The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC1100AMJ8/883B Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, CERDIP-8, Instrumentation Amplifier
LTC1100AMJ Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, CERDIP-8, Instrumentation Amplifier
LTC1100ACJ Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8, Instrumentation Amplifier
LTC1100ACN Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8, Instrumentation Amplifier
LTC1100AMJ8 Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, CDIP8, 0.300 INCH, HERMETIC, CERDIP-8, Instrumentation Amplifier
LTC1100ACN8 Linear Technology IC INSTRUMENTATION AMPLIFIER, 10 uV OFFSET-MAX, 0.018 MHz BAND WIDTH, PDIP8, MINI, PLASTIC, DIP-8, Instrumentation Amplifier

LL-1100-A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
5V VSG MOSFET

Abstract: high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
Text: technology in a 5 pin plastic envelope, configured as a single high side switch. APPLICATIONS General , II Nominal load current (ISO) 1.6 A SYMBOL PARAMETER MAX. UNIT VBG Continuous off-state supply voltage 50 V II Continuous load current 4 A 1 Continuous junction temperature 150 °C Ron On-state , Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor BUK203-50X TOPFET high , ; R, = Rs > 4.7 kil - 16 V II Continuous load current Tmb<110°C - 4 A Pd Total power dissipation


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PDF BUK203-50X OT263 T0220 5V VSG MOSFET high side switch PowerMOS transistor TOPFET high side switch BUK203-50X TOPFET high side switch
AMS-3653

Abstract: MIL-l-22129
Text: @SPC TECH N O L O G Y RoHS Compliant REVISIONS A LL RIGHTS RESERVED. NO PORTION OF THIS , JC HO 8/20/01 3 /2 8 /0 6 1896 100 FEET MINIMUM SPECIFICATIONS: TTI series is a Non-Toxic , ) 0.091(2.31) 0.112(2.84) 0.139(3.53) 0.174(4.42) 0.342(8.69) SPC Type No. TTI-S28- 1100 -NAT TTI-S26- 1100 -NAT TTI-S24- 1100 -NAT TTI-S22- 1100 -NAT TTI-S20- 1100 -NAT TTI-S18- 1100 -NAT TTI-S16- 1100 -NAT TTI-S14- 1100 -NAT TTI-S12- 1100 -NAT TTI-S10- 1100 -NAT TTI-S08- 1100 -NAT TTI-S06- 1100 -NAT TTI-S00- 1100 -NAT 0.015(0.38


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PDF SPC--F005 SPC--F005 AMS-3653 MIL-l-22129
BUK202-50X

Abstract: PowerMOS transistor TOPFET high side switch BUK202
Text: ; condition lL = 2 A April 1995 6 This Material Copyrighted By Its Respective Manufacturer Rev 1.100 , technology in a 5 pin plastic envelope, configured as a single high side switch. APPLICATIONS General , II Nominal load current (ISO) 9 A SYMBOL PARAMETER MAX. UNIT VBG Continuous off-state supply voltage 50 V II Continuous load current 20 A 1 Continuous junction temperature 150 °C Ron On-state , 263-01 Fig. 2. April 1995 1 This Material Copyrighted By Its Respective Manufacturer Rev 1.100


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PDF BUK202-50X OT263 T0220 BUK202-50X PowerMOS transistor TOPFET high side switch BUK202
BUK202-50Y

Abstract: PowerMOS transistor TOPFET high side switch
Text: ; condition lL = 2 A April 1995 6 This Material Copyrighted By Its Respective Manufacturer Rev 1.100 , technology in a 5 pin plastic envelope, configured as a single high side switch. APPLICATIONS General , II Nominal load current (ISO) 9 A SYMBOL PARAMETER MAX. UNIT VBG Continuous off-state supply voltage 50 V II Continuous load current 20 A 1 Continuous junction temperature 150 °C Ron On-state , 263-01 Fig. 2. April 1995 1 This Material Copyrighted By Its Respective Manufacturer Rev 1.100


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PDF BUK202-50Y OT263 T0220 BUK202-50Y PowerMOS transistor TOPFET high side switch
K2025

