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2001 - transistor smd YR

Abstract: SMD TRANSISTOR MARKING CODE YR yq smd transistor TRANSISTOR SMD MARKING CODE X D smd transistor marking lp marking code YR SMD ic TRANSISTOR SMD npn MARKING CODE YR smd transistor marking Y.S 2PA1774QJ transistor smd marking ys
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Product specification Supersedes data of 2000 Dec 12 2001 Aug 03 Philips Semiconductors Product specification PNP general purpose transistor 2PA1774J PINNING FEATURES · Power dissipation comparable to SOT23 PIN DESCRIPTION · Low output capacitance 1 base · Low saturation voltage VCEsat 2 emitter · Low current (max. 100 mA) 3 collector · Low voltage (max. 50 V).


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PDF M3D425 2PA1774J SCA73 613514/04/pp8 transistor smd YR SMD TRANSISTOR MARKING CODE YR yq smd transistor TRANSISTOR SMD MARKING CODE X D smd transistor marking lp marking code YR SMD ic TRANSISTOR SMD npn MARKING CODE YR smd transistor marking Y.S 2PA1774QJ transistor smd marking ys
2001 - transistor smd ZR

Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD MARKING CODE transistor SMD BP smd code marking sot23 philips transistor smd code smd transistor marking zr 2PC4617SJ
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES · Power dissipation comparable to SOT23 PIN DESCRIPTION · Low output capacitance 1 base · Low saturation voltage VCEsat 2 emitter · Low current (max. 100 mA) 3 collector · Low voltage (max. 50 V).


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PDF M3D425 2PC4617J SCA73 613514/03/pp8 transistor smd ZR MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA TRANSISTOR SMD MARKING CODE transistor SMD BP smd code marking sot23 philips transistor smd code smd transistor marking zr 2PC4617SJ
2001 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3515F 15 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Jan 26 2001 Sep 21 Philips Semiconductors Product specification 15 V low VCEsat PNP transistor PBSS3515F FEATURES QUICK REFERENCE DATA · Low collector-emitter saturation voltage SYMBOL · High current capabilities VCEO emitter-collector voltage -15 V IC collector current (DC) -500 mA ICM peak collector current -1 A


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PDF M3D425 PBSS3515F SCA73 613514/03/pp8
2001 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS2540F FEATURES QUICK REFERENCE DATA · Low collector-emitter saturation voltage SYMBOL · High current capability VCEO collector-emitter voltage 40 V IC collector current (DC) 500 mA ICM peak collector current 1 A RCEsat


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PDF M3D425 PBSS2540F SCA73 613514/01/pp8
2002 - free transistor and ic equivalent data

Abstract: PDTC144TEF SC18 SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC144TEF NPN resistor-equipped transistor; R1 = 47 k, R2 = open Product specification 2002 Mar 15 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 47 k, R2 = open PDTC144TEF FEATURES QUICK REFERENCE DATA · Built-in bias resistors SYMBOL · 250 mW total power dissipation VCEO collector-emitter voltage 50 V IO output current (DC) 100 mA · Flat leads R1 bias


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PDF M3D425 PDTC144TEF SCA74 613514/01/pp8 free transistor and ic equivalent data PDTC144TEF SC18 SC-89
2003 - free transistor and ic equivalent data

Abstract: PDTC124TEF SC18 SC-89 PDTC124
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124TEF NPN resistor-equipped transistor; R1 = 22 k, R2 = open Product specification 2003 Jan 20 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 22 k, R2 = open PDTC124TEF FEATURES QUICK REFERENCE DATA · Built-in bias resistors SYMBOL · 250 mW total power dissipation VCEO collector-emitter voltage 50 V IO output current (DC) 100 mA · Excellent coplanarity R1


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PDF M3D425 PDTC124TEF SCA75 613514/01/pp8 free transistor and ic equivalent data PDTC124TEF SC18 SC-89 PDTC124
2001 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F 15 V low VCEsat NPN transistor Product specification Supersedes data of 2001 Jan 26 2001 Sep 21 Philips Semiconductors Product specification 15 V low VCEsat NPN transistor PBSS2515F FEATURES QUICK REFERENCE DATA · Low collector-emitter saturation voltage SYMBOL · High current capabilities VCEO collector-emitter voltage 15 V IC collector current (DC) 500 mA ICM peak collector current 1 A


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PDF M3D425 PBSS2515F SCA73 613514/03/pp8
2002 - PDTC144WEF

