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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

LB 122 NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TN3725A

Abstract: LB 122 NPN TRANSISTOR TN3725 MMPQ3725 SOIC-16 LB 122 transistor LB 122 NPN transistor A4t 35
Text: -226 SOIC-16 NPN Switching Transistor This device is designed for high speed core driver applications up , Copyrighted By Its Respective Manufacturer in ev r-co a a. < in CM h-co NPN Switching Transistor , Its Respective Manufacturer NPN Switching Transistor (continued) CO >1 IO en > ■o D GO Is* cn , 00MDL5S Ô4T 5-61 This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor , This Material Copyrighted By Its Respective Manufacturer NPN Switching Transistor (continued) AC


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PDF TN3725A MMPQ3725 O-226 SOIC-16 100KS1 b501130 TN3725A LB 122 NPN TRANSISTOR TN3725 MMPQ3725 SOIC-16 LB 122 transistor LB 122 NPN transistor A4t 35
TIP 122

Abstract: texas instruments tip122 T1P120 TEXAS INSTRUMENTS TIP120 TIP 122 transistor TIP122 texas instrument TRANSISTOR tip122 TIP122 TIP121 TEXAS TIP127
Text: , TIP121, TIP122 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed For , Dissipation Derating Curve, Figure 10. 4. This rating is based on the capability of the transistor to operate , - —-— I TIP120, TIP121, TIP122 T-33-29 ì N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER TEST CONDITIONS TIPI 20 TIPI 21 TIP 122 UNIT MIN TYP MAX MIN TYP MAX MIN TYP MAX v(BR|CEO Iq = 30 mA, lB - 0, See Note 5 60 80 100 V ICEO VCE =


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PDF TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 T-33-29 to-22qab TIP120 TIP121 TIP 122 texas instruments tip122 T1P120 TEXAS INSTRUMENTS TIP120 TIP 122 transistor TIP122 texas instrument TRANSISTOR tip122 TIP121 TEXAS
1999 - e3s-cr67

Abstract: XS2F-D421-DC0-A XS2F-D421-GC0-A E39-R1 tube light wiring diagram LB 122 transistor To-92 LB 122 NPN TRANSISTOR
Text: configuration Mode switch Output transistor NPN Light-ON On when light is received. Dark-ON , Versatile NPN , PNP, L.O., D.O., in one unit Ordering Information J CLEAR GLASS SENSORS Connections , NPN and PNP, switch l t bl selectable L.O. and D.O., switch selectable 2-m attached cable , selectable Sensitivity adjustment 2-turn potentiometer Output NPN and PNP, switch selectable Capacity 30 VDC, 100 mA; residual voltage, NPN 1.2 V, PNP 2.0 V Response time 1 ms on, 1 ms off


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PDF E3S-CR67/62 w/E39-R1 w/E39-R6 E3S-CR67/62 E3S-CR67/62. 1-800-55-OMRON e3s-cr67 XS2F-D421-DC0-A XS2F-D421-GC0-A E39-R1 tube light wiring diagram LB 122 transistor To-92 LB 122 NPN TRANSISTOR
light dark sensor circuit

Abstract: reflector sensor datasheet E39-R1 E3S-CD62 LB 122 transistor To-92
Text: configuration Mode switch Output transistor Output circuits NPN Light ON On when light is , Output configuration Mode switch Output transistor NPN Light ON Timing chart On when , Versatile NPN , PNP, L.O., D.O., in one unit Ordering Information E3S-CR67/62 CLEAR GLASS SENSORS , meter 2-m attached cable W/E39-R1 250 mm Mode NPN and PNP, switch selectable l t bl , 40 mA Output NPN and PNP, switch selectable Response time 1 ms on, 1 ms off Indicators


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PDF E3S-CR67/62 E3S-CR67/62 /E39-R6 1-800-55-OMRON E268-E3-1 light dark sensor circuit reflector sensor datasheet E39-R1 E3S-CD62 LB 122 transistor To-92
2000 - Not Available

