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MA1070100L Panasonic Electronic Components Bristol Electronics 2,969 - -

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MA10701 datasheet (3)

Part Manufacturer Description Type PDF
MA10701 Panasonic Diode Original PDF
MA10701 Panasonic DIODE SCHOTTKY DIODE 30V 0.7A 3MINI3-G1 Original PDF
MA10701 Panasonic Silicon epitaxial planar type Original PDF

MA10701 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - 50Hz sine wave generator

Abstract: MA10701 MA10701 SCHOTTKY diode
Text: MA111 Schottky Barrier Diodes (SBD) MA10701 Silicon epitaxial planer type Unit : mm +0.2 For high-frequency rectification 2.8 ­0.3 +0.25 1.5 ­0.05 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 ­0.05 +0.2 IF(AV)= 700mA rectification possible 1 0.95 q type package (3-pin) 2.9 ­0.05 q Mini 1.9±0.2 s Features Rating Symbol +0.1 0.16 ­0.06 , =10mA IF=100mA IR=100mA RL=100 M4P MA10701 Schottky Barrier Diodes (SBD) IF ­ VF VF ­ Ta


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PDF MA111 MA10701 700mA O-236 SC-59 50Hz sine wave generator MA10701 MA10701 SCHOTTKY diode
MA10701 SCHOTTKY diode

Abstract: MA741
Text: MA720 MA789 MA748 MA10702 MA10703 MA739 MA10701 MA735 MA701A MA736 MA701 MA737 MA738 MA10705 MA743


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PDF DO-34 MA700 MA704 MA732 MA795 MA795WA/WK* MA2S728 MA781 MA781WA/WK* MA728 MA10701 SCHOTTKY diode MA741
2002 - MA716

Abstract: MA7D50 ma741 MA10799
Text: Reference I Part Number List (The order of Conventional Part Number) (C Part No.) (MA10700) ( MA10701 ) (MA10702) (MA10703) (MA10704) (MA10705) (MA10798) (MA10799) (MA4S713) (MA6S718) (MA700) (MA700A) (MA704) (MA704A) (MA704WA) (MA704WK) (MA713) (MA714) (MA715) (MA716) (MA717) (MA717WA) (MA717WK) (MA718) (MA719) (MA720) (MA721) (MA721WA) (MA721WK) (MA723) (MA724) (MA726) (MA727) (MA728) (MA729) (MA732) (MA735) (MA736) (MA737) (MA738) (MA739) (MA740) (MA741) (MA741WA) M Part No. MA3J700 MA3X701 MA3J702


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PDF MA10700) MA10701) MA10702) MA10703) MA10704) MA10705) MA10798) MA10799) MA4S713) MA6S718) MA716 MA7D50 ma741 MA10799
ir d10

Abstract: AMA780 ir d10 d10 D10D26
Text: Diodes Schottky Barrier Diodes (SBD) (For Small Current) (continued) Application Type No. AMA786WK % AMA791 * AMA792 * A M A792W A * A M A792W K * AMA793 * MA774 MA775 AMA785 AMA787 AMA796 AMA780 MA723 MA721 MA721WA/WK MA724 5S MA726 MA729 MA740* For rectifier MA744 MA727 MA746 % MA777 AMA782 AMA778 AMA783 AMA788 MA719 MA720 AMA10700 AMA779 AMA789 AMA748 MA10702 MA739 MA10701 MA735 MA736 MA701/A MA737 MA738 MA743« MA707 « SHF/UHF MIX MA730 -> S AMA731 * AMA790 MA733 ^Contains Multi Elements 150


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PDF AMA786WK AMA791 AMA792 A792W AMA793 MA774 MA775 AMA785 AMA787 ir d10 AMA780 ir d10 d10 D10D26
2002 - MA7D52

Abstract: No abstract text available
Text: ) (MA781WA) (MA781WK) (MA795) (MA795WA) (MA795WK) ( MA10701 ) (MA10703) (MA704) (MA704A) (MA704WA


