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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
AM3D-0505DH30Z Aimtec Sager - $5.06 $4.11
AM3D-0505DH30Z Aimtec Avnet - $4.59 $3.79
AM3D-0505DZ Aimtec Sager - $5.06 $4.11
AM3D-0505DZ Aimtec Avnet - $4.59 $3.79
AM3D-0505SH30Z Aimtec Avnet - $4.59 $3.79
AM3D-0505SH30Z Aimtec Sager - $5.06 $4.11
AM3D-0505SH30Z Aimtec TME Electronic Components 157 $5.40 $4.61
AM3D-0505SZ Aimtec Sager - $5.06 $4.11
AM3D-0505SZ Aimtec TME Electronic Components 17 $7.86 $6.62
AM3D-0505SZ Aimtec Avnet - $4.59 $3.79
AM3D-0509DH30Z Aimtec Sager - $5.06 $4.11
AM3D-0509DH30Z Aimtec Avnet - $4.59 $3.79
AM3D-0509DZ Aimtec Sager - $5.06 $4.11
AM3D-0509DZ Aimtec Avnet - $4.59 $3.79
AM3D-0509SH30Z Aimtec Avnet - $4.59 $3.79
AM3D-0509SH30Z Aimtec Sager - $5.06 $4.11
AM3D-0509SZ Aimtec Avnet - $4.59 $3.79
AM3D-0509SZ Aimtec Sager - $5.06 $4.11

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M3D050 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - BA482

Abstract: BA483 BA484 Ba482 diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification Supersedes data of January 1982 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Band-switching diodes Product specification BA483 has been discontinued BA482; BA483; BA484 FEATURES DESCRIPTION · Continuous reverse voltage: max. 35 V Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO


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PDF M3D050 BA482; BA483; BA484 BA483 DO-34) MAM156 BA482 BA484 Ba482 diode
BAT86

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BAT86 Schottky barrier diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diode BAT86 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO


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PDF M3D050 BAT86 DO-34) BAT86
1996 - C15 DO-34

Abstract: MAM159 BB417 DO-34 PACKAGE
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D050 BB417 UHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode BB417 FEATURES · Excellent linearity k handbook, halfpage a · Hermetically sealed leaded glass SOD68 (DO-34) package MAM159 · C15: 3 pF; ratio: 3.5. Cathode side indicated by a white band on a


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PDF M3D050 BB417 DO-34) MAM159 C15 DO-34 MAM159 BB417 DO-34 PACKAGE
BB417

Abstract: C15 DO-34
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BB417 UHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode BB417 FEATURES · Excellent linearity k handbook, halfpage a · Hermetically sealed leaded glass SOD68 (DO-34) package MAM159 · C15: 3 pF; ratio: 3.5. Cathode side indicated by a


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PDF M3D050 BB417 DO-34) MAM159 BB417 C15 DO-34
1996 - BA481

Abstract: mixer diode noise diode UHF mixer
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D050 BA481 UHF mixer diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification UHF mixer diode BA481 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) glass package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. · Hermetically-sealed leaded glass package ·


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PDF M3D050 BA481 DO-34) MAM193 BA481 mixer diode noise diode UHF mixer
1999 - BAT85

Abstract: BAT85 equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAT85 Schottky barrier diode Product specification Supersedes data of February 1992 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diode BAT85 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting


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PDF M3D050 BAT85 DO-34) MAM193 BAT85 BAT85 equivalent
1996 - BZV11

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BZV10 to BZV14 Voltage reference diodes Product specification Supersedes data of March 1991 File under Discrete Semiconductors, SC01 1996 Mar 21 Philips Semiconductors Product specification Voltage reference diodes FEATURES · Temperature compensated · Reference voltage range: 5.9 to 6.5 V (typ. 6.2 V) · Low temperature coefficient range: max. 0.0005 to 0.01 %/K. k handbook, halfpage BZV10 to BZV14 DESCRIPTION Voltage


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PDF M3D050 BZV10 BZV14 BZV14 DO-34) MAM216 BZV11
1999 - BZV14

Abstract: BZV13 BZV12 BZV10 BZV11
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D050 BZV10 to BZV14 Voltage reference diodes Product specification Supersedes data of March 1991 1996 Mar 21 Philips Semiconductors Product specification Voltage reference diodes BZV10 to BZV14 FEATURES DESCRIPTION · Temperature compensated Voltage reference diode in a hermetically-sealed SOD68 (DO-34) glass package. · Reference voltage range: 5.9 to 6.5 V (typ. 6.2 V) · Low temperature coefficient range: max. 0.0005 to 0.01 %/K


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PDF M3D050 BZV10 BZV14 DO-34) MAM216 BZV14 BZV13 BZV12 BZV11
BAT85

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAT85 Schottky barrier diode Product specification Supersedes data of February 1992 File under Discrete Semiconductors, SC01 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diode BAT85 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO


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PDF M3D050 BAT85 DO-34) BAT85
BA423A

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BA423A AM band-switching diode Product specification Supersedes data of March 1982 File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification AM band-switching diode BA423A FEATURES DESCRIPTION · Continuous reverse voltage: max. 20 V Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. · Continuous forward current: max. 50 mA · Low diode


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PDF M3D050 BA423A DO-34) MAM156 BA423A
BB405

Abstract: BB405B
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BB405B UHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode BB405B FEATURES · Excellent linearity · Matched to 3% k handbook, halfpage · Hermetically sealed leaded glass SOD68 (DO-34) package a · C28: 2 pF; ratio: 8.3 MAM159 · Low


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PDF M3D050 BB405B DO-34) MAM159 BB405 BB405B
1999 - in4531

