The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1034-2.5#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other
LT1009M2 Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other
LT1034-1.2#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other
LTC202 Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other
LT1009 Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other
LT1004-1.2#TR Linear Technology IC SPECIALTY ANALOG CIRCUIT, Analog IC:Other

LNA CIRCUIT Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2010 - what is technical report

Abstract: TR17-1 BGB707L7ESD marking swp 9
Text: : BGB707L7ESD Application: BGB707L7ESD LNA Circuit with low-Q Inductors for 3.3GHz3.8GHz WiMAX Applications , Technical Report TR171 BGB707L7ESD LNA Circuit with low-Q Inductors for 3.3GHz-3.8GHz WiMAX Applications , Report TR171 BGB707L7ESD LNA Circuit with low-Q Inductors for 3.3GHz-3.8GHz WiMAX Applications 4 , . December 2009 Technical Report TR171 BGB707L7ESD LNA Circuit with low-Q Inductors for 3.3GHz-3.8GHz , / 12 16. December 2009 Technical Report TR171 BGB707L7ESD LNA Circuit with low-Q Inductors for


Original
PDF BGB707L BGB707L7 BGB707L7ESD TR171, TR171 what is technical report TR17-1 marking swp 9
"BJT Transistors"

Abstract: Granberg Granberg dye BFG425 BFG425W High IP3 Low-Noise Amplifier C71P transistor databook BJT 24 TRANSISTOR MAKING BFG425 Power amplifier
Text: additional obtainable gain from the LNA circuit . LNA linearity is another important CDMA LNA parameter. A , . DC biasing. DC biasing represents the first step in LNA design. The chosen DC bias circuit should , Vbe Ve Ce Re Figure 4. Typical LNA biasing circuit . Two bias feedback arrangements are , should be the next step in LNA design. Unconditional stability of the circuit is the goal of the LNA , by the manufacturer of the transistor will aid in stability analysis of the LNA circuit . Two main


Original
PDF
2010 - RF LNA 10 GHz

Abstract: SDMB BGB707L7ESD marking swp 9
Text: may be endangered. Technical Report TR170 BGB707L7ESD LNA Circuit with low-Q Inductors for , . 1.0 3 / 12 14. December 2009 Technical Report TR170 BGB707L7ESD LNA Circuit with low-Q , Application: BGB707L7ESD LNA Circuit with low-Q Inductors for 2.3GHz2.7GHz WLAN/WiMAX/SDMB Applications PCB , losses of 0.1dB - 4 / 12 14. December 2009 Technical Report TR170 BGB707L7ESD LNA Circuit , Technical Report TR170 BGB707L7ESD LNA Circuit with low-Q Inductors for 2.3GHz-2.7GHz WLAN/WiMAX/SDMB


Original
PDF BGB707L BGB707L7 TR170, TR170 BGB707L7ESD RF LNA 10 GHz SDMB marking swp 9
1999 - BFG425

Abstract: amplifier rf 18dbm gain 18db BFG425W BFG425 spice parameters High IP3 Low-Noise Amplifier Granberg BJT IC Vce BFG425 Power amplifier
Text: Complete circuit characterization The LNA design will be carried out with a discrete, 5th generation , power gain (Gmax) are good indicators of additional obtainable gain from the LNA circuit . LNA , . Isup Rsup Ib Vc Rb Vb T Vce Vbe Ve Ce Re Figure 4. Typical LNA biasing circuit , stability of the circuit is the goal of the LNA designer. Unconditional stability means that with any load , analysis of the LNA circuit . Two main methods exist in S-parameter stability analysis: numerical and


Original
PDF
AN1676

Abstract: MRF1057 motorola rf spice RK73H2A MRF1057T1 MRF1047T1 MRF1027T1 MDC5001 KOA Chip Resistors Packaging MRF1027
Text: DESCRIPTION This Application Note describes the performance of a cascade LNA circuit using the Motorola , measured data and general information on the LNA circuit are provided. Design goals for the LNA are based , LNA circuit relied on use of the MRF1047T1 Spice Gummel­Poon model, which includes the packages , CIRCUIT DESIGN This two stage cascade LNA design uses both transistors in the common emitter , L4* R3 C2 RF Out 900 MHz LNA Figure 6 shows the printed circuit board layout and parts


