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MB814405C-60 INSTOCK
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MB814405C-60 datasheet (2)

Part Manufacturer Description Type PDF
MB814405C-60PFTN Fujitsu DRAM Original PDF
MB814405C-60PJN Fujitsu DRAM Original PDF

MB814405C-60 Datasheets Context Search

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MB814405C

Abstract: No abstract text available
Text: MEMORY CMOS 1M x 4 BIT HYPER PAGE MODE DYNAMIC RAM MB814405C-60 /-70 CMOS 1,048,576 x 4 BIT , TTL compatible. ■PRODUCT LINE & FEATURES Parameter MB814405C-60 MB814405C-70 RAS Access Time , voltage higher than maximum rated voltages to this high impedance circuit. MB814405C-60 /MB814405C-70 â , -26-pin plastic (300 mil) TSOP-II with normal bend leads, order as MB814405C-xxPFTN 2 MB814405C-60 , /Output Capacitance, DQi to DCk Cdq - 7 PF 3 MB814405C-60 /MB814405C-70 PIN ASSIGNMENTS AND DESCRIPTIONS


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PDF MB814405C-60/-70 MB814405C MB814405C-60/MB814405C-70 FPT-26P-M01 F26001S-3C-3
Not Available

Abstract: No abstract text available
Text: -26P-M04 PRODUCT LINE & FEATURES Marking side Parameter MB814405C-60 RAS Access Time MB814405C , MB814405C-60 MB814405C-70 Fig. 1 - MB814405C DYNAMIC RAM - BLOCK DIAGRAM RS5 Clock Gen #1 CAS , PRELIM IN ARY- - Edition 2.2 MB814405C-60 MB814405C-70 PIN ASSIGNMENTS AND DESCRIPTIONS , cl75b DD1Ô47T 70S ■PRE LIM IN AR Y- - Edition 2.2 MB814405C-60 MB814405C , reactivated BTMTTSb 001B4BD 4T7 -P R E L I M I N A R Y Edition 2.2 MB814405C-60 MB814405C


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PDF 14405C-60/-70 MB814405C MB814405C-60 MB814405C-70 26-LEAD FPT-26P-M01) 004/i F26001S-3C-3
374C

Abstract: No abstract text available
Text: -26P-M04 PRODUCT LINE & FEATURES Marking side Parameter MB814405C-60 MBS14406C-7Ö RAS Access Time , Edition 2.1 MB814405C-60 MB814405C-70 Fig. 1 - MB814405C DYNAMIC RAM - BLOCK DIAGRAM CAPACITANCE , PRELIMINARY Edition 2.1 MB814405C-60 MB814405C-70 PIN ASSIGNMENTS AND DESCRIPTIONS 26-Pln SOJ: 26 , PRELIMINARY Edition 2.1 MB814405C-60 MB814405C-70 RECOMMENDED OPERATING CONDITIONS 1 N o te s ! , ■374T7SL DG11SE2 345 - PRELIMINARY Edition 2.1 MB814405C-60 MB814405C-70 DC


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PDF B814405C-60/-70 MB814405C 024-bits MB814405C-60 MB814405C-70 26-LEAD FPT-26P-M01) F26001S-3C-3 374C
Not Available

Abstract: No abstract text available
Text: Cycle Time . . MB814405C-60 60 ns max. 15 ns max. 30 ns max. 104 ns , a n m a x im u m ra te d v o lta g e s to th is h ig h im p e d a n c e c irc u it. MB814405C-60 , , order as MB814405C-xxPFTN 2 MB814405C-60 /MB814405C-70 Fig. 1 - MB814405C DYNAMIC R A M -B L , PF 3 MB814405C-60 /MB814405C-70 PIN ASSIGNMENTS AND DESCRIPTIONS 26-Pin SOJ: (TOP VIEW) MB814405C-60 /MB814405C-70 RECOMMENDED OPERATING CONDITIONS


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PDF MB814405C F9703
Not Available

