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MB814400D-60/MB814400D-70 Datasheets Context Search

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1991 - 814400d

Abstract: MB814400D-60
Text: 4 BIT FAST PAGE MODE DYNAMIC RAM MB814400D-60 /- 70 CMOS 1,048,576 × 4 bit Fast Page Mode Dynamic , MB814400D-60 MB814400D-70 RAS Access Time 60 ns max. 70 ns max. CAS Access Time 15 ns max , / Lineup / Index MB814400D-60 / MB814400D-70 Fig. 1 ­ MB814400D DYNAMIC RAM - BLOCK DIAGRAM RAS , °C To Top / Lineup / Index MB814400D-60 / MB814400D-70 s FUNCTIONAL OPERATION ADDRESS INPUTS Twenty , permitted. 5 To Top / Lineup / Index MB814400D-60 / MB814400D-70 s DC CHARACTERISTICS (Recommended


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PDF DS05-10164-3E MB814400D-60/-70 MB814400D 024-bits F9607 814400d MB814400D-60
814400d

Abstract: MB814400D
Text: . MB814400D-60 60 ns max. 15 ns max. 30 ns max. 110 ns min. 40 ns min. 605 mW max. MB814400D-70 70 , to this high impedance circuit. 1 MB814400D-60 / MB814400D-70 ABSOLUTE MAXIMUM RATINGS (See , MB814400D-xxPJN 2 MB814400D-60 / MB814400D-70 Fig. 1 - MB814400D DYNAMIC RAM -BLOCK DIAGRAM A2 A3 A4 A5 , MB814400D-60 / MB814400D-70 PIN ASSIGNMENTS AND DESCRIPTIONS 26-Pin SOJ: (Top View) DQi : DQ2 [ W EE , with a pulse width not exceeding 20 ns are acceptable. 4 MB814400D-60 / MB814400D-70 FUNCTIONAL


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PDF MB814400D 024-bits F9703 814400d
Not Available

Abstract: No abstract text available
Text: February 1996 Edition 3.0 PRODUCT PROFILE SHEET FUJITSU = MB814400D-60 /- 70 CMOS 1 M X 4 , Parameter MB814400D-60 MB814400D— 70 60ns max. 15ns max. 30ns max. 110ns min. 40ns min , – Edition 3.0 MB814400D-60 MB814400D-70 PIN ASSIGNMENTS AND DESCRIPTIONS 26-Pin SOJ: (TOP VIEW , › Edition 3.0 MB814400D-60 MB814400D-70 FUNCTIONAL OPERATION ADDRESS INPUTS Twenty input bits are , permitted. 4 374T75b QGlfiSEfi 1T4 Edition 3.0 MB814400D-60 MB814400D-70 DC CHARACTERISTICS


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PDF MB814400D-60/-70 MB814400D 024-bits 374175b MB814400D-60 MB8144000-70 26-LEAD
814400d

Abstract: No abstract text available
Text: April 1994 Edition 1.0 DATA SHEET FUJITSU MB814400D-60 /- 70 CMOS 1 M X 4 BIT FAST PAGE MODE , FU JITSU LIM ITE D 1 MB814400D-60 MB814400D-70 Fig. 1 - MB814400D DYNAMIC RAM - BLOCK , 7 7 Unit pF PF PF - - 2 MB814400D-60 MB814400D-70 PIN ASSIGNMENTS AND , combinations of read, write, and/or read-modify-write cycles are permitted. 4 MB814400D-60 MB814400D-70 , ; CAS-before-RAS; tRC = min 110 - 100 mA 0 5 MB814400D-60 MB814400D-70 AC CHARACTERISTICS (At


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PDF MB814400D-60/-70 MB814400D 024-bits JV0030-944J1 814400d
DZU 41