Abstract: No abstract text available
Text: 2 A April 1995 339 Rev 1.100 Philips Semiconductors Product specification , Fig 21 condì ion s ls = 50 \ A , = 5 V, t'ßG = 3 V = 0 A April 1995 341 Rev 1.100 * C , DESCRIPTION Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch. BUK202-50X QUICK REFERENCE DATA SYMBOL , Continuous load current Continuous junction temperature On-state resistance MIN. 9 MAX. 50 20 150 38 UNIT A


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PDF BUK202-50X K2025
PowerMOS transistor TOPFET high side switch

Abstract: BUK203-50Y
Text: = 50 \iA, VIG = 5 V, VBG = 13 V, lL = 0 A April 1995 8 Rev 1.100 Philips Semiconductors Product , technology in a 5 pin plastic envelope, configured as a single high side switch. APPLICATIONS General , ii Nominal load current (ISO) 1.6 A SYMBOL PARAMETER MAX. UNIT VBG Continuous off-state supply voltage 50 V ii Continuous load current 4 A 1 Continuous junction temperature 150 °C f>on On-state resistance 220 mil FEATURES ⠀¢ Vertical power DMOS switch ⠀¢ Low on-state resistance ⠀¢ 5 V logic


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PDF BUK203-50Y BUK203-50Y OT263 T0220 PowerMOS transistor TOPFET high side switch
Not Available

Abstract: No abstract text available
Text: ; condition lL = 0.5 A April 1995 372 Rev 1.100 Philips Semiconductors Product specification , protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high , . 1.6 MAX. 50 4 150 220 UNIT A UNIT V A II SYMBOL APPLICATIONS General controller for driving , HSS G I Fig. 3. April 1995 367 Rev 1.100 Philips Semiconductors Product , V V A W -55 - ·c ·c ·c mA mA mA mA 5 5 20 20 _ 1.4 J ESD LIMITING VALUE


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PDF BUK203-50Y BUK203-50Y
bg 22 transistor

Abstract: No abstract text available
Text: FIqn = f(Tj); parameter VB G ; condition lL = 0.5 A April 1995 584 Rev 1.100 Philips , 0 A April 1995 586 Rev 1.100 Philips Semiconductors Product specification , protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high , resistance MIN. 1.6 MAX. 50 4 150 220 UNIT A UNIT V A "C m fì APPLICATIONS General controller for driving , L -HSS G Fig. 3. connected to pin 3 April 1995 579 Rev 1.100 Philips


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PDF BUK203-50Y 3-50Y bg 22 transistor
Q1553-45

Abstract: NHI-1553RT nhi-1561 DAT10 DAT12
Text: SA DIM A B D E F G H J 6 5 i TYP TO L (+/- Inches) (inches) 1.100 SQ. 0.010 10 E Q .S P .@ , L H_DAT13 H_DAT14 H_DAT15 I/O_DAT0 DIM A B C D E F G TYP (inches) 1.100 SQ 16 EQ SP @ 0.140 , DIM A B TYP (inches) 1.830 " 16 EQ SP m 15 EQ SP @ 0.900 " 1.100 " 1.330 " 0.225 " 0.018 " DIA. 0.200 , following diagram. A B n ii n ii n n i; ;j n y n i: i L1LEÌ DIM TYP (inches) 1.100 SQ 16 EQ SP @ , BUS_A_L BUS A TOP VI EW A - B " C - K - c r NATIONAL HYBRID NHI-1553RT D ï- F DUAL


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PDF NHI-1553RT NHI-1553RTFP NHI-1554RT NHI-1554RTFP NHI-1561RT NHI-1591RT NHI-1561RTFP NHI-1591RTFP NHI-1562RT NHI-1592RT Q1553-45 nhi-1561 DAT10 DAT12
K2025

Abstract: k202 uk202
Text: t3= 1 3 V , l L = 0 A conai ions ls Ä ->0\iA, Vm » 5 V, vB April 1995 341 Rev 1.100 , switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high side switch , MAX. 50 20 150 38 UNIT A UNIT V A APPLICATIONS General controller for driving lamps, motors , INPUT CONTROL & PROTECTION % If - A - · CIRCUITS hU % POWER MOSFET LOAD GROUND Fig , April 1995 334 Rev 1.100 Philips Semiconductors Product specification PowerMOS


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PDF BUK202-50X 100\is K2025 k202 uk202
BUK202-50Y

