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LN1VB60 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
LN1VB60 LN1VB60 ECAD Model Others Silicon bridge rectifier Original PDF
LN1VB60 LN1VB60 ECAD Model Shindengen Electric General Purpose Rectifiers - Low Noise Bridges Original PDF

LN1VB60 Datasheets Context Search

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2000 - LN1VB60

Abstract: No abstract text available
Text: SHINDENGEN General Purpose Rectifiers LN1VB60 iLow Noise Bridges OUTLINE DIMENSIONS Case , /W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd LN1VB60 Forward Voltage Forward , 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 LN1VB60 Forward , °C Sine wave 1.6 LN1VB60 Derating Curve Average Rectified Forward Current IO [A] 1.6 1.4 , Temperature Ta [°C] VR = 600V IO 0 0 VR tp D=tp /T T LN1VB60 Peak Surge Forward Capability


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PDF LN1VB60 1mst10ms LN1VB60
2000 - F06A diode

Abstract: LN1VB60
Text: SHINDENGEN General Purpose Rectifiers LN1VB60 iLow Noise Bridges OUTLINE DIMENSIONS Case , ;2000 Shindengen Electric Mfg.Co.Ltd LN1VB60 Forward Voltage Forward Current IF [A] 10 , 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 LN1VB60 Forward Power Dissipation , LN1VB60 Derating Curve Average Rectified Forward Current IO [A] 1.6 1.4 SIN 1.2 1 0.8 0.6 , ] VR = 600V IO 0 0 VR tp D=tp /T T LN1VB60 Peak Surge Forward Capability IFSM 80


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PDF LN1VB60 1mst10ms F06A diode LN1VB60
2010 - LN1VB60

Abstract: marking Ja diode diode marking ja marking 6 bridge diode
Text: Bridge Diode Low Noise type Single In-line Package OUTLINE LN1VB60 Unit : mm Weight : 1.1g typ. Package1V 600V 1.2A Type No. · · SIP Class Date code 3.4 15.6 LN1VB60 3D Feature · Low Noise · Small-SIP 7.1 - 12.2 , Current Current Squared Time Type No. Symbol Conditions LN1VB60 Unit Tstg , LN1VB60 CHARACTERISTIC DIAGRAMS Sine wave 50Hz 50Hz sine wave is used for measurements


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PDF LN1VB60 25unless J534-1 LN1VB60 marking Ja diode diode marking ja marking 6 bridge diode
2008 - LN1VB60

Abstract: No abstract text available
Text: Bridge Diode Low Noise type Single In-line Package OUTLINE LN1VB60 Unit : mm Weight : 1.1g typ. Package1V 600V 1.2A Type No. · · SIP Class Date code 3.4 15.6 LN1VB60 3D Feature · Low Noise · Small-SIP 7.1 - 12.2 , LN1VB60 Unit Tstg -40150 Tj 150 VRM IO IFSM I2t 600 50Hz Ta = 25 50Hz , /W Small SIP Bridge LN1VB60 CHARACTERISTIC DIAGRAMS Sine wave 50Hz Typical


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PDF LN1VB60 25unless 1mst10msTj LN1VB60
2007 - Not Available

Abstract: No abstract text available
Text: Bridge Diode Low Noise type Single In-line Package OUTLINE DIMENSIONS Package1V LN1VB60 600V 1.2A SIP Type No. 15.6±0.3 Unit : mm Weight1.1g typ. Class 3.4±0.2 Date code 7.1 -0.1 0.3 9.3±0.3 LN1VB60 3D - 0.8±0.1 0.9±0.2 10MIN 4±0.2 4±0.2 , = 25 Type No. LN1VB60 -40150 150 600 1.2 50 6 Unit V A A A 2s , 60 J 514 - 6 www.shindengen.co.jp/product/semi/ LN1VB60 CHARACTERISTIC DIAGRAMS


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PDF LN1VB60 LN1VB60 10MIN 25unless wave50Hz
2001 - F06A diode

