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CN6572-011 TE Connectivity (CN6572-011) MXAW-5161
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5-1617353-5 TE Connectivity Ltd TRANSISTOR OUTPUT SOLID STATE RELAY
EL5161IW Intersil Corporation 1 CHANNEL, VIDEO AMPLIFIER, PDSO5, SOT-23, 5 PIN
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Samtec Inc
FW-10-05-L-D-516-159 Conn Board Stacker HDR 20 POS 1.27mm Solder ST SMD Tube - Bulk (Alt: FW-10-05-L-D-516-159)
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LD 5161 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - 5161 common anode

Abstract: TDSO5151 LD 5161 TDSR5150 5161 seven segment 5161 common cathode TDSR5151 led 7 segment 5161 TDSO515 TDSG5151
Text: segment y per g IF = 10 mA TDSR5150/5160 (digit average) 1) IF = 10 mA TDSR5151/ 5161 Dominant , values of segments a to g 2 (8) Symbol Min IV IV ld lp VF VR 280 450 6 Typ , 10 mA TDSO5151/ 5161 Dominant wavelength IF = 10 mA Peak wavelength IF = 10 mA Angle of half , ld lp VF VR 700 1800 6 626 635 ±50 2 15 Symbol Min Typ IV IV ld lp VF VR 700 1100 581 6 585 ±50 2.4 15 Symbol Min Typ IV IV ld lp VF


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PDF TDSR515. TDSR516. TDSO515. TDSO516. TDSY515. TDSY516. TDSG515. TDSG516. D-74025 5161 common anode TDSO5151 LD 5161 TDSR5150 5161 seven segment 5161 common cathode TDSR5151 led 7 segment 5161 TDSO515 TDSG5151
n channel fet k 1118

Abstract: GS 069 MGF4319G mgf4316g
Text: ® Drain G D -4 RECOMMENDED BIAS CONDITIONS 0 V ds = 2 V , lD =10m A # Refer to Bias Procedure , Super Low Noise InGaAs HEMT Typical Characteristics S Parameters (Ta=25°C , V ds =2V , lD =10mA ) f , 5.585 5.401 5.161 4.899 4.626 4.316 4.100 3.887 3.765 3.617 3.526 3.421 3.349 3.333 3.349 3.356 3.337 , 0.69 0.72 0.80 0.86 0.91 0.95 0.96 0.98 1.01 1.11 K Noise Parameters (Ta=25°C , VDS=2V , lD


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PDF MGF431xG MGF431xG MGF4316G MGF4319G MGF4316G MGF4319G n channel fet k 1118 GS 069
AN7254

Abstract: RFP12P08 RFP12P10 TB334 TA17511
Text: -220AB SOURCE 5-161 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD , SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFP12P08 BVdss lD = 250nA , Resistance (Note 2) rds(on) lD = 12A, VGS = -10V, (Figures 6, 7) - - 0.300 Q. Turn-On Delay Time 1d(ON) ID = , 7 lD MAX CONTINUOUS , 6 8 10 12 14 lD ; DRAIN CURRENT (A) 16 18 20 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN


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PDF 80Vand RFP12P08, RFP12P10 TA17511. RFP12P08 O-220AB RFP12P08 RFP12P10 AN7254 TB334 TA17511
Not Available

Abstract: No abstract text available
Text: No. 68664 Base No. 68665 Base No. 68666 0.38 urn (15 pin.) go ld 0.76 |jm (30 pin.) g o ld 0.38 pm (15 pin.) GXT™ 0.76 pm (30 pin.) GXT™ mm in. mm in. 2x3 , 51.61 2.032 1.68 0.066 44.86 1.766 2 x 21 -018 -019 -019 -019 -019


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PDF
Not Available

Abstract: No abstract text available
Text: Posts— C opper a llo y, plated .0 000 30 [0 .0 0 0 7 6 ] g o ld over .0 0 0 0 5 0 [0 .0 0 1 2 7 , ¡43 .99 ] 1.600 [40 .64 ] 2.304 [ 58 .52 ] 2.504 [63 .60] . 1.506 [38 .25] 2.032 [ 51.61


