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LH21256-10 datasheet (2)

Part Manufacturer Description Type PDF
LH21256-10 Sharp DRAM Original PDF
LH21256-10 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

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LH21256-12

Abstract: LH21258-15 LH21257-12 LH21256 AE12A lh21257
Text: S only refresh tim e LH21256/7/8-12 LH21256/7/8-15 LH21256-10 ICC3 - - - mA A ve , %, T a = 0 to +70°C) PARAMETER Page mode cycle time CAS precharge time SYMBOL tPC tCP LH21256-10 , - 7 Nibble mode .8 Byte mode Example: LH21256-10 (NMOS 256K (256K x 1) Dynamic RAM, 100 ns, 16 , operation (LH21258) Power supply: +5 V ± 10 % Power consumption: Operating: 440/440/385 mW (MAX.) Standby , ccC 1· 2 3 4 5 6 7 8 - S 16 Vgs 15 CAS 14 Dour 13 Ae 12 a 3 11 A4 10 A. J 9 A7


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PDF LH21256/7/8 LH21256) LH21257) LH21258) 16-pin, 300-mil 325-mil LH21256/7/8 LH21256-12 LH21258-15 LH21257-12 LH21256 AE12A lh21257
LH21256-12

Abstract: 21256-12
Text: standby mode LH21256-10 Average supply current in RAS only refresh time | LH21256-12 LH 21256-15 Average , current Output `High' voltage Output 'Low' voltage NOTES: LH21256-10 LH21256-12 LH21256-15 I 0 V < V , (Vcc = 5 V ± 10 %, Ta = 0 to 70°C) LH21256-10 PARAM ETER SYMBOL M IN . R a n d o m r e a d /w r ite c , CHARACTERISTICS (Vcc = 5 V ± 10 %, TA = 0 to +70°C) PARAMETER SYMBOL LH21256-10 MIN. MAX. - - LH21256-12 MIN , (256K x 1) Dynamic RAM Example: LH21256-10 (NMOS 256K (256K x 1) Dynamic RAM, 100 ns, 16-pin, 300


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PDF LH21256 16-pin, 300-mil 325-mil LH21256 LH21256-12 21256-12
1995 - LH21256-12

Abstract: lh21256 LH21256-10 LH21256-15 21256-8 dynamic ram nmos ZIP016-P-0325
Text: -15 CAS before RAS average supply current in refresh cycle LH21256-10 LH21256-12 ICC5 LH21256 , 1, 2 55 LH21256-10 60 LH21256-15 mA 65 - ICC3 5.0 LH21256-10 LH21256-12 NOTE 70 ICC2 UNIT 85 80 ICC1 LH21256-15 Average supply current in standby mode MAX. LH21256-10 LH21256-12 MIN. 55 Input , , 3 (VCC = 5 V ± 10 %, TA = 0 to 70°C) PARAMETER SYMBOL LH21256-10 LH21256-12 LH21256


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PDF LH21256 LH21256 16-pin 16ZIP 16-pin, 325-mil LH21256-12 LH21256-10 LH21256-15 21256-8 dynamic ram nmos ZIP016-P-0325
KM41256-15

Abstract: KM41256-12 LH21256-15 LH21256-12 HM50257P-15 HM50257-20 HM50257 lh21256 LH21256-10 HY53C256-80
Text: 2.4 10 0.4/4. 2 2. 4/5 7 256/4 NIBBLE MODE LH21256-10 SHARP 0-70 100 200 20 25 90 200 35 240 4.5—5 , 2.4 5 0. 4/4. 2 2. 5/5 7 256/4 HY53C256- 10 HYUNDAI 0—70 100 175 25 20 85 175 20 210 4. 5-5. 5 50 3 , 145 15 175 4. 5—5.5 60 3/2 0.8 2.4 4* 0.4/4. 2 Z. 4/5 4* 256/4 HY53C256L- 10 HYUNDAI 0—70 100 175 , -80 HYUNDAI 0-70 80 145 25 15 55 145 15 175 4.5—5. 5 60 2/1 0.8 2.4 4» 0.4/4.2 2.4/5 4* 256/4 KM41256- 10 SAM 0—70 100 200 20 15 90 200 35 246 4.5—5. 5 85 4. 5/- 0.8 2.4 10 0. 4/4. 2 2. 4/5 7 256/4