Abstract: SC18 SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC144WEF NPN resistor-equipped transistor; R1 = 47 k, R2 = 22 k Product specification 2002 Mar 14 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 47 k, R2 = 22 k PDTC144WEF FEATURES QUICK REFERENCE DATA · Built-in bias resistors SYMBOL · 250 mW total power dissipation VCEO collector-emitter voltage 50 V IO output current (DC) 100 mA · Flat leads R1 bias


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PDF M3D425 PDTC144WEF SCA74 613514/01/pp8 PDTC144WEF SC18 SC-89
1999 - transistor smd ZR

Abstract: SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE al 2PC4617JR SC-89 2PC4617JQ 2PC4617J
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 1999 May 04 Philips Semiconductors Preliminary specification NPN general purpose transistor 2PC4617J FEATURES PINNING · Power dissipation comparable to SOT23 PIN DESCRIPTION · Low output capacitance 1 base · Low saturation voltage VCEsat 2 emitter · Low current (max. 100 mA) 3 collector · Low voltage


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PDF M3D425 2PC4617J SCA63 115002/00/02/pp8 transistor smd ZR SMD MARKING CODE TRANSISTOR 501 MARKING SMD PNP TRANSISTOR Zr smd transistor marking zr TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE al 2PC4617JR SC-89 2PC4617JQ 2PC4617J
2002 - PDTA143TEF

Abstract: SC18 SC-89 marking code 10 free transistor and ic equivalent data PDTA143
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA143TEF PNP resistor-equipped transistor; R1 = 4.7 k, R2 = open Product specification 2002 Jan 15 Philips Semiconductors Product specification PNP resistor-equipped transistor; R1 = 4.7 k, R2 = open PDTA143TEF FEATURES QUICK REFERENCE DATA · Built-in bias resistors SYMBOL · Simplification of circuit design VCEO collector-emitter voltage -50 V IO output current (DC) -100 mA R1 bias resistor 4.7 k


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PDF M3D425 PDTA143TEF SCA74 613514/01/pp8 PDTA143TEF SC18 SC-89 marking code 10 free transistor and ic equivalent data PDTA143
2002 - PDTA143XEF

Abstract: SC18 SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA143XEF PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 k Product specification 2002 Mar 14 Philips Semiconductors Product specification PNP resistor-equipped transistor; R1 = 4.7 k, R2 = 10 k PDTA143XEF FEATURES QUICK REFERENCE DATA · Built-in bias resistors SYMBOL · 250 mW total power dissipation VCEO collector-emitter voltage -50 V IO output current (DC) -100 mA · Flat leads R1 bias


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PDF M3D425 PDTA143XEF SCA74 613514/01/pp8 PDTA143XEF SC18 SC-89
2002 - PDTA114YEF

Abstract: SC18 SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114YEF PNP resistor-equipped transistor R1 = 10 k; R2 = 47 k Product specification 2002 Mar 15 Philips Semiconductors Product specification PNP resistor-equipped transistor R1 = 10 k; R2 = 47 k PDTA114YEF FEATURES QUICK REFERENCE DATA · Built-in bias resistors SYMBOL · 250 mW total power dissipation VCEO collector-emitter voltage -50 V IO output current (DC) -100 mA · Flat leads R1 bias


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PDF M3D425 PDTA114YEF SCA74 613514/01/pp8 PDTA114YEF SC18 SC-89
2003 - MLC359

Abstract: Diode smd marking 44 SC-89 1PS89SB14 1PS89SB15 1PS89SB16
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes Product specification Supersedes data of 1998 Nov 10 2003 Apr 28 Philips Semiconductors Product specification 1PS89SB14; 1PS89SB15; 1PS89SB16 Schottky barrier double diodes FEATURES PINNING · Power dissipation comparable to SOT23 1PS89SBxx PIN 3 14 · Low forward voltage 16 a1 1 · Guard ring protected 15 a1 k1 2 k2 a2 3 ·


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PDF M3D425 1PS89SB14; 1PS89SB15; 1PS89SB16 1PS89SBxx MLC358 1PS89SB14 MLC359 Diode smd marking 44 SC-89 1PS89SB15 1PS89SB16
2002 - SC18

Abstract: PDTC143TEF SC-89 M3D425 0912-7 "MARKING CODE 11"
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC143TEF NPN resistor-equipped transistor; R1 = 4.7 k, R2 = open Product specification 2002 Jan 15 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 4.7 k, R2 = open PDTC143TEF FEATURES QUICK REFERENCE DATA · Built-in bias resistors SYMBOL · Simplification of circuit design VCEO collector-emitter voltage 50 V IO output current (DC) 100 mA R1 bias resistor 4.7 k


