The Datasheet Archive

M302271 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: HARRIS SEMICOND SECTOR TIP31, TIP31A, TIP31B, TIP31C 27E D B M302271 D02D54Q 5 H A S 991 P ow er T ra n s is to rs _ File Number ·-P33-1I Epitaxial-Base, Silicon N-P-N VERSAWA7T Transistors For Power-Amplifier and High-Speed-Switching Applications Features: m m 40 W at 25° C case tem perature 5 A rated c , -_ m M302271 QGEÜSM3 H H A S Power Transistors TIP31, TIP31A, TIP31B, TIP31C T 3 3 - J


OCR Scan
PDF TIP31, TIP31A, TIP31B, TIP31C M302271 D02D54Q -P33-1I TIP32-series RCA-TIP31, TIP31
Not Available

Abstract: No abstract text available
Text: 2174.2 HARRIS SEfllCOND SECTOR bflE ] > ■M302271 GD5Q0Dti IflT H H A S HGTH20N40C1 , . TYPICAL FALL TIME (lc = 20A) 3-31 HARRIS SEMICOND SECTOR bflE » ■M302271 0 0 5 0 2 D c


OCR Scan
PDF HGTH20N40C1, HGTM20N40C1, HGTP15N40C1, O-218AC O-220AB O-204AA M302271 HGTH20N40C1 HGTM20N40C1 HGTP15N40C1
BDX43C

Abstract: No abstract text available
Text: M302271 QDMOb'ifl W «HAS ELECTRICAL CHARACTERISTICS, A t Case Temperature (T c )= 2 5 °C Unless , TRANSISTORS BDX34, BDX34A, BDX34B, BDX34C, BDX34D HARRIS SEMICOND SECTOR SbE ] > M302271 0MG7Q2 14T H H A


OCR Scan
PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D 10-Ampere BDX34A) BDX43C
Not Available

Abstract: No abstract text available
Text: « > HARRIS SEflICOND SECTOR _ 37 E D B M302271 , 9 3 3210 E- 13 HARRIS SEMICOND SECTOR Random-Access Memories (RAMs). 37E D M302271 , SEflICOND SECTOR 37E D M302271 DD23700 S E3HAS . Random-Access Memories (RAMs) rv s MWS5101A


OCR Scan
PDF MWS5101A 92CS-29976R! 256-Word 92CS-30805RI M302271 DD23700 5I01A MWS5101A.
thyristors itt

Abstract: programmable schmitt trigger CA3098 CA309 GG32N circuit diagram of LA 55-P up/IRC 8961
Text: HARRI S SEMICOND SECTOR 4ÜE D H M302271 GG32nD R E3HAS T-7 © H A R R I S 0 Ü 3 53 August 1 9 9 1 Programmabl e Schmi tt Tr igger - Wi th Memory Du a l- In pu t Precision Level Detectors D escription The CA3098 Programmable Schmitt Trigger is a monolithic silicon , M302271 0032112 2 QHAS C A 3098 T-73-53 Maximum Ratings, Absolute-Maximum Values at TA = 25 , tem perature. 4 -1 1 COMPARATORS HARRI S SEMICOND SECTOR MDE T> I M302271


OCR Scan
PDF M302271 GG32nD CA3098 150mA CA3098H. thyristors itt programmable schmitt trigger CA309 GG32N circuit diagram of LA 55-P up/IRC 8961
Not Available

Abstract: No abstract text available
Text: Diagram blE T > m HA-5177 M302271 004fc>73b T7b H H A S o W C IL 5 *3 IE IL is Die , 2-571 OPERATIONAL AMPLIFIERS HARRIS SEflICON» SECTOR LIE D M302271 QG4b7Ml 333 B H A S


OCR Scan
PDF 004b733 arch1893 150dB 140dB HA-5177
Not Available

Abstract: No abstract text available
Text: File Number 1061 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E HARRIS SEMICONi SECTOR SbE D ■M302271 OGMOS'îS ETT ■HAS 7 =3 3 - 2 3 Silicon P-N-P Epitaxial-Base High-Power Transistors Rugged Devices, Broadly Applicable For Industrial and Commerical Use T E R M IN A L D E S IG N A TIO N S Features: ■■■• ■High-dissipation capability Low saturation , 200 W W /° C °C HARRIS SEMICOND SECTOR SbE D ■M302271 □OMOS'lb 13S « H A S 2N6609


OCR Scan
PDF 2N6609, MJ15004, RCA9116C, RCA9116D, RCA9116E M302271
RFP9240

Abstract: IRFP P CHANNEL MOSFET* 100v IRFP9240R IRFP9241R IRFP9242R IRFP924
Text: HARRIS SEMICOND SECTOR itri K3J MGE D HAS ■M302271 0D3556S 3 IRFP9240R/P9241R IRFP9242R/P9243R August 1991 Avalanche Energy Rated P-Channel Power MOSFETs Features • -10A and -12A, -200V and -150V • CdS(ON) = 0.50H and 0.7fl • Single Pulse Avalanche Energy Rated • SOA Is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input , Electronic-Library Service CopyRight 2003 HARRIS SEÎ1ICOND SECTOR MOE D WÊ M302271 0G3SSÔÔ 1 IRFP9240R