Abstract: No abstract text available
Text: SHINDENGEN General Purpose Rectifiers LN1VB60 iLow Noise Bridges OUTLINE DIMENSIONS Case , Ês Ž/W Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd LN1VB60 Forward Voltage , 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 LN1VB60 , ] Tj = 150°C Sine wave 1.6 LN1VB60 Derating Curve Average Rectified Forward Current IO [A , Ambient Temperature Ta [°C] VR = 600V IO 0 0 VR tp D=tp /T T LN1VB60 Peak Surge Forward


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PDF LN1VB60 F06A diode
Not Available

Abstract: No abstract text available
Text: Bridge Diode Low Noise type Single In-line Package OUTLINE LN1VB60 Unit : mm Weight : 1.1g typ. Package 1V 600V 1.2A • • 品名 Type No. 級表示 (例) Class ロッ ト記号 (例) Date code 3.4 15.6 SIP LN1VB60 3D Feature • Low Noise â , · 条 件 Symbol Conditions LN1VB60 単位 Unit Tstg −40∼150 ℃ Tj 150 â , LN1VB60 CHARACTERISTIC DIAGRAMS Sine wave 50Hz 50Hz sine wave is used for measurements. Typical


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PDF LN1VB60 J534-1
Not Available

Abstract: No abstract text available
Text: Bridge Diode l u v s t * * * - !* l&MXJ'Jyif Low Noise Bridge Single In-line Package ^ ^ H l OUTLINE DIMENSIONS LN1VB60 600V 1.2A 45 £ 1 · S IP llv t r - V («a±®*nîEowcB, memm*zmm^ê- T/ =25°C) s Item !£-§· Symbol Conditions T stg Tj V rm tTM % - - TypeJ'Jo^ LN1VB60 - 4 0 -1 5 0 150 600 Unit , LN1VB60 fëtÊ IH J P S lS lW tt CHARACTERISTIC DIAGRAMS Forward Power Dissipation P e a k Su rge


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PDF LN1VB60 LN1VB60
2010 - Not Available

Abstract: No abstract text available
Text: Bridge Diode 低ノイズタイプ シングルインライン型 Low Noise type Single In-line Package ■外観図 OUTLINE LN1VB60 Unit : mm Weight : 1.1g typ.) ( Packageï , (例) Class ロッ ト記号 (例) Date code 3.4 15.6 LN1VB60 3D Feature • Low , ™‚間積 Current Squared Time 品 名 Type No. 記号 条 件 Symbol Conditions LN1VB60 , LN1VB60 ■特性図 CHARACTERISTIC DIAGRAMS * Sine wave は 50Hz で測定しています。 ï


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PDF LN1VB60
S1WB(A)60B

Abstract: LN1VB60 LN1WBA60 LN2SB60 LN6SB60 S1NB20 S1YB20 S1ZB20
Text:  Type No. Absolute Maximum Ratings Electrical Characteristics Remarks Outline Vrm [V] IFSM [A] Tstg [°C] Tj [■o] Vf IF (max) Vr=Vrm r,«A] trr (max) e\i (max) ['C/Wl 0ja (max) [°C/W] ffjc (max) [°C/W] lo [A] -(Condilras: To M (maxi [V] ¡{SilitijiS} l= [A] Package Fig. LN1WBA60 600 I.I 25* 50 -40-150 150 1.0 0.55 I0 5 I0 65 — — IW 3I LN1VB60 1.2 25'* 50 I.O 0.6 16 62 — — IV 2I LN2SB60 1.6 25* 120 . 0_, 0.8 I0 65 — — 2S 22 lliSipiSSlü 4


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PDF LN1WBA60 LN1VB60 LN2SB60 LN6SB60 S1YB20 S1ZB20 S1NB20 S1WB(A)60B LN1VB60 LN2SB60 LN6SB60
1999 - 1y smd

