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MB814400A-70PJ FUJITSU Limited Bristol Electronics 56 - -
MB814400A-70PZ FUJITSU Limited Bristol Electronics 2,848 - -
MB814400A-70PZ-G-JK-RF FUJITSU Limited Bristol Electronics 2,668 - -
MB814405D-60PJN FUJITSU Component Ltd Master Electronics 16 - -

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MB8144 datasheet (79)

Part Manufacturer Description Type PDF
MB814400 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
MB814400-10 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
MB814400-10LP Fujitsu CMOS 1 M x 4 BIT FAST PAGE MODE DRAM Scan PDF
MB814400-10LP Fujitsu CMOS 1M x 4 BITS FAST PAGE MODE DYNAMIC RAM Scan PDF
MB814400-10LPJ Fujitsu CMOS 1 M x 4 BIT FAST PAGE MODE DRAM Scan PDF
MB814400-10LPJ Fujitsu CMOS 1M x 4 BITS FAST PAGE MODE DYNAMIC RAM Scan PDF
MB814400-10LPJN Fujitsu CMOS 1 M x 4 BIT FAST PAGE MODE DRAM Scan PDF
MB814400-10LPJN Fujitsu CMOS 1M x 4 BITS FAST PAGE MODE DYNAMIC RAM Scan PDF
MB814400-10LPSZ Fujitsu CMOS 1 M x 4 BIT FAST PAGE MODE DRAM Scan PDF
MB814400-10LPSZ Fujitsu CMOS 1M x 4 BITS FAST PAGE MODE DYNAMIC RAM Scan PDF
MB814400-10P Fujitsu CMOS 1 M x 4 BIT FAST PAGE MODE DRAM Scan PDF
MB814400-10P Fujitsu CMOS 4,194,304 BIT FAST PAGE MODE DYNAMIC RAM Scan PDF
MB814400-10PJ Fujitsu CMOS 1 M x 4 BIT FAST PAGE MODE DRAM Scan PDF
MB814400-10PJ Fujitsu CMOS 4,194,304 BIT FAST PAGE MODE DYNAMIC RAM Scan PDF
MB814400-10PJN Fujitsu CMOS 1 M x 4 BIT FAST PAGE MODE DRAM Scan PDF
MB814400-10PJN Fujitsu CMOS 4,194,304 BIT FAST PAGE MODE DYNAMIC RAM Scan PDF
MB814400-10PSZ Fujitsu CMOS 1 M x 4 BIT FAST PAGE MODE DRAM Scan PDF
MB814400-10PSZ Fujitsu CMOS 4,194,304 BIT FAST PAGE MODE DYNAMIC RAM Scan PDF
MB814400-12 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
MB814400-12LP Fujitsu CMOS 1 M x 4 BIT FAST PAGE MODE DRAM Scan PDF

MB8144 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
RCD 2226

Abstract: No abstract text available
Text: are acceptable. 2-209 MB814400-80 MB814400-10 MB814400-12 FUNCTIONAL OPERATION ADDRESS , ready-modify-write cycles are permitted. 2-210 MB814400-80 MB814400-10 MB814400-12 DC CHARACTERISTICS , j M B814400-10 MB814400-12 2-211 MB814400-80 MB814400-10 MB814400-12 AC CHARACTERISTICS , MB814400-80 MB814400-10 MB814400-12 AC CHARACTERISTICS No, 35 36 37 38 39 40 41 42 43 44 45 46 50 51 52 , . Assuemes thati)A S -before-ftA S refresh. 2-213 MB814400-80 MB814400-10 MB814400-12 Fig. 2 - t f


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PDF MB814400 MBS14400 024-bits Q11S-1C MB814400-80 MB814400-10 MB814400-12 RCD 2226
1997 - MB814405C

Abstract: mb814405c-60
Text: , order as MB814405C-xxPFTN 2 To Top / Lineup / Index MB814405C-60 / MB814405C-70 Fig. 1 ­ , impedance circuit. To Top / Lineup / Index MB814405C-60 / MB814405C-70 s ABSOLUTE MAXIMUM RATINGS (See , / Index MB814405C-60 / MB814405C-70 s PIN ASSIGNMENTS AND DESCRIPTIONS 26-Pin SOJ: (TOP VIEW) MB814405C-60 / MB814405C-70 , MB814405C-60 / MB814405C-70 HYPER PAGE MODE OPERATION The hyper page mode operation provides faster memory