OCR Scan
PDF M302271 0D3556S IRFP9240R/P9241R IRFP9242R/P9243R -200V -150V IRFP9240R, IRFP9241R, IRFP9242R IRFP9243R RFP9240 IRFP P CHANNEL MOSFET* 100v IRFP9240R IRFP9241R IRFP924
H11M2

Abstract: No abstract text available
Text: characteristics (25°C ) ■M302271 0027513 7 - (unless otherwise indicated) EMITTER 3 , _ Optoelectronic Specifications_ D M302271 D H11M1, H11M2 0D27214


OCR Scan
PDF H11M1, H11M2 H11M2
CA5470H

Abstract: No abstract text available
Text: File Number 1946.1 3-242 HARRIS SEIUCON» SECTOR M OE D M302271 D 3 1 , 80 5.5 ua 90 " mA mA dB 3-244 HARRIS SEMICOND SECTOR MOE D CA5470 M302271


OCR Scan
PDF CA5470 CA5470. CA5470H. CA5470H
Not Available

Abstract: No abstract text available
Text: 37E D ■— - M302271 0 0 2 5 ^ 6 0 3 ■HAS High-Reliability High-Speed CMOS Logic ICs HA RR IS S E M I C O N D S E CT OR CD54HC533/3A CD54HCT533/3A Switching Speed (Lim its w ith black dots (•) are tested 100%.) SW ITCHING CHARACTERISTICS (CL = 50 pF, Input t „ t, = 6 ns) CHARACTERISTIC SYMBOL tp L H tp H L LE to Qn Vcc V 2 4.5 6 2 , 37E D M HARRIS M302271 0 0 2 5 ^ 6 2 7■HAS_High_ Re,iabinty High_ Speed CM0S Logic (Cs


OCR Scan
PDF M302271 CD54HC533/3A CD54HCT533/3A CD54HCT540/3A CD54HC540 CD54HCT540 360//A
GE1001

Abstract: GE1002 GE1003 GE1004 GEI004 1001 harris
Text: 2161.1 HARRIS SEIUCOND SECTOR L6E ]> H M302271 Q050337 733 Specifications GE1001, GE1002, GE1003, GE1004


OCR Scan
PDF M3DS271 GDS033b GE1001, GE1002 GE1003, GEI004 GE1002, GEI004 GE1001 GE1003 GE1004 1001 harris
RUR820

Abstract: RUR815 MUR820 MUR810 MUR815 RUR810 M302271 RUR-820
Text: SbE D ■M302271 0042373 bSD HHAS iviunoiu, mums 15, MUR820 RUR810, RUR815, RUR820 Electrical


OCR Scan
PDF MUR810 q042372 MUR815 RUR815 100kHz MUR810, MUR815, MUR820 RUR810, RUR815, RUR820 RUR815 RUR810 M302271 RUR-820
Not Available

Abstract: No abstract text available
Text: /0.010 M302271 DDtifl52D 70S


OCR Scan
PDF HI3026, CXA3026Q CXA3026Q M302271 DDtifl52D
st 74hct132

Abstract: No abstract text available
Text: ±20mA ±20mA ±25mA 27E D B M302271 0017573 S B H A S D C Vcc O R G R O U N D C U R R E N T , 0.6 1.9 4.4 5.9 M302271 P oints VH 4.5 6 ] > H igh-Level O utp ut V oltage Vo h


OCR Scan
PDF CD54/74HC132 CD54/74HCT132 G017572 RCA-CD54/74HC132 CD54/74HCT132 CD54HC132 CD54HCT132 14-lead CD74HC132 CD74HCT132 st 74hct132
Not Available

Abstract: No abstract text available
Text: recognized as a logic ‘O’ . 7-271 HARRIS SEMICOND SECTOR SÖE D ■M302271 GD44Dfl2 7TS H , – M302271 OQMMDñM 57fl B H A S specifications HCTS109MS TAB LES. APPLICABLE SUBGROUPS CONFORMANCE


OCR Scan
PDF HCTS109MS MIL-STD-1835 CDIP2-T16, 00440flb 05A/cm2 100nm
D41E7

Abstract: D41E1
Text: Serles SbE T > M302271 0040780 b3T * H A S O l FIG. 3 MAXIMUM PERMISSIBLE DC POWER