Original
PDF AN1676/D AN1676 MRF1047T1 AN1676 MRF1057 motorola rf spice RK73H2A MRF1057T1 MRF1027T1 MDC5001 KOA Chip Resistors Packaging MRF1027
1998 - mrf1057

Abstract: AN1676 MDC5001 MRF1027T1 MRF1047T1 MRF1057T1 RK73H2A Application Note Motorola MOTOROLA small signal transistors
Text: Application Note describes the performance of a cascade LNA circuit using the Motorola MRF1047T1 low noise , information on the LNA circuit are provided. Design goals for the LNA are based on the requirements for a , into the design for improved stabilization over temperature. Design of the cascade LNA circuit relied , of the MRF1047T1 in a cascade LNA design for a pager application. The circuit provides a good , * 900 MHz LNA Figure 6 shows the printed circuit board layout and parts placement for the first stage


Original
PDF AN1676/D AN1676 MRF1047T1 mrf1057 AN1676 MDC5001 MRF1027T1 MRF1057T1 RK73H2A Application Note Motorola MOTOROLA small signal transistors
1998 - dbm-166 mixer

Abstract: AN1675 MRF1057T1 MRF1057 MDC5001 MRF1027T1 MRF1047T1 RK73H2A mrf1027
Text: the performance of the Motorola MRF1057T1 low noise bipolar transistor in a LNA circuit . The , resistance, which makes the impedance match easier and simpler. CIRCUIT DESIGN The LNA circuit is , ­17 11.9 ­25 1.35 23.4 CONCLUSION This high performance LNA circuit was designed using the Motorola MRF1057T1 device. The LNA circuit demonstrated the performance of the MRF1057T1 for an , ­70. Model details are given on the data sheet. Figure 1. LNA Using the MRF1057TI + C4 1.0 µF R2


Original
PDF AN1675/D AN1675 MRF1057T1 MRF1027T1 MRF1047T1 dbm-166 mixer AN1675 MRF1057 MDC5001 RK73H2A mrf1027
1998 - MRF1057T1

Abstract: AN1675 RK73H2A MDC5001 MRF1027T1 MRF1047T1 2.5 ghz lna transistor motorola rf spice 0/MRF1057
Text: DESIGN The LNA circuit is designed using the MRF1057T1 Spice Gummel­Poon model, which includes the , ) 900 ­17 11.9 ­25 1.35 23.4 CONCLUSION This high performance LNA circuit was designed using the Motorola MRF1057T1 device. The LNA circuit demonstrated the performance of the , Application Note describes the performance of the Motorola MRF1057T1 low noise bipolar transistor in a LNA circuit . The Motorola MRF1057T1 is a low noise bipolar junction transistor, which, along with the


Original
PDF AN1675/D AN1675 MRF1057T1 MRF1027T1 MRF1047T1 AN1675 RK73H2A MDC5001 2.5 ghz lna transistor motorola rf spice 0/MRF1057
microwave limiter

Abstract: MMIC limiter microwave chip limiter LNA at microwave range mtt38 microwave receiver MTT-38 TRANSISTOR noise figure measurements mmic A AuSn solder
Text: limiter/ LNA circuit shows gain greater than 19 dB, noise floor (NF) <2.7 dB, return loss better than 18 , CW Broadband iter/ LNA circuit provides a best value References 1 I. J. Bahl, et al., "Multifunction , April 2003 New Technology Advance in Integrated High Power Limiter/ LNA Performance by Inder J , Figure 1: Balanced Three Stage LNA with Limiter can only sustain low-input power levels ranging from 10dBm to novel high power limiter/ LNA which · Balanced configuration, built-in couplers 20 dBm CW or 1


Original
PDF 10dBm MTT-38, microwave limiter MMIC limiter microwave chip limiter LNA at microwave range mtt38 microwave receiver MTT-38 TRANSISTOR noise figure measurements mmic A AuSn solder
1998 - motorola rf spice