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PDF DS05-10181-3E MB814405C-60/-70 MB814405C F9703 mb814405c-60
1998 - 3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram mb814400a-70 MB81G83222-008 4464 ram
Text: 297 MB814400C-60L 60[15]*1 110 336 MB814400C-70L 70[20]*1 125 297 MB814400D-60 , 605 MB814400D-70L 70[20]*1 125 550 MB814405C-60 60[35]*2 104 336 MB814405C-70 , 605 MB814400A-70 70[20]*1 125 550 MB814400A-60L 60[15]*1 110 605 MB814400A-70L , 297 MB814405D-60 60[35] 105 495 MB814405D-70 70[35] 125 413 MB814405D-60L , Capacity Package MB85344C 60 ns 70 ns. MB814405C×16 Type Mounted Devices MB814400C×8


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PDF 16M-bit 64M-bit 68-pin) 88-pin) MB98C81013-10 MB98C81123-10 MB98C81233-10 MB98C81333-10 3654P DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram mb814400a-70 MB81G83222-008 4464 ram
1997 - ESA2UN3241-60JS-S

Abstract: 1MX4
Text: July 1997 Revision 1.0 data sheet ESA2UN3241-(60/70)JS-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN3241-(60/70)JS-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. The module utilizes sixteen, Fujitsu MB814405C- (60/70)PJ CMOS 1Mx4 EDO dynamic RAM in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a decoupling


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PDF ESA2UN3241- 32bits, 72-pin, MB814405C- 60/70ns) MP-DRAMM-DS-20547-7/97 ESA2UN3241-60JS-S 1MX4
1996 - MB814405C

Abstract: DS05
Text: MB814405C-60 MB814405C-70 RAS Access Time 60ns max. 70ns max. CAS Access Time 15ns max , PRELIMINARY ­ Edition 2.2 MB814405C-60 MB814405C-70 Fig. 1 ­ MB814405C DYNAMIC RAM ­ BLOCK DIAGRAM , PRELIMINARY ­ Edition 2.2 MB814405C-60 MB814405C-70 PIN ASSIGNMENTS AND DESCRIPTIONS 26­Pin SOJ , MB814405C-60 MB814405C-70 RECOMMENDED OPERATING CONDITIONS Notes Parameter Typ Max 4.5 , ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ­ PRELIMINARY ­ Edition 2.2 MB814405C-60 MB814405C-70 DC CHARACTERISTICS (Recommended


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PDF MB814405C-60/-70 MB814405C DS05
1996 - 814400

Abstract: MB814400D-60 814400d
Text: . Plastic SOJ Package (LCC­26P­M04) PRODUCT LINE & FEATURES Parameter MB814400D­60 MB814400D­70 , CDQ - 7 pF Edition 3.0 MB814400D­60 MB814400D­70 PIN ASSIGNMENTS AND DESCRIPTIONS , are acceptable. 3 MB814400D­60 MB814400D­70 Edition 3.0 FUNCTIONAL OPERATION ADDRESS , , write, and/or read­modify­write cycles are permitted. 4 Edition 3.0 MB814400D­60 MB814400D­70 , = min - - 55 mA 50 MB814400D­70 Refresh current MB814400D­60 #2 (Average power


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PDF MB814400D-60/-70 MB814400D 814400 MB814400D-60 814400d
M72010

Abstract: MB85342A-70
Text: decoded, CMOS dynamic random access memory (DRAM) module consisting of sixteen MB814400A devices. The , storage. The operation and electrical characteristics of the MB85342A are the same as the MB814400A which , MB85342A-xxPJPBK (PJPBK = Gold Pad) · Organization : 2,097,152 words x 32 bits · Memory : MB814400A , 16pcs · , · * Source: See MB814400A Data Sheet for details on the electricals. 5 MB85342A


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PDF MB85342A-60/-70/-80 MB85342A MB814400A 72-pad JV0020-942J1 M72010 MB85342A-70
MB814405D

Abstract: No abstract text available
Text: MB814405D-xxLPJN (Low Power) 2 MB814405D-60 /60L/-70/70L Fig. 1 - MB814405D DYNAMIC RAM-BLOCK DIAGRAM ras cas , *2 Supply Current) MB814405D-60 |cc3 CAS = ViH, RAS cycling; trc = min — — 90 mA MB814405D-70 , MB814405D-70 65 Refresh Current #2 (Average Power *2 Supply Current) MB814405D-60 |cc5 RAS cycling , ) MB814405D-60 |cc9 RAS = CAS < 0.2 V Self refresh — — 1000 300 (iA MB814405D-70 1000 300 7 , noted.) Notes 3,4,5 No. Parameter Notes Symbol MB814405D-60 MB814405D-70 Unit Min. Max. Min. Max