Abstract: No abstract text available
Text: Edition 2.2 MB814405C-60 MB814405C-70 Fig. 1 - M B 8 1 4 4 0 5 C D Y N A M I C R AM - BLOCK , to DQ4 c DQ 2 - PRELIMINARY Edition 2.2 MB814405C-60 MB81 44 05 C - 70 PIN A S S , PRELIMINARY Edition 2.2 MB814405C-60 MB814405C-70 R E C O M M E N D E D OPERATING C ON DIT IO NS g , Edition 2.2 MB814405C-60 MB81 44 05 C - 70 DC C H A R A C T E R IS T IC S ( R e c o m m e n d e d o pe , supply current) MB814405C-60 RAS & CAS cycling; 'c c i MB814405C-70 RAS = CAS = V ih - 61 tRC =


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PDF 4405C-60/-70 B814405C DS05-10189-1E S-20095-5/96
1997 - MB814405C

Abstract: mb814405c-60
Text: 4 BIT HYPER PAGE MODE DYNAMIC RAM MB814405C-60 /-70 CMOS 1,048,576 × 4 BIT Hyper Page Mode , and all inputs are TTL compatible. s PRODUCT LINE & FEATURES Parameter MB814405C-60 , impedance circuit. To Top / Lineup / Index MB814405C-60 /MB814405C-70 s ABSOLUTE MAXIMUM RATINGS (See , , order as MB814405C-xxPFTN 2 To Top / Lineup / Index MB814405C-60 /MB814405C-70 Fig. 1 ­ , / Index MB814405C-60 /MB814405C-70 s PIN ASSIGNMENTS AND DESCRIPTIONS 26-Pin SOJ: (TOP VIEW)


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PDF DS05-10181-3E MB814405C-60/-70 MB814405C F9703 mb814405c-60
1996 - MB814405C

Abstract: DS05
Text: PRODUCT PROFILE SHEET MB814405C-60 /-70 CMOS 1M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit , MB814405C-60 MB814405C-70 RAS Access Time 60ns max. 70ns max. CAS Access Time 15ns max , PRELIMINARY ­ Edition 2.2 MB814405C-60 MB814405C-70 Fig. 1 ­ MB814405C DYNAMIC RAM ­ BLOCK DIAGRAM , PRELIMINARY ­ Edition 2.2 MB814405C-60 MB814405C-70 PIN ASSIGNMENTS AND DESCRIPTIONS 26­Pin SOJ , MB814405C-60 MB814405C-70 RECOMMENDED OPERATING CONDITIONS Notes Parameter Typ Max 4.5


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PDF MB814405C-60/-70 MB814405C DS05
128M-BIT

Abstract: 256-MBIT 128-MBIT
Text: > Capacity Ace««# Tfcna max. (ns) 60 (15] 70(20] Power Consumption max. (mW) Package Operating 2684 , Standby Mode (CMOS level} 44 72Pin SIMM MB85341C- 60 MB85341C-70 1Mx32 MB85343C- 60 MB85343C-70 32M-bit 60 (15] 70(20] 60 (15] 70(17] 60 (15] 70(20] 60 (15] 70(20] 44 72Pin SIMM MB8501DQ32AA-6Ö MB8118160A x2 MB8501D032AA-70 MB85342C- 60 MB85342C-70 MB85344C- 60 MB85344C-70 2Mx32 MB8502D032AA- 60 MB8118160A x4 MB85020032AA-70 MB8502E032AA- 60 MB8118165A x4 MB8502E032AA-70 MB85391A- 60 MB85391A


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PDF MB814400C MB814405C 72Pin MB85341C-60 MB85341C-70 1Mx32 MB85343C-60 MB85343C-70 32M-bit 128M-BIT 256-MBIT 128-MBIT
Not Available

Abstract: No abstract text available
Text: 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 68 70 72 4 4 m , DQ28 DQ29 DQ30 DQ31 NC PD2 PD4 VSS Pin # Sym bo 67 68 69 70 PD1 PD2 PD3 PD4 - 60 -70 VSS Vss , FUJITSU LIM ITED 1 M B 853 43C - 60 M B 853 43C -70 FUNCTIONAL BLOCK DIAGRAM CASO RASO CAS , Current #2 *2 (Average power supply current) Refresh Current #3 (Average power supply current) MB85343C- 60 MB85343C-70 TTL Level CMOS Level MB85343C- 60 MB85343C-70 MB85343C- 60 MB85343C-70 MB85343C- 60 MB85343C


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PDF MB85343C MB814405C MB85343G 32bits
1997 - m7203