Abstract: buk20250y
Text: ; condition lL = 2 A April 1995 350 Rev 1.100 Philips Semiconductors Product specification , , VBG = 13 V, lL = 0 A April 1995 352 Rev 1.100 Philips Semiconductors Product , protected power switch based on M O SFET technology in a 5 pin plastic envelope, configured as a single high , On-state resistance MIN. 9 UNIT A UNIT V A ·c SYM BOL MAX. 50 20 150 38 APPLICATIONS , CONFIGURATION SYMBOL April 1995 345 Rev 1.100 Philips Semiconductors Product specification


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PDF BUK202-50Y BUK202-50Y buk20250y
pfe 225

Abstract: K203 EUK203-50X
Text: ; condition lL = 0.5 A April 1995 361 Rev 1.100 Philips Semiconductors Product specification , protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high , resistance MIN. 1.6 MAX. 50 4 150 220 UNIT A UNIT V A ·c mi2 APPLICATIONS General controller for driving , April 1995 356 Rev 1.100 Philips Semiconductors Product specification PowerMOS , V A W -C ·c "C 5 5 20 20 mA mA mA mA . 1.4 J ESD LIMITING VALUE SYMBOL vc


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PDF BUK203-50X BUK203-50X pfe 225 K203 EUK203-50X
BUK202-S0Y

Abstract: No abstract text available
Text: VB Q ; condition lL = 2 A April 1995 350 Rev 1.100 Philips Semiconductors Product , protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high , resistance MIN. 9 MAX. 50 20 150 38 UNIT A UNIT V A 'C m ii APPLICATIONS General controller for driving , G T B Fig. 3. April 1995 345 Rev 1.100 Philips Semiconductors Product , T,*<25 -C during soldering - 32 16 20 125 175 150 250 V V A W -55 - ·c ·c ·c mA mA mA


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PDF BUK202-S0Y BUK202-50Y BUK202-5QY
Not Available

Abstract: No abstract text available
Text: /, = ffVgn); condition U< a = 5 V April 1995 362 Rev 1.100 Philips Semiconductors , V, iL - 0 A li April 1995 363 Rev 1.100 Philips Semiconductors Product , protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high , resistance MIN. 1.6 UNIT A UNIT V A "C mß MAX. 50 4 150 22 0 APPLICATIONS V bg General , 356 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor TOPFET


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PDF BUK203-50X BUK203-5QX BUK203-50X
K203

Abstract: No abstract text available
Text: V8G; condition iL = 0.5 A April 1995 372 Rev 1.100 Philips Semiconductors Product , power switch based on M O SFET technology in a 5 pin plastic envelope, configured as a single high side switch. QUICK REFERENCE DATA SYM B O L II SYM BO L PA R A M ET E R Nominal load current (ISO) PA R AM , On-state resistance MIN. 1.6 MAX. 50 4 150 220 UNIT A UNIT V A *C m ii APPLICATIONS General controller , TOPFET L s HSS G Fig. 3. April 1995 367 Rev 1.100 Philips Semiconductors Product


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PDF BUK203-50Y BUK203-50Y K203
TF5S03ZZ

Abstract: MIL-T-27 delta electronics mp 130 delta mp-130 MIL-PRF-27F 1203 6d 786D LT 831 SI 3205 115850
Text: Specifications Input Primary: WYE: 120VL-Com. or 208 V L-L Suffix A DELTA: 120 V L-L Suffix C DELTA: 230 V L-L Suffix E DELTA: 440 V L-L Suffix F NOTE: To order a specific input voltage, add suffix to model , . Specify the Letter "M" in the model number, e.g., 6DM15-200 (). NOTE: MIL-PRF 27F*, add .20 to Dim. A , Dimensions Size A B C D E F G 1 2 3 6.10 7.70 7.70 4.10 4.10 5.10 , 4.86 5.24 5.24 5.24 7.50 7.50 7.50 7 8 9 11.00 11.00 11.00 4.85 5.35 5.85


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PDF TF5S03ZZ 120VL-Com. 15-200E TF5S03ZZ MIL-T-27 delta electronics mp 130 delta mp-130 MIL-PRF-27F 1203 6d 786D LT 831 SI 3205 115850
Not Available