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PDF
Not Available

Abstract: No abstract text available
Text: Y OHIO ELECTRIC / C D WARREN, PACKARD DELPHI / 5161 CD -3 . 1 ± 0 . , 5. WHEN H O LD IN G T E R M IN A L IN A F I X E D GAUGE OR " B " D IM E N S IO N D I S T A N C E , 9 9 B C 3 0 .6 0 .6 0 .2 5 0 .2 5 D 5161 4 4 1>2,3,5 1,2,3,5 A P P L I C A


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PDF C60-61 O8MY90 16AP86
n channel fet k 1118

Abstract: MGF4316G MGF4319G gD 679 transistor MGF4316 low noise hemt transistor LD 5161 st 3617
Text: =25°C , Vds=2V , lD =10mA) f (GHz) S11 S21 S12 S22 MSG/MAG (dB) K Magn. Angle Magn. Angle Magn. Angle , -70.9 5.161 111.8 0.064 42.4 0.457 -58.2 21.6 0.35 5 0.831 -88.8 4.899 96.8 0.075 29.3 0.424 -71.6 19.8 , Parameters (Ta=25°C , Vds=2V , lD =10mA) f (GHz) G opt. Rn (£1) NFmin.(dB) Gs (dB) Magn. Angle


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PDF MGF431xG MGF431xG 12GHz MGF4316G MGF4319G MGF4316G n channel fet k 1118 MGF4319G gD 679 transistor MGF4316 low noise hemt transistor LD 5161 st 3617
Lambda LCS-A

Abstract: Lambda LCS-CC Lambda LCS lxs-d-5-0v-r Lambda Precision Voltage Regulators lambda lxs LAMBDA LXD LXS-E Lambda LC lxsd
Text: 6) Shock-MIL-STD-8108, Method 516.1 , Procedures I and III, MIL-E-5272C, Para. 4.15.5.1, 4.15.5.2 , tracking unit outputs. (d) Ratings in parenthesis for LD and LN Series when cover is used. (A) Alt , range. LD , LC, LN, and LX Series power modules are available for operation at 360-44OHZ. Consult , parenthesis for LD and IN Series when cover is used. (A) All outputs continuously adjustable over entire range , output voltage range. (C) LD , LC, LN, and LX Series power modutes are available for operation at


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PDF MIL-STD-810 250jxV 214/i Lambda LCS-A Lambda LCS-CC Lambda LCS lxs-d-5-0v-r Lambda Precision Voltage Regulators lambda lxs LAMBDA LXD LXS-E Lambda LC lxsd
40N25

Abstract: IXTH40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos IXTH40N30 1712 mosfet LD 5161
Text: )dss Drain-Source Breakdown Voltage 40N30 300 — — V VGS = 0V lD = 250/iA 40N25 250 — — V vgs(th) Gate Threshold Voltage ALL 2.0 — 4.5 V Vds = VGS, lD = 250/iA 'gss Gate-Source Leakage ALL , Resistance (2) ALL — — 0.08 a Vqs = 10V, ld = 0.5 ld Max. gps Forward Transconductance (2) ALL 16.0 18.0 — S Vds > bfon) xRDS(on)max. 'd = 0.5 lD Max. C;ss Input Capacitance ALL — — 4500 PF Vgs = , Capacitance ALL — — 140 PF td(on) Turn-On Delay Time ALL — — 90 ns VDD = 0.5 BVdss, 'd = 0.5 lD Max


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PDF IXTH40N25 IXTH40N30 IXTM40N25 IXTM40N30 40N25 f g megamos SM 226 6V megamos 46 08 09 6 megamos 1712 mosfet LD 5161
75n08

Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 k 1120 p 75n08 f g megamos P-Channel MOSFET 800v
Text: =0V, Tc =125°C RDS(on) Static Drain-Source On-State Resistance (2) ALL — — 0.02 a Vgs = 10V, lD = 0.5 lD Max. 9 FS Forward Transconductance (2) ALL 25.0 28.0 — S Vds > ta(on) xFlDS(on)max. ta = 0.5 lD Max. Cfes Input Capacitance ALL — — 4500 PF Vgs = 0V, Vos = 25V, f = 1.0 MHz C0ss Output , Time ALL — — 90 ns Vdd = 0.5 BVoss. ta = 0.5 lD Max. »r Rise Time ALL — — 110 ns Z0 = 500 , Gate Charge (Gate-Source Plus Gate-Drain) ALL — 200 — nC Vqs = 10V, lD = !d Max- VDS = 0.8 BVDSS


