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    131191-HMC960LP4E Analog Devices Inc DC - 100 MHz Dual Digital Variable Gain Amplifier SMT with Driver Visit Analog Devices Inc
    131109-HMC960LP4E Analog Devices Inc DC - 100 MHz Dual Digital Variable Gain Amplifier SMT with Driver Visit Analog Devices Inc

    LG 1311 Datasheets Context Search

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    IC Generator to 2MHz square

    Abstract: Function Generator IC sine square triangle IC Generator to 10MHz triangle squarewave generator IC Generator to 10MHz square function generator LG-1311 SWEEP GENERATOR IC sweep generator square pulse generator ic Frequency Generator 10MHz
    Text: Output LG 1311 s Signal Burst Output s Wide Frequency Range, 0.01 Hz to 10 MHz s Sine, Square, Triangle, Ramp and Pulse Output An extremely versatile wide-ranging function generator, the LG 1311 , IC AT IO N S Frequency Range LG 1301 0.002 - 2 MHz, 8 ranges LG 1311 0.01 - 10 MHz, 9 ranges , range Distortion LG 1301 <0.5%, 10 Hz - 20 kHz <1%, 20 kHz - 100 kHz LG 1311 <0.5%, 10 Hz - 50 kHz , 1301 <100 ns into 50 LG 1311 <25 ns into 50 Symmetry 50:50 <1% (10 Hz - 100 kHz) Sawtooth


    Original     		PDF 10-MHz LT-2049 IC Generator to 2MHz square Function Generator IC sine square triangle IC Generator to 10MHz triangle squarewave generator IC Generator to 10MHz square function generator LG-1311 SWEEP GENERATOR IC sweep generator square pulse generator ic Frequency Generator 10MHz
    IC Generator to 2MHz square

    Abstract: squarewave generator sweep generator 2MHz Function generator Function Generator IC sine square triangle IC Generator to 10MHz triangle IC Generator to 10MHz square function generator LG-1311 SWEEP GENERATOR IC LG 1311
    Text: Output LG 1311 s Signal Burst Output s Wide Frequency Range, 0.01 Hz to 10 MHz s Sine, Square, Triangle, Ramp and Pulse Output An extremely versatile wide-ranging function generator, the LG 1311 , , 8 ranges LG 1311 0.01 - 10 MHz, 9 ranges Accuracy Within ± 5% f.s. below X1 MHz range WAVEFORMS , kHz - 100 kHz LG 1311 <0.5%, 10 Hz - 50 kHz <1%, 50 kHz - 100 kHz Triangle Symmetry 50:50 <1% (10 Hz - 100 kHz) Squarewave Rise Time LG 1301 <100 ns into 50 LG 1311 <25 ns into 50


    Original     		PDF 10-MHz LT-2049 IC Generator to 2MHz square squarewave generator sweep generator 2MHz Function generator Function Generator IC sine square triangle IC Generator to 10MHz triangle IC Generator to 10MHz square function generator LG-1311 SWEEP GENERATOR IC LG 1311
    LBO-310A

    Abstract: LG1311 LF-2350 LT-1607 LS-8105 LCR-745 LF-982 401YB 718-5D NTSC test generator
    Text: single output power supplies feature Model LG -1301/ LG-1311 constant voltage and current modes of , .EACH 395.00 Generator cY/C (SVHS) Output cRGB Output (TTL Level) Model 1311 (10 MHz) cLow Distortion , .EACH 995.00 843-1311. 1311 .EACH


    Original     		PDF 408NPS) 408NPS 401YB. LAG-120B LBO-310A LG1311 LF-2350 LT-1607 LS-8105 LCR-745 LF-982 401YB 718-5D NTSC test generator
    2N6370

    Abstract: MRF-410A RF410A mrf410 vk200.10 MRF410A
    Text: 50 mAdc, lg = 0) Emitter-Base Breakdown Voltage ( lg = 10 mAdc, Ic = 0) Collector Cutoff Current {VcE , CHARACTERISTICS Output Capacitance (Vc b - 28 Vdc, lg = 0, f = 1 MHz) C0b 85 100 PF (continued) Symbol Min , IL-ST0- 1311 V ersion A, Test M ethod 22048, Tw o Tone, Reference each tone, 7^" ' 3 3 ' "// XSTRS/R