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PDF MB814405D-60/60L/-70/70L MB814405D 26-LEAD LCC-26P-M04) 008-oo1 C26054S-3C-1
Not Available

Abstract: No abstract text available
Text: is a fully decoded, CMOS dynamic random access memory (DRAM) module consisting of sixteen MB814405C , the MB814405C which features hyper page mode operation providing extended valid time for data output , Information: ^¡L e i3 S J •Memory : MB814405C , 16pcs MB85344C-xxPJPBK (PJPBK = Gold Pad , test mode function. *Source: See MB814405C Data Sheet for details on the electricals. MB85344C


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PDF MB85344C-60/-70 MB85344C MB814405C B85344C 024-bit MB8534S 72050S-1C
Not Available

Abstract: No abstract text available
Text: is a fully decoded, CMOS dynamic random access memory (DRAM) module consisting of eight MB814405C , MB814405C which features hyper page mode operation providing extended valid time for data output and higher , Information: • Memory : MB814405C , 8 pcs 72-pad SIMM, order as M B85343C -xx PJ PBK • Decoupling , test mode function. *Source: See MB814405C Data Sheet for details on the electricals. MB85343C


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PDF MB85343C-60/-70 MB85343C MB814405C 32bits M72049S-1C
MB85303

Abstract: No abstract text available
Text: February 1993 Edition 1.0 DATA SHEET FUJITSU MB85303A-60/-70/-80 CMOS 1M x 8 Fast Page Mode DRAM Module CMOS 1,048,576 x 8 Bit Fast Page Mode DRAM Module The Fujitsu MB85303A is a fully decoded CMOS Dynamic Random Access Memory (DRAM) Module consisting of two MB814400A devices. The MB85303A , characteristics of the MB85303A are the same as the MB814400A devices which feature Fast Page operation. For ease , Organization: 1,048,576 words x 8 bits · Memory: MB814400A , 2 pcs · Decoupling Capacitor: 0.22 (IF, 2 pcs


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PDF MB85303A-60/-70/-80 MB85303A MB814400A 576-word 30-pad MSS-30P-P08 MB85303
MB814400A-70L

Abstract: mbs14
Text: TTL compatible · 1024 refresh cycles every 128ms MB81440QA-60L MB814400A-70L MB814400A-80L 60ns max , Time CAS Pulse width RAS Hold Time ' Symbol tpC A C fcah MB8144Q0A-6OL MB814400A-70L MB814400A-80L , 5 MB814400A-60L MB814400A-70L MB814400A-80L Rg. 1 - MB814400A DYNAMIC RAM - BLOCK DIAGRAM , 3 7 M cl 7 S b OODf lb' ia T il MB814400A-60L MB814400A-70 L MB814400A-80L PIN ASSIGNMENTS , t4c 57Sb OOf l b ' l S A ll MB814400A-60L MB814400A-70L MB814400A-80L DC


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PDF MB8144 OA-60U-70U-80L MB814400A 024x4-bits MB814400A-60L/-70L/-80L MB814400A-ted SD-08287-001 MB814400A-70L mbs14
Not Available

Abstract: No abstract text available
Text: and/or auxiliary power. The MB814400 is fabricated using silicon gate C M O S and Fujitsu's advanced


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PDF MB814100-80L/-10L/-12L MB814100 048-bits FPT-26P-M01 FPT-26P-M02
Not Available

Abstract: No abstract text available
Text: . 22 374175b 0 0 1 0 5 4Li 1 1 T Edition 3.0 MB814400D-60 MB8144000-70 PACKAGE , Parameter MB814400D-60 MB814400D— 70 60ns max. 15ns max. 30ns max. 110ns min. 40ns min , – Edition 3.0 MB814400D-60 MB814400D-70 PIN ASSIGNMENTS AND DESCRIPTIONS 26-Pin SOJ: (TOP VIEW , › Edition 3.0 MB814400D-60 MB814400D-70 FUNCTIONAL OPERATION ADDRESS INPUTS Twenty input bits are , permitted. 4 374T75b QGlfiSEfi 1T4 Edition 3.0 MB814400D-60 MB814400D-70 DC CHARACTERISTICS


