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Part Manufacturer Description Datasheet Download Buy Part
LTM8029EY#PBF Linear Technology LTM8029 - 36VIN, 600mA Step-Down µModule (Power Module) Converter with 5µA Quiescent Current; Package: BGA; Pins: 35; Temperature Range: -40°C to 85°C
LTM8029IY#PBF Linear Technology LTM8029 - 36VIN, 600mA Step-Down µModule (Power Module) Converter with 5µA Quiescent Current; Package: BGA; Pins: 35; Temperature Range: -40°C to 85°C
LTM8029MPY#PBF Linear Technology LTM8029 - 36VIN, 600mA Step-Down µModule (Power Module) Converter with 5µA Quiescent Current; Package: BGA; Pins: 35; Temperature Range: -55°C to 125°C
1052177-1 TE Connectivity Ltd 2037 8029 92
1052050-1 TE Connectivity Ltd 2036 8029 92
1051787-1 TE Connectivity Ltd 2031 8029 92

LP 8029 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - TSSa

Abstract: No abstract text available
Text: intensity = ± 25° D Peak wavelength lp = 875 nm D High reliability Applications High power infrared , Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Rise Time Fall Time Fall Time 2 , VF TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.5 3.2 ­1.6 , ) 94 8029 e 0 Figure 1 : Power Dissipation vs. Ambient Temperature V Frel ­ Relative Forward , ( l ) rel = Fe ( l ) / Fe ( lp ) 0 ­10 0 10 50 Tamb ­ Ambient Temperature ( °C ) 94 8020


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PDF TEST2500 D-74025 TSSa
1995 - telefunken tsss 2600

Abstract: tp100 sensor TEST2600
Text: ° D Vertical angle of half intensity ± 60° D Peak wavelength lp = 950 nm D High reliability D Good , Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Rise , 2 lp Dl TKlp tr tr tf tf Min Typ 1.25 2.2 ­1.3 Max 1.6 100 1 30 2.6 25 , 25 0 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0


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PDF D-74025 telefunken tsss 2600 tp100 sensor TEST2600
1995 - TSSP 4400

Abstract: CQX 47 CQX 13 tssp
Text: of half intensity = ± 22° D Peak wavelength lp = 950 nm D High reliability Applications High , Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Rise Time Fall Time Fall Time 2 , VF TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 2.4 ­1.3 , 50 25 0 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029


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PDF D-74025 TSSP 4400 CQX 47 CQX 13 tssp
1995 - LP 8029 MA

Abstract: No abstract text available
Text: additional polarity sign D Angle of half intensity = ± 16° D Peak wavelength lp = 950 nm D High , Bandwidth Temp. Coefficient of lp Rise Time Rise Time Fall Time Fall Time 2 Test Conditions IF = , TKVF IR V(BR) Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 ­1.3 , Ambient Temperature ( °C ) 94 8029 e 0 Figure 1 : Power Dissipation vs. Ambient Temperature 40


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PDF D-74025 LP 8029 MA
1995 - TSus 4400

Abstract: Temic tsus
Text: ± 18° D Peak wavelength lp = 950 nm D High reliability D Good spectral matching to Si , . Coefficient of lp Rise Time Rise Time Fall Time Fall Time 2 Test Conditions IF = 100 mA, tp = 20 ms , Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 ­1.3 5 40 30 15 , 8029 e 0 Figure 1 : Power Dissipation vs. Ambient Temperature 40 60 80 100 Figure


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PDF D-74025 TSus 4400 Temic tsus
1997 - BPW16N

Abstract: CQY36N sr101
Text: ° 94 8638 Peak wavelength lp = 950 nm Good spectral matching to Si photodetectors Applications , Typ 1.3 5 50 1.5 5 ­0.8 ±55 950 50 400 450 0.7 TKfe lp Dl x10ms x10ms , ( mW ) 250 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e


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PDF CQY36N CQY36N BPW16N D-74025 15-Jul-96 sr101
Not Available

Abstract: No abstract text available
Text: Typical Characteristics (Tamb = 25°C unless otherwise specified) 94 8029 e Tamb - A m b ien t Tem , ) lp - F orw ard C u rren t ( r a A ) Figure 3. Forward Current vs. Forward Voltage Figure 6 , . Ambient Temperature Figure 7. Rei. Radiant Intensity\Power vs. Ambient Temperature 900 ' lp - F


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PDF CQX48 CQX48 BPW78 D-74025 23-Jun-97
1995 - LP 8029

