-7 RG1676-8
Supplyframe Tracking Pixel