Abstract: No abstract text available
Text: length, 10 -9 meters, 3.937 x 10 -8 inches. • NPN Transistor output designed to provide a , , current can then pass from Positive, through the load, and through the NPN transistor to ground , pre-wired models 1 NPN or PNP output models available Ordering Information 3 SENSORS Through-beam g IR Part number NPN output PNP output Pre-wired Appearance Sensing g distance , reflective NPN output E3Z-T61/T66 E3Z-R61/R66 E3Z-D61/D66 E3Z-D62/D67 PNP output Item


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PDF 1-800-55-OMRON E308-E3-1
TIP 2n3055

Abstract: transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 41 transistor TIP 122 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
Text: TYPE TIP30S5 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER AMPLIFIER AND , |_/2. Texas Instruments 2-281 TYPE TIP3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR , Instruments TYPE TIP30S5 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR PARAMETER MEASUREMENT , rate of 28 mW/°C. 4. This retino is based on the capability of the transistor to operate safely in , , RBE = 100 u 1 mA 'ceo Collector Cutoff Current VCE " 30 V, lB »0 0.7 mA 'CEV Collector Cutoff


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PDF TIP30S5 2N3055 TIP 2n3055 transistor tip 5530 tip 147 TRANSISTOR equivalent TIP 41 transistor TIP 122 transistor transistor tip 3055 TIP 122 transistor APPLICATION NOTES transistor TIP 42 tip 127 TRANSISTOR equivalent TRANSISTOR tip 127
d421

Abstract: XS2F-D421-GC0-A XS2F-D421-DC0-A E3S-CD68
Text: transistor Photoelectric sensor main circuit NPN or PNP output selector NPN output transistor , transistor Photoelectric sensor main circuit NPN output transistor Dark-ON ON when light is , Operation J TIMING CHART Output configuration Mode selector Output transistor NPN Light-ON , colored bottles H IP67 rugged metal body H 1ms response time, high-speed production H NPN , PNP , 30 VDC Diffuse 40 mm ±10 mm Mode NPN and PNP, switch-selectable L.O. and D.O


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PDF E3S-CD68/63 E3S-CD68/CD63 1-800-55-OMRON E000-E3-0 d421 XS2F-D421-GC0-A XS2F-D421-DC0-A E3S-CD68
1999 - Not Available

Abstract: No abstract text available
Text: Output configuration Mode selector Output transistor NPN Light-ON Output circuits On , circuit NPN output transistor Dark-ON ON when light is not received. Load NPN or PNP , is not received. Control output NPN or PNP output selector NPN output transistor Dark-ON , Mode selector Output transistor NPN Light-ON On when light is received. Timing chart , colored bottles H IP67 rugged metal body H 1ms response time, high-speed production H NPN , PNP


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PDF E3S-CD68/63 E3S-CD68/CD63 E3S-CD68/CD63 1-800-55-OMRON
LB 122 transistor

Abstract: 2SC3622 LB 122 NPN TRANSISTOR
Text: NEC NPN SILICON TRANSISTOR 2SC3622 DESCRIPTION The 2SC3622 is designed for general-purpose , Transistor , or muting. FEATURES • High DC Current Gain. hFE = 1000 to 3200 (@ Vce = 5.0 V, lc = 1.0 mA) • Low Collector Saturation Voltage. VcE(sat) = 0.07 V TYP. (@ lc = 50 mA, lB . = 5.0 mA) • High , VEBO Emitter to Base Voltage. 12 V lc Collector Current . 150 mA lB , Turn-off Time 1.22 JUS \IB1 = —lB2 = 1.0 mA 'CBO Collector Cutoff Current 100 nA Vcb = 50 V, lE = 0


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PDF 2SC3622 2SC3622 LB 122 transistor LB 122 NPN TRANSISTOR
2SC3623

Abstract: LB 122 NPN TRANSISTOR
Text:  NPN SILICON TRANSISTOR DESCRIPTION The 2SC3623 is designed for general-purpose applications requiring High DC Current Gain. This is suitable for all kind of driving, instead of Darlington Transistor , €¢ Low Collector Saturation Voltage. vCE(sat) = 0.07 V TYP. (@ lc = 50 mA, lB = 5.0 mA) • High VEB0 , lc Collector Current.150 mA lB Base Current , 0.72 MS I lc = 50 m A toff Turn-off Time 1.22 MS \lB1 =-lB2 = 1.0 mA 'CBO Collector Cutoff Current


