The Datasheet Archive

Search Stock (12)

  You can filter table by choosing multiple options from dropdownShowing 12 results of 12
Part Manufacturer Supplier Stock Best Price Price Each Buy Part
AM27512-25DC AMD Bristol Electronics 18 $6.72 $3.36
AM27512-25DC/T AMD New Advantage Corporation - -
AM27512DC AMD Bristol Electronics - -
AM27512DC AMD New Advantage Corporation - -
M27512-2F1 STMicroelectronics Bristol Electronics - -
M275123F1 STMicroelectronics Chip One Exchange - -
M275123FI Chip One Exchange - -
M275125 Littelfuse Inc ComS.I.T. - -
M27512F1 STMicroelectronics New Advantage Corporation - -
M27512F1 STMicroelectronics Bristol Electronics - -
M27512FI Chip One Exchange - -
M27512FI STMicroelectronics Chip One Exchange - -

No Results Found

M27512 datasheet (31)

Part Manufacturer Description Type PDF
M27512 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original PDF
M27512 STMicroelectronics NND - NMOS 512 KBIT (64KB X8) UV EPROM Original PDF
M27512-20F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original PDF
M27512-20F1 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original PDF
M27512-20F6 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original PDF
M27512-20F6 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original PDF
M27512-25F1 SGS-Thomson 512K UV Erasable EPROM Original PDF
M27512-25F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original PDF
M27512-25F1 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original PDF
M27512-25F6 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original PDF
M27512-25F6 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original PDF
M27512-2F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original PDF
M27512-2F1 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original PDF
M27512-2F6 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original PDF
M27512-2F6 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original PDF
M27512-30F1 SGS-Thomson 512K UV Erasable EPROM Original PDF
M27512-30F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Scan PDF
M27512-3F1 SGS-Thomson 512K UV Erasable EPROM Original PDF
M27512-3F1 STMicroelectronics NMOS 512K (64K x 8) UV EPROM Original PDF
M27512-3F1 STMicroelectronics NMOS 512 kBit (64 kBit x 8) UV EPROM Original PDF

M27512 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
M27512 eprom

Abstract:
Text: ) of the parallel M27512 may be common. A TTL low level pulse applied to a M27512'sE input, with GVP P at_12.5V, will program that M27512. A high level E input inhibits the other M27512s from being pro , M27512. To activate this mode, the pro gramming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling address , 5 7 . SGS-THOMSON LI M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TI M E : 200ns


OCR Scan
PDF M27512 200ns M27512 M27512 eprom
M27512

Abstract:
Text: ‹ ÏÏIB S E lâ S S 86 ■7^5^537 005737*4 M27512-2F1 M27512F1 M27512-3F1 M 27512-25F1 M27512-30F1 /M 2 7 5 1 2 F 6 T ^ 1? ^ M27512 S G S -TH 0MS 0N ORDERING INFORMATION P a , a M27512's CE input, with OE/VP P at_12.5V, will program that M27512. A high level CE input , ERASABLE PROM P R E LIM IN A R Y DATA ■FAST ACCESS TIME: 200ns MAX M27512-2F1 ■0 TO +70°C , M27512. When delivered, and after each erasure, all bits of the M27512 are in the "1 ” state. Data is


OCR Scan
PDF M27512 200ns M27512-2F1 M27512 288-bit 200ns, 28-PIN P058-I/2
27512-3

Abstract:
Text: M27512 ORDERING INFORMATION Part Number M27512-2F1 M27512F1 M27512-3F1 M27512-20F1 M27512-25F1 M27512-30F1 M27512-2F6 M27512F6 Access Time 200 ns 250 ns 300 ns 200 ns 250 ns 300 ns 200 ns 250 ns Supply Voltage 5V , to a M27512's CE input, with OE/Vpp at 12.5V, will program that M27512. A high level CE input , : exceeding 14V on pin 22 (OE/Vpp) will permanently damage the M27512. When delivered, and after each erasure , functional in the 25 °C ± 5 °C ambient temperature range that is required when programming the M27512. To


