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LA6324NM-MPB-E ON Semiconductor Rochester Electronics 704 - -

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LA6324NM datasheet (4)

Part Manufacturer Description Type PDF
LA6324NM Sanyo Semiconductor High-Performance Quad Operational Amplifier Original PDF
LA6324NM Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
LA6324NM-MPB-E On Semiconductor LA6324N - High Performance Quad Operational Amplifier Original PDF
LA6324NM-TLM-E On Semiconductor LA6324NM - High Performance Quad Operational Amplifier Original PDF

LA6324NM Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
LA6324N

Abstract: LA6324NM 3003B MFP14 35100k
Text: No.N 2 7 0 4 C No.N2704B LA6324N LA6324NM LA6324N, LA6324NM 4IC DC , mW LA6324NM 330 mW Topr -3085 Tstg -55125 AV O2407 MS /N2095MHN/O087TS 8-9996 No.2704-1/5 LA6324N, LA6324NM /Ta=25,VCC=5.0V min , 1 7 7.62 6.4 1 14 8 0.63 10.0 19.0 14 (1.88) [ LA6324NM ] (1.19 , [LA6324N] Pd max - Ta 400 [ LA6324NM ] 720 600 330 300 400 200 288 132 100


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PDF N2704B LA6324N LA6324NM LA6324N O2407 /N2095MHN/O087TS LA6324NM 3003B MFP14 35100k
2013 - Not Available

Abstract: No abstract text available
Text: Ordering number : ENN2704C Monolithic Linear IC LA6324N LA6324NM High-Performance Quad Operational Amplifier Overview The LA6324 consists of four independent, high-performance, internally phase , power dissipation Pd max -0.3 to +32 LA6324N LA6324NM V 720 mW 330 mW , Dimensions unit : mm 3003B [LA6324N] unit : mm 3034B [ LA6324NM ] 19.0 10.0 8 8 1 7 , Allowable power dissipation, Pd max - mW Allowable power dissipation, Pd max - mW 800 LA6324NM


Original
PDF ENN2704C LA6324N LA6324NM LA6324
2004 - LA6324N

Abstract: 6324N 3003B
Text: Ordering number : ENN2704C LA6324N LA6324NM Overview Monolithic Linear IC High-Performance Quad Operational Amplifier The LA6324 consists of four independent, high-performance , max VID VIN max Pd max LA6324N LA6324NM Operating temperature Storage temperature Topr Tstg Conditions , [ LA6324NM ] 8 7.62 6.4 10.0 14 1 7 1 7 0.25 0.51min 3.4 3.65max (3.0) 0.35 1.27 , 280 240 200 160 120 80 40 0 -40 -30 -20 Allowable power dissipation, Pd max - mW LA6324NM 720


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PDF ENN2704C LA6324N LA6324NM LA6324 6324N 3003B
2006 - LA6324N

Abstract: 6324N la6324nm
Text: Ordering number : ENN2704C LA6324N LA6324NM Overview Monolithic Linear IC High-Performance Quad Operational Amplifier The LA6324 consists of four independent, high-performance , max VID VIN max Pd max LA6324N LA6324NM Operating temperature Storage temperature Topr Tstg Conditions , : mm 3003B [LA6324N] 19.0 14 8 0.63 4.4 0.1 (1.5) (1.19) unit : mm 3034B [ LA6324NM ] 8 7.62 6.4 , dissipation, Pd max - mW LA6324NM 0 30 60 85 90 120 0 20 40 60 80 85 100


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PDF ENN2704C LA6324N LA6324NM LA6324 6324N la6324nm
2006 - LA6324N

Abstract: 6324N LA6324 3003B LA6324NM
Text: Ordering number : ENN2704C Monolithic Linear IC LA6324N LA6324NM High-Performance Quad Operational Amplifier Overview The LA6324 consists of four independent, high-performance, internally phase , Pd max -0.3 to +32 LA6324N LA6324NM V 720 mW 330 mW Operating temperature , : mm 3034B [ LA6324NM ] 19.0 10.0 8 8 1 7 4.4 0.25 1 2.54 0.48 1.7max , dissipation, Pd max - mW Allowable power dissipation, Pd max - mW 800 LA6324NM 320 280 240 200


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PDF ENN2704C LA6324N LA6324NM LA6324 LA6324N 6324N 3003B LA6324NM
LA6324N

Abstract: No abstract text available
Text: Ordering number : ENN2704C Monolithic Linear IC LA6324N LA6324NM High-Performance Quad Operational Amplifier Overview The LA6324 consists of four independent, high-performance, internally phase , power dissipation Pd max -0.3 to +32 LA6324N LA6324NM V 720 mW 330 mW , Dimensions unit : mm 3003B [LA6324N] unit : mm 3034B [ LA6324NM ] 19.0 10.0 8 8 1 7 , max - mW 800 LA6324NM 320 280 240 200 160 120 80 40 0 -40 -30 -20 0 20 40