Abstract: No abstract text available
Text: 12-8 12-7 A ll A ll A ll ea ea ea 21.45 24.95 26.95 RPD-1 RPD-2 1-100 5-150 , ' ⠖ 02 RFI RF2 mm 1 m V/degree RF1/RF2 ' ⠖ ' MAX. in -p h a s e Typ, Min. RF1-RF2 Min. 1 CASE STYLE Typ. Pago PRjpE  © c t hand­ book) OFFSET Typ. Max. c 0 n n NoteB 1 o n Qty- SYPD-1 SYPD-2 1-100 10-200 DC-50 DC-50 7 1 8 , 12-7 12-7 TTT167 TTT167 ec ec 14.95 18.95 LPD-1 1-100 DC-50 7 8 500


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PDF DC-50 TTT167 11III 35C166,
National Hybrid

Abstract: NHI-1561RTfp NHI-1554RTFP NHI-1553RTFP DAT10 DAT12 DAT14 Sp 0800
Text: Plug-In Dimensions DIM A B C D E F G H J K TYP (inches) 1.830 " 16 EQ SP @ 15 EQ SP @ 0.900 " 1.100 " , Dimensions DIM A B C D E F G H J K TYP (inches) 1.830 " i6 EQ sp m 15 EQ SP @ 0.900 " 1.100 " 1.330 " 0.225 , DAT15 I/O_DAT0 DIM A B C D E F G TYP (Inches) 1.100 SQ 16 EQ SP@ 0.140 0.065 0.400 0.018 0.010 , HWRL_L HVVRH L H DAT13 H_DAT14 H_DAT15 I/O_DAT0 DIM A B C D E F G TYP (Inches) 1.100 SQ 16 EQ SP , DIM A B C D E F G J K TYP (inches) 1.830 " 16 EQ SP @ 15 EQ SP @ 0.900 " 1.100 " 1.330 " 0.225 " 0.018


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PDF NHI-1553RT NHI-1553RTFP NHI-1554RT NHI-1554RTFP NHI-1561RT NHI-1561RTFP NHI-1562RT NHI-1562RTFP NHI-1572RT NHI-1572RTFP National Hybrid DAT10 DAT12 DAT14 Sp 0800
UL-224 vw-1

Abstract: TSI-S18-1100-NAT AMS-3653 Ta381 MIL-l-22129
Text: ©SPC i r i RoHS Compliant A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN , 1896 / / / 100 FEET MINIMUM SPECIFICATIONS: TSI series is a Non-Toxic, chemically inert , rigid) Inside Diameter - 1 Wall Thickness - 1 SPC Part No. TSI-S24- 1100 -NAT TSI-S22- 1100 -NAT TSI-S20- 1100 -NAT TSI-S18- 1100 -NAT TSI-S16- 1100 -NAT TSI-S14- 1100 -NAT TSI-S12- 1100 -NAT TSI-S10- 1100 -NAT TSI-S08- 1100 -NAT TSI-S07- 1100 -NAT TSI-S06- 1100 -NAT TSI-S05- 1100 -NAT TSI-S04- 1100 -NAT AWG SIZE 24 22 20


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PDF SPC--F005 SPC--F005 TA--381 UL-224 vw-1 TSI-S18-1100-NAT AMS-3653 Ta381 MIL-l-22129
jc 216 sc

Abstract: No abstract text available
Text: 10 CIRCUIT tt 2 RIBS U 0C A TI0N V A R IE S DEPENDING ON CKT. SIZES. I A S S E M B L Y P /N P A C K E D IN T U B E (W/O K A P T O N ) 5 | 4 A S S E M B L Y P /N P A C K E D IN T & R (WITH K A P T O N ) C KT S IZ E VOID PIN L O C A TIO N 3 2 DIMENSION A 6.65 8.65 10.65 12.65 , 10.00 8.00 8.00 4.00 6.00 C 5.00 7.00 9.00 11.00 13.00 5.00 7.00 9.00 11.00 13.00 11.00 11.00 7.00 9.00 , 2.16 1.70 3.18 2.16 1 PLATIN G OPTION 1 1 1 1 A S S E M B L Y P /N P A C K E D IN T U B E (W ITH


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PDF SD-87833-011 jc 216 sc
2013 - Not Available