Abstract: MB8144
Text: ,121 1 10 I - 60 15 30 - - 15 50 - 70 20 35 - - 15 50 - 100000 - r a i ra n tCAC , 37 38 95 45 55 10 - - 60 10 39 6 MB814400D -60L MB814400D -70L AC , 70ns versiop^ J 70 60 50 / / 60ns Version L r i 20 Ii 111 i 40 60 * RCD I 10 , 120 1% 60 r i i i 10 20 I I I 50 lr 60 30 40 t cp (ns) 9 MB814400D , MODE DYNAMIC RAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400D is a fully


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PDF 14400D-60U-70L MB814400D 024-bits can00D-70L JV0037-946J1 DZU 41 MB8144
1994 - CMOS Dynamic RAM 1M x 1

Abstract: dram 4bit Dynamic RAM
Text: April 1994 Edition 1.0 DATA SHEET MB814400D-60 /- 70 CMOS 1M X 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400D is a fully decoded CMOS Dynamic RAM (DRAM) that contains 4,194,304 memory cells accessible in 4­bit increments. The MB814400D , . Plastic SOJ Package (LCC­26P­M04) PRODUCT LINE & FEATURES Parameter MB814400D­60 MB814400D­70 , within the same row can be selected. The MB814400D DRAM is ideally suited for mainframe, buffers


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PDF MB814400D-60/-70 MB814400D 300mil) CMOS Dynamic RAM 1M x 1 dram 4bit Dynamic RAM
1996 - 814400

Abstract: MB814400D-60 814400d
Text: February 1996 Edition 3.0 PRODUCT PROFILE SHEET MB814400D-60 /- 70 CMOS 1M X 4 BIT FAST PAGE , . Plastic SOJ Package (LCC­26P­M04) PRODUCT LINE & FEATURES Parameter MB814400D­60 MB814400D­70 , CDQ - 7 pF Edition 3.0 MB814400D­60 MB814400D­70 PIN ASSIGNMENTS AND DESCRIPTIONS , are acceptable. 3 MB814400D­60 MB814400D­70 Edition 3.0 FUNCTIONAL OPERATION ADDRESS , , write, and/or read­modify­write cycles are permitted. 4 Edition 3.0 MB814400D­60 MB814400D­70


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PDF MB814400D-60/-70 MB814400D 814400 MB814400D-60 814400d
Not Available

Abstract: No abstract text available
Text: MODE DYNAMIC RAM MB814400D-60 /- 70 CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM ■DESCRIPTION , MB814400D-70 RAS Access Time 60 ns max. 70 ns max. CAS Access Time 15 ns max. 20 ns max , . 3 7 4 cJ 7 S b DDEbDBE 134 MB814400D-60 / MB814400D-70 ■ABSOLUTE MAXIMUM RATINGS (See , G7Q 1 MB814400D-60 / MB814400D-70 Fig. 1 - MB814400D DYNAMIC RAM - BLOCK DIAGRAM — N . DQ1 , Capacitance, DQi to DQ4 Cdo — 7 PF 3 374S7Sb DDHbD34 TD7 MB814400D-60 / MB814400D-70


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PDF DS05-10164-3E MB814400D-60/-70 MB814400D 024-bits MB814400D-60 MB814400D-70 MB814400D-60/MB814400D-70
Not Available

Abstract: No abstract text available
Text: current (Average Power supply current) MB814400D-60 bQ(L) -1 0 - 10 110 Icci MB814400D-70 TTL level CMOS level MB814400D-60 ICC3 MB814400D-70 MB814400D-60 bc4 MB814400D-70 'CC2 [I] Standby , current) MB814400D-60 bc5 MB814400D-70 [I] RAS cycling; CAS-before-RAS; tRC= min 110 - - 100 , 30 - - - - - - 60 15 30 - - 15 50 - 125 175 - - - 0 0 - 2 45 70 20 5 20 20 70 10 0 10 0 15 15 35 35 0 0 0 0 10 10 20 20 0 15/18 95 45 60 10 16.4 - - 70 20 35 - - 15 50 - 100000