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PDF IXTH75N08 IXTH75N10 IXTM75N08 IXTM75N10 IXTH75N10, IXTM75N10, 0-100V, O-247 75n08 megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 k 1120 p 75n08 f g megamos P-Channel MOSFET 800v
50N15

Abstract: TL 1074 CT megamos 46 08 09 6 megamos 48 ixth50n20 f g megamos 50N20 a 1712 mosfet 00D03 IXTM50N15
Text: )dss Drain-Source Breakdown Voltage 50N20 200 — — V Vqs = 0V 50N15 150 — — V lD = 250/iA VGS , Resistance (2) ALL — — 0.045 n VGS = 10V, lD = 0.5 lD Max. 9FS Forward Transconductance (2) ALL 20.0 23.0 — s VdS > ta(on) XRDS(on)max.- ta = 0.5 lD Max. Cjss Input Capacitance ALL — — 4500 pF VGS = , Capacitance ALL — — 140 PF td(on) Turn-On Delay Time ALL — — 90 ns VDD = 0.5 BVdss. ta = 0.5 lD Max , VGS = 10V, lD = lD Max., VDS = 0.8 BVdss, (Gate charge is essentially independent of operating


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PDF IXTH50N15 IXTH50N20 IXTM50N15 IXTM50N20 00D3b5 IXTH50N20, IXTM50N20, 50-200V, 50N15 TL 1074 CT megamos 46 08 09 6 megamos 48 f g megamos 50N20 a 1712 mosfet 00D03
a 1712 mosfet

Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Text: €” V Vqs = ov lD = 250yna 67n08 80 — — V VGS(th) Gate Threshold Voltage all 2.0 — 4.5 V Vds = , , Tc = 125°C RDS(on) Static Drain-Source On-State Resistance (2) all — — 0.025 n Vqs = 10v, ld = 0.5 ld Max. gps Forward Transconductance (2) all 25.0 28.0 — s Vds > ta(on) xRDS(on)max. b = 0.5 lD Max. cjss Input Capacitance all — — 4500 pF Vqs = ov, VDS = 25V, f = 1.0 MHz C0ss Output , Time all — — 90 ns VDD = 0.5 BVdss. ta = 0.5 lD Max. z0 = son (MOSFET switching times are


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PDF IXTH67N08 IXTH67N10 IXTM67N08 IXTM67N10 IXTH67N10, a 1712 mosfet ID 48 Megamos K 1120 megamos 46 08 09 6
Not Available

Abstract: No abstract text available
Text: tL, V |H 'O Z 5.5 ±0.5 ±5.0 HA V| = V C C .G N D Vo = Vcc. GND 'O LD 5.5 , LD 'O HD V q l D - 1-65 V Max V q h D = 3-85 V Min V|sj 'cc = Vcc o r G ND ' All outputs , pF pF Test Conditions V c c = 5.0 V V c c = 5.0 V 5 FA C T DATA 5-161


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PDF MC74AC240/74ACT240 ACT240 751D-04
BSC 031 N 06 NS 3

Abstract: 21N50 ixth21n50 IXTM21N50
Text: Breakdown Voltage 21n50 500 — — V Vqs = 0V lD = 250/ia 21n45 450 — — V vGS(th) Gate Threshold , €” 0.25 n Vgs = 10V, ld = 0.5 ld Max. gps Forward Transconductance (2) all 11.0 13.0 — s Vds > ta(on , td(on) Turn-On Delay Time all — — 90 ns Vdd = 0.5 BVdss. 'd = 0.5 ld Max. z0 = 5oa (MOSFET , €” — 95 ns Qg Total Gate Charge (Gate-Source Plus Gate-Drain) all — 150 — nC Vqs = 10V, ld = lD , -247 lD Current Rating 25 = 25 Amps 50 = 50 Amps Channel Polarity N = N-Channel P = P-Channel ' Optional


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PDF IXTH21N45 IXTH21N50 IXTM21N45 IXTM21N50 IXTH21N50, BSC 031 N 06 NS 3 21N50
ef68b09

Abstract: EF6809 SGR 42 relais MODERN EF68A09 l8vs BMI 34D C1343 EF6809CV ior p237
Text: No file text available