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PDF 262I44X1) IJ71-Cyc/ms HM50256ZP-12 1W50256ZP-15 HM50256ZP-Z0 LH21256-12 LH21256-15 LH21256-20 LH21257-10 LH21257-12 KM41256-15 KM41256-12 HM50257P-15 HM50257-20 HM50257 lh21256 LH21256-10 HY53C256-80
LH64400CK-70

Abstract: lh61664 LH62800K-60 LH61664N LH62800 LH64400 20DIP LH64400CK-60 lh64260 LH61664 K-70
Text: ) MAX. 85/5 80/5 70/5 85/1 5 ± 10 % 256k x 4 1M Fast pag e m ode O p e ra tio n m ode P ackage LH21256/Z- 10 256k 256k x 1 LH21256/Z-12 LH21256/Z-15 LH64256BD/BK/BZ-70 LH64256BD/BK/BZ-80 LH6V4256D/K/T A- 10 LH61664N*/K/S*-70 5 ± 10 % Page mode 16DIP/16ZIP 70/1 35/0.15 130/1 5 ± 10 % Fast page m ode 20DIP/26SOJ/ 20ZIP 20DIP/26SOJ/ 28TSOP(l) Forward bend 3.3 ± 10 % Fast page m ode , 5 ± 10 % Fast pag e m ode 26SOJ LH64400CK-70 LH64405K-70 LH64260K/S-70 95/1 95/1 160/1 160/1


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PDF LH21256 256kx4 LH64256B LH61664 256kx8 LH62800 LH64400C LH64405 LH64260 LH6S4260 LH64400CK-70 lh61664 LH62800K-60 LH61664N LH62800 LH64400 20DIP LH64400CK-60 lh64260 LH61664 K-70
LH64256BK70

Abstract: Lh64256bk-70
Text: ) Modal No. LH5P832/D/N- 10 t Supply.currant AOOMtttM# Cyetotime operating/standby (na)MAX. 100 120 , 160 110 125 140 Supply voltage M 5 ± 10 % (mA) MAX. 65/3 Control signal« Package 28DIP , UOE, LOE, CE LH5P832/D/N-12 LH5P860/N-80 64k x 8 55/3 80/1 80/0.5 85/3 5 ± 10 % 65/3 104/0.2 70/0.2 60/0.2 104/0.2 70/0.2 50/0.2 75/ 1.0 67/ 1.0 60/ 1.0 5 ± 10 % ÔË, CE 5 ± 10 % ÔË, CË, CS 5 ± 10 % OË^ CËi, CE2 5 ± 10 % 5 ± 10 % LH5P864N-80 512k LH5P1632/N-80 32k x16 LH5P1632/N-15 LH5P8128/N/T


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PDF LH5P832/D/N-10 28DIP/ 28SK-DIP/ 28SOP 32DIP/32SOP 32SOP 40DIP/40SOP LH5P832/D/N-12 LH5P860/N-80 LH5P864N-80 LH64256BK70 Lh64256bk-70
256k x 4

Abstract: No abstract text available
Text: No file text available


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PDF LH5P832 LH5P860 LH5P864 LH5P1632 LH5P8128 LH5P8129 LH5P8512 LH21256 LH64256B 256k x 4
TMS44C256

Abstract: HY6116 CROSS REFERENCE ZMD cross reference soj28 sop28 HM65664A sram mcm6264 SIMTEK cross reference HM50464 oki cross 600mil
Text: <30 µA <5 µA <100 µA < 10 µA <1 µA PDIP24 (0.6) SOP24 (0.3) PDIP28 (0.6) SOP28 (0.33) SOP28 , <8 mA < 10 mA <500 µA SOP28 (0.3) <2 mA U62H824 MCM56824 U62H256 Motorola MCM6264