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PDF MB814400D-60/-70 MB814400D 024-bits 374175b MB814400D-60 MB8144000-70 26-LEAD
814400a

Abstract: MB814400A
Text: G0D53b0 0SÖ 374*i75Li MB814400A-60 MB814400A-70 MB814400A-80 Fig. 1 - MB814400A DYNAMIC RAM - , 7 7 Unit pF pF pF 1-206 37M c i 75b 00D 53bl T T M MB814400A-60 MB814400A-70 MB814400A-80 , 1-207 374^75ti D Ü G S 3L 2 T2D MB814400A-60 MB814400A-70 MB814400A-80 RECOMMENDED OPERATING , MB814400A-60 MB814400A-70 MB814400A-80 AC CHARACTERISTICS (At recommended operating conditions unless , PC - - 1-210 374^751, 0QQS3bS b3T MB814400A-60 MB814400A-70 MB814400A-80 AC


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PDF 4400A-60/-70/-80 14400A 024-b 14400Ain F26001S MB814400A-60 MB814400A-70 MB814400A-80 814400a MB814400A
MCM54400A

Abstract: SJ08 mn414400asj KM44C1002A-7 KM44C1010A-10 KM44C1000ASL-10 MN414400 ci 555 20PIN MCM514400-80
Text: 80 140 20 80 5D 140 15 195 4. 5—5. 5 95 1.0/- 0.8 2.4 7 0. 4/4. 2 2.4/5 7 IK/16 MB814400-10 , MB814400-10 FUJITSU 0-70 100 180 25 20 70 180 20 245 4. 5—5. 5 0.8 2.4 5 0.4/4. 2 2.4/5 6 1K/1B MB814400-12 FUJITSU 0—70 120 210 25 20 80 210 20 245 4. 5—5.5 55 2.0/1.0 0.8 2.4 5 0. 4/4. 2 2.4/5 E 1K/1S MB814400-12 FUJITSU 0—70 120 210 25 25 80 210 25 280 4. 5-5. 5 0.8 2.4 5 0. 4/4. 2 2.4/5 E 1K/1B MB814400-80 FUJITSU 0—70 80 155 22 15 65 155 15 185 4. 5-5. 5 75 2.0/1. 0 [1.8 2.4 5 0.4/4


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PDF 20PIN USW1S82) KM44C1000ASL-10 IK/256 KM44C1010A-7 IK/16 KK44C1010A-8 KM44C1010A-10 MCM54400A SJ08 mn414400asj KM44C1002A-7 MN414400 ci 555 MCM514400-80
CY2148-45PC

Abstract: CY2147-35PC mb8147 55PC MB8144NL cy21l48-55pc CY2147-55PC 18PIN CY21L47-55PC/DC CY2148-55PC
Text: -45 MITSUBISHI 0—70 450 100 5 50 100 200 200 0 0 0 4. 5—5. 5 65 0.8 2 5 0. 4/2.1 2. 4/1 8 MB8144E FUJITSU 0—70 200 70 20 10 60 100 100 0 0 20 4. 5—5. 5 90 0.8 2 5 0. 4/2 2. 4/0. 2 8 MB8144EL FUJITSU , 300 100 20 10 80 150 150 0 0 0 4. 5—5. 5 70 0.8 2 5 0.4/2 2. 4/0.2 8 MB8144NL FUJITSU 0-70 300


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PDF 4096X1) 18PIN C2147H-3 CY21147-3SPC/DC CY21L47-45PC/DC CY21L47-55PC/Dâ MB8144NL MB8147E MB8147F-35 M88147F-45 CY2148-45PC CY2147-35PC mb8147 55PC cy21l48-55pc CY2147-55PC CY21L47-55PC/DC CY2148-55PC
toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A HITACHI 64k DRAM MB832001 M5M23C400 TC511000 KM41C464 TC51464
Text: MB814100 MB814101 MB814102 MB814400 MB814402 ilP0421000 (iP0421001 MP0421002 /iP0424256 *iP0424258


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PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A HITACHI 64k DRAM MB832001 M5M23C400 TC511000 TC51464
1996 - Not Available

Abstract: No abstract text available
Text: June 1996 Revision 1.0 DATA SHEET FSA2UN3641-(60/70)J(G/S)-S 8MByte (2M x 36) CMOS DRAM Module - ECC General Description The FSA2UN3641-(60/70)J(G/S)-S is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, JEDEC ECC configuration, leadless, single-in-line memory module (SIMM) package. The module utilizes eighteen, Fujitsu MB814400C- (60/70)PJ CMOS 1Mx4 dynamic RAMs in a surface mount package on an epoxy laminate substrate. Each device is accompanied by a


