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MB814405D datasheet (1)

Part Manufacturer Description Type PDF
MB814405D Fujitsu Hyper Page Mode Dynamic RAM Scan PDF

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MB814405D

Abstract:
Text: MB814405D-xxLPJN (Low Power) 2 MB814405D-60 /60L/-70/70L Fig. 1 - MB814405D DYNAMIC RAM-BLOCK DIAGRAM ras cas , *2 Supply Current) MB814405D-60 |cc3 CAS = ViH, RAS cycling; trc = min — — 90 mA MB814405D-70 , MB814405D-70 65 Refresh Current #2 (Average Power *2 Supply Current) MB814405D-60 |cc5 RAS cycling , ) MB814405D-60 |cc9 RAS = CAS < 0.2 V Self refresh — — 1000 300 (iA MB814405D-70 1000 300 7 , noted.) Notes 3,4,5 No. Parameter Notes Symbol MB814405D-60 MB814405D-70 Unit Min. Max. Min. Max


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PDF MB814405D-60/60L/-70/70L MB814405D 26-LEAD LCC-26P-M04) 008-oo1 C26054S-3C-1
1996 - MB814405D

Abstract:
Text: MB814405D-70 /70L MB814405D-60 /60L ICC4 MB814405D-70 /70L MB814405D-60 /60L MB814405D-70 /70L MB814405D-60L 2 Refresh current #3 (Average power supply current) MB814405D-70L MB814405D-60 /60L I CC9 , ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ­ PRELIMINARY ­ Edition 1.0 MB814405D-60 /70 MB814405D-60L /70L RECOMMENDED , ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ­ PRELIMINARY ­ Edition 1.0 MB814405D-60 /70 MB814405D-60L /70L DC , ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ­ PRELIMINARY ­ MB814405D-60 /70 MB814405D-60L /70L Edition 1.0 AC CHARACTERISTICS (At


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PDF MB814405D-60/70/60L/70L MB814405D
Not Available

Abstract:
Text: 90 - - 75 1.5 mA 0.2 CMOS level MB814405D-60 *2 MB814405D-70 MB814405D-60 MB814405D-70 MB814405D-60 *2 MB814405D-70 MB814405D-60L |C C 6 MB814405D-70L MB814405D-60 |C C 9 MB814405D-70 |C C 5 Icc4 , Current (Average Power Supply Current) MB814405D-60 *2 MB814405D-70 TTL level lo(L) -1 0 - 10 , tR P S tC H S MB814405D-60 Min. Max. 100 105 -5 0 - - - MB814405D-70 Min. Max. 100 - 125 -5 , -pin plastic (300 mil) SOJ, order as MB814405D-xxPJN - 26-pin plastic (300 mil) SOJ, order as MB814405D-xxLPJN


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PDF MB814405D-60/60L/-70/70L MB814405D
MBB144

Abstract:
Text: IM IN A R Y Edition 1.0 MB814405D-60 /70 MB814405D-60L /70L Fig. 1 - MB814405D DYNAMIC RAM - , enable. 3 374T7SL, 0G2G425 1Û4 -P R E L IM IN A R Y Edition 1.0 MB814405D-60 /70 MB814405D-60L , - P R E L IM IN A R Y Edition 1.0 MB814405D-60 /70 MB814405D-60U70L DC CHARACTERISTICS , ) |~ ~| 2 >CC3 MB814405D-70 /70L MB814405D-60 /60L !CC4 MB814405D-70 /70L MB814405D-60 /60L MB814405D-70 /70L !CC5 MB814405D-60L GO Refresh current #3 (Average power supply current


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PDF MB814405D MB814405D-60/70 MB814405D-60L/70L 26-LEAD LCC-26P-M04) C26054S-3G-1 MBB144
1993 - MB814405D

Abstract:
Text: ; CAS-before-RAS; tRC = min - - MB814405D-70 MB814405D-60L Refresh Current #3 (Average Power Supply Current) MB814405D-60 ICC6 MB814405D-70L ICC9 MB814405D-70 mA - MB814405D-60 , ) SOJ, order as MB814405D-××LPJN (Low Power) 2 To Top / Lineup / Index MB814405D-60 /60L/-70 , ; tRC = min Operating Current (Average Power Supply Current) V MB814405D-60 *2 MB814405D-70 , × 4 BITS HYPER PAGE MODE DYNAMIC RAM MB814405D-60 /60L/-70/70L CMOS 1,048,576 × 4 BITS Hyper Page