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PDF 2SC3623 LB 122 NPN TRANSISTOR
2003 - BFU540

Abstract: SiGe POWER TRANSISTOR
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product , NPN SiGe wideband transistor BFU540 FEATURES PINNING · Very high power gain PIN · , specification NPN SiGe wideband transistor BFU540 CHARACTERISTICS Tj = 25 °C; unless otherwise , Product specification NPN SiGe wideband transistor BFU540 MLE152 250 MLE153 50 , . Philips Semiconductors Product specification NPN SiGe wideband transistor BFU540 MLE156 200


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PDF M3D124 BFU540 SCA75 613516/04/pp16 BFU540 SiGe POWER TRANSISTOR
1996 - 508df

Abstract: BU508D schematic diagram 508D sgs 508d transistor BU508D TO-218AC Package bu208d datasheet BU508D P003N T218
Text: BU208D/508D/508DFI HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR s s s s s , E81734 (N) JEDEC TO-3 METAL CASE NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE TO-3 1 2 , High Voltage NPN Silicon Power Transistor F 8 Amp / 1500 V device in TO-218AC package F 125 Watts , Storage Time Fall Time I C = 4.5 A hF E = 2.5 V CC = 140 V LC = 0.9 mH LB = 3 µH VF Diode F , 0.637 L3 18 L5 0.708 3.95 4.15 L6 0.155 0.163 31 1.220 ­ 12.2


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PDF BU208D/508D/508DFI ISOWATT218 E81734 BU208D, BU508D BU508DFI O-218 ISOWATT218 508df BU508D schematic diagram 508D sgs 508d transistor BU508D TO-218AC Package bu208d datasheet P003N T218
2001 - 4 pin dual-emitter

Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary , Fig.1 Simplified outline SOT343R. NPN SiGe wideband transistor for low voltage applications in a , Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 LIMITING VALUES In , Preliminary specification NPN SiGe wideband transistor BFU540 150 250 Ptot (mW) hFE 200 , specification NPN SiGe wideband transistor BFU540 200 40 Cre (fF) 160 gain (dB) MSG 30


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PDF M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
2001 - 4 pin dual-emitter

Abstract: BFU510 TRANSISTOR FOR 10GHz oscillator RF TRANSISTOR 10GHZ low noise RF TRANSISTOR 10GHZ RF NPN power transistor 2.5GHz RF TRANSISTOR 2.5 GHZ s parameter RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ transistor bf 520
Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary , Fig.1 Simplified outline SOT343R. NPN SiGe wideband transistor for low voltage applications in a , Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 LIMITING VALUES In , Preliminary specification NPN SiGe wideband transistor BFU540 150 250 Ptot (mW) hFE 200 , specification NPN SiGe wideband transistor BFU540 200 40 Cre (fF) 160 gain (dB) MSG 30


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PDF M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU510 TRANSISTOR FOR 10GHz oscillator RF TRANSISTOR 10GHZ low noise RF TRANSISTOR 10GHZ RF NPN power transistor 2.5GHz RF TRANSISTOR 2.5 GHZ s parameter RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ transistor bf 520
1996 - Philips FA 291

Abstract: Microwave PIN diode spice BFQ621 DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ621 NPN 7 GHz wideband transistor Product , Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 FEATURES DESCRIPTION · High power gain Silicon NPN transistor in a 4-lead dual-emitter SOT172A2 package with a , specification NPN 7 GHz wideband transistor BFQ621 LIMITING VALUES In accordance with the Absolute , Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 CHARACTERISTICS Tj = 25 °C


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PDF BFQ621 OT172A2 Philips FA 291 Microwave PIN diode spice BFQ621 DIN45004B
3H2 philips

Abstract: marking B5T BFG197W D054 DIN45004B TT5 marking
Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFG197W BFG197W/X , specification NPN 7 GHz wideband transistor _BFG197W/X; BFG197W/XR LIMITING VALUES In accordance with the , Product specification NPN 7 GHz wideband transistor lA,/w „ BFG197W BFG197W/X; BFG197W/XR 160 , NPN 7 GHz wideband transistor BFG197W BFG197W/X; BFG197W/XR -30 dim m -40 -50 -60 -70 10 20 , Product specification NPN 7 GHz wideband transistor BFG197W BFG197W/X; BFG197W/XR 180°- -0.2 (1) r0p