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PDF MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52
a715

Abstract: MA748 ma723 MA729
Text: * MA726* MA746* MA727 MA788 MA10700 MA720 MA789 MA748 MA2ZD02 MA10702 MA10703 MA10701 MA743


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PDF DO-34 MA700 MA704 MA795 MA795WA/WK* MA704A MA741 MA741WAA/VK* MA742* MA4S713* a715 MA748 ma723 MA729
DO-34

Abstract: MA723 MA782 ma10701 AMA792WK AMA792WA AMA792 AMA791 AMA787 AMA10
Text: 10 S Mini (3 pins) D3 MA739 700 90 0.8 1000 New Mini Power (2 pins) D15 MA10701 30 0.55 80 Mini


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PDF AMA786WK AMA791 AMA792 AMA792WA AMA792WK AMA793 MA774 DO-34 MA775 MA723 MA782 ma10701 AMA792WK AMA792WA AMA792 AMA791 AMA787 AMA10
2002 - Not Available

Abstract: No abstract text available
Text: Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type Unit: mm For high frequency rectification I Features · IF(AV) = 700 mA rectification is possible · Mini type 3-pin package 1 0.40+0.10 ­0.05 3 0.16+0.10 ­0.06 1.50+0.25 ­0.05 2.8+0.2 ­0.3 2 (0.95) (0.95) I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage


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PDF MA3X701 MA10701) SC-59
2002 - MA10701

Abstract: MA3X701
Text: Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 ­0.05 0.16+0.10 ­0.06 1.9±0.1 2.90+0.20 ­0.05 Symbol Rating Unit VR 30 V VRRM 30 V Average forward current IF(AV) 700 mA Non-repetitive peak forwardsurge-current * IFSM 5 A Junction temperature Tj 125 Tstg -55 to +150 °C 1: Anode 2: N.C. 3: Cathode EIAJ: SC-59 Mini3-G1 Package °C


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PDF MA3X701 MA10701) SC-59 MA10701 MA3X701
2004 - MA10701

Abstract: MA3X701
Text: Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type Unit: mm 0.40+0.10 ­0.05 For high frequency rectification 0.16+0.10 ­0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 ­0.05 Absolute Maximum Ratings Ta = 25°C 10° Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 700 mA Non-repetitive peak forward surge current * IFSM 5 A Junction temperature Tj 125 °C Storage


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PDF MA3X701 MA10701) MA10701 MA3X701
2001 - MA10701

Abstract: MA3X701
Text: Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type Unit : mm + 0.2 2.8 - 0.3 1.45 0.95 1 3 Unit VR 30 V Repetitive peak reverse voltage VRRM 30 Average forward current IF(AV) 700 mA Non-repetitive peak forward surge current* IFSM 5 A Junction temperature Tj 125 °C Storage temperature Tstg -55 to +150 °C + 0.1 + 0.1 V 0.1 to 0.3 0.4 ± 0.2 0 to 0.1 Rating 0.8 + 0.2


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PDF MA3X701 MA10701) MA10701 MA3X701
2004 - MA10701

Abstract: MA3X701
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type Unit: mm 0.40+0.10 ­0.05 For high frequency rectification 0.16+0.10 ­0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 ­0.05 Absolute Maximum Ratings Ta = 25°C 10° Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 700 mA Non-repetitive peak forward surge current * IFSM 5 A


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PDF 2002/95/EC) MA3X701 MA10701) MA10701 MA3X701
2004 - Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type For high frequency rectification Features · Forward current (Average) IF(AV) = 700 mA rectification is possible 1 2 (0.65) (0.95) (0.95) 1.9±0.1 2.90+0.20 ­0.05 10° 1.1+0.2 ­0.1 1.1+0.3 ­0.1 0.40+0.10 ­0.05 3 1.50+0.25 ­0.05 2.8+0.2 ­0.3 Unit: mm 0.16+0.10 ­0.06 Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse


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PDF 2002/95/EC) MA3X701 MA10701) SC-59
2004 - MA3X701

Abstract: MA10701
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type Unit: mm 0.40+0.10 ­0.05 For high frequency rectification 0.16+0.10 ­0.06 2 (0.65) ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in :// g nt n ce c g pa U in tin t e fo na RL ue ue ype typ ur so a d t d e Pr od ty ni bo yp p c. u e e uc ne t l d tl


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PDF 2002/95/EC) MA3X701 MA10701) MA3X701 MA10701
diode cross reference 1s1555

Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
Text: -015C RB411D RB401 RB400D MA10701 MA10703 1SS349 DO-41 SB05-05CP MA720 CMPAK CMPAK-4 URP


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PDF DO-35 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S953 MA161 1S1586, 1S1587 diode cross reference 1s1555 diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
2001 - MA3X701

Abstract: No abstract text available
Text: Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type Unit: mm For high frequency rectification I Features · IF(AV) = 700 mA rectification is possible · Mini type 3-pin package 1 0.40+0.10 ­0.05 3 1.50+0.25 ­0.05 2.8+0.2 ­0.3 0.16+0.10 ­0.06 2 (0.65) (0.95) (0.95) I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage


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PDF MA3X701 MA10701) SC-59 MA3X701
MA10701

Abstract: MA3X701
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type Unit: mm 0.40+0.10 ­0.05 For high frequency rectification 0.16+0.10 ­0.06 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o rm r y ila ur at pa tro ble da io tie ub f ta n, n le or s pl ce th th he ea . is e ets se m ren . ay e co ha wa nt ac ve l


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PDF 2002/95/EC) MA3X701 MA10701) MA10701 MA3X701
FC54M

Abstract: FC53M diode cross reference 1s1555 RLS135 "cross reference" diode cross reference 1s2473 1SS1586 1SS211 sanken SE014 toshiba diode "do-41" 1SS2021
Text: -f -K TOSHIBA SANKEN SHINDENGEN MA740 MA721 MPAK I 1SS344 MA748 MA720 MA10701 MA10703


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PDF DO-41 1SS267 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S2092, 1S2460 1S2461, FC54M FC53M diode cross reference 1s1555 RLS135 "cross reference" diode cross reference 1s2473 1SS1586 1SS211 sanken SE014 toshiba diode "do-41" 1SS2021
Not Available

Abstract: No abstract text available
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Schottky Barrier Diodes (SBD) MA3X701 ( MA10701 ) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 700 Non-repetitive peak forward surge current * A °C −55 to +150 IFSM mA 5 IF(AV) V 125 Forward current (Average) V 30 VRRM °C 1.1+0.3 –0.1 30 VR Repetitive peak reverse voltage


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PDF 2002/95/EC) MA3X701 MA10701)
2001 - marking code 62z

Abstract: philips surface mount zener diode v6 1S2473 equivalent marking 68m sot 23-5 DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Text: MA740 MA721 1SS344 MA748 MA720 MA10701 MA10703 SANYO SB02-03Q SB02-03C SB02-03S SB05-05CP SB05-03C/Q


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PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 1S2473 equivalent marking 68m sot 23-5 DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: MA3091 Mini 3P K14 MA3X701 MA10701 Mini 3P K10 MA6X1290G Mini 6P K3 MAZ3100


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PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
AN3962FB

Abstract: MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: No file text available


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PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
3866S

Abstract: transistor a999 bs 7818 -1995 A999 transistor transistor tt 2206 a1535A TT 2206 transistor 8340UAS 2SD 4515 transistor 3866S
Text: No file text available


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PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 A999 transistor transistor tt 2206 a1535A TT 2206 transistor 8340UAS 2SD 4515 transistor 3866S
2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: No file text available


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PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
2009 - mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: No file text available


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PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
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