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LPC4330FET256/3DE NXP Semiconductors Future Electronics - $5.00 $5.00

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LPC4330FET256/3DE Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: No file text available


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PDF LPC4350 LPC4300 LPC4300 LPC1850 LPC1850.
2010 - Not Available

Abstract: No abstract text available
Text: 3 *; < = 4 <% % #()@AB *? * 3DE .F + ! G8 * #()@AB 4 < > * C 5 #()@AB * 3DE .F + ! , K7 " J L ; !" M =M ! N = " < 9 % 3DE + !G8 N = &8 & 7 , ( + !G8O 3DE + P!G8 9 ,( -./ ,( Q+ 4 #()* 3( + G8O 3DE + P!G8 3( + !G8O 3DE + , O X8 SY-B O Z # 8Y[@ PO > 6HO 3DE + !G8O #() + ! #O #S) + # 8][@ O ! > #O #S) + #O #S) + #O 3DE + !G8 4 #O 3DE + !G8 5 # 3DE + !G8 3DE +


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2002 - cpr.m02.vp

Abstract: PJMCPRM02 ID CPR.M02 feig RS232-TTL Wiegand rfid SAM module mifare Transponder Philips ID 33 ISO14443-B ISO15693 philips
Text: M21001- 3de -ID-B.doc Montage ID CPR.M02 DEUTSCH OBID® classic-pro FEIG ELECTRONIC GmbH Seite 2 von 42 M21001- 3de -ID-B.doc Montage ID CPR.M02 DEUTSCH OBID® classic-pro , von 42 M21001- 3de -ID-B.doc DEUTSCH OBID® classic-pro Montage ID CPR.M02 Hinweis , FEIG ELECTRONIC GmbH Seite 4 von 42 M21001- 3de -ID-B.doc Montage ID CPR.M02 Inhalt 1 , ) .21 5. Technische Daten FEIG ELECTRONIC GmbH 22 Seite 5 von 42 M21001- 3de


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PDF M21001-3de-ID-B D-35781 ISO14443-A ISO14443-B ISO15693 LRI512) cpr.m02.vp PJMCPRM02 ID CPR.M02 feig RS232-TTL Wiegand rfid SAM module mifare Transponder Philips ID 33 ISO15693 philips
Not Available

Abstract: No abstract text available
Text: ,+ ,! -##. /0 3DE / , 3DE / , 3DE / ,F 3DE / , 3DE /, , 3DE / 3DE / 3DE / , 3DE / , 3DE / ,+ 3DE / , 3DE /, , , 3DE / 3DE / 3DE


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AZ852

Abstract: D-82178
Text: VDC 1.13 3 2.10 6.8 64 AZ852N­ 3DE AZ852G­ 3DE AZ852J­ 3DE 4.5 3.15 10.3 , Operate VDC 1.13 3 2.25 8.1 90 AZ852PN­ 3DE AZ852PG­ 3DE AZ852PJ­ 3DE 4.5 3.38


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PDF AZ852 IEC60950/UL60950/EN60950 D-82178 AZ852
AZ833P

Abstract: D-82178 45DE
Text: Ohm ± 10% 64.3 THT Through Hole AZ833P2­ 3DE SMT Long AZ833P2S1­ 3DE SMT Short AZ833P2S2­ 3DE , Through Hole AZ833P1­ 3DE SMT Long AZ833P1S1­ 3DE SMT Short AZ833P1S2­ 3DE 4.5 3.38 13.8


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PDF AZ833P E43203 D-82178 AZ833P1S1 AZ833P2S1 AZ833P1S2 AZ833P2S2 AZ833P1 AZ833P2 AZ833P 45DE
AZ833P

Abstract: No abstract text available
Text: 52.3 4114 THT Through Hole AZ833P2­ 3DE SMT Long AZ833P2S1­ 3DE SMT Short AZ833P2S2­ 3DE , AZ833P1­ 3DE SMT Long AZ833P1S1­ 3DE SMT Short AZ833P1S2­ 3DE 9.8 289 3.38 AZ833P1