    OCR Scan     		PDF b3b75S4 RF410 RF410A 2N6370 MRF410, MRF410A 2N6370 MRF-410A RF410A mrf410 vk200.10 MRF410A
    1N4997

    Abstract: No abstract text available
    Text: Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (lc = 200 mAdc, lg = , Voltage (lc = 100 mAdc, = 0) Emitter-Base Breakdown Voltage ( lg = 10 mAdc, lc = 0) NOTE: 1. Pq is , No Degradation in Output Power NOTE: 2. To Mil- Stct- 1311 Version A, Test Method 2204, Two Tone


    OCR Scan     		PDF MRF448 1N4997
    130001 power transistor

    Abstract: transistor 130001 K1746 pepi c MRF426A MRF426 VK20Q PEPI -CH 2204B 725M
    Text: , lg » 0) V(BR)CE0 35 - - Vdc Collector-Base Breakdown Voltage (IC = 50 mAdc, lg =0) V(BR)CBO 65 - - Vdc Emitter-Base Breakdown Voltage ( lg = 10 mAdc, lc = 0) V(BR)EB0 4.0 - - Vdc Collector Cutoff , = 1.2 Adc) GPE IMD(d3) IMD(d5) - 23.5 -40 -55 - dB (1) To MIL-STD- 1311 Version A, Test Method 2204B


    OCR Scan     		PDF MRF426 MRF426A MRF426, 130001 power transistor transistor 130001 K1746 pepi c MRF426A VK20Q PEPI -CH 2204B 725M
    MRF410

    Abstract: MRF-410
    Text: m Adc, lg = 0) v (B R )C E 0 V(BR)CES v (BR)EBO Ic e s 35 65 4 - - - 5 Vdc Vdc Vdc mAdc Collector-Base B reakdow n V o ltag e (I q = 50 m Adc, lg - 0) Em itter-Base Breakdow n V oltag e ( lg = 10 m Adc, lc = 0) Collector C utoff Current (V cg = 28 Vdc, V b e = 0) ON CHARACTERISTICS , b ~ 28 Vdc, lg = 0, f = 1 MHz) _ | CP b | - J 85 [ 100 | pF | [ hpg ] 10 , IL-STD - 1311 V e rs io n A, T est M e th o d 2204B, T w o T one, Reference each to n e G pe IM D (d 3


    OCR Scan     		PDF RF410 MRF410 MRF410 MRF-410
    Not Available

    Abstract: No abstract text available
    Text: , IC = 7mA TYP. MAX. UNIT 10 — |S21el2 (D V c e = 6V, I<3 = 7mA, f= lG H z — 15 , = 3mA, f= lG H z — 1.4 — NF (2) VCE = 6V, I c = 3mA, f=2G H z — 1.8 , - 6 9 .7 11.041 131.1 0.053 59.2 0.718 - 3 9 .1 600 0.491 - 9 6 .0


    OCR Scan     		PDF 2SC4844
    ic pt 2389

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C rs s : 0.02 pF (TYP) HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz Lg i = 1 .0 |_im, Lg 2 = 1.5 |am, W g = 400 |_im ION IMPLANTATION AVAILABLE IN TAPE & REEL OR BULK LOW PACKAGE HEIGHT: 1.0 mm MAX NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE m T , 2.332 2.229 2.447 2.303 2.348 2.367 S 21 ANG 177.2 169.3 164.4 160.0 158.4 150.0 145.5 141.5 136.8 131.1


    OCR Scan     		PDF NE25118 E25118 OT-343 JO-15-0 24-Hour ic pt 2389
    2001 - schneider C60n

    Abstract: merlin gerin C60n C60N schneider TVS2XW100C C60N TVS120LC20 TVS6XW100C merlin gerin fuse TVS4XW100C merlin gerin multi 9 C60N
    Text: Surgelogic® Surge Protective Devices LC, XR, and XW Series Class 1311 Catalog 1311CT0101R6/07 , Features Surge Capacity 40 kA/phase Catalog Number L-N L-G N-G 20 kA 20 kA 20 kA Configuration Voltage UL Suppressed Voltage Rating (SVR) Continuous Current MCOVq L-N L-G N-G , L-N L-G N-G 20 kA 20 kA 20 kA XR Series Voltage Specifications UL Suppressed , . Performance Features Surge Capacity 100 kA/phase L-N L-G N-G 50 kA 50 kA 50 kA XR