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PDF 4400D-60/-70 MB814400D 024-bits
1996 - MB814260

Abstract: 4MX1 MB814100D MB814400A MB814405C MB814405D 407K
Text: Fujitsu Microelectronics, Inc. offers a wide variety of Random Access Memory products. The Asynchronous DRAM product line offers densities ranging from 1 megabit through 16 megabit and with a wide variety of organizations and options. 4 Mbit Density 1M x 4 380k (1Mx4 Fast Page Mode, 5V) MB814400A Not recommended for new design. DATA SHEET EDITION 1.0 292k (1Mx4 Fast Page Mode, 5V) MB814400D Not recommended for new design. DATA SHEET EDITION 3.0 349k (1Mx4 Fast Page Mode, 5V


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PDF MB814400A MB814400D MB814400C MB814405C MB814405D MB81V4405C 81V4405C MB814100A MB814100D MB814100C MB814260 4MX1 MB814100D MB814400A MB814405C MB814405D 407K
1998 - 3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram mb814400a-70 MB81G83222-008 4464 ram
Text: 297 MB814400C-60L 60 [15]*1 110 336 MB814400C-70L 70 [20]*1 125 297 MB814400D-60 60 [15]*1 110 605 MB814400D-70 70 [20]*1 125 550 MB814400D -60L 60 [15]*1 110 605 MB814400D -70L 70 [20]*1 125 550 MB814405C- 60 60 [35]*2 104 336 MB814405C- 70 , from 60 ns. L from 60 ns. Self-refresh MB814400D L from 60 ns. MB814405C L from , 1M×32 2M×32 32M-bit 64M-bit Fast page mode MB85343C 60 ns 70 ns. MB814405C


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PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram mb814400a-70 MB81G83222-008 4464 ram
1996 - mb87020

Abstract: tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB506 ULTRA HIGH FREQUENCY PRESCALER MB3776A mb501l
Text: Time Max Organization (ns) MB81C1000A - 60 - 70 1M CMOS DRAM FPM* 1M x 1 MB81C4256A - 60 - 70 1M CMOS DRAM FPM* 256K x 4 MB814400D - 60 - 70 4M CMOS DRAM FPM* 1M x 4 MB814100C - 60 - 70 - 60 - 70 4M CMOS DRAM FPM* 4M CMOS DRAM FPM* 4M x 1 MB81V4100C - 60 - 70 4M CMOS DRAM FPM* MB814405C - 60 - 70 MB81V4405C - 60 - 70 - 60 - 70 - 60 - 70 MB814400C MB814260 MB81V4260S Cycle Time Min (ns) 1 Megabit 60 110 70 125 60 70 110


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PDF SD-SG-20342-9/96 mb87020 tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM prescaler fujitsu mb506 MB506 ULTRA HIGH FREQUENCY PRESCALER MB3776A mb501l
AUO-PL321.60

Abstract: HY514260 HY514264 HY51V18164B
Text: HY51V4100BSLR SPEED(ns) 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 FEATURES F/P F/P, L-part F/P F/P, L-part F/P


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PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY514260 HY514264 HY51V18164B
r4kf

Abstract: HY53C464LS fr4k HY531000J HY53C256LS
Text: /100 70 /80/100 70 /80/100 70 /80/100 70 /80/100 70 /80/100 60 / 70 /80 60 / 70 /8C 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 70 /80/100 70 /80/100 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 F/P F/R L-part F/P F/R L-oart F/P F/R L-part


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PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J
HY51V18164

Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Text: 45/50/ 60 45/50/ 60 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 FEATURES FP FP, L-part FP FP, L-part FP, SL-part EDO, 2/CAS EDO, 2/CAS, L-part EDO, 2


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PDF 256Kx4) 256x8) 128Kx16) HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY51V18164 HY5118164 HY514260 HY51V65400 HY51V17804CJ
GM71C18160AJ7