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PDF AZ833P E43203; 8/27/01W AZ833P1S1 AZ833P2S1 AZ833P1S2 AZ833P2S2 AZ833P1 AZ833P2 AZ833P
AZ956P

Abstract: No abstract text available
Text: ­1.5DE AZ956P1S­1.5DE 3 13 300 2.25 AZ956P1­ 3DE AZ956P1S­ 3DE 5 20 740 3.75 , 1.13 THT SMT Through Hole AZ956P2­1.5DE AZ956P2S­1.5DE 130 2.25 AZ956P2­ 3DE AZ956P2S­ 3DE


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PDF AZ956P E43203 AZ956P2 AZ956P2S AZ956P
D-82178

Abstract: relay zettler 45DE AZ833P
Text: VDC 6.5 Coil Resistance Ohm ± 10% 64.3 THT Through Hole AZ833P2­ 3DE SMT Long AZ833P2S1­ 3DE SMT Short AZ833P2S2­ 3DE 3.38 9.8 145 AZ833P2­4.5DE AZ833P2S1­4.5DE AZ833P2S2 , Ohm ± 10% 128 THT Through Hole AZ833P1­ 3DE SMT Long AZ833P1S1­ 3DE SMT Short AZ833P1S2­ 3DE


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PDF AZ833P E43203 D-82178 AZ833P1S1 AZ833P2S1 AZ833P1S2 AZ833P2S2 AZ833P1 AZ833P2 relay zettler 45DE AZ833P
Telecom Relays

Abstract: relay zettler Rhodium Relay SPDT relay ZETTLER AZ AZ956P D-82178 AZ956P25
Text: Operate VDC 1.13 THT Through Hole AZ956P1­1.5DE AZ956P1S­1.5DE SMT 300 2.25 AZ956P1­ 3DE AZ956P1S­ 3DE 20 740 3.75 AZ956P1­5DE AZ956P1S­5DE 35 50 2,160 4,500 6.75 9.00 , 130 2.25 AZ956P2­ 3DE AZ956P2S­ 3DE 14.75 390 3.75 AZ956P2­5DE AZ956P2S


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PDF AZ956P E43203 AZ956P2 AZ956P2S D-82178 Telecom Relays relay zettler Rhodium Relay SPDT relay ZETTLER AZ AZ956P AZ956P25
PD1712

Abstract: NEC SIP 8pin JPB568G UPB568HA P8HA-254B
Text: N E C/ CALIFORNIA 3DE D bM27Mm 0002110 a HNECC .7 1 GHz DIVIDE-BY-128/136 LOW POWER , / CALIFORNIA APPLICATION 3DE D ■bMSTMlM 00D21B1 6 «NECC T-45-19-13 Powered by ICrniner.com Electronic-Library Service CopyRight 2003 L N E C/ CALIFORNIA 3DE D bMBTMlM 00QS122 T BINECC T , ICrniner.com Electronic-Library Service CopyRight 2003 L NEC/ CALIFORNIA 3DE D b4S7M14 00Q5123 1 BINECC , 0.12 0.005 Powered by ICminer.com Electronic-Library Service CopyRight 2003 / NEC/ CALIFORNIA 3DE D


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PDF bM27Mm DIVIDE-BY-128/136 UPB568, UPB568HA iPB568C, PB568HA jjPB568G jjPD1700 /JPD1709, PD1711, PD1712 NEC SIP 8pin JPB568G UPB568HA P8HA-254B
l4970

Abstract: L4977 TRANSISTOR UO 112 THOMSON ui35 7e2e 0d22B L4377 40KHZ L4974 18KA
Text: 1 : Feedforward Waveform. ;S G S-THOMSON 3DE T> \ Figure 2 : Soft Start Function. CLftHPED ERROR , flop and the Figure 4 : Reset and Power Fail Functions. A T—58—11—31 _L4977 3DE D power DMOS , Figure 4 : Reset and Power Fall Functions (continued). 3DE D 111) Ui. -À-RISING P. FAIL , _ 3DE D ELECTRICAL CHARACTERISTICS (continued) VREF SECTION (pin 14) Symbol Parameter Test , < 50V 60 80 dB 7C rz7 scs-moMSON 7/19 97 L4977 jm Tqgqsa? ooeabll 3 ■: ir.^ S G S-THOMSON 3DE