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PDF BFG197W BFG197W/X; BFG197W/XR OT343 OT343R BFG197W/X BFG197W/XR BFG197W BFG197W/X 3H2 philips marking B5T D054 DIN45004B TT5 marking
D02fc

Abstract: transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6
Text: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 FEATURES , metallization ensures excellent reliability. DESCRIPTION Silicon NPN transistor in a 4-lead dual-emitter SOU , NPN 7 GHz wideband transistor BFQ621 L1 = 8 nH. L2 = 15 nH, 2 turns copper wire, internal diameter 2 , Philips Semiconductors Product specification NPN 7 GHz wideband transistor 0 dim MLC992 , specification NPN 7 GHz wideband transistor BFQ621 90° Vce = 18 V; l0 = 120 mA; Zo = 50 il. Fig.9 Common


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PDF BFQ621 D02fc transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6
BT816

Abstract: TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Text: DIGITAL TRANSISTOR : NPN ELECTRICAL CHARACTERISTICS: 100 mA Serie« Vin(oT) Vinton) V» on) b te , 200 10 5 B 7fi2flc1cH DGmSST 155 ■TRANSISTORS DIGITAL TRANSISTOR * NPN ELECTRICAL , Transistor . Series © Code Description A PNP 100mA Series B PNP 500mA Series C NPN 100mA Series D NPN , DTA/DTB/DTC/DTDI DIGITAL TRANSISTOR APPLICATION: • Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts (1 transistor & 2 resistors) with one part • Available in a


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PDF mm/13" O-92S) BT816 TA114E a768 transistor b722 B861 B718 equivalent transistor TT 3034 C785 transistor b714 transistor B728
Not Available

Abstract: No abstract text available
Text: SGS-THOMSON RfflDSlSÎOilLiSiriRiOiDtgi B U W 89 HIGH POW ER NPN SILICO N TR AN SISTO R . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED VERY LOW , FREQUENCY AND EFFICENCY CONVERTERS D ESCRIP TIO N The BUW89 is a Multiepitaxial planar NPN transistor in , le = 7.5A le = 15A le = 15A le = 15A Vcc = 72V lB = Ib lB = Ib = 0.375A 1 .5A 0.375A 1 .5A LU , itter Dynamic Voltage lB = 1 .5A Ib = 1 .5A Rc =0 Tj = 100°C Ibi =2.2 5A Tj = 25°C Tj = 1 00°C Ibi


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PDF BUW89 O-218
1999 - bux48

Abstract: bux48a I v48a BUX48 ST 0638 v48a
Text: ® BUX48/48A BUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS s s s s s STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING , TRANSISTOR LOW POWER CONVERTERS TO-3 TO-218 3 2 DESCRIPTION The BUX48/A, BUV48A and BUV48AFI are silicon Multiepitaxial Mesa NPN transistors mounted respectively in TO-3 metal case, TO-218 plastic , A LB = 3 µH V BE = -5 V I B1 = 2 A same conditions at T c = 125 o C for BUX48A/V48A/V48AFI V CC =


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PDF BUX48/48A BUV48A/V48AFI O-218 BUX48/A, BUV48A BUV48AFI O-218 ISOWATT218 bux48 bux48a I v48a BUX48 ST 0638 v48a
transistor PNP A124 EQUIVALENT

Abstract: transistor PNP A124 E3G-R13-G E3G-R17-G E3G-MR19-G E3G-MR19T-G e3g ml79 g E3G-L77 E278-E2-04-X E3G-ML79T-G
Text: sensing object. Easy Optimum Sensing Distance Adjustments Select either transistor ( NPN /PNP , sheet Output Circuit Diagram NPN output Model Operating status of output transistor Light ON , Black NPN or PNP output selector * NPN output transistor Load Load current Control , output transistor ZD * NPN or PNP output selector NPN output transistor Black Control , OFF delay 0 to 5 s (adjustable) Pre-wired Connector type Distancesetting - Model NPN


