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Part Manufacturer Description Datasheet Download Buy Part
282807-5 TE Connectivity (282807-5) 3P TERMI-BLOK PLUG,MARKED
7-1571986-2 TE Connectivity (7-1571986-2) A101J1AV2Q004AM marking O -
2238156-1 TE Connectivity (2238156-1) MARK II POSITIVE LOCK 22-18
91592-1 TE Connectivity (91592-1) CERTICRIMP 2 22-18 MIC MARK II
5-2023347-3 TE Connectivity (5-2023347-3) LCEDI UPPER SHELL WITH DATUM MARK PLATED
2-1546857-7 TE Connectivity (2-1546857-7) 3P VERT PLUG,GRAY,MARKED

MARKING HBT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - MARKING HBT

Abstract: SGA-1263 SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
Text: SGA-1263(Z) SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD's SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT ) amplifier , -stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT , PCS bands. Matching® Applied GaAs HBT DCto400MHz Operation Single Supply Voltage Excellent


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PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 MARKING HBT SGA-1263Z trace code marking RFMD SGA1263 18 sot-363 rf power amplifier InP HBT transistor
2006 - SGA-1263Z

Abstract: SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a SGA1263Z
Text: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD's SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT ) amplifier that offers , provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process , ® Applied GaAs HBT DCto4000MHz Operation Single Supply Voltage Excellent Isolation


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PDF SGA1263Z DCto4000MH DCto4000MHz OT-363 SGA1263Z 50GHz DS100916 SGA-1263Z SGA1263ZSQ trace code marking RFMD InP HBT transistor PHEMT marking code a
2006 - trace code marking RFMD

Abstract: SGA-1263 SGA-1263Z
Text: SGA-1263(Z) SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD's SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT ) amplifier , -stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT , PCS bands. Matching® Applied GaAs HBT DCto400MHz Operation Single Supply Voltage Excellent


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PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz DS090924 SGA-1263 trace code marking RFMD SGA-1263Z
2002 - MCH185A101JK

Abstract: ECM011 capacitor 6032
Text: Transistor ( HBT ) process. It is optimized for cellular CDMA (digital) in the 824MHz to 849MHz band. It , .036" x .030" (.91mm x .76mm) Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- , ECM011 XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM SS-000398-000 Revision D EiC Corp , (digital) and AMPS (analog) handset market. The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and


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PDF ECM011 28dBm 16dBm ECM011 824MHz 849MHz AP-000513-000 AP-000516-000 SS-000398-000 MCH185A101JK capacitor 6032
2006 - Not Available

Abstract: No abstract text available
Text: SGA-1163(Z) SGA-1163(Z) DC to 6000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 6000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: SOT-363 Product Description , InGaP HBT GAIN 12 SiGe HBT GaAs pHEMT -10 ORL IRL 8 4 0 0 GaN HEMT , .) Return Loss (dB) GaAs HBT Si BiCMOS DCto 6000MHz Operation Excellent Isolation, >50dB at , -1163(Z) is a SiGe HBT MMIC amplifier that offers excellent isolation and flat gain response for


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PDF SGA-1163 6000MHz, OT-363 850MHz 1950MHz 2400MHz SGA-1163 SGA-1163Z
2006 - trace code marking RFMD

Abstract: BB2Z MARKING RFMD SBB-2089Z SBB2089Z Package Marking BB2Z rfmd model marking code SBB-2089 bb2z marking amplifier rfmd mmic
Text: SBB-2089Z SBB-2089Z 50 MHz to 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50 MHz to 850 MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD's SBB-2089Z is a high performance InGaP HBT MMIC amplifier utilizing a , components. It is internally matched to 50 . Optimum Technology Matching® Applied GaAs HBT GaAs MESFET , Applications InGaP HBT Receiver IF Amplifier Cellular, PCS, GSM, UMTS Wireless Data, Satellite


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PDF SBB-2089Z OT-89 SBB-2089Z EDS-104005 SBB2089Z" trace code marking RFMD BB2Z MARKING RFMD SBB2089Z Package Marking BB2Z rfmd model marking code SBB-2089 bb2z marking amplifier rfmd mmic
2002 - ECM004

