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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LTC1255S8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO8, 0.150 INCH, PLASTIC, SO-8, MOSFET Driver
LTC1156CNND Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP16, PLASTIC, DIP-16, MOSFET Driver
LTC1255N8 Linear Technology IC 2 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8, MOSFET Driver
LT1161IS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver
LT1161CS#TR Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SOIC-20, MOSFET Driver

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - 80N055

Abstract: date code marking NEC MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR code marking NEC NEC TRANSISTOR MARKING CODE nec 2502 4 pin nec 80N055 80n05 NP80N055MLE
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N055MLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N055MLE is N-channel MOS Field Effect Transistor designed for high , connected between the gate and source of the transistor serves as a protector against ESD. When this device , NP80N055MLE MARKING INFORMATION NEC 80N055 LE Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS Process Wave soldering Conditions Maximum temperature


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PDF NP80N055MLE NP80N055MLE O-220 MP-25K) O-220) 80N055 date code marking NEC MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR code marking NEC NEC TRANSISTOR MARKING CODE nec 2502 4 pin nec 80N055 80n05
2006 - NEC TRANSISTOR MARKING CODE

Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect , UG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING , -3ZK) 2500 p/reel Typ. 0.27 g Transistor designed for high current switching applications. FEATURES , Source Remark Strong electric field , when exposed to this device, can cause destruction of the gate


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PDF NP55N03SUG NP55N03SUG O-252 O-252) NEC TRANSISTOR MARKING CODE
1998 - NEC uPA 63 H

Abstract: NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 UPA672T MEL12 UPA572T SC20A marking h1 6pin
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR ,uPA502T N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) The , Xl 0679E 5 DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR pPA503T P-CHANNEL MOS FET , 0679E I 5 DATA SHEET NEC/ l MOS FIELD EFFECT TRANSISTOR ,uPA505T MOS FET @-PIN 2 , MEL1202 Xl 0679E 5 DATA SHEET MOS FIELD EFFECT TRANSISTOR uPA573T P-CHANNEL MOS FET @-PIN 2 , 5 DATA SHEET NEC/ N-CHANNEL MOS FIELD EFFECT TRANSISTOR pPA602T MOS FET (6-PIN 2


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PDF uPA502T pPA502T SC-59 pPA503T NEC uPA 63 H NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 UPA672T MEL12 UPA572T SC20A marking h1 6pin
2005 - MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: Toshiba 2SJ 2sk2162
Text: 2SK2162 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK2162 Audio-Frequency Power Amplifier Applications Unit: mm · · · High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 0.7 S (typ.) Complementary to 2SJ338 Maximum Ratings (Ta = 25°C) Characteristic , transistor is an electrostatic-sensitive device. Handle with care. Marking K2162 Part No. (or abbreviation code ) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-03-04


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PDF 2SK2162 2SJ338 SC-64 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR Toshiba 2SJ 2sk2162
2008 - d1941

Abstract: K4144 2SK4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4144 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4144 is N-channel MOS Field Effect Transistor designed for high current switching , Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The , in the "Find what:" field . 2008 2SK4144 ELECTRICAL CHARACTERISTICS (TA = 25 , and source of the transistor serves as a protector against ESD. When this device actually used, an


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PDF 2SK4144 2SK4144 2SK4144-AZ 2SK4144-S12-AZ O-220 d1941 K4144 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR transistor K4144 ke marking transistor P300 2SK41
2006 - D1804

Abstract: 70n10 70n10 data sheet NEC 70N10 NP70N10KUF NP70N10KUF-E2-AZ code marking NEC NP70N10KUF-E1-AZ NEC+70N10
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N10KUF SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N10KUF is N-channel MOS Field Effect Transistor designed for high current switching , INFORMATION NEC 70N10 UF Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED , easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field . 2006 , Drain Body Diode Gate Source Remark Strong electric field , when exposed to this device, can


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PDF NP70N10KUF NP70N10KUF NP70N10KUF-E1-AZ NP70N10KUF-E2-AZ O-263) O-263 MP-25ZK) D1804 70n10 70n10 data sheet NEC 70N10 NP70N10KUF-E2-AZ code marking NEC NP70N10KUF-E1-AZ NEC+70N10
2007 - transistor K4145

Abstract: 2SK4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4145 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4145 is N-channel MOS Field Effect Transistor designed for high current switching , Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The , file and specifying it in the "Find what:" field . 2007 2SK4145 ELECTRICAL CHARACTERISTICS (TA = , CIRCUIT Drain Body Diode Gate Source Remark Strong electric field , when exposed to this


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PDF 2SK4145 2SK4145 2SK4145-S19-AY O-220 transistor K4145 nec k4145 k4145 k4145 NEC fet K4145 transistor 2sk4145 2SK4145-S19-AY transistor d 1302 K4145 DATASHEET
2009 - 2sk4202