Abstract: J2/MRF1057TI MRF1057 dbm-166 mixer RK73H2A MRF1057T1 MRF1047T1 MRF1027T1 MDC5001 AN1675
Text: Motorola MRF1057T1 low noise bipolar transistor in a LNA circuit . The Motorola MRF1057T1 is a low noise , impedance match easier and simpler. CIRCUIT DESIGN The LNA circuit is designed using the MRF1057T1 , circuit , demonstrating the accuracy and reliability of the MRF1057T1 model. LNA PERFORMANCE This LNA , CONCLUSION This high performance LNA circuit was designed using the Motorola MRF1057T1 device. The LNA , on the data sheet. Figure 1. LNA Using the MRF1057TI + C4 1.0 µF VCC 3.7 V R2 22.1


Original
PDF AN1675/D AN1675 MRF1057T1 MRF1027T1 MRF1047T1 motorola rf spice J2/MRF1057TI MRF1057 dbm-166 mixer RK73H2A MDC5001 AN1675
MRF1047T1

Abstract: AN1676 MDC5001 MRF1027T1 MRF1057T1 RK73H2A
Text: describes the performance of a cascade LNA circuit using the Motorola MRF1047T1 low noise bipolar , on the LNA circuit are provided. Design goals for the LNA are based on the requirements for a , design for improved stabilization over temperature. Design of the cascade LNA circuit relied on use of , of the MRF1047T1 in a cascade LNA design for a pager application. The circuit provides a good , high IP3 qualities. " CIRCUIT DESIGN This two stage cascade LNA design uses both transistors in


Original
PDF AN1676/D AN1676 MRF1047T1 AN1676 MDC5001 MRF1027T1 MRF1057T1 RK73H2A
2012 - NJG1148MD7

Abstract: No abstract text available
Text: ) 2 RFIN 10 LNA circuit RFOUT 3 GND 9 Logic circuit VDD 4 NC(GND) 8 5 GND 6 , "H"=VCTL(H)"L"=VCTL(L) LNA Circuit Bypass Circuit ON OFF OFF ON Operating mode LNA mode Bypass mode , CHARACTERISTICS ( LNA mode) Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit Pout , CHARACTERISTICS ( LNA mode) Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit S11 , ( LNA mode) Conditions: VCTL=1.8V, Ta=25oC, Zs=Zl=50 ohm, with application circuit IDD vs. VDD 14 (RF


Original
PDF NJG1148MD7 95GHz, EQFN14-D7
HK1005

Abstract: NJG1129MD7 LNA CIRCUIT
Text: typ. -4.0dB typ. +20.0dBm typ. (Top View) 11 10 9 8 Bypass circuit 12 7 LNA circuit 13 6 Bias circuit Logic circuit 14 1 2 5 3 1. GND 2. GND 3. VINV , RF OUT L4 15nH LNA circuit VDD 13 Logic circuit 14 VCTL 6 Bias circuit , NJG1129MD7 LNA GaAs MMIC NJG1129MD7 ( LNA ) LNA High Gain LNA Low Gain ESD ESD , . GND 14. VCTL 4 "H"=VCTL(H), "L"=VCTL(L) VCTL LNA Mode H High Gain mode L


Original
PDF NJG1129MD7 EQFN14-D7Package 397mm GRM03 8mmx16 12pin HK1005 NJG1129MD7 LNA CIRCUIT
2009 - schematic diagram CORDLESS DRILL

Abstract: BFP620F BFP640 BFP620 applications note TRANSISTOR40GHZ amplifier TRANSISTOR 12 GHZ BFP690 BFP650 AN082 BFP620
Text: Cross-Section Diagram of the LNA Printed Circuit Board. Note spacing between top layer RF traces and internal , BFP640 LNA Circuit Boards, 640-052402 Rev C, taken randomly from a batch of assembled units 12 two-stage BFP640 LNA Circuit Boards, TA = 25 °C, Part 1 Table 5 Board S/N dB[s11]² dB[s21]² dB , /N 12 two-stage BFP640 LNA Circuit Boards, TA = 25 °C, Part 2 Input IP3, dBm Noise Figure , 5-6 GHz Two-Stage LNA Design DetailsAppendixes Table 6 Board S/N 12 two-stage BFP640 LNA Circuit


Original
PDF BFP640 schematic diagram CORDLESS DRILL BFP620F BFP620 applications note TRANSISTOR40GHZ amplifier TRANSISTOR 12 GHZ BFP690 BFP650 AN082 BFP620
NJG1148MD7