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PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE ZMD cross reference soj28 sop28 HM65664A sram mcm6264 SIMTEK cross reference HM50464 oki cross 600mil
lh57257

Abstract: IR2E31 IR2E01 IR2E24 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 LH8530A
Text: 3.5 3.5 3.5 3.5 2.4 3.5 3.5 3.4 3.5 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 10 ,11 13 13 13 13 13 13 13 13 13 13 13 13 13 68 LH5763


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PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 LH8530A
2002 - mt3514

Abstract: mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB , 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / WOB B40C1000 B80C1000 B125C1000 B250C1000 B380C1000 B500C1000 100 200 300 600 900 1200 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


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PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 zener+diode+phc+10 B500C1000 b40c3700 diode+skn+50/10 GBU4K KBJ15J KBP208
2003 - GFM 64A

Abstract: GDV 64A GFM 85A 625 GFG 79mcc GHR 26A tvs SMC MARKING 33 TVS SMC GFM 57, TVS GFM 15A
Text: 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 , 37 38 34 35 32 33 29 30 27 28 25 26 23 24 21 22 18 19 17 18 15 16 14 14.5 12.5 13 11.5 12 10 11 9.0 , 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 1.0 1.0 1.0


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PDF DO-41 P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 GFM 64A GDV 64A GFM 85A 625 GFG 79mcc GHR 26A tvs SMC MARKING 33 TVS SMC GFM 57, TVS GFM 15A
2003 - mb101

Abstract: No abstract text available
Text: DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 , 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.0 1.0 1.0 1.3 1.7 1.7 1.7 1.0 1.0


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PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101
2011 - Not Available

Abstract: No abstract text available
Text: -8 RG1676-9 RG1676- 10 RG1676-11 RG1676-12 RG1676-13 RG1676-14 RG1676-15 RG1676-16 RG1676-17 RG1676 , ® RESISTANCE TOLERANCE OHMS % 100 100 10 220 220 100 100 100 220 220 220 220 220 220 220 220 100 220 220 100 10 220 220 220 220 47 47 47 200 100 22 100 50 220 220 220 100 50 50 15 33 15 47 100 220 10 220 100 100 470 220 22 75 47 10 50 100 220 220 220 68 220 50 220 10 820 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10


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PDF RG1676 RG1676 RG1676-1 RG1676-2 RG1676-3 RG1676-4 RG1676-5 RG1676-6 RG1676-7 RG1676-8
2000 - SR1K-2

Abstract: SR1K2 capacitor K460 SR2S14 Z5U Metal Oxide Varistor 155Z sr2k20
Text: CECC 42 000 203 10 /00 SIOV Metal Oxide Varistors HICAP Maximum ratings (TA = 85 °C) Type , 23/­ 0 + 23/­ 0 + 23/­ 0 Max. clamping voltage v i V A 40 5,0 40 10 ,0 40 5,0 40 5,0 40 10 ,0 40 10 ,0 40 10 ,0 58 58 58 58 58 58 58 5,0 10 ,0 5,0 5,0 5,0 10 ,0 10 ,0 C ± 20% Derating V /I , 275 274 274 274 275 275 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 New ordering codes implemented (refer to chapter Varistor Type Cross-Reference List) 1) at 0,5 V 204 10 /00 SIOV Metal Oxide


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2010 - CL10B105KA8NNN

Abstract: CL31A106KOHNNN CL05B224KQ5NNN
Text: 1.25±0.10 2.00±0.15 2.00±0.20 1.25±0.15 1.25±0.20 5 5 8 C F Q 0.2+0.15/-0.1 10 , High Capacitance Table (X5R) Capacitance (uF) Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 47 , ) 6.3 0402(1005) 0.3 1 2.2 4.7 10 22 33 47 X6S 10 Part Numbering


