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OPA452FA/500G3 OPA452FA/500G3 ECAD Model Texas Instruments 80V, 50mA Operational Amplifiers 7-DDPAK/TO-263 -40 to 125
OPA544F/500G3 OPA544F/500G3 ECAD Model Texas Instruments High-Voltage, High-Current Operational Amplifier 5-DDPAK/TO-263
OPA551FA/500G3 OPA551FA/500G3 ECAD Model Texas Instruments High-Voltage, High-Current Operational Amplifiers 7-DDPAK/TO-263 -40 to 125
REG103FA-5/500G3 REG103FA-5/500G3 ECAD Model Texas Instruments 500mA, Low-Noise, Low Dropout Regulator 5-DDPAK/TO-263 -40 to 85
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8T134-600E

Abstract: BT136-6000 BTI39X-600E BT134-6000 BT1388-800E TC2-63 LG 500G 8T148W-400R BT137S600E Philips Semiconductors Selection Guide
Text: Mount Packages I It(H M S ) Vdrm lG T(max) Quadrant: (i)>(H), (HO mA 5 to 25 35 50 5 (Iv) mA 10 25 70 70 , -800 BT134W- 500G BT134W-600G BT134W-800G BT136M-500D BT136M-600D BT136S-500D BT136S-600D BT136M-500E BT136M , -600F BT136S-800F BT136M-500 BT136M-600 BT136M-800 BT136S-500 BT136S-600 BT136S-800 BT136M- 500G BT136M-600G BT136M-800G BT136S- 500G BT136S-600G BT136S-800G BT136B-500D BT136B-600D 4 10 4 10 25 , 70 BT136B-500 BT136B-600 BT136B-800 4 50 100 BT136B- 500G BT136B-600G BT136B


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PDF BRI00/Ö OT223 OT428 T0252) BT168BW BT168DW BT168EW BT168GW BT169BW BT169DW 8T134-600E BT136-6000 BTI39X-600E BT134-6000 BT1388-800E TC2-63 LG 500G 8T148W-400R BT137S600E Philips Semiconductors Selection Guide
lg 500g

Abstract: No abstract text available
Text: peak on-state current MAX. 500 500F 500G 500 4 MAX. 600 600F 600G 600 4 MAX. UNIT 800 800F 800G , °C full sine wave; Tj = 25 °C prior to surge t = 20 ms t = 16.7 ms t = 10 ms Itm = 6 A; lG = 0.2 A , ; lG T = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD = 12 V; lG T = 0.1 A lT = 5 A VD = 12 V; lT = 0.1 A VD = 400 , open circuit lT M = 6 A; VD = VD R M /m axj; lG = 0.1 A; dlG /dt = 5 A/^s 100 MIN. .F 50 .G 200 TYP , VT / V Fig. 7. Normalised gate trigger current lG T (Tj)/ lG T (25°C), versus junction temperature


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PDF BT136S BT136M BT136S lg 500g
Not Available

Abstract: No abstract text available
Text: peak on-state current 500 500F 500G 500 600 600F 600G 600 It s m PIN CONFIGURATION , . BT138XVD= 12 V; lT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ VD= 12 V; lG = 0.1 A T T2+ G+ T2+ GT2- GT2- G+ VD= 12 V; lG = 0.1 A T < II o > U February 1996 of e wf Off-state leakage , ; V D = lG = 0.1 A; dlG = 5 A/ps /dt 158 Rev 1.100 Philips Semiconductors Product


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PDF BT138X -SOT186A BT138XBT138XBT138XRepetitive
Not Available

Abstract: No abstract text available
Text: voltages RMS on-state current Non-repetitive peak on-state current 500 500F 500G 500 600 600F , (A ) Ts lg T, l2 for fusing t Repetitive rate of rise of on-state current after triggering , i = 12 A; dlco /dt = 5.4 A/ms; gate m open circuit I t M = 1 1> A ; VD= VDRM lG = 0.1 A


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PDF BT138F PINNING-SOT186 BT138FBT138FBT138FRepetitive 80rsus
Not Available