Abstract: No abstract text available
Text: ) 2 10 LNA circuit RFIN RFOUT 3 9 Logic circuit GND 4 VDD 8 NC(GND , ) NC(GND) VCTL I TRUTH TABLE VCTL H L “H”=VCTL(H)“L”=VCTL(L) LNA Circuit Bypass Circuit ON OFF OFF ON Operating mode LNA mode Bypass mode Note: Specifications and description , ( LNA mode) VDD=3.3V, VCTL=1.8V, freq=4900~5950MHz, T a =+25°C, Zs=Zl=50Ω, with application circuit , voltage terminal. 9 VDD Supply voltage terminal for LNA and logic circuit . Bypass to ground with


Original
PDF NJG1148MD7 NJG1148MD7 95GHz, EQFN14-D7 95GHz
2009 - F262

Abstract: HK1005 NJG1129MD7
Text: . PIN CONFIGURATION (Top View) 11 10 9 8 Bypass circuit 12 7 LNA circuit 13 6 Bias circuit Logic circuit 14 1 2 5 3 Pin Connection 1. GND 2. GND 3. VINV 4 , 12 RF IN L1 22nH 9 C2 5pF 7 C1 3pF RF OUT L4 15nH LNA circuit VDD 13 , noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA , protection circuit is integrated into the IC to achieve high ESD tolerance. FEATURES Low voltage


Original
PDF NJG1129MD7 NJG1129MD7 EQFN14-D7 397mm F262 HK1005
bfp740

Abstract: what is technical report 5Ghz lna transistor datasheet TR104 BFP740 application note infineon marking L2 RF Bipolar Transistor LNA CIRCUIT
Text: Figure 6-1: Photo of the LNA circuit Figure 6-2: Layout Information www.Infineon.com , BFP740 LNA for 3.5GHz WiMax Application Technical Report TR104 Device: BFP740 Application: LNA for 3.5 GHz WiMax Application Revision: Rev. 1.0 Date: 2008-Nov-21 RF and , BFP740 LNA for 3.5GHz WiMax Application Published by Infineon Technologies AG 81726 München , Technical Report BFP740 LNA for 3.5GHz WiMax


Original
PDF 2008-Nov-21 BFP740 TR104 BFP740 what is technical report 5Ghz lna transistor datasheet TR104 BFP740 application note infineon marking L2 RF Bipolar Transistor LNA CIRCUIT
2013 - OC106

Abstract: No abstract text available
Text: (GND) 13 Bypass circuit 12 11 NC(GND) 2 RFIN 10 LNA circuit RFOUT 3 GND 9 , 7 VCTL NC(GND) I TRUTH TABLE VCTL H L "H"=VCTL(H)"L"=VCTL(L) LNA Circuit Bypass Circuit ON , 7 VCTL 9 VDD Supply voltage terminal for LNA and logic circuit . Bypass to ground with , ) NC(GND) GND 14 1 NC(GND) 13 Bypass circuit 12 11 NC(GND) RF IN 2 RFIN 10 LNA , Transport System. The NJG1148MD7 has a LNA pass-through function to select high gain mode or low gain mode


Original
PDF NJG1148MD7 95GHz, EQFN14-D7 NJG1148MD7 95GHz OC106
2010 - EPFFP6-A2

Abstract: Agilent IC HK1005 NJG1145UA2
Text: , it bypasses LNA circuit to offer higher linearity. In high gain mode, the NJG1145UA2 achieves high , circuit Bypass circuit LNA circuit Bias circuit 1PIN INDEX 1 GND I TRUTH TABLE 3 GND 2 RFOUT "H"=VCTL(H)"L"=VCTL(L) VCTL LNA ON Bypass LNA mode H ON OFF , RF IN GND VCTL 6 VCTL 4 Logic circuit Bypass circuit LNA circuit Bias circuit , RFOUT RF output terminal. This terminal doubles as the drain terminal of the LNA . Please connect