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PDF CL31F226ZPHNNN CL31F226ZQHNNN CL32F106ZAHLNN CL32F106ZOELNN CL32F226ZPJNNN CL32F226ZPULNN CL32F476ZQJNNN CL32F107ZQJNNN CL10B105KA8NNN CL31A106KOHNNN CL05B224KQ5NNN
2005 - SMAJ15CA

Abstract: SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C
Text: with a 10 /1000µs waveform * Optimized for LAN protection applications * Low clamping * Very fast , 150 °C Peak Pulse Current on 10 /1000µs waveform (Note 1, Fig. 1) Operating Junction and , . IT (mA) VWM (V) Maximum Reverse Leakage @ VWM IR (µA) SMAJ5.0C 6.40 7.82 10 5.0 1600 41.7 SMAJ5.0CA 6.40 7.25 10 5.0 1600 43.5 9.2 SMAJ6.0C 6.67 8.15 10 6.0 1600 35.1 11.4 SMAJ6.0CA 6.67 7.37 10 6.0 1600


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PDF 188CA DO-214AC) UL94V-O SMAJ78CA SMAJ85A SMAJ188CA SMAJ15CA SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C
2005 - SMCJ10C

Abstract: SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C
Text: * * * * * 0.305(7.75) 0.030(0.76) * 1500W peak pulse power capability with a 10 /1000µs waveform , unless otherwise specified. Rating Symbol Peak Pulse Power Dissipation on 10 /1000ms waveform Peak Pulse Current on 10 /1000µs waveform (1) (2) (1) Typical thermal resistance , Junction to , (V) Maximum Reverse Leakage @ VWM IR (µA) SMCJ5.0C 6.40 7.82 10 5.0 2000 156.3 SMCJ5.0CA 6.40 7.25 10 5.0 2000 163.0 9.2 SMCJ6.0C 6.67 8.15


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PDF 188CA DO-214AB) UL94V-O SMCJ10C SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C
TO-32-070

Abstract: 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
Text: 50 50 50 50 50 50 50 50 50 Vebo (V) 10 10 10 10 10 10 6 6 10 10 10 10 5 6 5 5 10 6 6 6 6 5 5 5 5 6 6 6 10 10 10 10 5 6 (mA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 500 , 250 250 250 250 250 250 200 250 200 250 200 250 200 250 Vce (V) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 0 10 1 0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Ic te (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5


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PDF T0220ML TO-32-070 2SA1678 FC102 2SK1413 Application Notes FC124 2SC3383 2sC4106 application notes 2sk283 2sd313 2SA1416
2004 - BCR141

Abstract: BCR141F BCR141L3 BCR141S BCR141T
Text: 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 Collector current , = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off , Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz , 10 2 10 3 - 10 2 IC h FE mA 10 1 10 1 10 0 -1 10 10 0 10 1


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PDF BCR141. BCR141/F/L3 BCR141T/W BCR141S/U EHA07184 EHA07174 BCR141 BCR141F BCR141L3 BCR141S BCR141 BCR141F BCR141L3 BCR141S BCR141T
1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 1N34A 1N46 IN73 1N120
Text: 75 125 50 55 25 70 23 23 90 100 75 60 75 75 75 100 90 100 100 100 100 100 125 20 25 10 1,0 1.0 1.0 1.0 1.0 5 5 7.5 4 3 50 30 10 100 6 10 10 10 25 3 1.0 1.0 1.5 1.5 1.0 5 25 12.7 12.8 3 5 6 35 1000 3 3 10 iö 1.0 1.0 1.0 1.0 1.0 410 1500 500 800 200 50 50 100 50 20 1.0 1.0 1.0 1.0 1.0 5 2.5 5 25 5 80 1500 150 100 10 20 50 50 50 10 1.0 1.0 1.0 1.0 1.0 5 5 4 5 15 7 800 500 500 300 10 iso 150 150 30 1.0 l.Q 1.0 1.0 1.0 15 3.6 4 5 5 300 300 500 800 600 30 75 75 100