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PDF DS05-11309-1E MB814405D-60/60L/-70/70L MB814405D F9704
1996 - 4MX1

Abstract:
Text: (1Mx4 EDO Mode, 5V) MB814405D DATA SHEET EDITION 1.0 27k (1Mx4 EDO Mode, 3.3V) MB81V4405C For full


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PDF MB814400A MB814400D MB814400C MB814405C MB814405D MB81V4405C 81V4405C MB814100A MB814100D MB814100C 4MX1 MB814260 407K MB814100D MB814400A MB814405C MB814405D
1997 - 1Mx4 EDO RAM

Abstract:
Text: July 1997 Revision 1.0 data sheet ESA1UN3241A-60JS-S 4MByte (1M x 32) CMOS EDO DRAM Module General Description The ESA1UN3241A-60JS-S is a high performance, EDO (Extended Data Out) 4-megabyte dynamic RAM module organized as 1M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. The module utilizes eight, Fujitsu MB814405D-60PJ CMOS 1Mx4 EDO dynamic RAM in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a decoupling


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PDF ESA1UN3241A-60JS-S ESA1UN3241A-60JS-S 32bits, 72-pin, MB814405D-60PJ MP-DRAMM-DS-20545-7/97 1Mx4 EDO RAM
1998 - 3654P

Abstract:
Text: 297 MB814405D-60 60[35] 105 495 MB814405D-70 70[35] 125 413 MB814405D-60L 60[35] 105 495 MB814405D-70L 70[35] 125 413 MB814800-60 60[20]*1 110 , 60 ns. Self-refresh MB814405D Fast page mode L MB814400C Hyper page mode from


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PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram mb814400a-70 MB81G83222-008 4464 ram
1997 - 1Mx4 dram simm

Abstract:
Text: July 1997 Revision 1.0 data sheet ESA2UN3241A-(60/70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241A-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. The module utilizes sixteen, Fujitsu MB814405D- (60/70)PJ CMOS 1Mx4 EDO dynamic RAM in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a decoupling


Original
PDF ESA2UN3241A- 32bits, 72-pin, MB814405D- 60/70ns) MP-DRAMM-DS-20548-7/97 1Mx4 dram simm 1Mx4 EDO RAM ESA2UN3241A-60JS-S
Not Available

Abstract:
Text: cP IITSU data sheet July 1997 Revision 1.0 ESA2UN3241A-(60/70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241 A-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. The module utilizes sixteen, Fujitsu MB814405D- (60/70)PJ CMOS 1 Mx4 EDO dynamic RAM in a surface mount package on an epoxy laminate substrate. Each device is accompanied


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PDF ESA2UN3241A- ESA2UN3241 32bits, 72-pin, MB814405D- 60/70ns)
Not Available

Abstract:
Text: cP IITSU data sheet July 1997 Revision 1.0 ESA 1UN3241A-60JS-S 4MByte (1M x 32) CMOS EDO DRAM Module General Description The ESA1UN3241A-60JS-S is a high performance, EDO (Extended Data Out) 4-megabyte dynamic RAM module organized as 1M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. The module utilizes eight, Fujitsu MB814405D-60PJ CMOS 1Mx4 EDO dynamic RAM in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a decoupling


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PDF 1UN3241A-60JS-S ESA1UN3241A-60JS-S 32bits, 72-pin, MB814405D-60PJ 1Mx16,
Not Available

Abstract:
Text: -pin plastic (300mil) SOJ, order as MB814405D-xxPJN - 26-pin plastic (300mil) SOJ, order as MB814405D-xxLPJN , RAM (DRAM) that contains 4,194,304 m emory cells accessible in 4 -b it increm ents. The MB814405D , of the design. Since the standby current of the MB814405D is very small, the device can be used as a , ,024x4-bits can be accessed and, when m ultiple MB814405Ds are used, CAS is decoded to select the desired


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PDF B814405D MB814405D
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