Original
PDF NJG1145UA2 NJG1145UA2 855mg EPFFP6-A2 Agilent IC HK1005
BFP740

Abstract: BFP740 application note TR103 bfp740 board
Text: information Figure 6-1: Photo of the LNA circuit Figure 6-2: Layout Information Measurement Report , LNA using BFP740 for 2.3 ­ 2.7 GHz WiMax Application Technical Report TR103 Device: BFP740 Application: WiMax LNA for 2.3 ­ 2.7 GHz Revision: Rev. 1.0 Date: 2008-Dec-03 RF and Protection , LNA using BFP740 for 2.3 ­ 2.7 GHz WiMax Application Published by Infineon Technologies AG , LNA using BFP740 for 2.3 ­ 2.7 GHz WiMax Application 1. Overview Infineon Device: BFP740 Silicon


Original
PDF 2008-Dec-03 BFP740 TR103 BFP740 BFP740 application note TR103 bfp740 board
2008 - Not Available

Abstract: No abstract text available
Text: High input IP3 Q PIN CONFIGURATION (Top View) 11 12 LNA circuit +2.8V typ. +1.85V typ. EQFN14-D7 , a part of an external matching circuit , and also provide DC power to LNA . RF input terminal. The RF , circuit 8 L3 22nH C2 5pF RF OUT L4 15nH VDD 12 LNA circuit 7 13 Bias circuit 6 C3 , noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA , circuit is integrated into the IC to achieve high ESD tolerance. Q PACKAGE OUTLINE NJG1129MD7 Q


Original
PDF NJG1129MD7 NJG1129MD7 EQFN14-D7
1998 - ANPC-131

Abstract: GPS Antenna for aircraft ANPC-128 ANPC-135
Text: provides for DC transient protection on the input and output sides of the LNA circuit , eliminating the possibility of surge damage. QuickMount's compact size fits any vehicular or portable receiver, and the LNA


Original
PDF ANPC-128 ANPC-131 ANPC-135 GPS Antenna for aircraft
2013 - NJG1145UA2

Abstract: EPFFP6-A2 0019dB
Text: figure. Selecting low gain mode for strong signals, it bypasses LNA circuit to offer higher linearity. In , loss) -1.0dB typ. I PIN CONFIGURATION (Top View) RFIN 5 GND VCTL 6 Logic circuit Bypass circuit 4 LNA circuit 1PIN INDEX Bias circuit 1 GND GND 3 2 RFOU Pin Connection 1. GND 2. GND 3. RFOUT 4. VCTL 5. GND 6. RFIN I TRUTH TABLE VCTL H L "H"=VCTL(H)"L"=VCTL(L) LNA , GND VCTL RF IN 6 Logic circuit Bypass circuit 4 VCTL LNA circuit 1PIN INDEX


Original
PDF NJG1145UA2 EPFFP6-A2 0019dB
2000 - pmb6250

Abstract: smarti 6250 ao21 pmb-6250 PMB2362 P-TSSOP-10 smarti pmb 6250 PMB 2362 52863
Text: Confidential Product Info General Description Package The PMB2362 is a dual band LNA circuit with , Product Description Confidential 2.1 General Description The PMB2362 is a dual band LNA circuit , LNA circuit designed for dual band wireless frontends with excellent performance. 2. LNA1 The LNA1 , Wireless Components Dual LNA PMB 2362 Version 1.1 Specification January 2000 preliminary , prematched input, only 2 external matching components required s GSM900 LNA output matched to 50 Ohm


Original
PDF 82GHz: pmb6250 smarti 6250 ao21 pmb-6250 PMB2362 P-TSSOP-10 smarti pmb 6250 PMB 2362 52863
HK1005

Abstract: NJG1129MD7
Text: . +20.0dBm typ. ! PIN CONFIGURATION (Top View) 11 10 9 8 Bypass circuit 12 7 LNA , an external matching circuit , and also provide DC power to LNA . 12 RFIN RF input terminal , 3pF RF OUT L4 15nH LNA circuit VDD 13 Bias circuit Logic circuit 14 VCTL , noise amplifier GaAs MMIC designed for mobile digital TV application (470~770 MHz). This IC has a LNA , protection circuit is integrated into the IC to achieve high ESD tolerance. ! PACKAGE OUTLINE


Original
PDF NJG1129MD7 NJG1129MD7 EQFN14-D7 397mm HK1005
Supplyframe Tracking Pixel