Abstract: No abstract text available
Text: . BT137FBT137FBT137F- SY M B O L 500 500F 500G 600 600F 600G 80 0 800F 800G Repetitive peak , t dlT /dt Iqm vG M P gm P G (A V ) Ts lg T, l2 for fusing t Repetitive rate of , Off-state leakage current February 1996 VD= 12 V; lT = 0.1 A T2+ G+ T2+ GT2-GT2- G+ VD= 12 V; lG =


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PDF BT137F PINNING-SOT186 BT137FBT137FBT137F-
Not Available

Abstract: No abstract text available
Text: peak on-state current 500 500F 500G 500 600 600F 600G 600 800 800F 800G 800 V , - G+ VD= 12 V; lG = 0.1 A T T2+ G+ T2+ GT2-GT2-G+ VD= 12 V; lG = 0.1 A T lT= 10 A VD= 12 V; lT


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PDF BT137X PINNING-SOT186A BT137XBT137XBT137XRepetitive
Not Available

Abstract: No abstract text available
Text: 500G 600G 800G 500 600 800 V 4 25 4 25 4 25 A A -500 MAX. -600 -800 , t = 16.7 ms t = 10 ms Ith = 6 A; lG = 0.2 A; dlG = 0.2 A/ps /dt T2+ G+ T2+ GT2- GT2- G+ - , + VD= 12 V; lG = 0.1 A T lT = 5 A VD= 12 V; 1 = 0.1 A T VD= 400 V; lT = 0.1 A; T = 125 ‘C *D = , . Normalised gate trigger current lG J(T)/ tG (25'C), versus junction temperature Tr T February 1996


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PDF BT136F BT136FBT136FBT136F-
triac bt138x

Abstract: No abstract text available
Text: Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 800 600 500F 600F 800F 500G 600G 800G 800 600 500 12 , *C prior to surge t = 20 ms t= 16.7 ms t= 10 ms lT M= 20 A; lG = 0.2 A; dlo/dt = 0.2 A/fis T2+G+ T2 , = 16 A; V0 = VonM ftTM ,); lG = 0.1 A; dlo/dt = 5 M is . 100 MIN. .F 50 TYP. .G 200 250 MAX , 1.5 V T /V 2 2.5 3 Fig. 7. Normalised gate trigger current iG J(T)/ lG T (25*C)t versus


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PDF BT138X BT138XBT138XBT138XRepetitive OT186A BT13S triac bt138x
Not Available

Abstract: No abstract text available
Text: peak on-state current MAX. MAX. UNIT 500 500F 500G 600 600F 600G 800 800F 800G , to surge t = 20 ms t = 16.7 ms t = 10 ms It m = 12 A; lG = 0.2 A; d lG /dt = 0.2 A/jis T2+ G , A; V D = V DRM aX tm (m ); lG = 0.1 A; d lG /dt = 5 A/ps 2 MAX. UNIT .F 100 .G


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PDF BT137S BT137M OT428 BT137S
GT101-30S-H16

Abstract: kn10g-30s-1h lb104v03 LB104V03-A1 FI-X30M lg lb104v03 lg-philips lb104v03 cables lb104v03 GT101 lg backlight inverter
Text: signature and comments. Ver. 1.1 Oct. 10, 2003 Products Engineering Dept. LG . Philips LCD Co., Ltd , First Draft (Preliminary) 0.2 Jul. 22. 2003 4 weight 480g à 500g (Max) 13 Changing Color coordinates 17 weight 480g à 500g 18 Changing Mechanical drawing 19 Changing Mechanical drawing 20 Half sine wave, 100G à120G, 6ms à2ms 4 weight 500g à 490g(Max) 6 , > Hirose, LG Cable or equivalent 13 insert Min value of Surface Luminance, white (320) 17 weight


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PDF LB104V03 LB104 GT101-30S-H16 kn10g-30s-1h lb104v03 LB104V03-A1 FI-X30M lg lb104v03 lg-philips lb104v03 cables lb104v03 GT101 lg backlight inverter
BT137S