Abstract: telefunken diodes SI 61 L TSHA4400 TSHA4401 photodetector
Text: intensity = ± 20° D Peak wavelength lp = 875 nm D High reliability D Good spectral matching to Si , . Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise , mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF VF TKVF IR Cj TKfe lp Dl , Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0 Figure 1 : Power Dissipation vs. Ambient , Power 1.25 1.0 0.75 0.5 0.25 IF = 100 mA Fe ( l ) rel = Fe ( l ) / Fe ( lp ) 0 780 94


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PDF D-74025 LP 8029 telefunken diodes SI 61 L TSHA4400 TSHA4401 photodetector
1995 - LP 8029

Abstract: DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N CQY37N cqy 17
Text: = ± 12° 94 8639 D Peak wavelength lp = 950 nm D Good spectral matching to Si photodetectors , =1.5A, tp/T=0.01, tpx10ms IF=1.5A, tp/T=0.01, tpx10ms Symbol VF V(BR) Cj Ie fe TKfe lp Dl tr , 25 0 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0


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PDF CQY37N BPW17N D-74025 LP 8029 DIN 7990 CQY 26 7922 diode cqy 35 n BPW17N cqy 17
TSMF3700

Abstract: No abstract text available
Text: half intensity = ± 60° Peak wavelength lp = 870 nm High reliability Applications Infrared source , Bandwidth Temp. Coefficient of lp Rise Time Fall Time www.vishay.com 2 (6) Test Conditions IF = , IF = 100 mA IF = 100 mA IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie fe TKfe lp , 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0 Figure 1. Power


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PDF TSMF3700 TSMF3700 D-74025 20-May-99
TEST2600

Abstract: TSSS2600
Text: intensity ± 25° 94 8672 Vertical angle of half intensity ± 60° Peak wavelength lp = 950 nm High , Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Symbol VF VF TKVF IR Cj Ie Ie , 400 800 400 1 fe TKfe 1 2 lp Dl TKlp tr tr tf tf Unit V V mV/K mA pF , 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e 20 40 60


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PDF TSSS2600 TSSS2600 D-74025 20-May-99 TEST2600
1995 - TEMT3700

Abstract: TSML3700
Text: = ± 60° D Peak wavelength lp = 950 nm D High reliability D Matching to TEMT3700 phototransistor , . Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise , Symbol VF VF TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 , 8029 e 0 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 7916 e Figure 2


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PDF TSML3700 D-74025 TEMT3700
TEMT3700

Abstract: TSMS3700
Text: Wide angle of half intensity = ± 60° Peak wavelength lp = 950 nm High reliability Matching to , Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test , +1-408-970-5600 2 (6) Symbol VF VF TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf , ) 94 8029 e 101 100 0 V Frel ­ Relative Forward Voltage 75 RthJA 50 25 0 1.1 IF


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PDF TSMS3700 TSMS3700 TEMT3700 D-74025 20-May-99
1995 - TSIP4400

Abstract: TSIP 4400 TSIP4401 TSIP Temic
Text: Angle of half intensity = ± 20° D Peak wavelength lp = 950 nm D High reliability D Good spectral , . Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise , mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF VF TKVF IR Cj TKfe lp Dl , 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 0 Figure 1 : Power


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PDF D-74025 TSIP4400 TSIP 4400 TSIP4401 TSIP Temic
1997 - BPW17N

Abstract: CQY37N BPW17
Text: Peak wavelength lp = 950 nm Good spectral matching to Si photodetectors Applications Radiation , Typ 1.3 5 50 5 5 ­0.8 ±12 950 50 400 450 2.2 TKfe lp Dl x10ms x10ms , ( mW ) 250 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e


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PDF CQY37N CQY37N BPW17N D-74025 15-Jul-96 BPW17
2001 - Not Available

Abstract: No abstract text available
Text: wavelength lp = 870 nm High reliability 94 8553 Applications Infrared source in tactile keyboards IR , Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = , Max 1.7 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns 10 fe TKlp tr tf lp Dl , 101 100 0 94 7952 e 1 2 3 4 94 8029 e Tamb ­ Ambient Temperature ( °C ) VF ­


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PDF TSMF3700 TSMF3700 D-74025 01-Dec-00
2001 - TSUS4300

Abstract: No abstract text available
Text: ° 94 8636 Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors , Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = , 800 400 800 400 7 fe TKfe lp Dl IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 , 200 150 RthJA 100 50 100 75 RthJA 50 25 0 0 0 94 8029 e 20 40 60