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PDF 500KHz L4977 L4970 L4974. 33BpF tj22K LA377 L4974 UO-12U TRANSISTOR UO 112 THOMSON ui35 7e2e 0d22B L4377 40KHZ 18KA
TRANSISTOR 3000W 400V

Abstract: 3000w smps smps 3000W flyback 3000w smps 1500W SGSF661 3000w mosfet circuit
Text: 7^5^537 QOSTSSS 0 ■- I S cïï SGS-THOMSON SGSF661 S G S-THOMSON 3DE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTOR ■HIGH SWITCHING SPEED NPN POWER TRANSISTOR ■HOLLOW EMITTER TECHNOLOGY â , February 1989 _1/4 979 SGSF661 7^5^537 opggggb g ■T- 33-/5" THERMAL DATA S 6 S-THOMSON 3DE P , œ“ 10"' 10° 101 IcIAl 3DE D /ST SCS-THOMSON RtCBSsaieirKsaœa 3/4 980 SGSF661 _W_71BqB37 , > Switching Times Percentance Variation S G S-TH0MS0N 3DE D INDUCTIVE LOAD


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PDF SGSF661 70kHz 71BqB37 TRANSISTOR 3000W 400V 3000w smps smps 3000W flyback 3000w smps 1500W SGSF661 3000w mosfet circuit
ls5080

Abstract: LS5018B LS5060B LS5120B LS5120B1
Text:  3DE D ■TTS1^? 0Q3SDlb h ■"^Fv^TT^— I ■V? C-\ \ SCS-mOMSON LS5018B/LS5060B LS5120B/LS5120B1 S G S-THOMSON BIDIRECTIONAL TRISIL ■CHARACTERISTIC OF STAND-OFF AND BREAKDOWN VOLTAGE SIMILAR TO A TRANSIL (Voff) ■HIGH FLOWOUT CAPABILITY BECAUSE OF ITS BREAKOVER CHARACTERISTICS (Von) â , to Ambient 80 °c/w * ANSI STD C62. April 1989 100 50 Pulse wave form 1/3 113 ; 3de d m trs , SGS-THOMSON saiODWLîœfissïïîOï 3DE D S G S-THOMSON TTETSa? 0D3SQ1Ô T H T-62-11 LS5018B/LS5060B


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PDF LS5018B/LS5060B LS5120B/LS5120B1 LS5018B, LS5060B LS5120B/B1 50/LS512 LS5120-_ LS5018 LS5120 LS5060: ls5080 LS5018B LS5120B LS5120B1
2003 - CY2LL8423

Abstract: CY2LL8423OI CY2LL8423OIT CY2LL8423ZC CY2LL8423ZCT CY2LL8423ZI CY2LL8423ZIT
Text: 2 1 2A 6 7 2B 27 26 23 24 1Y 1Z 2Y 2Z 25 3 2DE 5 S0 S1 3DE 11 , 3B S2 3DE S3 4A 4B 1 2 3 4 5 6 7 8 9 10 11 12 13 14 CY2LL 8423 4 1A 1B , , 3B 10 Differential Input Channel 3 S2 11 Power Supply 3DE Function Select , 3.6 V (S0,S1,1DE,2DE) (S2,S3, 3DE ,4DE) VIL Max. 3.3 Supply Voltage VIH Typ. 3 VDD (S0,S1,1DE,2DE) (S2,S3, 3DE ,4DE) VID Common Mode Input Voltage TA Operating


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PDF CY2LL8423 TIA/EIA-644-1995-compliant 50-ohm 350-mV 28-pin CY2LL8423 CY2LL8423OI CY2LL8423OIT CY2LL8423ZC CY2LL8423ZCT CY2LL8423ZI CY2LL8423ZIT
2002 - CY2LL8422