Abstract: No abstract text available
Text: peak on-state current MAX. MAX. MAX. UNIT 800 500 600 500F 600F 800F 500G 600G 800G 600 800 500 8 65 8 , -(orBT137M) VD= 12 V; iT = 0.1 A T2+G+ T2+GT2- GT2- G+ VD= 12 V; lG T= 0.1 A T2+G+ T2+GT2- GT2- G+ VD= 12 V , A; dlcor/dt = 3.6 A/ms; gate open circuit Itm = 12 A; V0 = VD R M (m a x ); lG = 0.1 A; dlG /dt = 5 A


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PDF BT137S BT137S BT137M BT137M) OT428:
Not Available

Abstract: No abstract text available
Text: 800F 500G 600G 800G 600 800 500 1 10 1 10 1 10 VqrM ^ T S M V A A PINNING - SOT223 PIN 1 2 3 , ms t= 16.7 ms t= 10 ms lT M= 1.5 A; lG = 0.2 A; dle/dt = 0.2 A/flS T2+ G+ T2+GT2- GT2- G+ - MAX , = 12 V; lG T= 0.1 A T2+G+ T2+GT2-GT2-G+ VD= 12 V; lQ T= 0.1 A lT= 2 A VD= 12 V; lT = 0.1 A VD= 400 V


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PDF BT134W BT134WBT134WBT134WRepetitive OT223 OT223.
Not Available

Abstract: No abstract text available
Text: S00F 600F 800F 500G 600G 800G 500 4 25 600 4 25 800 4 25 Repetitive peak off-state voltages R M S , Fig. 7. Normalised gate trigger current lG T (Tj)/ lG T (25'C), versus junction temperature 7 ~ .


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PDF BT136X BT136XBT136XBT136XVdR -SOT186A
BT137F-500

Abstract: 264HS 600G 800G BT137 BT137F tag semiconductors triacs
Text: 600F 800F BT137F- 500G 600G 800G Repetitive peak off-state 500 600 800 V voltages 8 8 RMS , t = 16.7 ms t = 10 ms lTM = 12 A; lG =0.2 A; dl3/dt = 0.2 A/lis T2+G+ T2+G-T2-G-T2-G+ over any 20 ms , controlled turn-on 'TM = 12 A; VD = VDRM(max); lG = 0.1 A; dlQ/dt = 5 A/jis - - - 2 - US time


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PDF BT137F BT137F- OT186 01D14SE OT186; 711002b Q101453 BT137F-500 264HS 600G 800G BT137 tag semiconductors triacs
Not Available

Abstract: No abstract text available
Text: 125°C V T(TO) 125°C 125°C rT = Tj = 25°C, lT = 50A, V D - 300V, lG - 1A, dl/dt Tj T = = ^(ON)TOT 50A/|iS, d lG /dt = 1A/jas = 3.0* 100* 300* - |iS 'h 25°C,' lTU = 1A, V TM ' D 12V mA mA |iS 'l = 25°C, lG = 0.5A, V D = 12V Turn-off time Tj , stated otherwise. DO NOT SCALE. 2 holes 0 3 .6 x 2.1 approx (one in each electrode) Weight: 500g


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PDF DS4279 TF915. 0000A
Not Available

Abstract: No abstract text available
Text: REFERENCE DATA SYMBOL PARAMETER BT137XBT137XBTI37XV[>RM It (RMS) It s m MAX. 500 500F 500G MAX. 600 , surge t = 20 ms t = 16.7 ms t= 10 ms lTM= 12 A; lG = 0.2 A; dlo/dt = 0.2 A/jis T2+G+ T2+ GT2- GT2- G , circuit 'tm = 12 A; VD = Voçyjj,; lG = 0.1 A; dlQ /dt = 5 A/ns 50 200 250 dVco m /dt 10


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PDF BT137X BT137XBT137XBTI37XV[ OT186A
Not Available

Abstract: No abstract text available
Text: 125°C V T(TO) 125°C 125°C rT = Tj = 25°C, lT = 50A, V D - 300V, lG - 1A, dl/dt Tj T = = ^(ON)TOT 50A/|iS, d lG /dt = 1A/jas = 2* 100* 300* - |iS 'h 25°C,' lTU = 1A, V TM ' D 12V mA mA |iS 'l = 25°C, lG = 0.5A, V D = 12V Turn-off time Tj = , (one in each electrode) Weight: 500g © MITEL Internet: http://www.gpsemi.com POWER PRODUCT