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PDF F502-EN2-04 E39-L129-G E3G-MR19-G) E39-L129-G) E278-E2-04-X transistor PNP A124 EQUIVALENT transistor PNP A124 E3G-R13-G E3G-R17-G E3G-MR19-G E3G-MR19T-G e3g ml79 g E3G-L77 E278-E2-04-X E3G-ML79T-G
npn 1000V 100a

Abstract: D7ST1008 1S697 D7ST100805 D7ST1010 D7ST1012 50c020
Text: ) 925-7272 NPN Power Switching Transistors 80-120 Amperes/1000 Volts m Marking - D7ST1008/1010/1012, 1000 Volts Outline Drawing D7ST1008/1010/1012 NPN Power Switching Transistors 80-120 Amperes/1000 , part number you desire from thé table—i.e. a D7ST100805 describes, a disc package transistor rated , . B .121 .171 3.07 4.34 4>Bi .097 . 122 .246 3.10 ,307 .317 7.80 8.05 D 1.824 1.99 46.3 50.55 , ., Hlllls Street, Youngwood, Pennsylvania 1S697 (412) 925-7272 D7ST1008, D7ST1010, D7ST1012 NPN Power


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PDF 7214t21 T-33-15 D7ST100& D7ST1010, D7ST1012 Amperes/1000 D7ST1008/1010/1012, D7ST1008/1010/1012 D7ST1012 npn 1000V 100a D7ST1008 1S697 D7ST100805 D7ST1010 50c020
A 933 S transistors

Abstract: relay array driver GENESIS 6000 LB 122 NPN cherry opto npn 8 transistor array chip die npn transistor DC linear regulator 5A circuits pnp 8 transistor array 2 amp triac driver opto
Text: –¡ a a a 0 a p a á a q ° ■p ° □ oIdEo dSqEd a POWER NPN Figure 1A TYPICAL POWER TRANSISTOR CURVES Ta=25°C r^T -ÍB=10m/s 'If lB =5mA 1 2 3 4 5 Vce{V) Figure 1B , (Figure 1A). The multichip array package contains 2 power NPN transistors, capable of sinking 2.5A each or , requiring up to 314 small and medium current NPN and PNP transistors (see Tabfe 1). With the flexibility , shutdown can also be included on chip. POWER TRANSISTOR CHARACTERISTICS Absolute Maximum Ratings BVceo


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PDF 0001b31 A 933 S transistors relay array driver GENESIS 6000 LB 122 NPN cherry opto npn 8 transistor array chip die npn transistor DC linear regulator 5A circuits pnp 8 transistor array 2 amp triac driver opto
4n33 and 4n35

Abstract: 4N27W 4N36 4N35 4N33 4N32 4N31 4N30 4N29 4N28
Text:  1-22 Max Ratings @ T/ = 25°C Coupled Characteristics Transistor Diode Min , 100 10 10 4N37<4> Trans 300 — 30 6.0 60 1.5 100 10 10 Nota« 1. Standard Transistor output 2. High-speed transistor output guaranteed 2.0 na max tr and tf with 100 il R^ 8.0 ms typ at 1 kSi RL 3. CTR guaranteed with transistor in saturation 4. JEDEC registered data and conditions 5. CTR typ at 1.0 mA » 40% 1-23 Couplers (Cont'd) Coupled Characteristics Input Diode Characteristic» Output Transistor


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PDF 4N27W 4n33 and 4n35 4N36 4N35 4N33 4N32 4N31 4N30 4N29 4N28
1997 - BU2708AF

Abstract: BU2708DF transistor 45 f 122
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a , specification Silicon Diffused Power Transistor BU2708DF THERMAL RESISTANCES SYMBOL PARAMETER , Switching times (line deflection circuit 16 kHz) ts tf PARAMETER ICsat = 4 A; LC = 1 mH; CFB = 12.2 nF; VCC = 120 V; IB(end) = 0.8 A; LB = 6 µH; -VBB = 4 V; -IBM = ICM/2 Turn-off storage time


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PDF BU2708DF BU2708AF BU2708DF transistor 45 f 122
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