The Datasheet Archive

M3D2271 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: HARRIS SENICOND SECTOR t>AE D M3D2271 005110(3 115 HAS H a r r is SEMICONDUCTOR PCF14N05LW PCF14NÛ5LD N-Channel MOS Chip Die J a n u a ry19 9 3 Features · Passivated · Contact Metallization · Gate and Source - Aluminum Silicon · Drain - Tri-Metal (Al-Ti-Ni) · Die Visually Inspected to a 1.0% AQL Mil-Std-750, Method 2072 · Harris Packaged Products Manufactured From This Die: - RFD14N05L - RFD14N05LSM - RFP14N05L · PCF14N05LW Die Shipped in Unsawn Probed Wafer Form · PCF14N05LD Die Shipped In


OCR Scan
PDF M3D2271 PCF14N05LW PCF14N Mil-Std-750, RFD14N05L RFD14N05LSM RFP14N05L PCF14N05LD 1-800-4-HARRIS
Not Available

Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR File Number 2347 SbE ]> M3D2271 0G4DÖ03 Tb? HHAS D44Q Series T -3 3 -O S Silicon N-P-N Transistors For Switching and Linear Applications Features: Very low collector saturation voltage mExcellent linearity Fast switching TERMINAL DESIGNATIONS o 9 2 C 5 -3 9 9 6 9 JEDEC TO-220AB MAXIMUM RATINGS (TA = 25° C) (unless otherwise specified) RATING Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current - Continuous Base


OCR Scan
PDF M3D2271 O-220AB D44Q1 D44Q3 T-33-U5
CDIP2-T14

Abstract: 5962F9670301VCC 5962F9670301VXC ACS03HMSR ACS03MS CDFP3-F14 y2c smd SMD 1Ft Y2612
Text: (7) _J (8) GND Y3 M3D2271 OObMflTb 343 Spec Number 518779 Powered by ICminer.com Electronic-Library


OCR Scan
PDF ACS03MS MIL-PRF-38535 1730mm 2010mm 125kA 125kA 10sA/cm2 110ftm CDIP2-T14 5962F9670301VCC 5962F9670301VXC ACS03HMSR CDFP3-F14 y2c smd SMD 1Ft Y2612
80c85

Abstract: HS80C85
Text: , 11 -55°C, +25°C, +125°C 70 ns Spec Number 518053 M3D2271 0 0 b 5 7 2 7 T7E 2 HS , Table 2. TABLE 5. BURN-IN DELTA PARAMETERS (+25°C; In Accordance W ith SMD) Spec Number M3D2271 G


OCR Scan
PDF MIL-PRF-38535 IL-STD-1835 CDIP2-T16 HS-54C 0b573D 80c85 HS80C85
M3D2271

Abstract: RURD820 RURD810 RURD815
Text: SbE D August 1991 M3D2271 HARRIS SEMICOND SECTOR 00423^6 T2Q «HAS Features • Ultrafast Recovery Time (trr < 35ns) • Low Forward Voltage • Low Thermal Resistance • Planar Design • Wire-Bonded Construction Applications • General Purpose • Power Switching Circuits to 100kHz • Full-Wave Rectification Description The RURD810, RURD815, RURD820 are low forward voltage drop ultrafast rectifiers (trr < 35ns). They use a glass passivated ion-implanted, epitaxial construction. These devices


OCR Scan
PDF M3D2271 100kHz RURD810, RURD815, RURD820 M3D2271 RURD810 RURD815
HFA3924

Abstract: QPSK transceiver 2.4ghz circuit diagram of 2.4ghz rf transmitter and receiver circuit diagram of 2.4ghz rf transmitter 802.11 2.4ghz rf receiver direct conversion 2.4ghz receiver DSSS 2.4ghz rf transmitter and receiver direct sequence spread spectrum DQPSK dsss modulator
Text: Number 4063.1 M3D2271 00b4Qa4 374 PRISMTM 2.4GHz Chip Set Typical 802.11f DS-PHY


OCR Scan
PDF HSP3824; HFA3724; HFA3624; HFA3524 HFA3924. 1-800-4-HARRIS HFA3924 QPSK transceiver 2.4ghz circuit diagram of 2.4ghz rf transmitter and receiver circuit diagram of 2.4ghz rf transmitter 802.11 2.4ghz rf receiver direct conversion 2.4ghz receiver DSSS 2.4ghz rf transmitter and receiver direct sequence spread spectrum DQPSK dsss modulator
HCT4046A equivalent