Original
PDF ENN2704C LA6324N LA6324NM LA6324 LA6324N
Not Available

Abstract: No abstract text available
Text: Ordering number : ENN2704C Monolithic Linear IC LA6324N LA6324NM High-Performance Quad Operational Amplifier Overview The LA6324 consists of four independent, high-performance, internally phase , power dissipation Pd max -0.3 to +32 LA6324N LA6324NM V 720 mW 330 mW , Dimensions unit : mm 3003B [LA6324N] unit : mm 3034B [ LA6324NM ] 19.0 10.0 8 8 1 7 , mW 800 LA6324NM 320 280 240 200 160 120 80 40 0 -40 -30 -20 0 20 40 60


Original
PDF ENN2704C LA6324N LA6324NM LA6324
1998 - LA6324N

Abstract: 6324N
Text: = SANYO : DIP14 unit : mm 3034A-MFP14 [ LA6324NM ] SANYO : MFP14 Any and all SANYO , dissipation Pd max V LA6324N 720 mW LA6324NM 330 mW Operating temperature Topr


Original
PDF EN2704B LA6324N, 6324NM LA6324 003A-DIP14 LA6324N] LA6324N 6324N
1998 - LA6324N

Abstract: 6324N LA6324 MFP14 LA6324NM
Text: Ordering number: EN2704B Monolithic Linear IC LA6324N, 6324NM High-Performance Quad Operational Amplifier Package Dimensions unit : mm 3003A-DIP14 [LA6324N] 14 0.25 7.62 6.4 8 1 7 3.0 Features . No phase compensation required . Wide operating voltage range: 1.98 2.54 0.48 1.2 SANYO : DIP14 unit : mm 3034A-MFP14 [ LA6324NM ] 14 0.25 7.62 , dissipation Pd max V LA6324N 720 mW LA6324NM 330 mW Operating temperature Topr


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PDF EN2704B LA6324N, 6324NM 003A-DIP14 LA6324N] DIP14 034A-MFP14 LA6324NM] 65max 51min LA6324N 6324N LA6324 MFP14 LA6324NM
1997 - 6324N

Abstract: LA6324N LA6324 LA6324NM MFP14
Text: typ/VCC = +5 V, RL = unit : mm 3034A-MFP14 [ LA6324NM ] SANYO : MFP14 Specifications , LA6324NM 330 mW Operating temperature Topr ­30 to +85 °C Storage temperature Tstg


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PDF EN2704B LA6324N, 6324NM LA6324 003A-DIP14 6324N LA6324N LA6324NM MFP14
LA6520

Abstract: LA64620 LA6500 LA6358NS LA6458M LM324M LM339 LM358M LA6358 tl083
Text: c o n tin u e d fro m preceding p a g e . SANY O S E M I C O N D U C T O R CO RP 32E D TTTTOTb 0007572 h , I T-9Ô-JÛ . \ P P tr . Type Number ^ 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 LA6082M LA6082S LA6083D LA6083M LA6324N LA6324NM LA6358N LA6358NM LA6358NS LA64S8D LA6458M LA6458S LA64620 LA6462M LA6462S LA6500 LA6301 LA6510 Case J Package Pins & Package' -i ' Circuit Functions & Applications v i 1'.- M ain Specifications' ; > : . ' v ~1 SIP DIP Varialioiij 8 9 14 14 14 14


OCR Scan
PDF LA6082M LA6082S LA6083D LA6083M LA6324N LA6324NM LA6358N LA6358NM LA6358NS LA64S8D LA6520 LA64620 LA6500 LA6458M LM324M LM339 LM358M LA6358 tl083
C4558

Abstract: LA6510 LA6458M TRANSISTOR BTL POWER AMPLIFIER LA6458D LA6358NS LA6358N LA6358NM LA6358 16F TRANSISTOR
Text: Continued ire m previou page Package Device Type MFP DIP M FP S IP DIP M FP S IP DIP MFP S IP T 0220 TP Number of Drawing pins and numbei configuration 14 8 8 9 8 8 9 8 8 9 5H 5H 3034A 3001B 3032B 3017B 3001B 3032B 3017B 3001B 3032B 3017B 3079 3103 Description Features LA6324NM LA6358N LA6358NM LA6358NS LA6458D LA6458M LA6458S LA6462D LA6462M LA6462S LA6500 LA6501 Quad high-performance operational amplifier Dual high-performance operational amplifier Dual high-performance


OCR Scan
PDF 3001B 3032B 3017B LA6324NM C4558 LA6510 LA6458M TRANSISTOR BTL POWER AMPLIFIER LA6458D LA6358NS LA6358N LA6358NM LA6358 16F TRANSISTOR
6324N

Abstract: LA6324N la6324nm
Text: Allowable power dissipation Symbol Vc c max V|D V|n max Pd max LA6324N LA6324NM Operating temperature


OCR Scan
PDF 2704B LA6324N, 6324NM 6324N LA6324N la6324nm
Not Available

Abstract: No abstract text available
Text: -40 -30 -20 Allowable power dissipation, Pd max - mW LA6324NM 0 30 60 85 90 120


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PDF ENN2704C LA6324N LA6324
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