Abstract: GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
Text: GM71C4256BZ- 60 I GM7IC42Î6BL- 60 GM71C4256BU- 60 GM 71C4256BLZ-60 70ns ZZH H h GM71C1000B- 70 , [ GM71C4100BLR- 60 I GM71C4100CJ- 60 GM71C4100CZ- 60 GM71C4100CT- 60 GM71C4I00CR-6O GM71C4100BJ- 70 GM71C4100BZ- 70 , V4100BR- 60 UH *GM7I V4100BZ- 70 ZH *GM71V4100BZ-80 ~| |- | »QM 71V4I00BT-70 ~|- , V4I00BLT- 60 GM71V4100BLR- 60 70ns ~|- | »GM7IV41Q0BIJ- 70 ~ ] - | *GM71 V4100BLZ- 70 ~|- | *GM71 V4100BLT- 70 , GM71C4400BR- 60 GM71C4400BU- 60 GM71C4400BLZ-^0 GM71C4400BLT- 60 GM7 i C4400BLR- 60 GM71C4400BJ- 70 ~|-


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PDF GM71C1000B-60 GM71C 1OO0BJ-60 1000BZ-60 100OBL-6O 1000BLJ-60 GM71C1000BLZ-60 GM71C18160AJ7 GM71C4260AJ70 GM71C4400BJ60 GM71C4400BJ70 gm71c4100cj60 GM71C1000BJ70 GM76C256ALL-70 GM76C256BLLFW70 GM71C4100BJ70 GM76C88ALFW15
1MX16

Abstract: KMM5324104BK KMM5321200B
Text: Bated DRAM 1 - Refresh cycte/ms r 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 50/ 60 / 70 60 / 70 60 / 70 50/ 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 750 750 750 750 750 750 750 750 750 750 1,000 750 750 1,000 750 750 750 750 1,000 1,000 1,000 1 , / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60 / 70 60


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PDF 1Mx32 KMM5321200AW/AWG KMM5321200BW/BWG KMM5321204AW/AWG KMM5321204BW/BWG 1Mx36 M15361203A 1Mx16, 1Mx16 16Mx4, 1MX16 KMM5324104BK KMM5321200B
GM71C4400BJ70

Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Text: 1OOOB1J-60 GM71C1000BLZ- 60 > - OEGM 71C1000BI.-70 1 - G M 71C 1000B U - 70 GM71CIOO0BI.Z- 70 256Kx4 GM71C4256B- 60 GM71C4256B- 70 - 1 G M 71C4256B-80 ÜM71C4256BJ- 60 CiM71C4256B/.- 60 GM71C4256B1.- 60 G M 71C 4256B IJ- 60 G M 7 104 2 5 6 8 1 ^-6 0 HK H ü M71C4256BJ- 70 GM71C42S6BZ- 70 HK h , ] 0OBJ-60 ·GM7] V4100BZ- 60 ·GM71V4100BT- 60 *GM7I V4100BR- 60 K K ~ ]- 70ns (ÌM71C4I00CIJ- 70 GM71C4100CLZ- 70 , ·GM71V4100BI.T- 60 ·GM71V4100BI.R- 60 70ns *GM71V4100BI J- 70 *GM71V4100BL7.- 70 ·GM71V4100B1.T- 70 ·GM71V4100BI.R-770


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PDF 71C1000B-70 1OOOBJ-70 71C1000BZ-70 71C1000B-80 1OOOBJ-80 71C1000BZ-80 71C1000BL-80 1000B I000H GM71C1000B-60 GM71C4400BJ70 GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
SIMM 1Mx9 30pin