Abstract: MB814405C
Text: 32 BIT HYPER PAGE MODE DRAM MODULE MB85343C- 60 /-70 CMOS 1,048,576 × 32 Bit Hyper Page Mode DRAM , MB85343C- 60 /MB85343C-70 s PRODUCT LINE & FEATURES Parameter RAS Access Time Random Cycle Time Address , NC s PACKAGE MSS-72P-P29 MSP-72P-P48 2 MB85343C- 60 60 ns max. 104 ns min. 30 ns max , DQ24 50 DQ25 52 DQ26 54 DQ27 56 DQ28 58 DQ29 60 DQ30 62 DQ31 64 NC 66 PD2 68 PD4 , VSS CAS2 CAS1 NC WE DQ8 DQ9 DQ10 DQ11 DQ12 VCC DQ13 DQ14 DQ15 PD1 PD3 NC - 60 VSS


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PDF DS05-11212-1E MB85343C-60/-70 MB85343C MB814405C 32bits F9703 m7203
1995 - MB814405C

Abstract: dram memory module 1993
Text: November 1995 Edition 1.0 PRODUCT PROFILE SHEET MB85343C- 60 /-70 CMOS 1M x 32 Hyper Page Mode , MB85343C- 60 MB85343C-70 RAS Access Time 60ns max. 70ns max. Random Cycle Time 104ns min , DQ31 NC PD2 PD4 VSS 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 68 70 72 37 , Temperature TSTG NOTE: Copyright ­55 to +125 Pin # Symbol - 60 -70 PD1 VSS VSS , this high impedance circuit. © 1995 by FUJITSU LIMITED 1 MB85343C- 60 MB85343C-70 FUNCTIONAL


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PDF MB85343C-60/-70 MB85343C MB814405C 32bits dram memory module 1993
Not Available

Abstract: No abstract text available
Text: MB85343C- 60 /M B85343C-70 PRODUCT LINE & FEATURES Parameter RAS Access Time Random Cycle Time Address , (EDO) MB85343C- 60 60 ns max. 104 ns min. 30 ns max. 15 ns max. 25 ns min. 2688 mW max. 2904 mW max. 88 , 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 68 70 72 Symbol PD1 PD2 PD3 , 69 71 - 60 Vss NC NC NC PACKAGE DQ0 DQ1 DQ2 DQ3 VCC A0 A2 A4 A6 DQ4 DQ5 DQ6 DQ7 A7 VCC A9 RAS2 , MB85343C- 60 /M B85343C-70 3 MB85343C- 60 /M B85343C-70 RECOMMENDED OPERATING CONDITIONS (Referenced


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PDF MB85343C MB814405C 32bits 72-pad F9703
MA456

Abstract: No abstract text available
Text: axim um rated voltages to this high im pedance circuit. 1 MB85344C- 60 /M B85344C-70 PRODUCT , % Supply Voltage 1,024 Retresh Cycles/16.4 ms Hyper page mode operation (EDO) MB85344C- 60 60 ns max. 104 ns , 44 46 48 50 52 54 56 58 60 62 64 66 68 70 72 1 3 5 7 g 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 , PD2 PD3 PD4 - 60 NC NC NC NC -70 NC NC 67 68 69 70 MSS-72P-P49 2 Vss NC MB85344C- 60 , 0 -1 5 AO - A9 OVcc oVss 3 MB85344C- 60 /M B85344C-70 RECOMMENDED OPERATING CONDITIONS


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PDF MB85344C MB814405C 024-bit F9703 MA456
Not Available

Abstract: No abstract text available
Text: PD2 PD4 VSS 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 , 68 69 70 PD1 PD2 PD3 PD4 - 60 NC NC NC NC -70 NC NC Vss NC mA W °c Perm anent device , o p y r ig h t© 1995 by FUJITSU LIM ITED 1 M B 853 44C - 60 M B 853 44C -70 2 M B8 53 , #2 *2 (Average power supply current) Refresh Current #3 (Average power supply current) MB85344C- 60 MB85344C-70 TTL Level CMOS Level MB85344C- 60 MB85344C-70 MB85344C- 60 MB85344C-70 MB85344C- 60 MB85344C


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PDF MB85344C MB814405C 024-bit MB85344 72050S-1C
Not Available

