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2001 - 24825 transistor

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Preliminary specification 2001 Sep 25 Philips Semiconductors Preliminary specification PNP general purpose double transistor FEATURES · 300 mW total power dissipation · Very small 1.6 × 1.2 mm ultra thin package · Self alignment during soldering due to straight leads · Replaces two SC-75/SC-89 packaged transistors on same PCB area · Reduced required PCB area · Reduced pick and place costs. APPLICATIONS ·


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PDF M3D744 SC-75/SC-89 OT666 SCA73 613514/01/pp8 24825 transistor
2002 - BAT960

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Preliminary specification 2002 Jun 24 Philips Semiconductors Preliminary specification Schottky barrier diode BAT960 FEATURES PINNING · High current capability PIN DESCRIPTION · Very low forward voltage 1 cathode · Ultra small plastic SMD package 2 cathode · Flat leads: excellent coplanarity and improved thermal behaviour. 3 anode 4 anode 5 cathode 6 cathode


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PDF M3D744 BAT960 MHC31mail SCA74 613514/01/pp8 BAT960 SMD MARKING E1
2001 - free Latest transistor data

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMX1 NPN general purpose double transistor Product specification Supersedes data of 2001 Aug 30 2001 Nov 07 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES PEMX1 PINNING · 300 mW total power dissipation PIN · Very small 1.6 mm x 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 · Excellent coplanarity due to straight leads 2, 5 base TR1; TR2 · Replaces two SC-75/SC


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PDF M3D744 SC-75/SC-89 SCA73 613514/02/pp8 free Latest transistor data
2002 - SMD MARKING CODE

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2010EV Low VF MEGA Schottky barrier diode Preliminary specification 2002 Jun 24 Philips Semiconductors Preliminary specification Low VF MEGA Schottky barrier diode FEATURES PMEG2010EV PINNING · Forward current: 1 A PIN DESCRIPTION · Reverse voltage: 20 V 1 cathode · Very low forward voltage 2 cathode · Ultra small SMD package 3 anode · Flat leads: excellent coplanarity and improved thermal


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PDF M3D744 PMEG2010EV SCA74 613514/01/pp8 SMD MARKING CODE MHC-310 philips application notes PMEG2010EV smd diode marking F1
2002 - BAT74V

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT74V Schottky barrier double diode Product specification 2002 Sep 02 Philips Semiconductors Product specification Schottky barrier double diode BAT74V FEATURES PINNING · Low forward voltage PIN DESCRIPTION · Low capacitance 1 anode 1 · Ultra small SMD plastic package 2 not connected · Flat leads: excellent coplanarity and improved thermal behaviour. 3 cathode 2 4 anode 2 5 not


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PDF M3D744 BAT74V SCA74 613514/01/pp8 BAT74V EIAJ C-3
2009 - Not Available

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES PEMT1 PINNING · 300 mW total power dissipation PIN · Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 · Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 · Replaces two SC-75/SC


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PDF M3D744 SC-75/SC-89 613514/02/pp6
2001 - PNP TRANSISTOR SOT666

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB4 PNP resistor-equipped double transistor R1 = 10 k, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 10 k, R2 = open FEATURES PEMB4 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package VCEO collector-emitter voltage -50 V ICM peak collector


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PDF M3D744 SC-75/SC-89 SCA73 613514/01/pp8 PNP TRANSISTOR SOT666 MBK120 PEMB4 transistor K 14
2009 - 01082

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT74V Schottky barrier double diode Product data sheet 2002 Sep 02 NXP Semiconductors Product data sheet Schottky barrier double diode BAT74V FEATURES PINNING · Low forward voltage PIN DESCRIPTION · Low capacitance 1 anode 1 · Ultra small SMD plastic package 2 not connected · Flat leads: excellent coplanarity and improved thermal behaviour. 3 cathode 2 4 anode 2 5 not connected 6


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PDF M3D744 BAT74V 613514/01/pp7 01082 NXP SMD diode MARKING CODE BAT74V
2001 - PNP TRANSISTOR SOT666

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMT1 PNP general purpose double transistor Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES PEMT1 PINNING · 300 mW total power dissipation PIN · Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 · Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 · Replaces two SC-75/SC