Abstract: No abstract text available
Text: - 1506 C- 0 3 .5-183 High-Reliability High-Speed CMOS Logic ICs 37E D M3D2271


OCR Scan
PDF CD54HC4046A/3A CD54HCT4046A/3A CD54HC/HCT4046A CD54HC/HCT4046A 2k-47k CD54HC4049/icon CD54HG4050 -o92C HCT4046A equivalent
F18N10CS

Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Text: 10CSVM , R F B 18N 70C S H M SbE D WË M3D2271 0 0 4 2 5 n 713 H H A S T-39-90 TIME IN


OCR Scan
PDF 43GE271 RFB18N10CS/ 1810CS01 RFB18N10CS, RFB18N10CSVM, RFB18N10CSHM AN7254 AN7260. FB78N70CS, T-39-90 F18N10CS n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
CDM6116

Abstract: No abstract text available
Text: M3D2271 0D2b227 S HAS High-Reliability CMOS LSI Devices , SEMICOND SECTOR 37E D M3D2271 0G2b22t i 2 «HAS High-Reliability CMOS LSI D evices


OCR Scan
PDF 43QE271 QG2b224 CDM6116BC/3 2048-Word 24-pin -l/03 -l/08 92CS-40498 92CW-40497 CDM6116
bdy56

Abstract: No abstract text available
Text: File Num ber 1215 BDY55, BDY56 HARRIS SEMICOND SECTOR 5bE J> m M3D2271 GQ4D7Q3 Oflb HAS High-Current, High-Power, High-Speed Silicon N-P-N Planar Transistors Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications Features: ■Maximum operating area curves for dc and pulse operation ■Large-signal power amplification ■High-current fast switching TERMINAL DESIGNATIONS c The high current-handling capability of these transistors


OCR Scan
PDF BDY55, BDY56 M3D2271 92LS-I464 bdy56
RUR30100

Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
Text: – M3D2271 00423^ ISA «HAS Specifications RUR307Ö, RUR3080, RUR30B0, RUR30100 - T-03-19 Electrical


OCR Scan
PDF 43D2571 110ns) RUR3070, RUR3080, RUR3090, RUR30100 RUR3080. RUR3090RUR30100 rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
RCA 40408

Abstract: RCA-40406 rca 40411 40408 rca 40407 npn 40411 rca 40406 40406 40411 224Z
Text: J HAS 2 3 Power Transistors 40406, 40407, 40408, 40411 M3D2271 002D107 « t tS -


OCR Scan
PDF M30S271 GG2Q103 RCA-40406, 15tput M3D2271 002D107 RCA 40408 RCA-40406 rca 40411 40408 rca 40407 npn 40411 rca 40406 40406 40411 224Z
BD183

Abstract: D182B bd182 BD181 bd 183
Text: , BD183 M3D2271 002G11S 92CSH2J04ÄI SEMICOND SECTOR 27E D W Ê Fig. 4 - T


OCR Scan
PDF BD181, BD182, BD183 430S271 BD182. 92CS-I9440 BD181 BD183. BD183 D182B bd182 bd 183
Not Available

Abstract: No abstract text available
Text: 2k-47k ohms. CD54HCT563/3A -07 I HAS 37E D ■M3D2271 □ 0 2 S c ìflb 4 IHAS


OCR Scan
PDF 43D2271 CD54HC541/3A CD54HCT541/3A 2k-47k
ican-6466

Abstract: c04069 C04049 CD4069UB ICAN-6539 4069 CMOS hex inverter CD4069U8 cd4009 hex inverter ic CI 4069 cd4u
Text: SEfUCOND SECTOR 1+4E D M3D2271 0037500 1 ¡HAS CD4069UB Types T-W-Äl STATIC ELECTRICAL


OCR Scan
PDF M3DS271 QQ374TÃ CD4069UB 20-Voit CD4Q09 C04049 TheCD4069UB-Series 14-lead ican-6466 c04069 ICAN-6539 4069 CMOS hex inverter CD4069U8 cd4009 hex inverter ic CI 4069 cd4u
Not Available

Abstract: No abstract text available
Text: M3D2271 D 0 2 b n b 2 HAS _High-Reliability Advanced CMOS Logic ICs Recent Additions