OCR Scan
PDF 43G2271 O-202AB 300ms M302271 D41E7 D41E1
Not Available

Abstract: No abstract text available
Text: SECTOR 27E D W M M302271 0G17527 CD54/74HC85 CD54/74HCT85 MAXIMUM R A TIN G S, Absolute-Maximum , M302271 0017531 t |= 6 n s D I HAS y -1 \-10% r f


OCR Scan
PDF CD54/74HC85 CD54/74HCT85 001752b RCA-CD54/74HC/HCT85 54/74HC 54/74HCT 12-bit
BDXS3

Abstract: BDXS Hammer D02017
Text: Power Transistors. T -3 3 -2 ? File Number BDX53, BDX53A, BDX53B, BDX53C 1213 HARRIS SEMICOND SECTOR 27E D M302271 G02017D H « H A S 8-Ampere N-P-N Darlington Power Transistors 45-60-80-100 Volts, 60 W atts Gain of 750 at 3 A Features: Operates from IC without predrlver Low leakage at high temperature TERMINAL DESIGNATIONS O t Applications: Power switching : I Hammer drivers Series and shunt regulators JEDEC TO-220AB 92CS-39969 The BDX53, BDX53A, BDX53B, and BDX53C


OCR Scan
PDF BDX53, BDX53A, BDX53B, BDX53C M302271 G02017D O-220AB 92CS-39969 BDXS3 BDXS Hammer D02017
RURD1620

Abstract: RURD1610 RURD1615 LF 1/RURD1610
Text: HARRIS SEMICOND SECTOR 5bE D August 1991 M302271 0042410 3Sfl «HAS Features • Ultrafast Recovery Time (trr < 35ns) • Low Forward Voltage • Low Thermal Resistance • Planar Design • Wire-Bonded Construction Applications • General Purpose • Power Switching Circuits to 100kHz • Full-Wave Rectification Description The RURD1610, RURD1615, RURD1620 are low forward voltage drop ultrafast rectifiers (trr < 35ns). They use an ion-Implanted planar epitaxial construction. These devices


OCR Scan
PDF M302271 100kHz RURD1610, RURD1615, RURD1620 RURD1610 RURD1615 LF 1/RURD1610
RUR1560

Abstract: MURI560 RUR15100 RUR1550 Diode MUR1560 RUR1540 MUR1550 Silicon Diode Switching Diode 700v 600V 25A Ultrafast Diode MUR1540
Text: SEMICOND SECTOR ■M302271 0DM2Bflb 2Del SbE D ■August 1991 Features • Ultrafast with Soft


OCR Scan
PDF H3GS271 DGME353 MURI540 RUR1540 RUR1550 MURI560 RUR1560 MUR1540, MUR1550, MUR1560 RUR1560 RUR15100 Diode MUR1560 MUR1550 Silicon Diode Switching Diode 700v 600V 25A Ultrafast Diode MUR1540
Not Available

Abstract: No abstract text available
Text: 5 ,6 -A vol +125°C, -55°C ' -12.0 V -11.5 V Spec Number 3-170 M302271 , ±2.5V, CL = 50pF 1 Spec Number 3-171 OB M302271 □ □ 5 e J7«îb 010 ■5 1 1 0 6 2 -8 8 3


OCR Scan
PDF HA-5222/883 100MHz 30MHz 40MHz 106dB 128dB
PL-2030

Abstract: 4006B
Text: HARRIS SEMICOND SECTOR M.4E D m M302271 0037321 b BBHAS HARRIS CMOS 18-Stage Static Shift Register High*Voltage Types (2 0 -V o lt Rating) CD4006B types are composed o f 4 separate s h ift register sections: tw o sec tions o f fo u r stages and tw o sections o f five stages w ith an o u tp u t tap at the fo u rth stage. Each section single-rail data path. has ari independent , -1 2 f HARRIS SEMICOND SECTOR MME D H M302271 0037332 b «HAS CD 40


OCR Scan
PDF M302271 18-Stage CD4006B 4006B 92CS-2MOIRI 677-I 2-97I D4006BH. PL-2030
Not Available

Abstract: No abstract text available
Text: – M302271 004G75D TT5 « H A S ELECTRICAL CHARACTERISTICS, At Case Temperature (Tc) = 25°C unless


OCR Scan
PDF BUX39 M3a22
cd40988

Abstract: CD45368 CD4536B 31716 m774 15-V cd4536
Text: . 3-312 HARRIS SEtllCOND SECTOR M4E D 1 CD4536B Types M302271 QQ37b35 7 SHAS Fig.6 - Logic diagram for , HARRIS SEMICOND SECTOR MME D M302271 0P37L37 b SHAS CD4536B Types APPLICATIONS Mìo CODE OUT (cu


OCR Scan
PDF 0037L CD45363 20-Volt CD4536B C040988 CD40988- J270J CD4536B CD4098B cd40988 CD45368 31716 m774 15-V cd4536
Supplyframe Tracking Pixel