Abstract: rectifier s1wb smd 1N
Text: RECTIFIER DIODES Low-frequency rectifying 1W (SMD) Low Noise Bridge Diodes Absolute Maximum Ratings VRM Type No. [V] [A] IO Conditions Tc 1W 1V 2S Electrical Characteristics 3S 5S IFSM Tstg Tj VF (max) [V] Conditions IF IR (max) VR=VRM [µA] trr (max) [µs] jl (max) j a (max) j c (max) Outline Remarks Package Figure [°C] [A] [°C] [°C] [A] [°C/W] [°C/W] [°C/W] LN1WBA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60 *:Ta 600 1.1 1.2 1.6 4 6 25


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PDF LN1WBA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60 S1YB20 S1ZB20 DIUB80 S1NB20 1y smd rectifier s1wb smd 1N
BA60

Abstract: Bridge diodes rectifier s1wb
Text: Rectifier Diodes Low Noise Bridge Diodes Absolute Maximum Ratings Part No. V rm Electrical Characteristics Tj Vf Ir tre lo Conditions To If s m Tstg eil (max) eja (max) ejc (max) Outline (max) [V] Conditions If (max) V r=Vrm (max) [V] LN1W BA60 [A] [°C] [A] [°C] [°C] [A] [mA] [ms] ] [°C/W ] [°C/W ] [°C/W 10 65 62 47 30 26 5.5 3.4 Package Fig. 28 1 LN1VB60 LN 2SB60 LN 4SB60 LN 6SB60 600 1.5 4 6 25* 50 -4 0 -1 5 0 1 20 15 0 1.05


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PDF LN1VB60 2SB60 4SB60 6SB60 S1YB20 S1ZB20 S1NB20 BA60 Bridge diodes rectifier s1wb
Bridge diodes

Abstract: S1NB20
Text: ] [ "C /W ] [TC/W] 10 16 65 62 47 30 26 LN1WBA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60 S S : Ta 25* 25


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PDF LN1WBA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60 S1YB20 S1ZB20 S1NB20 Bridge diodes
S1NB20

Abstract: LN1WBA60 Bridge diodes
Text: R e c tifie r D iodes Low Noise Bridge Diodes Absolute Maximum Ratings Parts No. V rm Electrical Characteristics Vf Tj lo |R Conditions (max) Conditions Tc I fsm Tstg t rr (max) [M S] 6jl (m ax) eja (m ax) ejc (max) [°C/W] Outline (max) [V] IF [A] V r = V rm [mA] [V] [A] [°C] [°C] [°C] [A] [°C/W] [°C/W] Package Fig. LN1WBA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60 : New Products Ta 600 1 1.5 4 6 25* 50 120 -40-150


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PDF LN1WBA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60 S1YB20 S1ZB20 S1NB20 S1NB20 LN1WBA60 Bridge diodes
LN4S860

Abstract: rectifier s1wb
Text: Rectifier Diodes L ow f r e q u e n c y re c tify in g Low Noise Bridge Diodes Absolute Maximum Ratings Type No. V rm 1V Electrical Characteristics Vf to [A] 1.1 [V] LNIWBA60 LN1VB60 LN2SB0O LN4S860 Conduis To [·c] 25* 25* 25* 111 111 Ifsm Tstg Tj (max) Caritas If [V ] [A] 50 50 120 150 170 [·c] [·c] [A] 0 .5 5 0 .6 0 .8 2 3 Ir e\i tfjc tre ffja (max) (max) (max) (max) (max) Vr=V rm UA] M [*C/W] [·C/W] [X3/W] 10 10 5 16 10 6 5 65 62 65 30 26 5 .5


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PDF LNIWBA60 LN1VB60 LN4S860 Lh6SB60 S1YB20 S1ZB20 LN4S860 rectifier s1wb
RM1Y