OCR Scan
PDF 43G2271 CD54AC649/3A CD54ACT649/3A CD54AC649 CD54ACT649
M3D2271

Abstract: No abstract text available
Text: ASSIGNMENT 6-21 1583 A—10 37E D ■M3D2271 □02bQcH M Ml HAS High-Reliability Advanced CMOS Logic ICs


OCR Scan
PDF 43D2271 02bQcifl CD54AC08/3A CD54ACT08/3A M3D2271
RUR3060

Abstract: RUR3040 RUR3050 power supply 12v 1a
Text: SbE » ■M3D2271 0042312 S02 HARRIS SEMICOND SECTOR May 1991 IHAS Features • Ultrafast with Soft Recovery Characteristic (trr < 55ns) • +175°C Rated Junction Temperature ■Reverse Voltage Up to 600V • Avalanche Energy Rated Applications • Switching Power Supply • Power Switching Circuits • General Purpose Description RUR3040, RUR3050, RUR3060 are ultrafast diodes (trr < 55ns) with soft recovery characteristics (ta/tjj » 1). They have a low forward voltage drop and are of


OCR Scan
PDF M3D2271 RUR3040, RUR3050, RUR3060 RUR3040 RUR3050 power supply 12v 1a
Not Available

Abstract: No abstract text available
Text: 37E D High-Reliability High-Speed CMOS Logic ICs M3D2271 Ga2bQ21 0 HARRIS SEfllCOND SECTOR CD54HC4049/3A ""P 5 2 .- t í Switching Speed (Limits with black dots (•) are tested 100%.) SWITCHING CHARACTERISTICS (CL = 50 pF, Input t„ t, = 6 ns) CHARACTERISTIC SYMBOL Propagation Delay n A to n Y tp L H tp H L Transition Time • Input Capacitance Cl 25 C HC Vcc V 2 4.5 6 2 4.5 6 Min. — — — Burn-In Test-Circuit Connections Static


OCR Scan
PDF M3D2271 Ga2bQ21 CD54HC4049/3A CD54HC4049 CD54HC4051/3A CD54HCT4051/3A
kc 637

Abstract: No abstract text available
Text: HARRIS SEÎIICOND SECTOR m HARRIS U U S E M I C O N D U C T O R bßE » ■M3D2271 D O S D n S HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V • V CE(ON) ßb4 « H A S TOP VIEW 2.5V > EMITTER COLLECTOR (FLANGE) • Tn 1ns, 0.5ns ► COLLECTOR • Low On-State


OCR Scan
PDF M3D2271 HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, O-218AC M302271 HGTH12N40C1 HGmi2N40C1 HGTP10N40C1 kc 637
Not Available

Abstract: No abstract text available
Text: 1988 12-88 HARRIS SEMICON]) SECTOR SflE D ■M3D2271 0D45752 221 2N7297D, 2N7297R, 2N7297H -


OCR Scan
PDF FRM450 M3GES71 D04S741 2N7297D, 2N7297R 2N7297H 100KRAD 300KRAD 1000KRAD 3000KRAD
Not Available

Abstract: No abstract text available
Text: 0.15ns per pF. 3. TAVQV = TELQV + TAVEL. M3D2271 00 bö3 1 0 717 HM-6551/883 TABLE 3. HM , only. _ M3D2271 00bö315 STT ■9 ' A6 Q3 A7 GND D3


OCR Scan
PDF MIL-STD883 HM-6551/883 100kHz HM-6551/883 M3D2271
YS100

Abstract: No abstract text available
Text: 1MHz. 2-402 HARRIS SEMICOND SECTOR Test Circuit blE D HA-2840 M3D2271 00Mb575 14S H


OCR Scan
PDF HA-2840 h1993 HA-2840 25V/ns 600MHz 430B271 004b575 YS100
CA3725

Abstract: RCA8863C RCA68
Text: information necessary for wgrst-case design. 2N6771,2N6772,2N6773 SbE ® M3D2271 00HDbS2 flT4 LIMITS


OCR Scan
PDF 4302E71 2N6771 2N6772 2N6773 O-220AB 2N6771, 2N6772, 2N6773* CA3725 RCA8863C RCA68
Not Available

Abstract: No abstract text available
Text: ) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 175°C M3D2271 □□b?235 211


OCR Scan
PDF RHRP6120CC O-220AB 00b7237
Previous 1 2 3 ... 5 6 7 Next
Supplyframe Tracking Pixel