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Not Available

Abstract:
Text: Philips Semiconductors Product specification NPN high-voltage transistor FEATURES · Low current (max. 100 mA) · High voltage (max. 80 V). BSS64 PINNING PIN 1 2 3 base emitter collector DESCRIPTION APPLICATIONS · High-voltage general purpose and switching applications · intended for application in thick and thin-film circuits. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement: BSS63. 1 MARKING TYPE NUMBER BSS64 Top View M.AM255 MARKING CODE AMp Fig


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PDF BSS64 BSS63. AM255
marking 603 npn transistor

Abstract:
Text: Philips Semiconductors Product specification NPN medium frequency transistor FEATURES · Low current (max. 25 mA) · Low voltage (max. 20 V) · Very low feedback capacitance (typ. 350 fF). BFS20 PINNING PIN 1 2 3 base emitter collector DESCRIPTION APPLICATIONS · IF and VHF applications in thick and thin-film circuits. DESCRIPTION NPN medium frequency transistor in a SOT23 plastic package. 3 3 J ,_ C 1 MARKING TYPE NUMBER BFS20 2 1 2 MAM255 MARKING CODE G1p Top View


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PDF BFS20 MAM255 marking 603 npn transistor marking HA 7 sot23
BF570

Abstract:
Text: capacitance (max. 2.2 pF). 2 emitter 3 collector TYPE NUMBER MARKING CODE BF570 B26 1 Top View MAM255


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PDF BF570 BF570 MAM255 MAM255 marking A1 TRANSISTOR marking code 10 sot23
Not Available

Abstract:
Text: D1* D3* Top V ie w MAM255 Note 1. Fig. 1 Simplified outline (SOT23) and symbol


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PDF BCW31 BCW32; BCW33 BCW29 BCW30. BCW32 MAM255
Not Available

Abstract:
Text: *1 D Top 2 - 2 MAM255 V ie w Note 1. * = p : M ade in Hong Kong. * = t


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PDF PMBTA42 BTA92. BTA42 MAM255
BCV71

Abstract:
Text: Philips Semiconductors Product specification NPN general purpose transistors BCV71 ; BCV72 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 60 V). 1 base 2 emitter APPLICATIONS 3 collector • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. MARKING Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. TYPE NUMBER MARKING CODE*1) BCV71 K7* BCV72 K8* 1 Top View MAM255 Fig. 1 Simplified outline (SOT23


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PDF BCV71 BCV72 BCV71 BCV72 MAM255 sot23 marking JR
bfs20

Abstract:
Text: View MAM255 G1* Fig. 1 Simplified outline (SOT23) and symbol. Note 1. * = p : Made in


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PDF BFS20 MAM255 bfs20
d2p marking code philips

Abstract:
Text: Philips Semiconductors Product specification NPN general purpose transistors FEATURES · Low current (100 mA) · Low voltage (32 V). BCW31 ; BCW32; BCW33 PINNING PIN 1 2 base em itter collector DESCRIPTION APPLICATIONS · G eneral purpose sw itching and amplification. 3 DESCRIPTION NPN transistors in a plastic SOT23 package. PNP complem ents: BCW 29 and BCW 30. 3 _ 1 3 MARKING TYPE NUMBER BCW31 BCW 32 BCW 33 MARKING CODE D ip D2p D3p H 1 Ei Top View MAM255 Fig. 1


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PDF BCW31 BCW32; BCW33 BCW31 MAM255 d2p marking code philips marking d3p 4-20 mA 1997 D2p marking D3P SOT23 marking D2p
Not Available

Abstract:
Text: > BSS 64 1 AM* T o p V ie w Note 1. Fig. 1 MAM255 S im plified outline (SO T23


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PDF BSS64 BSS63. MAM255
Not Available

Abstract:
Text: 1X* Top V ie w MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia


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PDF BF820; BF822 BF821; BF823. BF820 MAM255
BCF81

Abstract:
Text: emitter 3 collector 3 1 2 Top View MAM255 Fig. 1 Simplified outline (SOT23) and symbol. QUICK


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PDF BCF81 BCF81 MAM255
MAM255