Abstract: No abstract text available
Text: A A A B B B B C Note: May use at higher voltage line (265V, 300V.) with the same or less Rated Current PACKAGE " A " 2 SCHEMATICS Physical Dimensions in inches (mm) 4 L1B L1A 2 , 1 4 L1 A 3 1.370 (35.0 0) MAX PACKAGE "C" L1 B 1 POLYESTER TAPE 3 1.1 50 , SP A C ER .200 (5 .0 8) P IN # 1 .8 00 (20 .3 2) .6 00 (15.24) Specifications , ) X ( 0.01) 1.100 1.100 1.155 1.100 1.050 1.155 1.100 1.100 1.125 1.100 1.155 1.200


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PDF -40OC PM-OM01 PM-OM02 PM-OM03 PM-OM04 PM-OM05 PM-OM06 PM-OM07 PM-OM13 130KHz
Transistor Vb

Abstract: No abstract text available
Text: , tr = 300 |is. R on = param eter VB G ; condition lL = 2 A April 1995 573 Rev 1.100 , protected power switch based on MOSFET technology in a 5 pin plastic envelope, configured as a single high , resistance MIN. 9 MAX. 50 20 150 38 UNIT A UNIT V A C m ii APPLICATIONS General controller for driving , FUNCTIONAL BLOCK DIAGRAM BATT STATUS KINPUT CONTROL & PROTECTION CIRCUITS h A POWER MOSFET · · · · · · , 568 Rev 1.100 Philips Semiconductors Product specification PowerMOS transistor TOPFET


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PDF BUK202-50Y Transistor Vb
2014 - 8.5K

Abstract: No abstract text available
Text: ceramic case- stand offs optional PW Axial Series  · 0.10Ω to 30KΩ to 30KΩ  · 2 watts to 25 watts  ·  ±10% or  ±5% tolerance to 25 watts Series PW  · TC’s from 300 ppm/°C to +5500 ppm/°C ⠀¢ 0.10Ω or  ±5% tolerance to 30KΩ  · 2 watts free, RoHS compliant construction available â , ppm/°C ⠀¢  ±10% or  ±5% tolerance ee, RoHS •compliant construction available TC’s from 300 , encapsulant clamped termination Automatically clampedlead assembly termination lead assembly â


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PDF
1N225

Abstract: 1N226 LL4689 1N229 1N229A 1N227 1N227A 1N228 Zener Diode 4711 1N225A
Text: DOUBLE ENDED ZENER DIODES, C1 CAN 400mW JEDEC Part Number Minimum Zener Voltage  « Nominal , 1N225A 1N226A 1N227A 1N228A 1N229A 7.50 9.00 11.00 13.50 17.00 8.75 10.50 12.75 15.75 19.00 8.31 9.48 12.20 15.00 18.10 8.75 10.50 12.75 15.75 19.00 7.50 9.00 11.00 13.50 17.00 6.8 8.2 10.0 12.0 15.0 , :; Regulation lij IS!;! j :=: à ­:!j! Current Number Vj (Volts) li, (uA) à ®ia^jfVâtiï:): v„ (Volts) U(uA) (mA) LL4678 1.8 0.70 1.0 7.5 120.0 LL4S79 2.0 0.70 1.0 5.0 110.0 LUSSO 2.2 0.70 1.0 4.0 100.0


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PDF 400mW 1N225 1N226 1N227 1N228 1N229 1N225A 1N226A 1N227A 1N228A LL4689 1N229 1N229A Zener Diode 4711
OTOMAX

Abstract: transistor 1020
Text: 1020 Frequency (MHz) 1100 O u tp u t Power a t P ld B 30 · Absolute Maximum Ratings Maximum , 940 1020 Frequency (MHz) 1100 A ll rights reserved. MicroWave Technology, Inc. A ll , 1100 Frequency (MHz) O u tlin e D ia g ra m s J.45.MAX U. .0 5 0T Y P . L E A D ; . . , Mount Package The MPS093Q11 is a modular amplifier designed to meet the uitrallnear transmitter output requirements for many of the commercially available wireless systems. The amplifier is a class A


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PDF MPS-093011-82 MPS093Q11 45dBm) D50TYP. OTOMAX transistor 1020
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