Abstract: No abstract text available
Text: November 1995 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB85343C- 60 /-70 CMOS 1M x 32 , (SIMM). Parameter MB85343C- 60 MB85343C-70 RAS Access Time 60ns max. 70ns max , DQ27 DQ28 DQ29 DQ30 DQ31 NC PD2 PD4 VSS 38 40 42 44 46 48 50 52 54 56 58 60 62 , maximum rated voltages to this high impedance circuit._ MB85343C- 60 MB85343C-70 2 ■3?4l ì7Sh GDI G HT ? bOG MB85343C- 60 MB85343C-70 RECOMMENDED OPERATING CONDITIONS


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PDF MB85343C-60/-70 MB85343C MB814405C 32bits M72049S-1C
1997 - MAX2992

Abstract: MB85344C-60 MB814405C
Text: 32 BIT HYPER PAGE MODE DRAM MODULE MB85344C- 60 /-70 CMOS 2,097,152 × 32 Bit Hyper Page Mode DRAM , MB85344C- 60 /MB85344C-70 s PRODUCT LINE & FEATURES Parameter RAS Access Time Random Cycle Time Address , Cycles/16.4 ms Hyper page mode operation (EDO) MB85344C- 60 60 ns max. 104 ns min. 30 ns max. 15 , 46 48 50 52 54 56 58 60 62 64 66 68 70 72 37 39 41 43 45 47 49 51 53 55 57 , - 60 NC NC NC NC -70 NC NC VSS NC To Top / Lineup / Index MB85344C- 60 /MB85344C


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PDF DS05-11211-1E MB85344C-60/-70 MB85344C MB814405C 024-bit F9703 MAX2992 MB85344C-60
1995 - MB814405C

Abstract: MB85344C-60 dram memory module 1993 M7205
Text: November 1995 Edition 1.0 PRODUCT PROFILE SHEET MB85344C- 60 /-70 CMOS 2M x 32 Hyper Page Mode , MB85344C- 60 MB85344C-70 RAS Access Time 60ns max. 70ns max. Random Cycle Time 104ns min , DQ31 NC PD2 PD4 VSS 38 40 42 44 46 48 50 52 54 56 58 60 62 64 66 68 70 72 37 , Temperature TSTG NOTE: Copyright ­55 to +125 Pin # Symbol - 60 -70 PD1 NC NC , this high impedance circuit. © 1995 by FUJITSU LIMITED 1 MB85344C- 60 MB85344C-70 FUNCTIONAL


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PDF MB85344C-60/-70 MB85344C MB814405C 024-bit -72P-P49) M72050S-1C MB85344C-60 dram memory module 1993 M7205
1996 - MB814260

Abstract: 4MX1 MB814100D MB814400A MB814405C MB814405D 407K
Text: No file text available


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PDF MB814400A MB814400D MB814400C MB814405C MB814405D MB81V4405C 81V4405C MB814100A MB814100D MB814100C MB814260 4MX1 MB814100D MB814400A MB814405C MB814405D 407K
Not Available

Abstract: No abstract text available
Text: November 1995 Edition 1.0 FUJITSU PRODUCT PROFILE SHEET MB85344C- 60 /-70 CMOS 2M X 32 , package (SIMM). Parameter MB85344C- 60 MB85344C-70 RAS Access Time 60ns max. 70ns max , 46 48 50 52 54 56 58 60 62 64 66 68 70 72 37 39 41 43 45 47 49 51 53 55 57 , high im p e d a n c e circuit._ MB85344C- 60 MB85344C-70 FUNCTIONAL BLOCK , -► CH IPS 0 0 -1 5 374T75b ÜD1G30S S07 ■MB85344C- 60 MB85344C-70 RECOMMENDED OPERATING


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PDF MB85344C-60/-70 MB85344C MB814405C B85344C 024-bit MB8534S 72050S-1C
1998 - 3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram mb814400a-70 MB81G83222-008 4464 ram
Text: 605 MB814400D-70L 70[20]*1 125 550 MB814405C-60 60 [35]*2 104 336 MB814405C-70 70[40]*2 119 297 MB814405C-60L 60 [35]*2 104 336 MB814405C-70L 70[40]*2 119 , Access Part Number Time Variation Features from 60 ns. L from 60 ns. MB814400A L from 60 ns. L from 60 ns. Self-refresh MB814400D L from 60 ns. MB814405C L from 60 ns. Self-refresh MB814405D Fast page mode L MB814400C Hyper page mode from


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PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram mb814400a-70 MB81G83222-008 4464 ram
1997 - 1Mx4 EDO RAM