Abstract: simm EDO 72pin KMM51442100ATG KMM532
Text: , ECC Quad CAS F/P notch: 125mil F/P F/P double notch double notch double notch 60 / 70 /80 60 / 70 /80 60 / 70 /80 60 / 70 /80 50/ 60 / 70 /80 60 / 70 /80 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 50/ 60 / 70 /80 S, 30pm SIMM S, SOpin SIMM S, 30pin SIMM S, 30pin SIMM S, 72pin SIMM D, 72pin SIMM , 512KX36 KMM532256AW/AWG KMM536256AW/AWG KMM532512AW/AWG KMM536512AW/AWG F/P F/P F/P F/P 60 / 70 /80


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PDF 1Mx32 1Mx33 1Mx36 KMM581000CN KMM5B1020CN KMM591000CN KMM591020CN KMM5321000CV/CVG KMM5331000C/CG KMM5361000C2/C2G SIMM 1Mx9 30pin simm EDO 72pin KMM51442100ATG KMM532
GM76C256all

Abstract: GM23C4000 GM23C410 GM23C8001 BFW12 LR-80 GM23C810QA-12 GM76C28A GM23C400 LT-860
Text: 90 eo 70 90 80 70 90 60 70 90 80 70 110 100 90 110 100 90 110 100 90 110 100 90 110 100 90 110 100 90 , Package (m il) Avail 1MBit 1W0 GM71C1000B/BJ/BZ- 60 GM71C10008/BJ/BZ- 70 GM71C 10OÛB/BJ/BZ-ÔO GM71C10006UBLJ/BLZ- 60 GM71C10006UBLJ/BLZ- 70 GM71C10006UBLJ/BLZ-80 60 70 80 60 70 80 60 70 80 60 20 20 25 20 , GM71C4256B/BJ/BZ- 60 GM71C4256B/BJ/BZ- 70 GM71C4256B/BJ/BZ-80 GM71C4256BU8 LJ/BLZ- 60 GM71C42568L/8LJ/BLZ- 70 GM71C42568UBLJ/BLZ-80 4MBit 4Wt1 GM71C4100B J/BZ/BT/BR- 60 GM71C41008J/BZ/BT/BR- 70 GM71C4100BJ/BZ/BT/BR


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PDF GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80 351MxB GM23C8000A/AF 32DIP 32SOP GM76C256all GM23C4000 GM23C410 GM23C8001 BFW12 LR-80 GM23C810QA-12 GM76C28A GM23C400 LT-860
Hyundai 2MX32 EDO simm module

Abstract: HYM532814 HYM53681 HYM5V72A3204
Text: /CEG 60 / 70 /80 6G/7Q/80 60 / 70 /80 60 / 70 /80 50/ 60 / 70 50/ 60 / 70 60 / 70 /80 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 1K 1K 2K 2K 2K 2K 2K 2K 2K 2K 2K 2K 5V 5V 5V 5V 5V 5V 5V 5V 5V 5V 5V 5V NOW , HYM536A414CM/CMG NOW SIMM HYM53281OAM/AMG HYM53281 OCM/CMG 50/ 60 / 70 50/ 60 / 70 60 / 70 /80 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 50/ 60 / 70 2K 2K 2K 2K 2K 2K 2K 2K 2K 5V 5V 5V 5V 5V 5V 5V 5V 5V , 16MX36 FP FP (Parity) 16Mx1 HYM5321600AM/AMG HYM5361600AM/AMG 50/ 60 / 70 50/ 60 / 70 4K 4K


OCR Scan
PDF 1Mx16 2Mx32 HYM532224AW/AWG HYM532224CW/CWG HYM532214AE/AEG HYM532214CE/CEG 6G/7Q/80 HYM53241OAM/AMG HYM53241OCM/CMG 4Mx32 Hyundai 2MX32 EDO simm module HYM532814 HYM53681 HYM5V72A3204
2010 - b0725