    Original     		PDF 1311CT0101R6/07 1-888-Square 1311CT0101 schneider C60n merlin gerin C60n C60N schneider TVS2XW100C C60N TVS120LC20 TVS6XW100C merlin gerin fuse TVS4XW100C merlin gerin multi 9 C60N
    4871 marking

    Abstract: ta 7205 marking V64 sot343 NE34018 V64 SOT 23 LD SOT 423 948 LG transistor kf 508
    Text: -343) 25 4 Noise Figure, NF (dB) GA · HIGH ASSOCIATED GAIN: 16.0 dB typical at 2 GHz · LG = , 153.8 150.4 147.1 143.7 137.3 131.1 125.2 119.5 113.9 100.9 88.9 77.8 67.8 58.9 50.9 43.4 , 157.3 153.7 150.3 147.0 143.6 137.2 131.1 125.1 119.4 113.9 107.2 100.9 94.8 88.9 78.0 , LD_PKG 0.4nH 0.18nH DRAIN LG GATE 0.18nH 0.93nH CDS_PKG CGS_PKG 0.1pF LS 0.25nH


    Original     		PDF NE34018 OT-343) NE34018 -TI-64 24-Hour 4871 marking ta 7205 marking V64 sot343 V64 SOT 23 LD SOT 423 948 LG transistor kf 508
    40MAG

    Abstract: No abstract text available
    Text: typical at 2 GHz Lg = 0.6 nm, W g = 400 |im TAPE & REEL PACKAGING ;u Li. Z CO NE34018 NOISE FIGURE , 3.487 3.285 3.118 2.975 2.852 2.729 S21 ANG 160.8 157.3 153.8 150.4 147.1 143.7 137.3 131.1 125.2 , S21 ANG 160.8 157.3 153.7 150.3 147.0 143.6 137.2 131.1 125.1 119.4 113.9 107.2 100.9 94.8 88.9 78.0 , LG PKG GATE 0.18nH 0.93nH CDS_PKG CGS_PKG 0.1pF LS 0.25nH 0.1 pF 0.18nH -± - SOURCE FET


    OCR Scan     		PDF OT-343) NE34018 NE34018 NE34018-TI-63 NE34018-TI-64 40MAG
    7m 0880 IC

    Abstract: No abstract text available
    Text: Ordering number : ENN6579 NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Package Dimensions Features • Low noise : NF=1.0dB typ (f= lG H z). unit : mm • High gain : |S 2 1 e I2 =12dB typ (f= lG H z). 2184 • High cutoff frequency : fT=7GHz typ. [EC3H02C] • Ultram iniature (1008 size) and thin (0.6mm) .0.5. , 0.734 - 131.1 1.498 83.7 0.201 17.7 0.596 -52.2 1200 0.717 -141.2 1.326


    OCR Scan     		PDF ENN6579 EC3H02C EC3H02C] E-CSP1008-4 7m 0880 IC
    PD9555

    Abstract: LS 1316 2N7219 555C IRFM240 2N7219 JANTX 2N721
    Text: negligible. Turn-on speed is substantially controlled by Lg + Lq. » IOR Thermal Resistance , ^ 300 ps; Duty Cycle s 2% ® K/W - "C/W W/K - W/°C 1-311 I«R IRFM240, JANTXV, JANTX-, 2N7219 , available in either orientation: 13.11 example: irfm240d i 3.21 example: irfm240u Fig. 15 - Optional


    OCR Scan     		PDF IRFM240 JANTXSN7S19 JANTXVSN7S19 MIL-S-1S500/596] HEXFET11 irfm240d irfm240u O-254 MIL-S-19500 PD9555 LS 1316 2N7219 555C IRFM240 2N7219 JANTX 2N721
    MRF440

    Abstract: No abstract text available
    Text: s e B reakd ow n Voltage (Iq = 100 m Adc, l^ = 0) E m itte r-B a s e B reakd ow n Voltage ( lg = 10 m , at all P hase Angles) NOTE: 2. To M il- Std- 1311 Version A, Test M ethod 2204, Two Tone. R


