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LN166 datasheet (5)

Part ECAD Model Manufacturer Description Type PDF
LN166 LN166 ECAD Model Panasonic GaAs Infrared Light Emitting Diode Original PDF
LN166 LN166 ECAD Model Others The Optical Devices Data Book (Japanese) Scan PDF
LN166 LN166 ECAD Model Panasonic Light Emitting Diodes Scan PDF
LN166 LN166 ECAD Model Panasonic Light Emitting Diodes LED Scan PDF
LN166 LN166 ECAD Model Panasonic Light Emitting Diodes LED Scan PDF

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Not Available

Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN166 G aAs Infrared Light Emitting Diode 05.0+0.2 For optical control systems ■Features • • • • • High-power output, high-efficiency : Ie = 10 mW /sr (min.) Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy , Infrared Light Emitting Diodes LN166 IFP — Duty cycle IF — Ta Ipp — Y p tw = 1 0 [ l s


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PDF LN166 100Hz
Infrared Emitting Diode

Abstract: LN166
Text: Infrared Light Emitting Diodes Panasonic LN166 GaAs Infrared Light Emitting Diode For optical control systems ■Features • High-power output, high-efficiency : Ie = 10 mW/sr (min.) • Light emitting spectrum suited for silicon photodetectors • Good radiant power output linearity with respect to input current • High center radiant intensity • Transparent epoxy resin package â , Material Copyrighted By Its Respective Manufacturer Infrared Light Emitting Diodes LN166 Ip — Ta


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PDF LN166 100Hz Infrared Emitting Diode LN166
2003 iff

Abstract: No abstract text available
Text: Infrared Light Emitting Diodes Panasonic LN166 GaAs Infrared Light Emitting Diode For optical control systems ■Features • High-power output, high-efficiency : Ie = 10 mW/sr (min.) • Light emitting spectrum suited for silicon photodetectors • Good radiant power output linearity with respect to input current • High center radiant intensity • Transparent epoxy resin package ■Absolute Maximum , Electronic-Library Service CopyRight 2003 Infrared Light Emitting Diodes LN166 Ip — Ta -H s "V" sâ


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PDF LN166 100Hz 2003 iff
Not Available

Abstract: No abstract text available
Text: Infrared Light Emitting Diodes Panasonic jj5.0±0._2 LN166 G aAs Infrared Light Em itting Diode Unit : mm For o ptical control system s Features · · · · · High-power output, high-efficiency : Ie = 10 mW /sr (min.) Light emitting spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy , /sr nm nm 1.6 10 V |iA pF deg. Panasonic 1 Infrared Light Emitting Diodes LN166 IF


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PDF LN166 100Hz 0102Q.
Not Available

Abstract: No abstract text available
Text: LN66 LN66A LN66F LN66(NC) LN66(L) LN68 LN69 LN77L LN166 LN155 LN182 LN 182-(S C ) P5002-1 100 P5002


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PDF LN143 LN122WS LN122WF LN124W LN145W T0-18 MR02-1 MF02-1 P5F02-2
LT3SA

Abstract: LN9705S LN9705 PD P3002.2 LN145W LN124W LN122WS LN122WF P700 LN7301F
Text: Long lead P3002-2 50 75 - 1.5 940 15 LN77L 50 Long lead P5002-4 100 190 10 1.9 860 20 LN166 50


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PDF LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LT3SA LN9705S LN9705 PD P3002.2 P700 LN7301F
PR002-2

Abstract: mru2 PR0022
Text: Iff Semiconductor Laser Diodes Appli cations VD LBP LN166 AL Type No. LNC7Q2DS/MS/PS


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PDF Plastic50 P5002-1 P5002-Ì P5002-1N P5002-2 P3002-1 P3002-2 P5002-4 PR002-2 mru2 PR0022
122dl

Abstract: TLR215A L3080 LN76 18AF L4021 L-103 L2792-02 LN151L LN51F
Text: - LN76 7 50 - - 1.8 100 880 ±25 100 180 - L-lll ¿5 LN166 - - 10 100 1.6 100 950 ±20 100 160 -


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PDF L2791 L-101 O-467 L2792-02 L-102 L3080 L-148 L30si L4021 122dl TLR215A L3080 LN76 18AF L4021 L-103 L2792-02 LN151L LN51F
2001 - LN166