Abstract: No abstract text available
Text: was developed using EiC's own InGaP Gallium Arsenide Heterojunction Bipolar Transistor ( HBT ) process , . Package Dimensions TOP VIEW Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- , ECM004 XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM SS-000371-000 Revision E EiC Corp , HBT collector. RF input port connects to internally matched 50 ohm circuit. Ref. Voltage for the , connects to the power amplifier stage HBT collector. RF out is internally matched to 50 ohms and expects a


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PDF ECM004 ECM004 AP-000513-000 AP-000516-000 SS-000371-000
2006 - A11Z

Abstract: trace code marking RFMD SGA-1163Z marking 478 mmic sga1163z SGA-1163 sga-3463 z DS090924 MARKING CODE a11 sot363 MARKING RFMD
Text: SGA-1163(Z) SGA-1163(Z) DC to 6000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 6000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER NOT FOR NEW DESIGNS Package: SOT-363 Product Description , InGaP HBT GAIN 12 SiGe HBT GaAs pHEMT -10 ORL IRL 8 4 0 0 GaN HEMT , ) GaAs HBT Si BiCMOS DCto 6000MHz Operation Excellent Isolation, >50dB at 900MHz Single Supply Voltage Unconditionally Stable Cascadable 50 SI GN S RFMD's SGA-1163(Z) is a SiGe HBT MMIC


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PDF SGA-1163 6000MHz, OT-363 850MHz 1950MHz 2400MHz SGA-1163 SGA-1163Z A11Z trace code marking RFMD SGA-1163Z marking 478 mmic sga1163z sga-3463 z DS090924 MARKING CODE a11 sot363 MARKING RFMD
N6 Amplifier

Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 MMic Marking 3 mmic marking A MMIC N6 MARKING N6 marking n6 amplifier marking N6 mmic MICROWAVE BJT 2GHZ MMIC Amplifier Micro-X
Text: reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications , 0.025 0.190 0.178 Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/ HBT GaN HEMT Package Style: Micro-X, 4-Pin, Plastic GaAs MESFET SiGe Bi-CMOS Features · Reliable, Low-Cost HBT Design · 12.7dB Gain, +12.6dBm P1dB@2GHz · High P1dB of +14.9dBm@6.0GHz and +13.1dBm@10.0GHz GND 4 MARKING - N6 · Single Power Supply Operation · 50 I/O Matched


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PDF NLB-310 10GHz NLB-310 NLB-310-T1 NLB-310-E N6 Amplifier SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 MMic Marking 3 mmic marking A MMIC N6 MARKING N6 marking n6 amplifier marking N6 mmic MICROWAVE BJT 2GHZ MMIC Amplifier Micro-X
N4 MMIC

Abstract: marking n4 mmic N4 Amplifier mmic marking A MICROWAVE BJT 2GHZ NLB-400-E MMIC Amplifier marking A MMic Marking 3 GaAs Amplifier Micro-X Marking A Cascadable SiGe HBT MMIC Amplifier
Text: reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications , 0.025 0.190 0.178 Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/ HBT GaN HEMT Package Style: Micro-X, 4-Pin, Plastic GaAs MESFET SiGe Bi-CMOS Features · Reliable, Low-Cost HBT Design · 15.5dB Gain, +12.0dBm P1dB@2GHz · High P1dB of +14.6dBm@6.0GHz · Single Power Supply Operation GND 4 MARKING - N4 RF IN 1 · 50 I/O Matched for High


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PDF NLB-400 NLB-400 NLB-400-T1 NLB-400-E N4 MMIC marking n4 mmic N4 Amplifier mmic marking A MICROWAVE BJT 2GHZ NLB-400-E MMIC Amplifier marking A MMic Marking 3 GaAs Amplifier Micro-X Marking A Cascadable SiGe HBT MMIC Amplifier
2006 - SGA-1263

Abstract: SGA-1263Z BY 356
Text: SGA-1263(Z) SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD's SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT ) amplifier , -stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT , PCS bands. Matching® Applied GaAs HBT DCto400MHz Operation Single Supply Voltage Excellent


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PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz EDS-100935 SGA-1263 SGA-1263Z BY 356
2006 - trace code marking RFMD