OCR Scan
PDF M27512 M27512 288-bit M27512-2F1 M27512F1 M27512-3F1 M27512-20F1 M27512-25F1 M27512-30F1 27512-3 EPROM 27512
2000 - M27512

Abstract:
Text: M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E input inhibits the other , ambient temperature range that is required when programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may , M27512 NMOS 512 Kbit (64Kb x 8) UV EPROM NOT FOR NEW DESIGN s FAST ACCESS TIME: 200ns s , SIGNATURE s PROGRAMMING VOLTAGE: 12V 28 1 DESCRIPTION The M27512 is a 524,288 bit UV


Original
PDF M27512 200ns M27512 1N914 VA10
Not Available

Abstract:
Text: (Over Specified Operating Conditions) Parameter M27512-20 Min Max M27512-25 M27512-35 , Standard Pinout. JEDEC Approved Software Carrier Capability Fast Access Time — M27512-20 200 ns — M27512-25 250 ns — M27512-35 350 ns Low Power — 150 mA max. Active — 40 mA max , : Exceeding 14.0V on pin 22 (OE/Vpp) will permanently damage the M27512. Programming of multiple M27512s , combination of the M27512†™s high density, cost effective EPRO M storage, and new advanced microprocesÂ


OCR Scan
PDF M27512 M27512-20 M27512-25 M27512-35 M27512
M27512F1

Abstract:
Text: NUMBERS: M27512F1 M27512-3F1 M27512-25F1 M27512-30F1 PIN CONNECTIONS A15 V I 28 ] vcc A12 2 27 ] A 14 , common. A TTL low level pulse applied to a M27512's CE input, with OE/VPP at 12.5V, will program that M27512. A high level CE input inhibits the other M27512s from being programmed. PROGRAM VERIFY A verify , damage the M27512. When delivered, and after each erasure, all bits of the M27512 are in the "1" state , when programming the M27512. To activate thi mode, the programming equipment must fore 11.5V to 12.5V


OCR Scan
PDF M27512 250ns M27512F1 M27512 288-bit 250ns, M27512F1 1200C 30F1 AM27512 M27512-25F1 M27512-30F1 M27512-3F1
1995 - M27512

Abstract:
Text: pulse applied to a M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E , functional in the 25 °C ± 5 °C ambient temperature range that is required when programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. , M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE , DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is


Original
PDF M27512 200ns FDIP28W M27512 1N914
Not Available

Abstract:
Text: pulse applied to a M27512†™s E input, with GVpp at 12.5V, will program that M27512. A high level E , ambient temperature range that is required when program­ ming the M27512. To activate this mode, the pro­ gramming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier , rZ 7 SGS’THOMSON * 7 i, M27512 RfflD®[i]®ilLi©TO®iD(gS NMOS 512K (64K x 8) UV EPROM , – ELECTRONIC SIGNATURE ■PROGRAMMING VOLTAGE: 12V DESCRIPTION Figure 1. Logic Diagram The M27512 is


OCR Scan
PDF M27512 200ns M27512 FDIP28W 7T2T237 Q0bfl47fl
Not Available

Abstract:
Text: may be common. A TTL low level pulse applied to a M27512's E input, with GVP P at_12.5V, will program that M27512. A high level E input inhibits the other M27512s from being pro grammed. Program Verify A , program ming the M27512. To activate this mode, the pro gramming equipment must force 11,5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by , ^ 7 S G S -T H O M S O N IM Ê IM S iÊ ïM iQ g S M27512 NMOS 512K (64K x 8) UV EPROM


OCR Scan
PDF M27512 200ns M27512 FDIP28W
1N914

Abstract:
Text: [ZJ SCS-THOMSON M27512 NMOS 512K (64K x 8) UV EPROM ■FAST ACCESS TIME: 200ns ■EXTENDED , : 12V FDIP28W (F) DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic , 16 A0-A15 M27512 Vss va00765 237 M27512 Note: Except for the rating , operations of the M27512 are listed in the Operating Modes table. A single 5V power supply is required in