Abstract: LNA2904L
Text: Infrared Light Emitting Diodes LNA2904L ( LN166 ) GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 Features 7.65±0.2 High-power output, high-efficiency : Ie = 10 mW/sr (min.) 1.0 Not soldered For optical control systems Good radiant power output linearity with respect to input current High center radiant intensity 13.5±1.0 11.5±1.0 3.9±0.3 1.0 Emitted light spectrum suited for silicon photodetectors 2-1.0±0.15 2-0.6±0.15 Transparent epoxy resin package


Original
PDF LNA2904L LN166) 40nductor LN166 LNA2904L
2004 - LNA2904L

Abstract: LN166
Text: Infrared Light Emitting Diodes LNA2904L ( LN166 ) GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 7.65±0.2 (1.0) 3.9±0.31 (1.0) 11.5±1.0 · High-power output, high-efficiency: Ie = 10 mW/sr (min.) · Emitted light spectrum suited for silicon photodetectors · Good radiant power output linearity with respect to input current · High center radiant intensity · Transparent epoxy resin package 13.5±1.0 Features Not Soldered 5.0±0.2 2-1.0±0.15 2-0.6±0.15


Original
PDF LNA2904L LN166) LNA2904L LN166
2008 - LNA2904L

Abstract: LN166
Text: This product complies with the RoHS Directive (EU 2002/95/EC). Infrared Light Emitting Diodes LNA2904L ( LN166 ) GaAs Infrared Light Emitting Diode For optical control systems Features High-power output, high-efficiency: Ie = 10 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current High center radiant intensity Transparent epoxy resin package Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit


Original
PDF 2002/95/EC) LNA2904L LN166) LNA2904L LN166
B029A

Abstract: UN039
Text: 1.9 1.9 1.9 1.9 2.0 1.2 1.2 1.2 For remote control LN66(NC) LN66(L) LN68 LN69 LN77L LN166 LN64


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PDF LN7301M005 122WS LN122WF LN184 LN189L LN9860/P/PR LN189M LN189S LN671 LN51L B029A UN039
LNC703PS

Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Text: LN66A LN66F LN66(NC) For remote LN66(L) control LN68 LN69 LN166 LNA2801L LNA2901L 3 5 f Plastic 5


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PDF LN124W P5F02-1 PSF02-1 LN155 LN184 LN189L PR002-1 PR002-2 LNC703PS LN9P01S P50024 LNA4401 PR0022 LN68
LN9705

Abstract: LN143 mr02 MR02-1 C3021 LN145W LN124W LN122WS LN122WF LN9705S
Text: Long lead P3002-2 50 75 - 1.5 940 15 LN77L 50 Long lead P5002-4 100 190 10 1.9 860 20 LN166 50


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PDF LN143 LN122WS MR02-1 LN122WF MF02-1 LN124W LN145W P5F02-2 PSF02-1 LN9705 mr02 C3021 LN9705S
2004 - Not Available

Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2904L ( LN166 ) GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 7.65±0.2 (1.0) 3.9±0.31 11.5±1.0 13.5±1.0 M Di ain sc te on na tin nc ue e/ d • High-power output, high-efficiency: Ie = 10 mW/sr (min.) • Emitted light spectrum suited for silicon photodetectors • Good radiant power output linearity with respect to input current • High center radiant intensity • Transparent epoxy resin package (1.0


Original
PDF LNA2904L LN166)
AN3962FB

Abstract: MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: No file text available


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PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 IC AN7135 MN1874033 an3814k MN1883214 an8294nsb mn4117405 mn171202
3866S

Abstract: transistor a999 bs 7818 -1995 A999 transistor transistor tt 2206 a1535A TT 2206 transistor 8340UAS 2SD 4515 transistor 3866S
Text: No file text available


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PDF 1020G N12861 N12B62 MN1381 MN13811 MN13821 15P0802 15P5402 58851A 70803A 3866S transistor a999 bs 7818 -1995 A999 transistor transistor tt 2206 a1535A TT 2206 transistor 8340UAS 2SD 4515 transistor 3866S
2010 - ln2054

Abstract: 70H40 70H20A 70H30A 70H40A 70H80 5MO 165 20M20 lN3261 70Ma20
Text: ·08A lN1662 lN1663 lN1664 lN1665 lN1666 KGB0611SX KGB0612SX SCSM05 SCSMl lN3085 45Ml0 45MA20 SCSM2 lN3086


Original
PDF KG01420SX KG01421SX lN2789 KG01422SX 55HQ020 lN2128 lN2128A lN2129 lN2129A 20MA10 ln2054 70H40 70H20A 70H30A 70H40A 70H80 5MO 165 20M20 lN3261 70Ma20
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