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PDF EF6809 EF68B0S EF6809C, EF6809CV, EF6S09CM MIL-STD-883C 7cI2ci537 CB-521 ef68b09 SGR 42 relais MODERN EF68A09 l8vs BMI 34D C1343 EF6809CV ior p237
MC74AC373

Abstract: No abstract text available
Text: this diagram is provid ed o nly fo r the understanding o f logic operations and shou ld not be used to , /\ - W orst Case tiA mA FACT DATA 5-161 MC74AC533 · MC74ACT533 AC CHARACTERISTICS (For


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PDF C74AC533 C74ACT533 MC74AC533/74ACT533 MC74AC373/74ACT373, MC74AC533/74ACT533. MC74AC373/74ACgation 74ACT MC74AC373
Not Available

Abstract: No abstract text available
Text: ld be s horted a t a tim e , and d uratio n o f the sh o rt c irc u it sh ou ld n ot exceed one , r2 5 il M onollthla RIHIIM em o ries £1 5-161 ADV MICRO P L A / P L E /A RR AYS lt


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PDF OS57S 40-pin PAL32R16 PAL32R16 T-46-13-47 32R16
ixtm11p20

Abstract: IXTP11P20 11P20 ixtp11p15 mosfet 11P20
Text: V(br)dss Drain-Source Breakdown Voltage 11P20 200 — — V Vqs - ov lD = 250/iA 11P15 150 — â , On-State Resistance (2) ALL — — 0.5 Ù Vqs = 10V, lD = 0.5 ld Max. gps Forward Transconductance (2 , 0.5 lD Max. Zo = 50ft V Rise Time ALL — — - ns td(off) Tum-Off Delay Time ALL — — - ns , VGS = 10V, lD = Id Max., Vos = 0.8 BVOSs Qgg Gate Source Charge ALL — 18 - nC Qgd Gate-Drain , OUTLINES TO-247 TO-204 AC TO-204 AA k L -s F t L* ivnir pin 1. gate 2. drain 3. source Jj t) l-D n d -g C


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PDF 37-AS IXTP11P20, IXTM11P20, IXTP11P20 IXTP11P15 1XTM11P20 IXTM11P15 50-200V, O-220 O-204 ixtm11p20 11P20 ixtp11p15 mosfet 11P20
IXTH26N50

Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Text: Drain-Source On-State Resistance (2) ALL 0.2 fì VGs = 10V, lD = 0.5 lD Max. gps Forward Transconductance (2) 11.0 13.0 — S VDS > b(on) xRDS(on)max. >d = 0.5 lD Max. CjSS Input Capacitance — — 4500 PF Vgs , 0.5 lD Max. Zo = son (MOSFET switching times are essentially independent of operating temperature. See , ) ALL — 165 — nC Vqs = 10V, lD = Id Max., VDs = 0.8 BVdss. (Gate charge is essentially independent , -247 lD Current Rating 25 = 25 Amps 50 = 50 Amps Channel Polarity N = N-Channel P = P-Channel ' Optional


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PDF IXTH26N45 IXTH26N50 IXTM26N45 IXTM26N50 Mbflb22b IXTH26N50, 00ESN0TINCLUOE TL 1074 CT
PAL32R16

Abstract: No abstract text available
Text: e output s hou ld oe shorted at a time, and duration o f the snort c ircu it should not exceed o ne , ns ns ns MHz External No feedback 16 25 H M onoJIthlo Ü 0 ktom oH e* 5-161


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PDF PAL32R16 40-pin PAL32R16 32R16
Mosfet K 135 To3

Abstract: a 1712 mosfet 11P50 ixtm11p50
Text: 11P50 500 — — V VGS = OV 11P45 450 — — V lD = 250/ia vGS(th) Gate Threshold Voltage all 2.0 â , =0V, Tc = 125°c RDS(on) Statte Drain-Source On-State Resistance (2) all — — 0.75 n Vos = 10v, lD = 0.5 lD Max. 9FS Forward Transconductance (2) all 5 6 — S Vos > 'o(on) *RDS(on)max. b = 0.5 b , all — — - ns VDD = 0.5 BVdss. b = 0.5 lD Max. V Rise Time all — — - ns Zo = son td(off , Gate-Drain) all — - 210 nc Vgs = 10v, lD = b Max., Vos = 0.8 BVDSS Q»s Gate Source Charge all — 46 - nc