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PDF FSA2UN3641- 72-pin, MB814400C- MP-DRAMM-DS-20316-6/96
1996 - MB814260

Abstract: 4MX1 MB814100D MB814400A MB814405C MB814405D 407K
Text: ) MB814400A Not recommended for new design. DATA SHEET EDITION 1.0 292k (1Mx4 Fast Page Mode, 5V) MB814400D Not recommended for new design. DATA SHEET EDITION 3.0 349k (1Mx4 Fast Page Mode, 5V) MB814400C DATA SHEET EDITION 2.1 407k (1Mx4 EDO Mode, 5V) MB814405C DATA SHEET EDITION 2.2 388k (1Mx4 EDO Mode, 5V) MB814405D DATA SHEET EDITION 1.0 27k (1Mx4 EDO Mode, 3.3V) MB81V4405C For full


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PDF MB814400A MB814400D MB814400C MB814405C MB814405D MB81V4405C 81V4405C MB814100A MB814100D MB814100C MB814260 4MX1 MB814100D MB814400A MB814405C MB814405D 407K
MB814400C-60

Abstract: No abstract text available
Text: (300mil) TSOP-II with reverse bend leads, order as MB814400C-xxPFTR 2 MB814400C-60 / MB814400C-70 , . 5 7 7 Unit pF pF pF 3 MB814400C-60 / MB814400C-70 PIN ASSIGNMENTS AND DESCRIPTIONS 26 , ÜE CÂS Vss 4 MB814400C-60 / MB814400C-70 RECOMMENDED OPERATING CONDITIONS Parameter Supply , of read, write, and/or ready-modify-write cycles are permitted. 5 MB814400C-60 / MB814400C-70 , 10 61 loci MB814400C-70 TT level |C C 2 CMOS level MB814400C-60 Icc3 MB814400C-70 MB814400C-60 |C


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PDF MB814400C 024-bits F9703 MB814400C-60
Not Available

Abstract: No abstract text available
Text: Dynamic Random Access Memory (DRAM) module consisting of eight MB814400C devices. The MB85341C is , operation and electrical characteristics of the MB85341C are the same as the MB814400C which features fast , . 88 mW max. 44 mW max. Organization: 1,048,576 words x 32 bits Memory: MB814400C , 8 pcs Decoupling , MB814400C Data Sheet for details on the electricals. 8 MB85341C-60/-70 PACKAGE DIMENSIONS (Suffix


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PDF MB85341C-60/-70 MB85341C MB814400C 72-pad F9703
nec 424256

Abstract: nec 424100 511000 424256 424256 nec KM41C1000 NEC 421000 m5m44c256 S4C1024 514256
Text: MITSUBISHI OKI FUJITSU SAMSUNG MICRON Tl HYB514400 TC514400 HM 514400 uPD424400 M5M541000 MSM514400 MB814400


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PDF M5M4C1000 MSM511000 MB81C1000 KM41C1000 MT4C1024 S4C1024 M5M44C256 MB81C4256 KM44C256 MT4C4256 nec 424256 nec 424100 511000 424256 424256 nec NEC 421000 514256
sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: M5M44258A 1Mx4 MCM514400 4M 4 MCM514100 1Mx4 MB814400 4 M -4 MB814100 HM511000 HM511001


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PDF A16685-7 EMTR1147 sun hold RAS 0610 oki Logic Motorola transistor 7144 MSC2304 M5M41000
Not Available

Abstract: No abstract text available
Text: July 1993 Edition 1.0 FUJITSU DATA SHEET MB85379A-60/-70/-80 CMOS 2M x 40 Fast Page Mode DRAM Module CMOS 2,097,152 x 40 Bit Fast Page Mode DRAM Module The Fujitsu MB85379A is a fully decoded CMOS Dynamic Random Access Memory (DRAM) Module consisting of twenty MB814400A devices. The , electrical characteristics of the MB85379A are the same as the MB814400A devices which feature Fast Page , ) 1Organization: 2,097,152 words x 40 bits 1Memory: MB814400A , 20 pcs Package and Ordering Information: 72


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PDF MB85379A-60/-70/-80 MB85379A MB814400A 40-bit 72-pad MSS-72P-P1
Supplyframe Tracking Pixel