    OCR Scan     		PDF MRF448 MRF440
    Not Available

    Abstract: No abstract text available
    Text: itter Breakdown Voltage (lc = 200 mAdc, lg = 0) Collector-Em itter Breakdown Voltage (lc = 100 mAdc, V , NOTE: 2. To Mil- Std- 1311 Version A, Test Method 2204, Two Tone, Reference each Tone. C 1 , C2, C5


    OCR Scan     		PDF MRF448 MRF44S
    MRF448

    Abstract: No abstract text available
    Text: Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Iq = 200 mAdc, lg = , (CW) dB - -3 0 V No Degradation in Output Power NOTE: 2. ToMil-Std- 1311 Version A, Test


    OCR Scan     		PDF MRF448 MRF448
    2006 - FPD1500SOT89CESR

    Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
    Text: 0.01uF 33pF 20 O Lg 33pF L1 0.01uF + 1.0uF + Ld Q1 C1 33pF 0.63" L2 1.45" Component Values Component Lg Ld L1 L2 C1 Value 47nH 47nH 12nH 4.7nH 5.6pF , 0.01uF 20 O Lg 33pF 33pF L1 Q1 0.01uF + 1.0uF + Ld C1 33pF 0.63" L2 1.45" Component Values Component Lg Ld L1 L2 C1 Value 27nH 27nH 1.5nH 4.7nH 2.2pF , 20O Lg 3 3pF L1 Q1 0 .0 1uF + 1.0uF + Ld C2 33p F 0.63" C1 L2 1.45


    Original     		PDF FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89E FPD1500SOT89CE EB1500SOT89CE-BC FPD1500SOT89CESR FPD1500SOT89E MIL-HDBK-263
    2006 - FPD1500SOT89E

    Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
    Text: Lg 33pF L1 0.01uF + 1.0uF + Ld Q1 C1 33pF 0.63" L2 1.45" Component Values Component Lg Ld L1 L2 C1 Value 47nH 47nH 12nH 4.7nH 5.6pF -Vg Description LL , Note: OIP3 measured at 15dBm per tone. Evaluation Board Layout Vg Vd 33pF 0.01uF 20 O Lg , Values Component Lg Ld L1 L2 C1 Value 27nH 27nH 1.5nH 4.7nH 2.2pF -Vg Description , 20O Lg 3 3pF L1 Q1 0 .0 1uF + 1.0uF + Ld C2 33p F 0.63" C1 L2 1.45


    Original     		PDF FPD1500SOT89E FPD1500SOT8 FPD1500SOT89E 25mx1500m FPD1500SOT89E: FPD1500SOT89PCK FPD1500SOT89ESQ FPD1500SOT89ESR est 0114 FPD1500SOT89 MIL-HDBK-263
    2006 - FPD1500SOT89

    Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
    Text: 0.01uF 33pF 20 O Lg 33pF L1 0.01uF + 1.0uF + Ld Q1 C1 33pF 0.63" L2 1.45" Component Values Component Lg Ld L1 L2 C1 Value 47nH 47nH 12nH 4.7nH 5.6pF , 0.01uF 20 O Lg 33pF 33pF L1 Q1 0.01uF + 1.0uF + Ld C1 33pF 0.63" L2 1.45" Component Values Component Lg Ld L1 L2 C1 Value 27nH 27nH 1.5nH 4.7nH 2.2pF , 20O Lg 3 3pF L1 Q1 0 .0 1uF + 1.0uF + Ld C2 33p F 0.63" C1 L2 1.45


    Original     		PDF FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89CESR FPD1500SOT89CESQ FPD1500SOT89CESB DS090612 FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
    2006 - Transistor AC 51 0865 75 730

    Abstract: No abstract text available
    Text: 15dBm per tone. Evaluation Board Layout Vd D Vg 33pF 0.01uF 33pF 0.01uF 20 O Lg Ld ew Q1 L1 C1 33pF 0.63" L2 rN 33pF + 1.0uF + Lg Ld L1 L2 C1 , Vg 33pF 33pF 0.01uF 20 O Lg + 1.0uF + Ld ew Q1 0.01uF 33pF L1 C1 33pF 0.63" rN L2 Fo 1.45" Component Values Lg Ld L1 L2 C1 Value 27nH 27nH , per tone. Evaluation Board Layout Vg Vd 0 .0 1uF 33 pF 0 .01 uF 20O Ld Lg