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PDF M3D744 SC-75/SC-89 SCA73 613514/02/pp8 PNP TRANSISTOR SOT666
2001 - PEMB3

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB3 PNP resistor-equipped double transistor R1 = 4.7 k, R2 = open Preliminary specification 2001 Sep 14 Philips Semiconductors Preliminary specification PNP resistor-equipped double transistor R1 = 4.7 k, R2 = open FEATURES PEMB3 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package VCEO collector-emitter voltage -50 V ICM peak collector


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PDF M3D744 SC-75/SC-89 SCA73 613514/01/pp8 PEMB3 PNP TRANSISTOR SOT666
2009 - Not Available

Abstract:
Text: DISCRETE SEMICONDUCTORS DAT M3D744 PEMX1 NPN general purpose double transistor Product data sheet Supersedes data of 2001 Aug 30 2001 Nov 07 NXP Semiconductors Product data sheet NPN general purpose double transistor FEATURES PEMX1 PINNING • 300 mW total power dissipation PIN • Very small 1.6 mm x 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 • Excellent coplanarity due to straight leads 2, 5 base TR1; TR2 • Replaces two SC-75/SC


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PDF M3D744 SC-75/SC-89 613514/02/pp7
2009 - PBSS4140V

Abstract:
Text: DISCRETE SEMICONDUCTORS DAT M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Oct 19 2002 Mar 20 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140V QUICK REFERENCE DATA FEATURES • 300 mW total power dissipation SYMBOL • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package PARAMETER MAX. UNIT VCEO V −1 A peak collector current −2 A RCEsat • Self alignment


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PDF M3D744 PBSS5140V 613514/02/pp7 PBSS4140V PBSS5140V
2001 - Not Available

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BC847BV NPN general purpose double transistor Product specification 2001 Sep 10 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BC847BV PINNING · 300 mW total power dissipation PIN · Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 handbook, halfpage 6 5 · Excellent coplanarity due


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PDF M3D744 BC847BV SC-75/SC-89 SCA73 613514/01/pp8
2009 - Not Available

Abstract:
Text: DISCRETE SEMICONDUCTORS DAT M3D744 BAT960 Schottky barrier diode Product data sheet Supersedes data of 2002 Jun 24 2003 May 01 NXP Semiconductors Product data sheet Schottky barrier diode BAT960 PINNING FEATURES • High current capability PIN DESCRIPTION • Very low forward voltage 1 cathode • Ultra small plastic SMD package 2 cathode • Flat leads: excellent coplanarity and improved thermal behaviour. 3 anode 4 anode 5 cathode 6


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PDF M3D744 BAT960 613514/02/pp7
2001 - free transistor and ic equivalent data

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low VCEsat NPN transistor Preliminary specification 2001 Nov 05 Philips Semiconductors Preliminary specification 40 V low VCEsat NPN transistor PBSS4140V FEATURES QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 mm x 1.2 mm x 0.55 mm2 ultra thin package VCEO collector-emitter voltage 40 V IC collector current (DC) 1 A ICM peak collector current 2


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PDF M3D744 PBSS4140V SCA73 613514/01/pp12 free transistor and ic equivalent data PBSS4140V PBSS5140V MLD750 PBSS4140 PP12
2001 - Not Available

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH2 NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 47 k, R2 = 47 k FEATURES PEMH2 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 × 1.2 mm ultra thin package VCEO collector-emitter voltage 50 V ICM peak collector current 100 mA TR1


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PDF M3D744 SC-75/SC-89 SCA73 613514/01/pp8
2001 - Not Available

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH9 NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k Product specification Supersedes data of 2001 Oct 22 2001 Nov 07 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1 = 10 k, R2 = 47 k FEATURES PEMH9 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 × 1.2 mm ultra thin package PARAMETER MAX. UNIT VCEO mA NPN - - NPN - - R1


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PDF M3D744 SC-75/SC-89 SCA73 613514/02/pp8
2003 - MHC310

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Product specification Supersedes data of 2002 Jun 24 2003 May 01 Philips Semiconductors Product specification Schottky barrier diode BAT960 FEATURES PINNING · High current capability PIN DESCRIPTION · Very low forward voltage 1 cathode · Ultra small plastic SMD package 2 cathode · Flat leads: excellent coplanarity and improved thermal behaviour. 3 anode 4 anode 5