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PDF IXTH11P50 IXTM11P50 IXTH11Pit5 IXTM11P45 IXTH11P50, IXTM11P50, 50-500V, 00esn0tincluoe Mosfet K 135 To3 a 1712 mosfet 11P50
ixth20p25

Abstract: 20p25 ixtm20p25
Text: )dss Drain-Source Breakdown Voltage 20p25 250 — — V VGS = OV - - — — V lD = 250ßA v6s , On-State Resistance (2) all — — 0.24 n VGS = 10V, lD = 0.5 lD Max. 9fs Forward Transconductance (2) all 6 7 — S Vos > lD (on) xRDS(on)max. 'd = 0-5 Id Max. Ci» Input Capacitane© all — — 4300 , -204 AA k L -s F t L* ivnir pin 1. gate 2. drain 3. source Jj t) l-D n d -g C r n — h—Q pin 1. gate , 4.32 541 5 ♦W 02225 0 2268 5.561 5161 3 F 0.030 0.150 2 23 3.81 1 QUADPAC NOTES 1. DIMENSION


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PDF ixth20p25 ixtm20p25 10Mfi) Li22b DOODaS11] IXTH20P25 O-247 O-C04AA 00ESN0TINCLUOE 20p25
Lambda LCS-A

Abstract: LCS-A-04 nt 101 thermostat Lambda LCS LCS-a-28 Lambda LCS-c-15 Lambda power supply LCS-C-15 LCS-B-15 fj 5161 LCS-A-15
Text: . 6) Shock-MiL-STD-810B, Method 516.1 , Procedures I and 111, MIL-E-5272C, Para. 4.15.5.1, 4.15.5.2 , ±12 Vbtts are dual tracking unit outputs. (4) Ratings in parenthesis for LD and IN Series when cover is , lmM1. With exception of LND Series, current ratine applies over entire output voltage range. (Q LD , LC , price. (3) ± 15 to * 12 Volts are dual tracking unit outputs. (4) Ratings in parenthesis for LD and , . '3> ±15 to ±12 Volts are dual tracking unit outputs. I .4) Ratings In parenthesis for LD and LN


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PDF MIL-STD-810 Lambda LCS-A LCS-A-04 nt 101 thermostat Lambda LCS LCS-a-28 Lambda LCS-c-15 Lambda power supply LCS-C-15 LCS-B-15 fj 5161 LCS-A-15
19P20

Abstract: IXTH19P20 Mosfet K 135 To3 ixtm19p20
Text: VGS = OV lD = 250/iA 19P15 150 — — V vGS lD Max. Zo = 50ft t, Rise Time ALL — — - ns , (Gate-Source Plus Gate-Drain) ALL — - 210 nC Vos = 10v, lD = lD Max., Vqs = 0.8 BVDSS Qgs Gate Source , . gate 2. drain 3. source Jj t) l-D n d -g C r n — h—Q pin 1. gate 2. drain 3. source TL ■H »-a- , €¢ 1 01j9 0 213 4.32 541 5 ♦w 02225 0 2268 5.561 5161 3 f 0.030 0.150 2 23 3.81 1 QUADPAC


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PDF IXTH19P20, 19P20, IXTH19P20 IXTH19P15 IXTM19P20 IXTM19P15 50-200V, O-247 O-204 -65to 19P20 Mosfet K 135 To3
HI201

Abstract: IH201 SW-201 SW201GP SW-202
Text: SWITCHES & MUL TfPLEXERS 5-161 SW-201/SW-202 ABSOLUTE MAXIMUM RATINGS (Note 1) Operating Temperature , Range Ta Operating 0 - 70 •c "ON" Resistance ron VA = 0V, l0 = 1mA VA= ±10V, lD = 1mA - - 175 175 1! R0n Match Between Switches Rqn Match VA = 0V, lD = tOO^A; (Note U — 10 - % Analog Voltage Range VA , "OFF", (Note 5) - 14.5 mA Ground Current All Channels "ON" or "OFF" - 10.0 mA notes: 1. VA = OV, lD


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PDF SW-201/SW-202 SW-201 DG-201, LF11201/13201, HI201, IH201 SW-202 LF11202/12202/13202 IH202 SW-201 HI201 IH201 SW201GP SW-202
Supplyframe Tracking Pixel