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Not Available

Abstract: No abstract text available
Text: versus junction temperature; V r = VRWMmax- 616 ~\r June 1986 LL53T31 0 0 3 2 ^ 1 3S3


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PDF BYX10G OD-57. 0032T40 LL53T31
Not Available

Abstract: No abstract text available
Text: LL53T31 00257*14 LT1 H A P X PMBD 914 Silicon planar epitaxial high speed diodes N AUER PHILIPS


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PDF LL53T31 7Z613261
Not Available

Abstract: No abstract text available
Text: N AMER PH ILI PS/ DI SC RE TE TOD D LL53T31 OOlOOflb T ■m MAINTENANCE TYPES BYX32 SERIES _ J \ SILICON RECTIFIER DIODES Diffused silicon diodes in metal envelopes w ith ceramic insulation, intended fo r power rectifier application. The series consists o f the follow ing types: Normal p olarity (cathode to stud): B Y X 3 2 -6 0 0 to B Y X 3 2 -1 6 0 0 Reverse polarity (anode to stud): B Y X 3 2 -6 0 0 R to BYX32—1600R QUICK REFERENCE D A T A 600 B Y X 3 2 - 0qor


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PDF LL53T31 BYX32 BYX32â 1600R 1000R 1200R
Not Available

Abstract: No abstract text available
Text: – LL53T31 0014737 0 BUZ347 T-39-13 423


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PDF BUZ347 T0218A bb53T31 001473S T-39-13 001473b LL53T31
BFW11

Abstract: bfw11 equivalent BFW10 in drain resistance
Text: N-channel silicon FETs J V. BFW10 BFW11 / July 1971 LL53T31 0033761 141 135


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PDF BFW10 BFW11 bb53T31 DQ3S77b BFW11 bfw11 equivalent BFW10 in drain resistance
Not Available

Abstract: No abstract text available
Text: =150« R4 = 3 n tr = t f = 1 5 n s tp = 10 pis T = 500#/s ^ A u g u s t 1988 LL53T31 0035012


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PDF TIP145 TIP146 TIP147 OT-93 TIP140, TIP141 TIP142. TIP145
BGY41

Abstract: BGY41B BGY41A
Text: = 150 mW E— 13 N AflER PHILIPS/DISCRETE OLE D ■LL53T31 0D1325A 5 ■86D


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PDF 0Q132SS BGY40A BGY41A BGY40B BGY41B BGY40A BGY41A LL53T31 BGY41 BGY41B
BDS61A

Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
Text: 1991 ■LL53T31 DDBMSfl^ 433 ■This Material Copyrighted By Its Respective Manufacturer Philips


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PDF BDS61 OT223) BDS60/60A/60B/60C. OT223 BDS61A BDS61B BDS61C smd npn darlington Darlington NPN Silicon Diode smd diode LC 61 SMD 547 DIODE
BFR29

Abstract: N-CHANNEL INSULATED GATE TYPE
Text: 262 September 1971 ■LL53T31 □03SCIDQ 504 This Material Copyrighted By Its Respective


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PDF BFR29 BFR29 N-CHANNEL INSULATED GATE TYPE
BF966

Abstract: No abstract text available
Text: Dimensions in mm Fig. 1 SOT-103. 0,7max N AflER PHILIPS/DISCRETE BF966 DhE D LL53T31 QDIHTVS


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PDF bbS3T31 aQ12c BF966 BF966
F266

Abstract: AF266 BUV26 BUV26A
Text: AUER PHILIPS/DISCRETE BUV26 BUV26A b'ìE D LL53T31 002ômH bä? HAPX THERMAL RESISTANCE From


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PDF b53131 0D2fl44fl BUV26 BUV26A T0-220 00E64S1 7Z89210 200/iH F266 AF266 BUV26A
Not Available

Abstract: No abstract text available
Text: RESISTANCE From junction to ambient in free a ir 46 December 1990 r L.L.53T31 0035711 SEA ^th


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PDF BC264A tjtiS3T31 0D3S715
BU808

Abstract: No abstract text available
Text: BU808 SSE D LL53T31 aniatbo □ ■T-33-T5 Ptot max ' ' ne> (2) Second-breakdown limits. I


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PDF T-33-T5 T-33-75 7Z81799 BU808
MRC23

Abstract: URC204 BSP152
Text: – L.L53T31 Q023A5S TSfl «APX Philips Semiconductors Product specification N-channel enhancement mode


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PDF bbS3T31 BbPl52 OT223 OT223 0023flSfl BSP152 MRC209 MRC23 URC204 BSP152
Not Available

Abstract: No abstract text available
Text: LL.53T31 0020L77 5 PowerMOS transistor Fast Recovery Diode FET BUK637-450B REVERSE DIODE


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PDF 0020L BUK637-450B Qa50t T-39-15
BD 239A

Abstract: No abstract text available
Text: ■L.L53T31 D O l ^ M T ■Fig. 6 Typical static forward current transfer ratio as a


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PDF BD240; BD240A BD240B; BD239; BD239G. BD240 L53T31 BD 239A
BYV92-500M

Abstract: No abstract text available
Text: ii N AMER PHILIPS/DISCRETE MAINTENANCE TYPE 2SE D LL53T31 0 0 2 2 b b l 0 ■B Y V 9 2 tjh H Ib b 7 -0 2 -1 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop,ultra fast reverse recovery times, very low stored charge and soft recovery characteristic. They are intended for use in switched-mode power supplies and high-frequency circuits in general, where both low conduction and low


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PDF LL53T31 BYV92-300 30issible bhS3T31 BYV92 T-03-19 bbS3T31 QD22bb7 BYV92-500M
S3C marking

Abstract: No abstract text available
Text: - LL.53T31 0DE3543 513 ■APX Product specification N AUER PHILIPS/DISCRETE h?E D


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PDF BF556A BF556B BF556C BF556B 23SHt. bbS3031 S3C marking
Not Available

Abstract: No abstract text available
Text: LL53T31 0D3SSS2 1 mi 1 103 lF ImA) PO40/44A O ptocoupler Fig. 25 T afnb = 25 °C; t p =


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PDF PO40/44A OT90B PO40/44A P040A, P042A, P043A, P044A satur10' bbS3T31 0D35S50
diode h5e

Abstract: BUK552 BUK552-50A BUK552-50B T0220AB
Text: LL53T31 QOSGbOT T BUK552-50A BUK552-50B T-39-11 mm ID/A SUB-THRESHOLD CONDUCTION 1E-02 1E-03 1E-05 1E-06


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PDF BUK552-50A BUK552-50B T-39-/Ã BUK552 diode h5e T0220AB
bt 44a

Abstract: 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
Text: . J Ç February 1986 333 LL53T31 0035551 342 This Material Copyrighted By Its Respective


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PDF P040/44A OT90B P040/44A P040A, P042A, P043A, P044A LL53T31 bt 44a 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
transistor 1264-1

Abstract: bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801
Text: Respective Manufacturer Philips Semiconductors ■LL53T31 DD31S31 142 ■APX Product specification NPN 5


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PDF BFG90A OT103 OT103. transistor 1264-1 bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801
Not Available

Abstract: No abstract text available
Text: frequency as a function of collector current. 714 Philips Semiconductors LL53T31 0031t.LT flT4


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PDF BFQ135 OT172A1
philips 4859

Abstract: No abstract text available
Text: 4), 1986 LL53T31 0025214 634 * A P X Philips Semiconductors N APIER PHILIPS/DISCRETE NPN 9


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PDF bbS3T31 D05SB11 BFR505 BFR505 philips 4859
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