Abstract: nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4202 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4202 is N-channel MOS Field Effect Transistor designed for high current switching , NEC K4202 Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING , file and specifying it in the "Find what:" field . 2008 2SK4202 ELECTRICAL CHARACTERISTICS (TA = , ) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field , when exposed to


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PDF 2SK4202 2SK4202 2SK4202-S19-AY O-220 nec k4202 k4202 2sk420 d1922 2SK4202-S19-AY NEC TRANSISTOR MARKING CODE 2SK4202-S19 2SK42
2009 - D1866

Abstract: 70n04 NP70N04MUG NP70N04MUG-S18-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching , MARKING INFORMATION NEC 70N04 UG Pb-free plating marking Abbreviation of part number Lot code , searched by copying an "" in the PDF file and specifying it in the "Find what:" field . 2007 , electric field , when exposed to this device, can cause destruction of the gate oxide and ultimately degrade


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PDF NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) D1866 70n04 NP70N04MUG-S18-AY
2007 - D1859

Abstract: NEC 109N04 MP-25ZP NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching , plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The , searched by copying an "" in the PDF file and specifying it in the "Find what:" field . 2007 , Source Remark Strong electric field , when exposed to this device, can cause destruction of the gate


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PDF NP109N04PUG NP109N04PUG NP109N04PUG-E1-AY NP109N04PUG-E2-AY O-263 MP-25ZP) O-263) D1859 NEC 109N04 MP-25ZP NP109N04PUG-E1-AY NP109N04PUG-E2-AY
2006 - NEC 110N04

Abstract: 110N04 NP110N04PDG NP110N04PDG-E2-AZ MP-25ZP NP110N04PDG-E1-AZ NEC LOT CODE D1756
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching , INFORMATION NEC 110N04 DG Pb-free plating marking Abbreviation of part number Lot code , field . 2005 NP110N04PDG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL , Drain Body Diode Gate Source Remark Strong electric field , when exposed to this device, can


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PDF NP110N04PDG NP110N04PDG NP110N04PDG-E1-AZ NP110N04PDG-E2-AZ O-263 MP-25ZP) O-263) NEC 110N04 110N04 NP110N04PDG-E2-AZ MP-25ZP NP110N04PDG-E1-AZ NEC LOT CODE D1756
2008 - 55N03

Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG NP55N03SUG-E1-AY NEC to-252 marking information
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching , Abbreviation of part number Pb-free plating marking UG Lot code RECOMMENDED SOLDERING CONDITIONS The , file and specifying it in the "Find what:" field . 2006, 2007 NP55N03SUG ELECTRICAL , Remark Strong electric field , when exposed to this device, can cause destruction of the gate oxide and


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PDF NP55N03SUG NP55N03SUG NP55N03SUG-E1-AY NP55N03SUG-E2-AY O-252 O-252) 55N03 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG-E1-AY NEC to-252 marking information
2007 - 160N04

Abstract: D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY NP160N04TDG To-263-7 MP-25ZT
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP160N04TDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching , plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The , field . 2007 NP160N04TDG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL , Remark Strong electric field , when exposed to this device, can cause destruction of the gate oxide and


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PDF NP160N04TDG NP160N04TDG NP160N04TDG-E1-AY NP160N04TDG-E2-AY O-263-7pin MP-25ZT) O-263-7pin) 160N04 D1876 NEC160N04 TO263-7 NP160N04TDG-E1-AY NP160N04TDG-E2-AY To-263-7 MP-25ZT
2009 - 2SK4201

Abstract: 2SK4201-S19 2SK42
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4201 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4201 is N-channel MOS Field Effect Transistor designed for high current switching , NEC K4201 Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING , file and specifying it in the "Find what:" field . 2008 2SK4201 ELECTRICAL CHARACTERISTICS (TA = , .Fin (Drain) EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field


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PDF 2SK4201 2SK4201 2SK4201-S19-AY O-220 2SK4201-S19 2SK42
2007 - D1866

Abstract: 70n04 NP70N04MUG NP70N04MUG-S18-AY NEC MARKING CODE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching , 70N04 UG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING , searched by copying an "" in the PDF file and specifying it in the "Find what:" field . 2007 , CIRCUIT Drain Body Diode Gate Source Remark Strong electric field , when exposed to this


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PDF NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) D1866 70n04 NP70N04MUG-S18-AY NEC MARKING CODE
2007 - NP70N04MUG

Abstract: 70N04 NP70N04MUG-S18-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching , easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field . 2007 , Source Remark Strong electric field , when exposed to this device, can cause destruction of the gate , D18664EJ2V0DS NP70N04MUG MARKING INFORMATION NEC 70N04 UG Pb-free plating marking Abbreviation of