Abstract:
Text: Philips Semiconductors Product specification NPN general purpose transistor FEATURES · Low current (max. 100 mA) · Low voltage (max. 45 V). BCW81 PINNING PIN 1 2 3 base emitter collector DESCRIPTION APPLICATIONS · General purpose switching and high gain amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. MARKING TYPE NUMBER BCW81 MARKING CODE K3p Top View 1 MAM255 Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VcBO VcEO ¡CM


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PDF BCW81 MAM255 MAM255
transistor marking LG

Abstract:
Text: Philips Semiconductors Product specification NPN generai purpose transistor FEATURES · Low current {max. 100 mA) · Low voltage (max. 45 V). BCF81 PINNING PIN 1 2 3 base emitter collector DESCRIPTION APPLICATIONS · Low level, low noise general purpose applications in thick and thin-film circuits. DESCRIPTION NPN transistor in a SOT23 plastic package. 3 _ 1 3 MARKING TYPE NUMBER BCF81 MARKING CODE K9p T op View MAM255 Fig.1 Simplified outline (SOT23) and symbol


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PDF BCF81 MAM255 transistor marking LG
transistor 1Bp

Abstract:
Text: BC848B BC848C MARKING CODE 1Gp 1Mp 1Jp 1Kp 1Lp 2 Top View MAM255 Fig.1 Simplified


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PDF BC846; BC847; BC848 BC856; BC857; BC858. BC846 BC846A BC846B BC847 transistor 1Bp 1gp transistor bc848 1Lp marking code 1gp 1Bp transistor BC646B bc847c
Not Available

Abstract:
Text: «1) BC849B 2B* BC850B 2F* BC849C 2C* BC850C 2 1 2 2G* Top V ie w MAM255


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PDF BC849; BC850 BC859 BC860. BC849B BC850B BC849C BC850C MAM255
BCX19

Abstract:
Text: emitter 3 collector 3 2 1 2 Top View MAM255 Fig. 1 Simplified outline (SOT23) and symbol. QUICK


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PDF BCX19; BCX20 BCX17and BCX18. BCX19 BCX20 BCX18 npn general purpose transistors application
transistor 1fp

Abstract:
Text: ; BC848 PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector 3 _3 2 1 2 Top View MAM255 Fig. 1 Simplified


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PDF BC846; BC847; BC848 BC856; BC857; BC858. BC846 BC847C BC846A transistor 1fp 1FP transistor BC847 1gp transistor BC848C transistor 1fp 11 npn general purpose transistors 1gp npn code 1gp
BT5401

Abstract:
Text: MAM255 Note 1. * = p : M ade in Hong Kong. * = t : Made in Malaysia. Fig. 1 S im plified


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PDF PMBT5550 BT5401. T5550 MAM255 BT5401
Not Available

Abstract:
Text: PMBT2222A *1P T o p V ie w MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in


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PDF PMBT2222; PMBT2222A PMBT2907 PMBT2907A. PMBT2222 MAM255
PMBT2369

Abstract:
Text: symbol. MARKING CODE<1> 1 2 MAM255 2 *1 J T o p V ie w LIMITING VALUES In accordance with the


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PDF PMBT2369 PMBT2369 MAM255
Not Available

Abstract:
Text: * MAM255 AC* BCW60D Top V ie w AB* Fig. 1 Simplified outline (SOT23) and symbol. Note 1


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PDF BCW60 BCW61 BCW60B BCW60C MAM255 BCW60D
Not Available

Abstract:
Text: A Top V ie w MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia


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PDF PMBT3904 PMBT3906. MAM255
Not Available

Abstract:
Text: PMBT5551 MAM255 *G1 Note 1. Fig. 1 S im plified outline (SO T23) and sym bol. * = p : M ade


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PDF PMBT5551 BT5401. MAM255
2009 - BF840

Abstract:
Text: * 2 2 Top view MAM255 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * =


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PDF BF840 MAM255 R75/05/pp6 BF840 marking A1 TRANSISTOR
2009 - BSS63

Abstract:
Text: NUMBER BSS64 Top view 60* or AM 2 2 MAM255 Note 1. * = p: Made in Hong Kong. * = t


Original
PDF M3D088 BSS64 BSS63. R75/06/pp6 BSS63 BSS64
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