Abstract: CY2LL8422OI CY2LL8422ZC CY2LL8422ZCT CY2LL8422ZI CY2LL8422ZIT
Text: 1DE S1 2A 2B 3A 3B S2 3DE S3 4A 4B 1Y 1Z 2Y 2Z 25 3 2DE 5 S0S1 3DE 11 , Select Channel 3 & 4 11 3DE 12 S3 Data Enable Channel 3 13, 14 4A, 4B , Temperature 3.6 V (S0,S1,1DE,2DE) (S2,S3, 3DE ,4DE) VID 3.3 (S0,S1,1DE,2DE) (S2,S3, 3DE ,4DE , s0,s1,S2, S3, 1de,2de, 3DE , 4DE VIH = 5V 15 µA IIL Low-Level Input Current s0,s1,S2, S3, 1de,2de, 3DE , 4DE VIL = 0.8V 5 µA IOS Short Circuit Current IOZ High


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PDF CY2LL8422 TIA/EIA-644-1995 100-ohm 28-pin CY2LL8422 CY2LL8422OI CY2LL8422ZC CY2LL8422ZCT CY2LL8422ZI CY2LL8422ZIT
Not Available

Abstract: No abstract text available
Text: 3DE D m 712^537 0 Q 3 i m 2 ■_ H~- 3 5 - 17 SGS-THOMSON 2 N 4013 LitgïïIfM Q Û S s 6 S “ T H0MS0N HIGH-CURRENT SWITCH D E S C R IP T IO N The 2N 4013 is a silicon planar epitaxial transistor in T O -18 metal case. It is a high-current switch used for memory , 3DE » ■G S-THÔMS0N 7^237 _ — 0D31SDD — S - r ~ ' T , SGS-THOMSON 3DE T'ISTSa? D GD31501 7 ■2N 40J3 S G S- THOMS ON I—35—17 Switching


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PDF 80NPN Collector-eml35 GD31501
2002 - Not Available

Abstract: No abstract text available
Text: 2A 27 2 1 6 7 2B 26 23 24 1B 1A S0 1DE S1 2A 2B 3A 3B S2 3DE S3 4A 4B 1Y 1Z 2Y 2Z 25 3 2DE 5 S0 S1 3DE 11 3A 3B 8 9 20 19 4A 13 14 , S2 Power Supply Differential Input Channel 3 Function Select Channel 3 & 4 11 3DE 12 , Min. Supply Voltage VIH High Level Input Voltage (S0,S1,1DE,2DE) (S2,S3, 3DE ,4DE) VIL , , 3DE ,4DE) VID Typ. 3 VDD 2 0.8 0.1 Industrial Commercial 0.6 VID/2 2.4 â


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PDF CY2LL8423 TIA/EIA-644-1995 50-ohm 28-pin CY2LL8423
Not Available

Abstract: No abstract text available
Text: ƒ• ィレット検査を可能にしました。プロファイル データは、ソフトウエアを用いて輝度レベルを 3Dè ¡¨ç¤ºã™ã‚‹ã“とも可能です。 3Dè ¡¨ç¤º はんだ不良 BGAのボイド検査 X線TDIカメラ ã


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PDF SFAS0028J02 SEP/2013
wiring diagram relay

Abstract: Telecom Relays relay zettler AZ833S1-12DE AZ833 AZ833-12DE surge PCB layout ZETTLER
Text: Through Hole AZ833­ 3DE SMT Long AZ833S1­ 3DE SMT Short AZ833S2­ 3DE 9.8 145 3.38


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PDF AZ833 AZ833S1 AZ833S2 wiring diagram relay Telecom Relays relay zettler AZ833S1-12DE AZ833 AZ833-12DE surge PCB layout ZETTLER
sgs110

Abstract: SGS116
Text: ■I 7 ^ 2 3 7 002^2^3 fi H ^ 3 3 ^/ ( SCS-THOMSON TIP/SGS110-111-112 [IQMmiiOïtMQÛS TIP/SGS115-116-117 S G S-TH0MS0N 3DE D POWER DARLINGTONS DESCRIPTIO N The TIP110, TIP111, TIP112 and SGS110, SGS111, SQS112 are silicon epitaxial-base NPN transistors in monolithic Darlington , * 5 7 3DE SGS-THOMSON D 3/5 ESKEBÎ 1019 TIP/SGS110-111-112-113-115-116-117 7 , types). S G S-TH0MS0N 4/5 £ZT 3DE SGS-THOMSON K IE E S H JS S irK S H S S T020 D