    Original     		PDF FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE 25Pmx1500Pm FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 85GHz DS130523 Transistor AC 51 0865 75 730
    2006 - Transistor AC 51 0865 75 834

    Abstract: No abstract text available
    Text: 0.01uF 0.01uF + 1.0uF + 20 O Lg 33pF L1 Ld Q1 C1 33pF 0.63" L2 1.45" Component Values Component Lg Ld L1 L2 C1 Value 47nH 47nH 12nH 4.7nH 5.6pF -Vg , Board Layout Vg Vd 33pF 0.01uF 33pF + 1.0uF + 20 O Lg 33pF 0.01uF L1 Q1 Ld C1 33pF 0.63" L2 1.45" Component Values Component Lg Ld L1 L2 C1 Value , Lg 3 3pF L1 Q1 Ld C2 33p F 0.63" C1 L2 1.45" Component Values Component


    Original     		PDF FPD1500SOT89CE FPD1500SOT8 FPD1500SOT89CE mx1500ï FPD1500SOT89CESR FPD1500SOT89PCK FPD1500SOT89CESQ 85GHz DS111103 Transistor AC 51 0865 75 834
    2006 - FPD1500SOT89CE

    Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
    Text: Note: OIP3 measured at 15dBm per tone. Evaluation Board Layout Vg 33pF 0.01uF 20 O Lg 33pF L1 33pF 0.01uF Vd + 1.0uF + Q1 Ld C1 33pF 0.63" L2 1.45" Component Values Component Lg Ld , : OIP3 measured at 15dBm per tone. Evaluation Board Layout Vg 33pF 0.01uF 20 O Lg 33pF L1 33pF 0.01uF Vd + 1.0uF + Q1 Ld C1 33pF 0.63" L2 1.45" Component Values Component Lg Ld L1 , . Evaluation Board Layout Vg 33 pF 0 .01 uF 20O Lg 3 3pF C1 L1 Vd 0 .0 1uF 33 pF + 1.0uF + Q1


    Original     		PDF FPD1500SOT8 FPD1500SOT89CE FPD1500SOT89CE mx1500 42dBm FPD1500SOT89CE: FPD1500SOT89CESQ FPD1500SOT89CESR FPD1500SOT89PCK 4506 gh Transistor BJT 547 b 1850G
    FPD1500SOT89

    Abstract: FPD1500SOT89E 09DB FPD1500SOT89CE
    Text: Vg Vd 33pF 0.01uF 20O Lg 33pF 33pF L1 Q1 0.01uF + 1.0uF + Ld C1 , L2 Vd 0.01uF LL1608 Toko chip inductor L1 -Vg 33pF Description Lg , Vg Vd 33pF 0.01uF 20O Lg 33pF 0.01uF 33pF Ld Q1 L1 + 1.0uF + C1 , LL1005 Toko chip inductor ATC 600S chip capacitor 1.0uF 33pF Description Lg Ld L1 L2 C1 , 1. Measured at 15dBm per tone Board Layout Vg Vd 33pF 0.01uF 33pF 20O Lg 33pF


    Original     		PDF FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, 09DB FPD1500SOT89CE
    2007 - FPD1500SOT89

    Abstract: TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF FPD1500SOT89E filtronic Solid State 33id
    Text: Vg Vd 33pF 0.01uF 20O Lg 33pF 33pF L1 Q1 0.01uF + 1.0uF + Ld C1 , L2 Vd 0.01uF LL1608 Toko chip inductor L1 -Vg 33pF Description Lg , Vg Vd 33pF 0.01uF 20O Lg 33pF 0.01uF 33pF Ld Q1 L1 + 1.0uF + C1 , LL1005 Toko chip inductor ATC 600S chip capacitor 1.0uF 33pF Description Lg Ld L1 L2 C1 , 1. Measured at 15dBm per tone Board Layout Vg Vd 33pF 0.01uF 20O Lg 33pF 33pF


    Original     		PDF FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF filtronic Solid State 33id
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