Abstract: MARKING RFMD BB1Z SBB-1089Z RF Amplifier marking 420 Package Marking. BB1Z SBB-1089
Text: SBB-1089Z SBB-1089Z 50 MHz to 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50 MHz to 850 MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD's SBB-1089Z is a high performance InGaP HBT MMIC amplifier utilizing a , components. It is internally matched to 50 . Optimum Technology Matching® Applied GaAs HBT OIP3 = 43.1 , Receiver IF Amplifier Cellular, PCS, GSM, UMTS Wireless Data, Satellite Terminals InGaP HBT SiGe


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PDF SBB-1089Z OT-89 SBB-1089Z EDS-103998 SBB1089Z" SBB-1089Z-EVB1 trace code marking RFMD MARKING RFMD BB1Z RF Amplifier marking 420 Package Marking. BB1Z SBB-1089
2006 - trace code marking RFMD

Abstract: SBB-2089 SBB2089Z SBB-2089Z SBB2089 rfmd mmic MARKING RFMD bb2z marking amplifier mmic marking bb2z
Text: SBB-2089Z SBB-2089Z 50 MHz to 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50 MHz to 850 MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD's SBB-2089Z is a high performance InGaP HBT MMIC amplifier utilizing a , 240 MHz P1dB = 20.8 dBm at 500 MHz GaAs HBT Single Fixed 5 V Supply , Applications GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT


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PDF SBB-2089Z OT-89 SBB-2089Z DS100601 SBB2089Z" trace code marking RFMD SBB-2089 SBB2089Z SBB2089 rfmd mmic MARKING RFMD bb2z marking amplifier mmic marking bb2z
2002 - ECM028

Abstract: No abstract text available
Text: device was developed using EiC's own InGaP Gallium Arsenide Heterojunction Bipolar Transistor ( HBT , within this area.) X3 Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) 1 2 3 4 5 6 7 , MARKING DIAGRAM SS-000520-000 Revision E EiC Corp. A Subsidiary of EiC Enterprises, Ltd. 45738 , stage HBT collector. RF input port connects to internally matched 50 ohm circuit. Ref. Voltage for the , connects to the power amplifier stage HBT collector. RF out is internally matched to 50 ohms and expects a


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PDF ECM028 ECM028 28dBm AP-000513-000 AP-000516-000 SS-000520-000
2010 - FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic PC8230TU PG2163T5N sot-23 g6g 2SC3357/NE85634 marking code C1H mmic
Text: ). 53 6. MARKING /PART NUMBER , . 54 6.2 Discrete rank, marking and specification list (Target devices: Minimold, S01, 75, 79A, 84C , 3 V, IC = 10 mA PC8240T6N SiGe:C MMIC PC8231TK SiGe:C MMIC 25 NESG2031M05 SiGe HBT NESG2021M05 SiGe HBT PC8233TK SiGe:C MMIC PC8236T6N SiGe:C MMIC 20 NE3509M04 HJ-FET NE3508M04 HJ-FET 15 0.2 0 PC8211TK SiGe MMIC PC8230TU SiGe:C MMIC NESG3032M14 SiGe HBT


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PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic PC8230TU PG2163T5N sot-23 g6g 2SC3357/NE85634 marking code C1H mmic
2002 - PAE1

Abstract: ECM010 2110 - 2170mhz power module
Text: Transistor ( HBT ) process. It is optimized for WCDMA (digital) in the 1920 MHz to 1980 MHz band. It operates , PIN 6 RFout PIN 7 Gnd PIN 8 Gnd Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm) .232" +/- , XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM EiC Corp. A Subsidiary of EiC Enterprises , (analog) handset market. The PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and Quality EiCs


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PDF ECM010 ECM010 AP-000513-000 AP-000516-000 SS-000411-000 PAE1 2110 - 2170mhz power module
2003 - TriQuint PACKING

Abstract: AVX CGB marking code murata label CGB241 AVX COG Capacitor schematic diagram of bluetooth device
Text: HBT Power Amplifier Part Marking : White Ink or Laser Mark; XXXX = last 4 digits of lot code , InGaP HBT Power Amplifier Ordering Information: Type Marking Package CGB241 XXXX SLIM , CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The , : Features: · 2-stage Bluetooth InGaP HBT power amplifier · Single voltage supply · Wide operating voltage , Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Absolute Maximum Ratings Parameter