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PDF DS4278 TF913. 7000A TF913 F91318C F91316C MU169.
Not Available

Abstract: No abstract text available
Text: 5/8 DCR1020SF Gate trigger current, lG T - (A) Fig. 7 Gate characteristics - Upper , *% *. '" - - - - . . * / 0 1 2 3 4 5 6 7 Gate trigger current, lG T - , (in both electrodes) Weight: 500g @ M ITEL S E M IC O N D U C T O R HEADQUARTERS OPERATIONS


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PDF DCR1020SF DS4245 0700A 020SF65 020SF64 020SF63 020SF62 020SF61 020SF60
Not Available

Abstract: No abstract text available
Text: peak on-state current MAX. MAX. MAX. UNIT 500 600 800 500F 600F 800F 500G 600G 800G 800 500 600 4 4 4 , wave; é 107 'C full sine wave; Tj = 25 'C prior to surge t = 20 ms t = 16.7 ms t = 10 ms lT M= 6 A; lG


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PDF BT136S BT136M BT136S
DL 711 PHILIPS

Abstract: philips dl 711 600G 800G BT136F TRIAC TAG J 7DFL Triac 40 A
Text: BT136F- 500G 600G 800G VDRM Repetitive peak off-state 500 600 800 V voltages 'T(RMS) RMS , Repetitive rate of rise of I™ = 6 A; lG = 0.2 A; on-state current after dlQ/dt = 0.2 A/lls


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PDF BT136F BT136F- OT186 OT186; 711Dfl2b DL 711 PHILIPS philips dl 711 600G 800G TRIAC TAG J 7DFL Triac 40 A
g1d1

Abstract: 600G 800G BT139F
Text: BT139F- 500G 600G 800G Vdrm Repetitive peak off-state 500 600 800 V voltages 'T(RMS) RMS , turn-on 'TM = 20 A; VD = VDRM(max); lG = 0.1 A; dlG/dt = 5 A/|xs - - - 2 - Us time February 1996


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PDF BT139F BT139F- -SOT186 OT186; 7110a2b g1d1 600G 800G
600G

Abstract: 800G BT139F
Text: BT139F- 500G 600G 800G Repetitive peak off-state 500 600 800 V voltages RMS on-state current 16 , open circuit tg. Gate controlled turn-on 'TM = 20 A; VD = VDRM(max); lG = 0.1 A; dlG/dt = 5 A


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PDF BT139F BT139F- -SOT186 11065b 0101SEL OT186; 7110a2b 600G 800G
Not Available

Abstract: No abstract text available
Text: Tj = 25'C, lT = 50A, VD = 300V, lG = 1A, dl/dt = 50A/|os, d ljid t 3* - US Holding , °C, lG = 0.5A, VD= 12V 300* - mA Turn-off time rT Threshold voltage T = 125 , , unless stated otherwise. DO NOT SCALE. 2 holes 0 3.6 x 2.1 approx (one each electrode) Weight: 500g


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PDF DS4282-3 TFA41. 5000A TFA41 TFA4118L D02T0l4b
Not Available

Abstract: No abstract text available
Text: CURVES 4/8 DCR1003SF 5/8 DCR1003SF Gate trigger current lG T - (A) Fig.4 Gate , SCALE. 2 holes 0 3.6x2.0 deep (in both electrodes) Weight: 500g @ M ITEL S E M IC O N D U C T O R


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PDF DS4645 DCR1003SF 6250A DCR1003SF18 DCR1003SF17 DCR1003SF16 DCR1003SF15 DCR1003SF14 100mA,
DCR1006SF26

Abstract: No abstract text available
Text: Symbol vG T lG T VG D ^FG M Parameter Gate trigger voltage Gate trigger current Gate non-trigger , electrodes) Weight: 500g @ M ITEL S E M IC O N D U C T O R HEADQUARTERS OPERATIONS MITEL


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PDF DCR1006SF DS4644 0500A DCR1006SF28 DCR1006SF27 DCR1006SF26 DCR1006SF25 DCR1006SF24 100mA,
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