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Power Diodes

Abstract: M3D118 power diode package SOD106A "Philips Semiconductors" Cross-Reference SOD115 TO220 SMALL heatsink M3D121 SSOP20 package IMPLOTEC
Text: leads M3D354 1998 Dec 07 2 PAGE Philips Semiconductors Power Diodes OUTLINE , ; axial leaded; 2 leads M3D354 SOD64 Hermetically sealed glass package; axial leaded; 2 leads , package; axial leaded; 2 leads M3D354 SOD120 Hermetically sealed glass package; axial leaded; 2


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PDF M3D116 M3D300 OT429 M3D314 OT457 M3D302 DO-214AC OD106 SC-46 Power Diodes M3D118 power diode package SOD106A "Philips Semiconductors" Cross-Reference SOD115 TO220 SMALL heatsink M3D121 SSOP20 package IMPLOTEC
1999 - M3D423

Abstract: za sot353 M3D452 SOD70 package semiconductor packages SOT195 semiconductors CROSS-REFERENCE Chapter 8 Philips SOD-61A SOD88B
Text: sealed glass package; axial leaded; 2 leads 2-6 M3D354 May 1999 1-2 Philips , M3D354 SOD61AD2 Hermetically sealed glass package; axial leaded; 2 leads 2-7 M3D354 , 13 M3D354 SOD88B Hermetically sealed glass package; axial leaded; 2 leads 2 - 14 , SOD119AB Hermetically sealed glass package; axial leaded; 2 leads 2 - 24 M3D354 SOD120


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PDF M3D176 SC-88 SC-88A SC-89 OT128B OT346 OT143R OT428 OT186 OT323 M3D423 za sot353 M3D452 SOD70 package semiconductor packages SOT195 semiconductors CROSS-REFERENCE Chapter 8 Philips SOD-61A SOD88B
1998 - power DIODES

Abstract: M3D423 M3D333 TO-220F JEDEC M3D087 TO220 SMALL heatsink "Philips Semiconductors" Cross-Reference M3D295 SOD115 M3D117
Text: SOD119ABB Hermetically sealed glass package; axial leaded; 2 leads M3D354 1998 Nov 19 3


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PDF M3D116 OT428 M3D300 OT429 M3D314 OT457 M3D302 DO-214AC MS-013AC power DIODES M3D423 M3D333 TO-220F JEDEC M3D087 TO220 SMALL heatsink "Philips Semiconductors" Cross-Reference M3D295 SOD115 M3D117
2001 - PHILIPS BYX132G

Abstract: BYX132G
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132G High-voltage car ignition diode Product specification Supersedes data of 2000 Feb 29 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX132G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AB2 is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX132G OD61AB2 SCA73 613510/04/pp8 PHILIPS BYX132G BYX132G
2001 - Electronic car ignition circuit

Abstract: PHILIPS BYX134G
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX134G High-voltage car ignition diode Product specification Supersedes data of 2000 Feb 29 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX134G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AC2 is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX134G OD61AC2 SCA73 613510/04/pp8 Electronic car ignition circuit PHILIPS BYX134G
2001 - car ignition

Abstract: PHILIPS BYX133GL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133GL High-voltage car ignition diode Product specification Supersedes data of 2000 Jan 13 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GL FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD119AB is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX133GL OD119AB SCA73 613510/03/pp8 car ignition PHILIPS BYX133GL
2000 - philips 23

Abstract: BP317 BYX133GL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133GL High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX133GL FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD119AB is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX133GL OD119AB 135002/02/pp4 philips 23 BP317 BYX133GL
2000 - BP317

Abstract: BYX132GL
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132GL High-voltage car ignition diode Product specification 2000 Jan 13 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GL FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD119AB is hermetically sealed and fatigue free as coefficients of expansion of


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PDF M3D354 BYX132GL OD119AB 135002/01/pp4 BP317 BYX132GL
2001 - PHILIPS BYX133G

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133G High-voltage car ignition diode Product specification Supersedes data of 2000 Feb 29 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX133G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AB2 is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX133G OD61AB2 SCA73 613510/04/pp8 PHILIPS BYX133G
2001 - PHILIPS BYX135G

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX135G High-voltage car ignition diode Product specification Supersedes data of 2000 Feb 29 2001 Oct 01 Philips Semiconductors Product specification High-voltage car ignition diode BYX135G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AD2 is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX135G OD61AD2 SCA73 613510/04/pp8 PHILIPS BYX135G
2001 - PHILIPS BYX132GL

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132GL High-voltage car ignition diode Product specification Supersedes data of 2000 Jan 13 2001 Oct 02 Philips Semiconductors Product specification High-voltage car ignition diode BYX132GL FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD119AB is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX132GL OD119AB SCA73 613510/02/pp8 PHILIPS BYX132GL
1998 - BYX13