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PDF M3D425 PDTC143TEF SCA74 613514/01/pp8 SC18 PDTC143TEF SC-89 M3D425 0912-7 "MARKING CODE 11"
2002 - PDTC124EEF

Abstract: SC18 SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC124EEF NPN resistor-equipped transistor; R1 = 22 k, R2 = 22 k Product specification 2002 Mar 14 Philips Semiconductors Product specification NPN resistor-equipped transistor; R1 = 22 k, R2 = 22 k PDTC124EEF FEATURES QUICK REFERENCE DATA · Built-in bias resistors SYMBOL · 250 mW total power dissipation VCEO collector-emitter voltage 50 V IO output current (DC) 100 mA · Flat leads R1 bias


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PDF M3D425 PDTC124EEF SCA74 613514/01/pp8 PDTC124EEF SC18 SC-89
1999 - SMD TRANSISTOR MARKING CODE YR

Abstract: MARKING SMD PNP TRANSISTOR R 172 TRANSISTOR SMD MARKING CODE rd marking code UL SMD Transistor SC-89 BP317 2PC4617J 2PA1774JS TRANSISTOR SMD npn MARKING CODE YR 2PA1774JQ
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PA1774J PNP general purpose transistor Preliminary specification Supersedes data of 1998 Nov 10 1999 May 04 Philips Semiconductors Preliminary specification PNP general purpose transistor 2PA1774J FEATURES PINNING · Power dissipation comparable to SOT23 PIN DESCRIPTION · Low output capacitance 1 base · Low saturation voltage VCEsat 2 emitter · Low current (max. 100 mA) 3 collector · Low voltage


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PDF M3D425 2PA1774J SCA63 115002/00/02/pp8 SMD TRANSISTOR MARKING CODE YR MARKING SMD PNP TRANSISTOR R 172 TRANSISTOR SMD MARKING CODE rd marking code UL SMD Transistor SC-89 BP317 2PC4617J 2PA1774JS TRANSISTOR SMD npn MARKING CODE YR 2PA1774JQ
2001 - PDTA124EEF

Abstract: SC-89 BP317 PDTA124E
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING · Built-in bias resistors R1 and R2 (typical 22 k each) PIN DESCRIPTION · Simplification of circuit design 1 base/input · Reduces number of components and board space. 2 emitter/ground (+) 3 collector/output APPLICATIONS


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PDF M3D425 PDTA124EEF 613514/01/pp8 PDTA124EEF SC-89 BP317 PDTA124E
1998 - 339 marking code SMD transistor

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor FEATURES · Power dissipation comparable to SOT23 · Built-in bias resistors R1 and R2 (typ. 10 k each) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit


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PDF M3D425 PDTC114EEF SC-89 OT490) PDTA114EEF. SCA60 115104/00/01/pp8 339 marking code SMD transistor
1999 - TRANSISTOR SMD MARKING CODE rd

Abstract: TRANSISTOR SMD MARKING CODE SP marking code UL SMD Transistor SMD TRANSISTOR MARKING DE TRANSISTOR SMD CODE PACKAGE SOT23 PDTA114EEF PDTC114EEF SC-89 SMD transistor MARKING CODE 213
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC114EEF NPN resistor-equipped transistor Product specification Supersedes data of 1998 Nov 11 1999 May 31 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EEF FEATURES · Power dissipation comparable to SOT23 · Built-in bias resistors R1 and R2 (typ. 10 k each) handbook, halfpage 3 3 R1 · Simplification of circuit design 1 · Reduces number of components and board space. R2 1 2 2


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PDF M3D425 PDTC114EEF MAM412 SC-89; OT490) 115002/02/pp8 TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE SP marking code UL SMD Transistor SMD TRANSISTOR MARKING DE TRANSISTOR SMD CODE PACKAGE SOT23 PDTA114EEF PDTC114EEF SC-89 SMD transistor MARKING CODE 213
1999 - TRANSISTOR SMD MARKING CODE 3f