Abstract: ESA1UN3241-60JS-S
Text: . Features · High Density: 4MByte · Fast Access Time of 60 ns (max.) · Low Power: Active (60ns) 2.7 W , 1 VSS PD2 Pin No. - 60 NC Pin Designation VSS Pin No. 19 Pin Designation , 24 DQ6 42 CAS3* 60 DQ29 7 DQ18 25 DQ22 43 CAS1* 61 DQ13 8 , , TA = 0 to +70 °C) 60 Parameter Symbol Test Condition Unit Note 488 mA 1, 2 , CHARACTERISTICS (TA = 0 to +70°C, VCC = 5.0V±10%V, VSS = 0V) 60 Parameter Symbol Unit Min Notes


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PDF ESA1UN3241-60JS-S ESA1UN3241-60JS-S 32bits, 72-pin, MB814405C-60PJ 1Mx4 EDO RAM
1997 - ESA2UN3241-60JS-S

Abstract: 1MX4
Text: July 1997 Revision 1.0 data sheet ESA2UN3241-( 60 /70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241-( 60 /70)JS-S is a high performance, EDO (Extended Data Out) 8 , (SIMM) package. The module utilizes sixteen, Fujitsu MB814405C-( 60 /70)PJ CMOS 1Mx4 EDO dynamic RAM in a , . Features · High Density: 8MByte · Fast Access Time of 60 /70 ns (max.) · Low Power: Active ( 60 /70ns , PD3 NC Vss PD4 1 -70 PD1 Pin No. - 60 NC NC Pin Designation VSS


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PDF ESA2UN3241- 32bits, 72-pin, MB814405C- 60/70ns) MP-DRAMM-DS-20547-7/97 ESA2UN3241-60JS-S 1MX4
Not Available

Abstract: No abstract text available
Text: . Features · · · High Density: 4MByte Fast Access Time of 60 ns (max.) Low Power: Active (60ns) 2.7 W (max , Supply Ground No Connection Presence Detect Pins Pin PD1 PD2 PD3 PD4 - 60 v ss v ss NC NC , . 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Pin Designation DQ11 D Q 27 D Q 12 D Q 28 o , = 0 to +70 °C) 60 Parameter O p e ra tin g C u rre n t July 1997 Revision 1.0 ESA , -S AC CHARACTERISTICS (TA = 0 to +70°C, Vc c = 5.0V±10%V, Vss = OV) 60 Param eter Sym bol Min Random


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PDF 1UN3241-60JS-S ESA1UN3241-60JS-S 32bits, 72-pin, MB814405C-60PJ
Not Available

Abstract: No abstract text available
Text: cP IITSU data sheet July 1997 Revision 1.0 ESA2UN3241-( 60 /70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241-( 60 /70)JS-S is a high performance, EDO (Extended , , single-in-line memory module (SIMM) package. The module utilizes sixteen, Fujitsu MB814405C-( 60 /70)PJ CMOS 1 Mx4 , control is possible. Features · · · High Density: 8MByte Fast Access Time of 60 /70 ns (max.) Low Power: Active ( 60 /70ns) 4.0W / 3.4W (max.) 176mW (max.) - Standby (TTL) 88mW (max.) - Standby (CMOS) ·


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PDF ESA2UN3241- 32bits, 72-pin, MB814405C- 60/70ns)
1996 - mb87020

Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB506 ULTRA HIGH FREQUENCY PRESCALER MB3776A mb501l
Text: Time Max Organization (ns) MB81C1000A - 60 -70 1M CMOS DRAM FPM* 1M x 1 MB81C4256A - 60 -70 1M CMOS DRAM FPM* 256K x 4 MB814400D - 60 -70 4M CMOS DRAM FPM* 1M x 4 MB814100C - 60 -70 - 60 -70 4M CMOS DRAM FPM* 4M CMOS DRAM FPM* 4M x 1 MB81V4100C - 60 -70 4M CMOS DRAM FPM* MB814405C - 60 -70 MB81V4405C - 60 -70 - 60 -70 - 60 -70 MB814400C MB814260 MB81V4260S Cycle Time Min (ns) 1 Megabit 60 110 70 125 60 70 110


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PDF SD-SG-20342-9/96 mb87020 tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB506 ULTRA HIGH FREQUENCY PRESCALER MB3776A mb501l
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