Abstract: 1N4532 1N4531 IN4532
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 MAM156 in4531 1N4531 IN4532
1999 - BA482

Abstract: BA483 BA484
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification Supersedes data of January 1982 1996 Apr 17 Philips Semiconductors Product specification Band-switching diodes BA482; BA483; BA484 FEATURES DESCRIPTION · Continuous reverse voltage: max. 35 V Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. · Continuous forward current: max. 100 mA · Low diode


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PDF M3D050 BA482; BA483; BA484 DO-34) MAM156 BA482 BA483 BA484
1996 - BB405B

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D050 BB405B UHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification UHF variable capacitance diode BB405B FEATURES · Excellent linearity · Matched to 3% k handbook, halfpage · Hermetically sealed leaded glass SOD68 (DO-34) package a · C28: 2 pF; ratio: 8.3 MAM159 · Low series resistance


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PDF M3D050 BB405B DO-34) MAM159 BB405B
BA482

Abstract: BA483 BA484 Philips DATA Handbook system MAM156
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification Supersedes data of January 1982 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Product specification Band-switching diodes BA482; BA483; BA484 FEATURES DESCRIPTION · Continuous reverse voltage: max. 35 V Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. ·


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PDF M3D050 BA482; BA483; BA484 DO-34) MAM156 BA482 BA483 BA484 Philips DATA Handbook system MAM156
1996 - BA482

Abstract: BA483 BA484
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BA482; BA483; BA484 Band-switching diodes Product specification Supersedes data of January 1982 File under Discrete Semiconductors, SC01 1996 Apr 17 Philips Semiconductors Product specification Band-switching diodes BA482; BA483; BA484 FEATURES DESCRIPTION · Continuous reverse voltage: max. 35 V Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. · Continuous


Original
PDF M3D050 BA482; BA483; BA484 DO-34) MAM156 BA482 BA483 BA484
1999 - BAS45A

Abstract: BAS45A diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAS45A Low-leakage diode Product specification Supersedes data of June 1994 1996 Mar 13 Philips Semiconductors Product specification Low-leakage diode BAS45A FEATURES DESCRIPTION · Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package. · Repetitive peak forward current: max. 625 mA · Low reverse current


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PDF M3D050 BAS45A DO-34) MAM156 BAS45A BAS45A diode
BAS45A

Abstract: DO-34 PACKAGE
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BAS45A Low-leakage diode Product specification Supersedes data of June 1994 File under Discrete Semiconductors, SC01 1996 Mar 13 Philips Semiconductors Product specification Low-leakage diode BAS45A FEATURES DESCRIPTION · Continuous reverse voltage: max. 125 V Epitaxial medium-speed switching diode with a low leakage current in a hermetically-sealed glass SOD68 (DO-34) package. · Repetitive peak forward


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PDF M3D050 BAS45A DO-34) MAM156 BAS45A DO-34 PACKAGE
glass diode yellow band

Abstract: "Variable Capacitance Diode" bb809
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 BB809 VHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode BB809 FEATURES · High linearity · Matched to 3% k handbook, halfpage · Hermetically sealed leaded glass SOD68 (DO-34) package a · C28: 4.7 pF; ratio: 9 MAM159 · Low series


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PDF M3D050 BB809 DO-34) MAM159 glass diode yellow band "Variable Capacitance Diode" bb809
in4531

Abstract: 1N4532 IN453 1N4531 IN4532 DO-34
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 03 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 FEATURES DESCRIPTION · Hermetically sealed leaded glass SOD68 (DO-34) package The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically


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PDF M3D050 1N4531; 1N4532 DO-34) 1N4531, 1N4532 in4531 IN453 1N4531 IN4532 DO-34
1999 - BAT81

Abstract: BAT82 BAT83
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BAT81; BAT82; BAT83 Schottky barrier diodes Product specification Supersedes data of July 1991 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diodes BAT81; BAT82; BAT83 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The


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PDF M3D050 BAT81; BAT82; BAT83 DO-34) MAM193 BAT81 BAT82 BAT83
1996 - bb809

Abstract: glass diode yellow band DO-34 PACKAGE yellow band glass diode
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D050 BB809 VHF variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification VHF variable capacitance diode BB809 FEATURES · High linearity · Matched to 3% k handbook, halfpage · Hermetically sealed leaded glass SOD68 (DO-34) package a · C28: 4.7 pF; ratio: 9 MAM159 · Low series resistance. Cathode


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PDF M3D050 BB809 DO-34) MAM159 bb809 glass diode yellow band DO-34 PACKAGE yellow band glass diode
1999 - specification sheet of diode

Abstract: BA423A
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 BA423A AM band-switching diode Product specification Supersedes data of March 1982 1996 Mar 13 Philips Semiconductors Product specification AM band-switching diode BA423A FEATURES DESCRIPTION · Continuous reverse voltage: max. 20 V Planar band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. · Continuous forward current: max. 50 mA · Low diode capacitance: max. 2.5 pF k handbook, halfpage a


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PDF M3D050 BA423A DO-34) MAM156 specification sheet of diode BA423A
BAT86

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D050 BAT86 Schottky barrier diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diode BAT86 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The


Original
PDF M3D050 BAT86 DO-34) BAT86
1999 - BAT86

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D050 BAT86 Schottky barrier diode Product specification Supersedes data of April 1992 1996 Mar 20 Philips Semiconductors Product specification Schottky barrier diode BAT86 FEATURES DESCRIPTION · Low forward voltage Planar Schottky barrier diode with an integrated protection ring against static discharges, encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch


Original
PDF M3D050 BAT86 DO-34) MAM193 BAT86
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