Abstract: smd TRANSISTOR code marking 3F pb 3g smd transistor TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 3G BC857AF BC856AF BC848F BC847F TRANSISTOR SMD MARKING CODE 3L
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC856F; BC857F; BC858F series PNP general purpose transistors Preliminary specification Supersedes data of 1998 Nov 10 1999 May 21 Philips Semiconductors Preliminary specification PNP general purpose transistors BC856F; BC857F; BC858F series PINNING FEATURES · Power dissipation comparable to SOT23 PIN DESCRIPTION · Low current (max. 100 mA) 1 base · Low voltage (max. 65 V). 2 emitter 3 collector APPLICATIONS


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PDF M3D425 BC856F; BC857F; BC858F SC-89 OT490) BC846F, TRANSISTOR SMD MARKING CODE 3f smd TRANSISTOR code marking 3F pb 3g smd transistor TRANSISTOR SMD MARKING CODE rd TRANSISTOR SMD MARKING CODE 3G BC857AF BC856AF BC848F BC847F TRANSISTOR SMD MARKING CODE 3L
1998 - TRANSISTOR SMD CODE PACKAGE SOT23 501

Abstract: SMD TRANSISTOR MARKING 3B TRANSISTOR SMD MARKING CODE 3G BC857F 5- pin smd IC 358
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC856F; BC857F; BC858F series PNP general purpose transistors Preliminary specification 1998 Nov 10 Philips Semiconductors Preliminary specification PNP general purpose transistors FEATURES · Power dissipation comparable to SOT23 · Low current (max. 100 mA) · Low voltage (max. 65 V). APPLICATIONS · General purpose switching and amplification especially in portable equipment. BC856F; BC857F; BC858F series PINNING PIN 1 2 3 base emitter collector


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PDF M3D425 BC856F; BC857F; BC858F MAM411 SC-89 OT490) TRANSISTOR SMD CODE PACKAGE SOT23 501 SMD TRANSISTOR MARKING 3B TRANSISTOR SMD MARKING CODE 3G BC857F 5- pin smd IC 358
2001 - PBSS2515F

Abstract: PBSS3515F SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2515F NPN BISS transistor Product specification Supersedes data of 2000 Oct 25 2001 Jan 26 Philips Semiconductors Product specification NPN BISS transistor PBSS2515F PINNING FEATURES · Low VCEsat PIN · High current capabilities. DESCRIPTION 1 emitter 3 APPLICATIONS base 2 collector · Heavy duty battery powered equipment (automotive, telecom and audio video) such as motor and lamp drivers · VCEsat


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PDF M3D425 PBSS2515F 613514/02/pp8 PBSS2515F PBSS3515F SC-89
1998 - 339 marking code SMD transistor

Abstract: TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor Preliminary specification 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor FEATURES · Power dissipation comparable to SOT23 · Built-in bias resistors R1 and R2 (typ. 10 k each) · Simplification of circuit design · Reduces number of components and board space. APPLICATIONS · Especially suitable for space reduction in interface and driver circuits · Inverter circuit


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PDF M3D425 PDTA114EEF SC-89 OT490) PDTC114EEF. SCA60 115104/00/01/pp8 339 marking code SMD transistor TRANSISTOR SMD MARKING CODE SP TRANSISTOR SMD MARKING CODE dk MARKING CODE 03 JAPAN transistor 5- pin smd IC 358
1999 - TRANSISTOR SMD MARKING CODE 1l

Abstract: BC847BF BC848BF BC846BF BC848F BC858F BC857F BC856F BC847F SMD TRANSISTOR MARKING 1B
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 BC846F; BC847F; BC848F series NPN general purpose transistors Preliminary specification Supersedes data of 1998 Nov 10 1999 May 18 Philips Semiconductors Preliminary specification NPN general purpose transistors BC846F; BC847F; BC848F series FEATURES PINNING · Power dissipation comparable to SOT23 PIN DESCRIPTION · Low current (max. 100 mA) 1 base · Low voltage (max. 65 V). 2 emitter 3 collector APPLICATIONS


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PDF M3D425 BC846F; BC847F; BC848F SC-89 OT490) 115002/00/02/pp8 TRANSISTOR SMD MARKING CODE 1l BC847BF BC848BF BC846BF BC858F BC857F BC856F BC847F SMD TRANSISTOR MARKING 1B
1999 - MDA930

Abstract: PDTC123JEF SC-89
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor Preliminary specification 1999 May 27 Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES · Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) handbook, halfpage · Simplification of circuit design 3 3 R1 1 · Reduces number of components and board space. R2 1 Top view APPLICATIONS · Especially suitable for space


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PDF M3D425 PDTC123JEF MAM412 SC-89; OT490) 115002/01/pp8 MDA930 PDTC123JEF SC-89
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