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133GL High-voltage car ignition diode Product specification 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. handbook, k halfpage BYX133GL of expansion of all used parts are matched. The package is designed to be used in an insulating


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PDF M3D354 BYX133GL BYX133GL OD119AB MAM420 SCA60 135106/00/01/pp4 BYX13
2000 - Electronic car ignition circuit

Abstract: BP317 BYX134G
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX134G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX134G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AC2 is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX134G OD61AC2 603502/03/pp8 Electronic car ignition circuit BP317 BYX134G
2000 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX105G; BYX106G; BYX107G; BYX108G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers BYX105G; BYX106G; BYX107G; BYX108G FEATURES · Glass passivated · High maximum operating temperature · Low leakage current handbook, halfpage k a ·


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PDF M3D354 BYX105G; BYX106G; BYX107G; BYX108G MSB026
2000 - philips 23

Abstract: BP317 BYX133G
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX133G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AB2 is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX133G OD61AB2 603502/03/pp8 philips 23 BP317 BYX133G
1998 - str 6707

Abstract: BP317 79905 SCA60 D-20097 SOD-61A
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132G High-voltage car ignition diode Product specification Supersedes data of 1998 Nov 27 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. APPLICATIONS · Car ignition systems · Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass


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PDF M3D354 BYX132G OD61AB2 BYX132G SCA60 135106/00/02/pp4 str 6707 BP317 79905 SCA60 D-20097 SOD-61A
2000 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX101G; BYX102G; BYX103G; BYX104G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers BYX101G; BYX102G; BYX103G; BYX104G FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed


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PDF M3D354 BYX101G; BYX102G; BYX103G; BYX104G MSB026
2000 - BP317

Abstract: BYX132G
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX132G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX132G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AB2 is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX132G OD61AB2 603502/03/pp4 BP317 BYX132G
1998 - str 6707

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX133G High-voltage car ignition diode Product specification Supersedes data of 1998 Nov 27 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. APPLICATIONS · Car ignition systems · Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass


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PDF M3D354 BYX133G OD61AB2 BYX133G SCA60 135106/00/02/pp4 str 6707
1998 - SOD-61A

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX134G High-voltage car ignition diode Product specification Supersedes data of 1998 Nov 27 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. APPLICATIONS · Car ignition systems · Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass


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PDF M3D354 BYX134G OD61AC2 BYX134G SCA60 135106/00/02/pp4 SOD-61A
1998 - str 6707

Abstract: BP317 SOD-61A
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX135G High-voltage car ignition diode Product specification Supersedes data of 1998 Nov 27 1998 Dec 04 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. APPLICATIONS · Car ignition systems · Automotive applications with extreme temperature requirements. DESCRIPTION Rugged glass


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PDF M3D354 BYX135G OD61AD2 BYX135G SCA60 135106/00/02/pp4 str 6707 BP317 SOD-61A
2000 - Electronic car ignition circuit

Abstract: philips 23 BP317 BYX135G
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX135G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode BYX135G FEATURES DESCRIPTION · Glass passivated Rugged glass package, using a high temperature alloyed construction. · High maximum operating temperature · Low leakage current The SOD61AD2 is hermetically sealed and fatigue free as coefficients of


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PDF M3D354 BYX135G OD61AD2 603502/03/pp8 Electronic car ignition circuit philips 23 BP317 BYX135G
2000 - 12NC philips diode 93

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX135G High-voltage car ignition diode Product specification Supersedes data of 1998 Dec 04 2000 Feb 29 Philips Semiconductors Product specification High-voltage car ignition diode FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability. APPLICATIONS · Car ignition systems · Automotive applications with extreme temperature requirements. k halfpage handbook, a


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PDF M3D354 BYX135G MBK908 BYX135G OD61AD2 12NC philips diode 93
2000 - BYX101G "cross reference"

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX101G; BYX102G; BYX103G; BYX104G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability · Recovery times ranging from 600 to


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PDF M3D354 BYX101G; BYX102G; BYX103G; BYX104G BYX101G "cross reference"
2000 - Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D354 BYX105G; BYX106G; BYX107G; BYX108G High-voltage soft-recovery controlled avalanche rectifiers Product specification Supersedes data of 1996 Oct 03 2000 Jan 13 Philips Semiconductors Product specification High-voltage soft-recovery controlled avalanche rectifiers FEATURES · Glass passivated · High maximum operating temperature · Low leakage current · Excellent stability · Guaranteed avalanche energy absorption capability · Recovery times ranging from 600 to


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PDF M3D354 BYX105G; BYX106G; BYX107G; BYX108G
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