Abstract: 2SC2576 BU4090 2S01467 2S0141 2S0323 bu407F
Text: 60 60 70 70 70 70 ~g 100 100 120 140 2.0k 2.0k 2.0k 2.0k 20 25 25 45 45 50 10 15 15 20 120 120 , 500n ~g 60 63 63 60 150 60 40 60 36 60 60 70 50 50 60 40 60 40 ~:g j 140 J 125 J 125 J 125 J , 2SC519A 250116 2SC19A B0725 2S01163 2S0566 2SC2466 2S01110 2N6704 70 ~~~~~ 75 60 Solid , 40 40 40 40 40 50 50 60 60 60 60 60 60 60 70 2.0k 2.0k 15 15 20 30 30 20 25 40 40 40 20 40 60 40 , 100 100 100 100 100 100 100 100 100 100 100 110 110 110 ~g 60 60 60 40 40 40 70 60 ~:g j 140 J


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PDF 2S01467 BU407F BU407H BU4090 BU409 BU407 2SC3590 2SC3173 b0725 2SC2576 2S0141 2S0323 bu407F
1998 - 4Mx4 dram simm

Abstract: TTP32 SIMM72 dram card 60 pin 334k 4Mx8 dram simm 4MX16* dram fpm 8KX8 32MByte TTP42
Text: , 4k refresh, unbuffered HB56A1632 64MByte MOD FPM_Module 16Mx32 70 ; 60 ; 50 SIMM-72 5.0 no HB56A1636 64MByte MOD FPM_Module 16Mx32 50; 60 ; 70 SIMM-72 5.0 1 bank, 4k refresh HB56A264EJ 16MByte MOD FPM_Module 2Mx64 50; 60 ; 70 DIMM , FPM_Module 4Mx32 60 ; 70 SIMM-72 5.0 unbuffered, 2k refresh, low power version HB56A440BR 16MByte MOD FPM_Module 4Mx40 50; 60 ; 70 SIMM-72 5.0 1 bank, 4k refresh HB56A441BR


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PDF ATA-68 CF-50 15MByte HB286015C3 HB286030A3 30MByte 4Mx4 dram simm TTP32 SIMM72 dram card 60 pin 334k 4Mx8 dram simm 4MX16* dram fpm 8KX8 32MByte TTP42
2010 - 80244C

Abstract: RCA1C11 2S8754 mj04 2S8999 BOT42C 2S8553
Text: 40 60 60 60 70 70 70 70 70 70 70 120 20 15 15 15 12 12 12 12 12 12 15 15 15 15 15 15 15 20 25 25 40 , 700n 65 65 65 65 20 20 2.0 50 150 5.0 70 60 50 65 65 150 5.0 70 70 4 40 150 65 65 5.0 65 65 1.0 1.0 65 , 30 40 40 40 40 40 150 40 40 30 30 30 70 70 70 40 50 50 40 40 150 60 40 60 40 30 40 40 40 40 60 40 50 , Index Sanken Elec See Index See Index 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 100 100 100 100 100 100 100 100 100 100 100 100 100 120 120 120 120 120 120 120 140 140


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2010 - 2SD568L

Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
Text: 70 70 70 70 70 70 50 50 50 50 50 50 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 150 25 25 , 50 35 35 60 30 30 30 30 30 30 30 36 36 40 40 40 40 60 60 60 70 70 40 5 0k 5 0k 100 100 2 0k 35 70 70 100 100 140 140 20 20 40 60 100 2 0k 20 20 25 25 20 20 20 20 20 20 30 30 30 30 30 70 70 70 12 80 20 60 60 70 70 10M 10M 10M 15M 20M 20M 40M 150M 15M 100M 100M 100M 100M 100M 100M 3 0M 3 0M 1 0m 01m 01m , 10 2SB999 PNP 70 60 30 20k 100u 15 20 BD720 60 60 60 60 60 60 60 60


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PDF 2SA1185 2SB827 2SD1063 2SB754 2SD844 ET1551 2SB1224 2SD1626 2SA1442 2SC3692 2SD568L idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K
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