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PDF CGB241 CGB241 TriQuint PACKING AVX CGB marking code murata label AVX COG Capacitor schematic diagram of bluetooth device
2004 - MMIC Amplifier Micro-X marking D

Abstract: d marking "Micro-X" Micro-X Marking E GaAs Amplifier Micro-X Marking N amplifier marking _1 micro-X ceramic Package hemt D marking amplifier MMIC Amplifier Micro-X marking N d marking Micro-X marking gain stage GaAs MMIC AMPLIFIER
Text: amplifier. This 50 amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for , . 0.200 sq. Typ Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT InGaP/ HBT GaN HEMT NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization , Reliable, Low-Cost HBT Design · 19.0dB Gain, +18.2dBm P1dB@1.0GHz · High P1dB of +17.9dBm@3.0GHz GND 4 N O T 0.040 + 0.002 · Single 6V Power Supply Operation MARKING - R2 · 50 I/O


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PDF RF3818 RF3818 RF3818SB RF3818SR 100-piece RF3818TR7 RF3818PCBA-410 MMIC Amplifier Micro-X marking D d marking "Micro-X" Micro-X Marking E GaAs Amplifier Micro-X Marking N amplifier marking _1 micro-X ceramic Package hemt D marking amplifier MMIC Amplifier Micro-X marking N d marking Micro-X marking gain stage GaAs MMIC AMPLIFIER
2002 - circuit diagram of PAM transmitter and receiver

Abstract: ECM014 MCH185A101JK
Text: 's own InGaP Heterojunction Bipolar Transistor ( HBT ) process. It is optimized for US PCS in the 1850 to , BOTTOM SIDE PAD .036" x .030" (.91mm x .76mm) Device Marking .062" +/- .004" (1.57 mm +/-0.10 mm , xxxx ECM014 XXXX XXXX LOT NUMBER TOP VIEW WITH MARKING DIAGRAM SS-000447-000 Revision D , PAM utilizes InGaP HBT technology and a multi layer laminate base, over molded modular package with a LGA signal pad. I. In GaP HBT offers Reliability and Quality EiCs proprietary InGaP HBT provides


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PDF ECM014 28dBm 16dBm ECM014 1910MHz AP-000513-000 AP-000516-000 SS-000447-000 circuit diagram of PAM transmitter and receiver MCH185A101JK
bias of GaAs MESFET

Abstract: NLB-300-T1 MMIC Amplifier Micro-X mmic marking A 10GHz power amplifier GaAs Amplifier Micro-X Marking A 10GHz mmic MMIC Amplifier Micro-X marking 4 pin MMic Marking 3 NLB-300-E
Text: reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications , 0.025 0.190 0.178 Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/ HBT GaN HEMT Package Style: Micro-X, 4-Pin, Plastic GaAs MESFET SiGe Bi-CMOS Features · Reliable, Low-Cost HBT Design · 13.0dB Gain, +11.1dBm P1dB@2GHz · High P1dB of +14.1dBm@6.0GHz and GND 4 +12.7dBm@10.0GHz MARKING - N3 · Single Power Supply Operation · 50 I/O


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PDF NLB-300 10GHz NLB-300 NLB-300-T1 NLB-300-E bias of GaAs MESFET MMIC Amplifier Micro-X mmic marking A 10GHz power amplifier GaAs Amplifier Micro-X Marking A 10GHz mmic MMIC Amplifier Micro-X marking 4 pin MMic Marking 3 NLB-300-E
nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
Text: ). 55 6. MARKING /PART NUMBER , . 56 Selection Guide PX10727EJ02V0PF 5 6.2 Discrete rank, marking and specification list , MMIC 25 NESG2031M05 SiGe HBT NESG2021M05 SiGe HBT PC8233TK SiGe:C MMIC PC8236T6N SiGe:C , SiGe:C MMIC NESG3032M14 SiGe HBT NESG3033M14 SiGe HBT 0.6 0.4 NE662M04 (2SC5508) Si-BJT , mA : VCE = 2 V, IC = 10 mA 20 NE3510M04 HJ-FET NESG2021M05 SiGe HBT NESG3031M05