OCR Scan
PDF M27512 200ns FDIP28W M27512 tA10HEH- 1N914 AS10 VA10
1997 - M27512

Abstract:
Text: M27512 NMOS 512K (64K x 8) UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED , (F) DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic , programming procedure. Logic Diagram VCC 16 8 A0-A15 E Q0-Q7 M27512 GVPP VSS AI00765B B27512/503 Complete data available on DATA-on-DISC CD-ROM or at www.st.com 1/2 M27512


Original
PDF M27512 200ns FDIP28W M27512 AI00766 200ns, 250ns, 300ns,
1996 - FDIP28Wf

Abstract:
Text: M27512 NMOS 512K (64K x 8) UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE , The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line , Diagram VCC 16 A0-A15 8 Q0-Q7 E GVPP M27512 VSS AI00765B B27512/503 Complete data available on DATA-on-DISC CD-ROM or at www.st.com 1/2 M27512 DIP Pin Connections Signal Names


Original
PDF M27512 200ns FDIP28W M27512 A0-A15 AI00766 200ns, FDIP28Wf
Not Available

Abstract:
Text: be comm on. A TTL low level pulse applied to a M27512's E input, with GVP at_12.5V, P will program that M27512. A high level E input in h ib its th e o th e r M 27 5 1 2 s from be in g p ro ­ grammed , range that is required when program ­ ming the M27512. To activate this mode, the pro­ gram m ing , r Z J SCS-THOMSON ^ 7 #® HD©œi[L[l©ï®(ô)Kf)Q©S M27512 NMOS 512K (64K x 8) UV EPROM , M27512 Table 2. Absolute Maxim um Ratings Sym bol Param eter Value Unit Am bient


OCR Scan
PDF M27512 200ns IP28W
2000 - M27512

Abstract:
Text: common. A TTL low level pulse appliedto a M27512'sE input, with GVpp at 12.5V, will program that M27512. , the M27512. To activate this mode, the programming equipmentmust force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling , M27512 NMOS 512 Kbit (64Kb x 8) UV EPROM NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns EXTENDED , DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is


Original
PDF M27512 200ns M27512 FDIP28W 1N914 VA10
27512

Abstract:
Text: , will program that M27512. A high level E input in h ib its th e o th e r M 2 7 5 1 2 s from be in g p , in the 25 °C ± 5 °C ambient temperature range that is required when program ming the M27512. To , * 7# ® H D© ^ © iLi(gî® © M O(êi f Z 7 S G S -T H O M S O N M27512 NMOS 512K (64K x , G V p p - < VS S VA0C765 March 1992 237 M27512 Table 2. Absolute Maximum Ratings , w 2 8 ] VCC 27 ] A14 26 25 ] A13 ] A8 2 4 ] A9 2 3 ] A11 M27512 22 21 20 19 18 17 16 15 V A


OCR Scan
PDF M27512 200ns M27512 FDIP28W 27512 eprom 27512 ram 512k x 16 bits
2000 - M27512

Abstract:
Text: common. A TTL low level pulse applied to a M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E input inhibits the other M27512s from being programmed. Program Verify A verify , programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling , M27512 NMOS 512 Kbit (64Kb x 8) UV EPROM NOT FOR NEW DESIGN s FAST ACCESS TIME: 200ns s


Original
PDF M27512 200ns M27512 1N914 M27512 eprom VA10
M27512

Abstract:
Text: M27512 may be common. A TTL low level pulse applied to a M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E input inhibits the other M27512s from being programmed. Program , programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling , M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE


Original
PDF M27512 200ns FDIP28W M27512 1N914
1995 - M27512

Abstract:
Text: M27512 may be common. A TTL low level pulse applied to a M27512's E input, with GVpp at 12.5V, will program that M27512. A high level E input inhibits the other M27512s from being programmed. Program , programming the M27512. To activate this mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the M27512. Two identifier bytes may then be sequenced from the device outputs by toggling , M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE


Original
PDF M27512 200ns FDIP28W M27512 1N914
Not Available

Abstract:
Text: 8 5 'C DIP28 M27512-2F1 M27512F1 M27512-3F1 Supply Voltage 200 ns PACKAG E M , 12.5V, will program that M27512. A high level CE input inhibits the other M27512s from being , anently dam age the M27512. W hen delivered, and after each erasure, all bits of the M27512 are in the , in the 25 ‘ C ± 5 "C am bient tem perature range that is required when programm ing the M27512. , schem e is also innovative in SGSTHO M SON M27512. Conventional sensing com ­ pares the addressed cell


OCR Scan
PDF M27512 288-bit DIP28 27512-20F1 27512-25F1 27512-30F1
1998 - FDIP28W

Abstract:
Text: M27512 512 Kbit (64Kb x 8) NMOS UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED , (F) DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic , GVPP M27512 Data Outputs E Q0-Q7 Ground VSS AI00765B B27512/804 Complete data available on DATA-on-DISC CD-ROM or at www.st.com 1/2 M27512 DIP Pin Connections Ordering


Original
PDF M27512 200ns FDIP28W M27512 M27512A 200ns, 250ns, FDIP28W M27512A
PIC7040

Abstract:
Text: M5L2764K M5L27128 M5M27C128K M27256 M27C256 M27512 6 . ER1400 27C64 27C128 27C128 27C256 â , – CROSS-REFERENCE SGS/THOMPSON MICROELECTRONIC M8438 M2764 M2764A M27128A M27256 M27512 M9306 M9346 â


OCR Scan
PDF 000MM53 AM2764 AM27128 AM27256 AM27512 AM27C49-45PC AM27C49-45PCB AM27C49-45DC AM27C49-45DCB AM27C49-45LC PIC7040 X2816 COM8146 PIC7041 HLCD0438A x2864 AT27HC642 TMS7041 AY3-1015D 82HS641
EPROM

Abstract:
Text: GENERAL INDEX EPROM DEVICES NMOSEPROM M/ET2716 (2K x 8) M2732A (4K x 8) M2764A (8K x 8) M27128A (16K x 8) M27256 (32K x 8) M27512 (64K x 8) TS27C64A M27HC641 M27C256B M87C257 M27C512 M27C513 M27C516 M87C512 M27C1000 M27C1001 M27C1011 M27C1024 M27C2001 M27C4001 M27C4002 CMOS EPROM UV EPROM . UV EPROM . UV EPROM AND OTP ROM . UV EPROM AND OTP ROM


OCR Scan
PDF M/ET2716 M2732A M2764A M27128A M27256 M27512 TS27C64A M27HC641 M27C256B M87C257 EPROM M87C512 ET2716 m27c256 UV EPROM
TMS27256

Abstract:
Text: M27C256B ST27256P ST27C256FN ST27C256P TC27C256Q M27512 M27512FI M27C512 M27C1000 M27C1001 ST27C1001


Original
PDF 2716BDC Am27C64 Am2864AE Am2864BE Am27C128 Am27C256 Am27H256 Am27C512 Am27C512L Am27C010 TMS27256 M27512FI TC571000D-15 et2732 TC571001D-15 4827128 28C256 27c1001a Toshiba TC571000D-20 27c32
1997 - smd transistor x8

Abstract:
Text: M87C257 M27C512 M27512 M27C1024 M27C1001 M27C2001 M27C4001 M27C4002 Function 16K NMOS UV EPROM 32K NMOS UV


Original
PDF ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 PBL3717A L6201/2/3 L6204 smd transistor x8 smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 BYT12PI100 5kw dc-dc MK48S74X-25 SGSF463
atmel 93c66

Abstract:
Text: NM27LC512 NM27LV512 NM27LV010 : SGSThomson : EPROM M2716 M2732A M2764A M27128A M27256 M27512 M27C64A


Original
PDF ST011 DIP42 DIP42, RS232 155RE3 556RT4 556RT4A 556RT5 atmel 93c66 PH29EE010 2764 EEPROM 537RU10 sst ph29ee010 556RT7A intel 8755 eprom 2716 537RU17
Supplyframe Tracking Pixel