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PDF M3D744 BAT960 SCA75 613514/02/pp8 MHC310 MHC-310 ua720 BAT960 EIAJ C-3 marking code b9 MHC311 SMD MARKING E1
2009 - Not Available

Abstract:
Text: DISCRETE SEMICONDUCTORS DAT M3D744 PMEG1020EV Ultra low VF MEGA Schottky barrier rectifier Product data sheet 2003 Jul 15 NXP Semiconductors Product data sheet Ultra low VF MEGA Schottky barrier rectifier PMEG1020EV PINNING FEATURES • Forward current: 2 A PIN DESCRIPTION • Reverse voltage: 10 V 1 cathode • Ultra low forward voltage 2 cathode • Ultra small plastic SMD package. 3 anode 4 anode APPLICATIONS 5 cathode • Low


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PDF M3D744 PMEG1020EV 613514/01/pp7
2002 - MARKING CODE 67

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAS40-07V Schottky barrier double diode Product specification 2002 Mar 27 Philips Semiconductors Product specification Schottky barrier double diode BAS40-07V FEATURES PINNING · Low forward voltage PIN DESCRIPTION · Low capacitance 1 anode 1 · Ultra small plastic SMD package 2 not connected · Flat leads: excellent coplanarity and improved thermal behaviour 3 cathode 2 4 anode 2


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PDF M3D744 BAS40-07V SCA74 613514/01/pp8 MARKING CODE 67 BAS40-07V
2002 - 24825

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAS70-07V Schottky barrier double diode Product specification 2002 Jan 17 Philips Semiconductors Product specification Schottky barrier double diode BAS70-07V FEATURES PINNING · Low forward voltage PIN · High reverse voltage 1 anode 1 · Low capacitance 2 not connected · Ultra small plastic SMD package 3 cathode 2 · Flat leads: excellent coplanarity and improved thermal behaviour. 4 anode


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PDF M3D744 BAS70-07V SCA74 613514/01/pp8 24825 BAS70-07V marking CODE 77 smd diode marking 77 SMD MARKING CODE M 4 Diode
2001 - MGU430

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMX1 NPN general purpose double transistor Preliminary specification 2001 Aug 30 Philips Semiconductors Preliminary specification NPN general purpose double transistor FEATURES · 300 mW total power dissipation · Very small 1.6 mm x 1.2 mm ultra thin package · Excellent coplanarity due to straight leads · Replaces two SC-75/SC-89 packaged transistors on same PCB area · Reduced required PCB area · Reduced pick and place costs. handbook, halfpage 6


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PDF M3D744 SC-75/SC-89 SCA73 613514/1000/01/pp8 MGU430 transistor npn double
2001 - PEMB2

Abstract:
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMB2 PNP resistor-equipped double transistor R1 = 47 k, R2 = 47 k Product specification 2001 Sep 14 Philips Semiconductors Product specification PNP resistor-equipped double transistor R1 = 47 k, R2 = 47 k FEATURES PEMB2 QUICK REFERENCE DATA · 300 mW total power dissipation SYMBOL · Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package VCEO collector-emitter voltage -50 V ICM peak collector current -100


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PDF M3D744 SCA73 613514/01/pp8 PEMB2
2009 - Not Available

Abstract:
Text: DISCRETE SEMICONDUCTORS DAT M3D744 PEMT1 PNP general purpose double transistor Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet PNP general purpose double transistor FEATURES PEMT1 PINNING • 300 mW total power dissipation PIN • Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 • Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 • Replaces two


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PDF M3D744 SC-75/SC-89 613514/02/pp6
2009 - Not Available

Abstract:
Text: DISCRETE SEMICONDUCTORS DAT M3D744 PEMZ1 NPN/PNP general purpose transistors Product data sheet Supersedes data of 2001 Sep 25 2001 Nov 07 NXP Semiconductors Product data sheet NPN/PNP general purpose transistors FEATURES PEMZ1 PINNING • 300 mW total power dissipation PIN • Very small 1.6 × 1.2 mm ultra thin package 1, 4 emitter TR1; TR2 • Self alignment during soldering due to straight leads 2, 5 base TR1; TR2 • Replaces two


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PDF M3D744 SC-75/SC-89 613514/02/pp7
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