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PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 marking code C1G mmic FET marking code g5d LGA 1155 PIN diagram MMIC SOT 363 marking CODE 77 marking code C1H mmic PB1507 PC8230TU marking code C1E mmic
2004 - MMIC Amplifier Micro-X marking D

Abstract: mmic marking A MMIC Amplifier Micro-X micro-X ceramic Package hemt mmic marking D amplifier marking _1 BJT amplifiers d marking "Micro-X" RF3816PCBA-410 GaAs Amplifier Micro-X Marking N
Text: amplifier. This 50 amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for , . 0.200 sq. Typ Optimum Technology Matching® Applied Si BJT GaAs HBT Si Bi-CMOS SiGe HBT InGaP/ HBT GaN HEMT NOTES: 1. Shaded lead is pin 1. 2. Darkened areas are metallization , Reliable, Low-Cost HBT Design · 12.1dB Gain, +17.3dBm P1dB@1.0GHz · High P1dB of +14.7dBm@6.0GHz GND 4 N O T 0.040 + 0.002 · Single 6V Power Supply Operation MARKING - R1 · 50 I/O


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PDF RF3816 RF3816 RF3816SB RF3816SR 100-piece RF3816TR7 RF3816PCBA-410 MMIC Amplifier Micro-X marking D mmic marking A MMIC Amplifier Micro-X micro-X ceramic Package hemt mmic marking D amplifier marking _1 BJT amplifiers d marking "Micro-X" GaAs Amplifier Micro-X Marking N
2005 - Not Available

Abstract: No abstract text available
Text: ECG001 The Communications Edge TM InGaP HBT Gain Block Product Features Product , the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a , °C Operation of this device above any of these parameters may cause permanent damage. InGaP HBT Gain Block ECG001C* Rating InGaP HBT Gain Block ECG001B-G Absolute Maximum Rating Description InGaP HBT Gain Block (lead-tin SOT-89 Pkg) (lead-free/green/RoHS-compliant SOT-89 Pkg


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PDF ECG001 OT-89 OT-363 ECG001 1-800-WJ1-4401
2013 - 2312 footprint dimension

Abstract: No abstract text available
Text: without notice www.triquint.com AG603-89G InGaP HBT Gain Block Package Marking and Dimensions , AG603-89G InGaP HBT Gain Block Applications • • • • Mobile Infrastructure CATV , the high reliability InGaP/GaAs HBT process technology and only requires DC-blocking capacitors, a , HBT Gain Block 0.7-2.4 GHz Evaluation Board Standard T/R size = 3000 pieces on a 13” reel , www.triquint.com AG603-89G InGaP HBT Gain Block Absolute Maximum Ratings Recommended Operating Conditions


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PDF AG603-89G OT-89 AG603-89 2312 footprint dimension
1999 - MMIC Amplifier Micro-X marking

Abstract: GaAs Amplifier Micro-X Marking A micro-X ceramic Package hemt MMIC Amplifier Micro-X marking 4 pin RF3818 a1 mmic MMIC Amplifier Micro-X amplifier marking 4 MARKING HBT A marking HBT amplifier
Text: . This 50 amplifier is based on a reliable HBT MMIC design, providing unsurpassed performance for many , . Darkened areas are metallization. Optimum Technology Matching® Applied Si BJT GaAs HBT SiGe HBT GaN , InGaP/ HBT Features · Reliable, Low-Cost HBT Design · 19.0dB Gain, +18.2dBm P1dB@1.0GHz · High P1dB of +17.9dBm@3.0GHz GND 4 MARKING - R2 · Single 6V Power Supply Operation · 50 I/O Matched ·


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PDF RF3818 RF3818 RF3818SB RF3818SR 100-piece RF3818TR7 RF3818PCBA-410 MMIC Amplifier Micro-X marking GaAs Amplifier Micro-X Marking A micro-X ceramic Package hemt MMIC Amplifier Micro-X marking 4 pin a1 mmic MMIC Amplifier Micro-X amplifier marking 4 MARKING HBT A marking HBT amplifier
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