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PDF TSUS4300 TSUS4300 D-74025 20-May-99
TEMT3700

Abstract: TSML3700
Text: = ± 60° Peak wavelength lp = 925 nm High reliability Matching to TEMT3700 phototransistor , . Coefficient of lp Rise Time Fall Time www.vishay.com 2 (6) Test Conditions IF = 100 mA, tp = 20 ms , lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 ­1.3 Max 1.7 100 2.5 20 7 60 32 , 101 100 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e


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PDF TSML3700 TSML3700 D-74025 20-May-99 TEMT3700
Vishay Telefunken Phototransistor

Abstract: TEMT3700 TSML3700
Text: = ± 60° Peak wavelength lp = 925 nm High reliability Matching to TEMT3700 phototransistor , . Coefficient of lp Rise Time Fall Time www.vishay.com 2 (6) Test Conditions IF = 100 mA, tp = 20 ms , lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 ­1.3 Max 1.7 100 2.5 20 7 60 32 , 101 100 0 0 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e


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PDF TSML3700 TSML3700 D-74025 01-Dec-00 Vishay Telefunken Phototransistor TEMT3700
2001 - Vishay Telefunken Phototransistor

Abstract: TEMT3700 TSMS3700
Text: operation Wide angle of half intensity = ± 60° Peak wavelength lp = 950 nm High reliability Matching to , Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time www.vishay.com 2 (6 , TKVF IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 1.8 ­1.3 , 50 20 40 60 80 100 Tamb ­ Ambient Temperature ( °C ) 94 8029 e 101 100 0


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PDF TSMS3700 TSMS3700 TEMT3700 D-74025 01-Dec-00 Vishay Telefunken Phototransistor
1997 - TEMT3700

Abstract: TSML3700 diode 7952
Text: wavelength lp = 925 nm High reliability Matching to TEMT3700 phototransistor Applications Infrared , Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time 2 (6 , IR Cj Ie Ie fe TKfe lp Dl TKlp tr tr tf tf Min Typ 1.3 2.2 ­1.3 Max , Temperature ( °C ) 94 8029 e 0 Figure 1. Power Dissipation vs. Ambient Temperature V Frel ­


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PDF TSML3700 TSML3700 D-74025 16-Oct-96 TEMT3700 diode 7952
2001 - TSUS4400

Abstract: RthJA
Text: ° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors , . Coefficient of lp Rise Time Symbol VF VF TKVF IR V(BR) Cj Ie Ie Typ 1.3 2.2 ­1.3 Max 1.7 100 5 40 30 15 140 20 ­0.8 ±18 950 50 0.2 800 400 800 400 7 fe TKfe lp , RthJA 50 25 0 0 0 94 8029 e 20 40 60 80 100 Tamb ­ Ambient Temperature


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PDF TSUS4400 TSUS4400 D-74025 20-May-99 RthJA
1999 - NS1005

Abstract: SR 102
Text: current operation Standard T­1(ø 3 mm) package Angle of half intensity = ± 18° Peak wavelength lp = 950 , Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1.5 A, tp , nm nm/K ns ns ns ns 100 5 7 fe TKlp tr tr tf tf lp Dl Typical Characteristics (Tamb = , ) 125 100 150 RthJA 100 75 RthJA 50 50 0 0 20 40 60 80 100 25 0 0 20 40 60 80 100 94 8029


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PDF TSUS4400 TSUS4400 D-74025 20-May-99 NS1005 SR 102
2001 - Not Available

Abstract: No abstract text available
Text: for pulse current operation Extra wide angle of half intensity = ± 60° Peak wavelength lp = 925 nm , . Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA , tf tf lp Dl www.vishay.com 2 (6) Document Number 81034 Rev. 4, 01-Dec-00 TSML3700 , 0.001 50 0 0 20 40 60 80 100 101 100 0 94 7952 e 1 2 3 4 94 8029 e Tamb ­


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PDF TSML3700 TSML3700 D-74025 01-Dec-00
1995 - CQX 13

Abstract: BPW78
Text: 94 8743 D Angle of half intensity = ± 25° D Peak wavelength lp = 950 nm D High reliability D , ) Cj fe TKfe lp Dl tr tf Min Typ 1.3 Max 1.7 Unit V V pF mW %/K deg nm nm , ( °C ) 94 8029 e 0 Figure 1 : Power Dissipation vs. Ambient Temperature V Frel ­ Relative


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PDF BPW78 D-74025 CQX 13 BPW78
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