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PDF TIP/SGS110-111-112 TIP/SGS115-116-117 TIP110, TIP111, TIP112 SGS110, SGS111, SQS112 O-220 OT-82 sgs110 SGS116
BTB12CW

Abstract: No abstract text available
Text: 3DE D ■7^2^237 DÜ3172Ö 3 wf SGS-THOMSON T-zs-IS kT# _BTB 12 CW G S-THOMSON SNUBBERLESS TRIACS ■Itrms = 12 A at Tc = 95 °C. ■Vdrm : 200 V to 800 V. ■Igt = 35 mA (Ql-ll-lll). ■GLASS PASSIVATED CHIP. ■HIGH SURGE CURRENT : ITSM = 120 A. ■HIGH COMMUTATION CAPABILITY : (di/dt) c > 6.5 A , / |is. (2) tj = 125 °c. February 1989 1/4 447 BTB12CW 3DE D ■" 7121237 0031721 S THERMAL RESISTANCES , cycles. SGS-THOMSON _3/4 KucRoejerasaics - 449 BTB 12 CW 3DE D ITSH (A). I2t (A2s) 100 10 TRESES


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PDF CB-415 CB-415) BTB12CW
LQ-500

Abstract: SO-110
Text:  3DE ]> ■7^5^237 ÜD31böM ■_ -lS - SCS-THOMSON IMÛlî»L[IÛÏÏ[Fâ(g)«S BTB 06 AW S G S-THOMSON SNUBBERLESS TRIACS ■Itrms = 6 A at Te = 100 °C. ■Vdrm : 200 V to 800 V. ■Igt = 75 mA (Ql-ll-lll). ■GLASS PASSIVATED CHIP. ■HIGH SURGE CURRENT : Itsm = 60 A. ■HIGH , Electronic-Library Service CopyRight 2003 3DE T> 7^237 DD31bfib S P (W) -tdi/dt) c imitation BTB 06 AW T , Electronic-Library Service CopyRight 2003 BTB 06 AW 200 100 1TSH (A). I2t (A2s) 3DE D ■S G S-TH0MS0N io t


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PDF 10rvice T-25-15 CB-415) LQ-500 SO-110
ATT25

Abstract: 100C 1N4448 BAV17 BAV21 BAV216
Text: K C INTERNATIONAL 3DE D 1171103 000Ü347 1 BKC International Electronics Inc. BAV17. BAV21 6 Lake Street Lawrence, MA USA 01841 Telephone (508) 681-0392 • TeleFax (508) 681-9135 Silicon Epitaxial Planar Diodes fc* general puipos* These types are also available to specification CECC , B K C INTERNATIONAL 3DE » ■000034Ô B m~T-0!>~Q°\ BKC INTERNATIONAL ELECTRONICS, INC. 6 LAKE , MAX. BODY DIAMETER .075 MAX. } 8004-9192 B K C INTERNATIONAL 3DE D 117^03 00003^ S ■T'^-O0


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PDF BAV17. BAV21 100mA DO-35 ATT25 100C 1N4448 BAV17 BAV21 BAV216
2012 - D5 011

Abstract: No abstract text available
Text: 3DE SE D4 D3 Data Bit D2 D1 IGS BGS TGS LVS RVS IMS SSD D0 Function Audio input gain control Bass , Bit D7:D5 111 111 D4 ME 0 D3 0 Data Bit D2 3DE 0 D1 SE 0 D0 SSD 0 Table 9 Left/Right Channel Gain , Configure the operating mode for IS31AP4833. SSD 0 1 SE 0 1 3DE 0 1 ME 0 1 Shutdown Enable Operating Mode , enhancement effect enabled by setting the 3DE bit of the control byte "111x xxxx". When setting the 3DE bit to "1", 3D enhancement enabled. When setting the 3DE bit to "0", 3D enhancement disabled. Pulling the 3D


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PDF IS31AP4833 IS31AP4833 -12dB -42dB QFN-36 D5 011
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