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PDF 1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 1N34A 1N46 IN73 1N120
SMBJ15A

Abstract: SMBJ120A SMBJ28A SMBJ12A SMBJ6.5A SMBJ64A SMBJ100A SMBJ58A SMBJ17A SMBJ170A
Text: Power : 600 W FEATURES : * 600W peak pulse power capability with a 10 /1000µs waveform * Excellent , Peak Pulse Power Dissipation on 10 /1000μs waveform Peak Pulse Current on 10 /1000μs waveform (1 , 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 , 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 62.5 65.2


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PDF TH97/2478 TH09/2479 TH07/1033 DO-214AA) UL94V-0 10/1000ms. SMBJ15A SMBJ120A SMBJ28A SMBJ12A SMBJ6.5A SMBJ64A SMBJ100A SMBJ58A SMBJ17A SMBJ170A
2003 - BAS170W

Abstract: BAS70-04S marking 74s BAS70-02W BAS70-02L BAS70 BAS70-04T Puls BAS70-05 BAS70-05W
Text: - 0.1 µA DC Characteristics Breakdown voltage V(BR) I(BR) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA , rf - 34 - - - 100 ps Forward voltage matching1) VF IF = 10 mA AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz , = f = 10 kHz BAS 70W/BAS 170W 2.0 CT f = 1MHz (VR) EHB00044 pF (IF


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PDF BAS70. BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W BAS70-04S BAS170W BAS70-04S marking 74s BAS70-02W BAS70-02L BAS70 BAS70-04T Puls BAS70-05 BAS70-05W
2003 - Not Available

Abstract: No abstract text available
Text: ) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA 600 705 750 IF = 15 mA 750 880 1000 - - 20 , )  IF = 10 mA VF AC Characteristics Diode capacitance pF VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz Charge carrier life time  IF = 25 mA 1 rr VF is the , . / BAS170W Forward resistance rf = f = 10 kHz BAS 70W/BAS 170W 2.0 CT  f = 1MHz (VR


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PDF BAS70. BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W BAS70-04S
2006 - BGY 602

Abstract: BD 882 KD 605 447 gev BD 147 SMCJ12 SMCJ11A SMCJ11 BD 292 SMCJ10A
Text: capability with a 10 /1000us waveform, repetition rate (duty cycle): 0.01% Very fast response time High temperature soldering guaranteed: 250oC/ 10 seconds at terminals Mechanical Data Case: JEDEC DO-214AB(SMC , unless otherwise specified.) Parameter Symbol Peak pulse current with a 10 /1000us waveform (1) Unit P PPM Peak pulse power dissipation with a 10 /1000us waveform (1) (2) Value Minimum 1500 , . Max. Test current at IT (mA) SMCJ5.0 GDD BD D 6.40 7.82 10 5.0 1000


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PDF 440CA 10/1000us 250oC/10 DO-214AB MIL-STD-750, SMCJ300A SMCJ350A SMCJ400A SMCJ440A 300us BGY 602 BD 882 KD 605 447 gev BD 147 SMCJ12 SMCJ11A SMCJ11 BD 292 SMCJ10A
2012 - CL21B105K

Abstract: CL05A105K CL21B475K CL05A225 CL32B106K CL21B225K CL32A227MQVNNN CL32B226KAJ CL32A476KOJNNN CL10A476MR8NZN
Text: Size Code 05 10 EIA Code 0402 0603 L 1.00±0.05 1.60±0.10 1.60±0.10 2.00±0.10 2.00±0.10 2.00±0.10 , . High Capacitance Table (X5R) Capacitance () Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 15 47 100 220 High Capacitance Table_Low Profile (X5R) Size(mm) Tmax (mm) Capacitance () Vr(V) 6.3 0402(1005) 0.3 10 16 6.3 10 0603(1608) 0.5 16 25 10 0.7 16 25 0805(2012) 4 6.3 0.95


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