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PDF NP70N04MUG NP70N04MUG NP70N04MUG-S18-AY O-220 MP-25K) O-220) 70N04 NP70N04MUG-S18-AY
2005 - 2SK4019

Abstract: K4019
Text: 2SK4019 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L - MOS V) 2SK4019 Chopper Regulator, DC/DC Converter and Motor Drive Applications ± Unit: mm ± 4 V gate drive , temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2004-12-24 , , VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / µs Marking K4019 Part No. (or abbreviation code ) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2


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PDF 2SK4019 2SK4019 K4019
2007 - NEC 60N04

Abstract: 60n04 NP60N04MUG NP60N04MUG-S18-AY D1866 np60n04mug-s18 NEC+60N04 NEC LOT CODE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04MUG is N-channel MOS Field Effect Transistor designed for high current switching , plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The NP60N04MUG , easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field . 2007 , Drain Body Diode Gate Source Remark Strong electric field , when exposed to this device, can


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PDF NP60N04MUG NP60N04MUG NP60N04MUG-S18-AY O-220 MP-25K) O-220) NEC 60N04 60n04 NP60N04MUG-S18-AY D1866 np60n04mug-s18 NEC+60N04 NEC LOT CODE
2007 - 90n04

Abstract: NEC TRANSISTOR MARKING CODE NP90N04MUG 90n04 UG NP90N04MUG-S18-AY D1866 DIODE MARKING code UG 45
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N04MUG is N-channel MOS Field Effect Transistor designed for high current switching , easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field . 2007 , Source Remark Strong electric field , when exposed to this device, can cause destruction of the gate , D18665EJ2V0DS NP90N04MUG MARKING INFORMATION NEC 90N04 UG Pb-free plating marking Abbreviation of


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PDF NP90N04MUG NP90N04MUG NP90N04MUG-S18-AY O-220 MP-25K) O-220) 90n04 NEC TRANSISTOR MARKING CODE 90n04 UG NP90N04MUG-S18-AY D1866 DIODE MARKING code UG 45
2006 - K4021

Abstract: 2SK4021
Text: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOS V) 2SK4021 ± ± ± Switching Regulator and DC/DC Converter Applications Motor Drive Applications z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.8 (typ , Marking K4021 Part No. (or abbreviation code ) Lot No. A line indicates lead (Pb)-free package or , Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an


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PDF 2SK4021 K4021 2SK4021
2005 - K4002

Abstract: 2SK4002
Text: 2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications ± Unit: mm ± Maximum Ratings (Ta = 25°C) Characteristic Symbol Unit VDSS Drain-source voltage Rating 600 V MAX 1 MAX , recovery charge - 3.5 - µC Marking K4002 Part No. (or abbreviation code ) Lot No. A , channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1


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PDF 2SK4002 K4002 2SK4002
2005 - K4003

Abstract: 2SK4003
Text: 2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications ± Unit: mm Low leakage current Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) ± MAX ± ± : RDS (ON) = 1.7 (typ , Marking K4003 Part No. (or abbreviation code ) Lot No. A line indicates lead (Pb)-free package or , by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with


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PDF 2SK4003 K4003 2SK4003
2005 - 2SK4018

Abstract: No abstract text available
Text: 2SK4018 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L 2 - MOS V) 2SK4018 Chopper Regulator, DC/DC Converter and Motor Drive Applications ± Unit: mm ± ± MAX : |Yfs| = , channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 , 0.2 - µC IDR = 3 A, VGS = 0 V IDR = 3 A, VGS = 0 V, dIDR / dt = 50 A / µs Marking K4018 Part No. (or abbreviation code ) Lot No. A line indicates lead (Pb)-free package or lead (Pb


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PDF 2SK4018 2SK4018
2006 - K4019

Abstract: 2SK4019
Text: 2SK4019 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L - MOS V) 2SK4019 Chopper Regulator, DC/DC Converter and Motor Drive Applications ± Unit: mm ± 4 V gate drive , temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-06-29 , , VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / µs Marking K4019 Part No. (or abbreviation code ) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2


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PDF 2SK4019 K4019 2SK4019
2005 - k4003

Abstract: 2SK4003 15a10
Text: 2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications ± Unit: mm ± Symbol Rating VDSS 600 V Drain-gate voltage (RGS = 20 k) VDGR 600 V Gate-source voltage VGSS ±30 , Marking K4003 Part No. (or abbreviation code ) Lot No. A line indicates lead (Pb)-free package or , : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an


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PDF 2SK4003 k4003 2SK4003 15a10
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