Abstract: No abstract text available
Text: Rectifier Diodes Low frequency rectifying 1W (Lead type) r Low Noise Bridge Diodes 1W(SMD) Absolute M axim um Ratings Type No. V rm [V] LN 1W BA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60 * : Ta 600 lo 1V 2S Outline Rem arks P ackage Fig31, 32 21 22 23 24 Electrical C haracteristics Tj Vf (m ax) [V] 1.0 1.0 C onditions If [A] 0.55 0.6 0.8 2 3 10 5 Ir (max) V r= V rm [¿


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PDF LN1VB60 LN2SB60 LN4SB60 LN6SB60 Fig31, S1YB20 S1ZB20 1NB20 RM1Y
rectifier s1wb

Abstract: s1wb rectifier ic s1wb s1wb 60 48 S1NB60 55 smd IC IR 50
Text: iuS) [°C/W] [°C/W] [°C/W] 10 16 10 65 62 47 30 26 23 23 to LN1WBA60 LN1VB60 LN2SB60 LN4SB60


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PDF S1YB20 S1YB60 S1ZB60 S1ZB80 D1UBA80 S1NB20 S1NB60 S1NB80 -S1NBB80 LN1WBA60 rectifier s1wb s1wb rectifier ic s1wb s1wb 60 48 S1NB60 55 smd IC IR 50
3SBA60

Abstract: D20VT80 TK3L10Z TH3J10 TH3L20 TH3L10 Z TH3L10 D20VT60 a2430 10SC4M
Text: . 22 KP4R25. 42 LN1VB60. 25 LN1W BA60


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PDF 2SC4585 2SC4663 2SC4664 2SC4668 2SK1392 2SK1393 2SK1394 2SK1395 2SK1396 3SBA60 D20VT80 TK3L10Z TH3J10 TH3L20 TH3L10 Z TH3L10 D20VT60 a2430 10SC4M
SN30SC4

Abstract: D15VBA60 sivb s4vb bridge rectifier rectifier s1wb smd 1f SIVBA20 SMD 741 4 terminal bridge rectifier S4VB D25VB20
Text: Electrical Characteristics Tj Conditions Tc [V] LN1WBA60 LN1VB60 LN2SB60 LN4SB60 LN6SB60


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PDF M1F60 D1F20 D1N20 DINF60 D2F20 D3F60 D4F60 S2V20 S3V20 D1CS20 SN30SC4 D15VBA60 sivb s4vb bridge rectifier rectifier s1wb smd 1f SIVBA20 SMD 741 4 terminal bridge rectifier S4VB D25VB20
SHINDENGEN TR 222

Abstract: D2S860 D25VB60 F10LC20U D15VBA S1WBA60B d15vba60 D4SBA80 DF25SC6M S1WBA80Z
Text: 1. -« g a ff* * lo (A ) V rm (y \ ^ < 4 ^ 0.4 0.8 SIYB20 S1ZB20 S1NB20 1 S1WBA20 S1VB20 S1VBA20 V a» 600 S1YB60 S1ZB60 S1NB60 S1WBA60 S1WBA60B S1VB60 S1VB60Z S1VBA60 LN1WBA60 LN1VB60 D2SB20 1.5 1.6 D3B20 D3SBA20 U4SB20 U4SBA20 D4SBS4 (40V) D5SB20 D5SBA20 6 U6SB20 D2SBA20 D2SB60 D2SBA60 LN2SB60 D3SB60 D3SBA60 U4SB60 Ü4SBA60 LN4SB60 D4SBS6 (60V) D5SB60 D5SBA60 U6SB60 U6SBA60 LN6SB60 D10XB60 D10XB60H D15XB60 D15XB60H S15VB60 D15VBA60 D20XB60 D25XB60 S25VB60 D25VB60 S50VB60 S50VB80 * D10XB80 20 30 V rM D6SB80 *° (A


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PDF SIYB20 S1ZB20 S1NB20 S1WBA20 S1VB20 S1VBA20 S1YB60 S1ZB60 S1NB60 S1WBA60 SHINDENGEN TR 222 D2S860 D25VB60 F10LC20U D15VBA S1WBA60B d15vba60 D4SBA80 DF25SC6M S1WBA80Z
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