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2002 - l0203

Abstract: E4 mark IDT74LVCH16244 idt74lvc245 IDTQS3861 IDT74FCT163244 IDTQS3245 L0203-10 IDTQS3384 IDT74LVCH16245
Text: CHANGE NOTICE (PCN) PCN #: L0203-10 DATE: April 15, 2002 Product Affected: Please see attachment for the , (PCN) ATTACHMENT - PCN #: L0203-10 PCN Type: Data Sheet Change: Detail of Change: Fab Site Change , , Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE (PCN) ATTACHMENT - PCN #: L0203-10 Part , , CA - 95054 PRODUCT/PROCESS CHANGE NOTICE (PCN) ATTACHMENT - PCN #: L0203-10 Part Number , - PCN #: L0203-10 Old Stepping (Fab 2) IDT74ALVCHR162269 IDT74ALVCHR16260 IDT74ALVCHR16270


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PDF L0203-10 l0203 E4 mark IDT74LVCH16244 idt74lvc245 IDTQS3861 IDT74FCT163244 IDTQS3245 IDTQS3384 IDT74LVCH16245
2002 - l0203

Abstract: No abstract text available
Text: 45/0 45/0 3/0 3/0 3/0 10 /0 Page 3 of 3 Integrated Device Technology


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PDF L0203-09 productio15TT l0203
2002 - l0203

Abstract: No abstract text available
Text: /0 45/0 3/0 3/0 3/0 10 /0 74ALVCF162835 74ALVCHS162830 Expected 5/31/02 CSP2510 Expected 5/31/02 116/0 5/0 45/0 45/0 3/0 3/0 3/0 10 /0 Characterization Data: Characterization data is available upon


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PDF L0203-03 IDT74ALVCF162835 IDT74ALVCHS162830, IDTCSP2510 L0203-03 QLG-02-07/QLG-02-08 74ALVCF162835 74ALVCHS162830 CSP2510 l0203
2004 - l0203

Abstract: IDT Package standard Marking 54FCT521ADB 54FCT521DB 74FCT521 an 147 5962-8854301RA kb-04 20-PIN IDT marking
Text: M CDIP 20 x8/x9/ x10 Comparator FCT Octals x8/9/ 10 Active N A 5.0 V M LCC 20 x8/x9/ x10 Comparator FCT Octals x8/9/ 10 Active N B 5.0 V M CDIP 20 x8/x9/ x10 Comparator FCT Octals x8/9/ 10 Active N B 5.0 V M LCC 20 x8/x9/ x10 Comparator FCT Octals x8/9/ 10 Active N Standard 5.0 V M CDIP 20 x8/x9/ x10 Comparator FCT Octals x8/9/ 10 Active N Standard 5.0 V M


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PDF 74FCT521 20-PIN 54FCT521ADB 54FCT521ALB 54FCT521BDB 54FCT521BLB 54FCT521DB 54FCT521LB l0203 IDT Package standard Marking 54FCT521ADB 54FCT521DB 74FCT521 an 147 5962-8854301RA kb-04 20-PIN IDT marking
l0203

Abstract: No abstract text available
Text: No file text available


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PDF 07-SEP-94 2122/duq2 l0203
1999 - R0207

Abstract: NET2888 R0210 c0204 osc48 SX28AC c0209 C0208 l0203 NET2890
Text: USBCS# RD# WR# A[4.0] RB0 RB1 RB2 RB3 RB4 RB5 RB6 RB7 9 10 11 12 13 15 16 17


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PDF NET2888/NET2890 SX28AC NET2888 NET2890 SX28AC NET2888 NET2890 NET2888/NET2890. R0207 R0210 c0204 osc48 c0209 C0208 l0203
PM554

Abstract: abb PM571 PM554-T r2001 TRANSISTOR PM564 AC500 plc PM564-T AC500 ABB PM554 PM582
Text: 0.10 V: 10 bits 0.10 V, 0.20 mA, 4.20 mA 24 V DC 1TNE 968 900 R1100 PM564-R * 6/6/2/1 24 V DC Relay, 24 V DC, 120/240 V AC, 2 A 0.10 V: 10 bits 0.10 V, 0.20 mA, 4.20 mA 24 V , Export Department 10 , rue Ampère Z.I. - B.P. 114 F-69685 Chassieu cedex / France Tel. : +33 (0)4 7222


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PDF AC500-eCo: AC500-eCo AC500 D-69123 L0203 PM554 abb PM571 PM554-T r2001 TRANSISTOR PM564 AC500 plc PM564-T ABB PM554 PM582
Not Available

Abstract: No abstract text available
Text: 15 — B4 AS— 7 14 — B5 A7— 8 13 — B6 AS— 9 12 — B7 GND— 10 11 , or A 2 12 2 10 ns A or B to Bor A 2 12 2 10 ns tpLH


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PDF DM54ALS5620/DM74ALS5620 ALS620
2002 - URB-1001

Abstract: NET2270 C0215 L0202 TP0204 C0208 KDS Crystals 30MHz TP0203 pioneer pll LD11
Text: Revision 1.0 1.1 2.0 3.0 3.1 3.2 3.3 Issue Date February 6, 2001 March 21, 2001 April 30, 2001 , ) . 66 8.1.5 Get Device Qualifier ( 10 Bytes , . 88 10 MECHANICAL DRAWING , 10 NetChip Technology, Inc., 2002 335 Pioneer Way, Mountain View, California 94041 TEL (650 , AVDD LA[5:1] 3.3VCCA 57 17 32 10 42 62 51 3.3VCC ANALOG GROUND


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PDF NET2270 S64GB-50-9EU-1 URB-1001 C0215 L0202 TP0204 C0208 KDS Crystals 30MHz TP0203 pioneer pll LD11
2007 - 74ls74apc

Abstract: HD74ls04p 74LVC1G04ady8 semiconductor AZ431BZ-AE1 HCF4060BE HEF4093BP datasheet free download ne5334 hd74hc132p dm74ls47n
Text: 24 24 24 24 24 24 24 24 24 24 48 48 48 48 74ABT646CMTCX - 74ABTH162244DL-T 10


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2005 - c2240 transistor

Abstract: c5129 c5088 C2335 C5936 c2166 transistor c2335 r c2165 C5928 datasheet c2240 transistor
Text: 10 C/C+ Language 10.1 , . 6.0, or later suppresses output of the union of messages specified by the nomessage options. 10


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PDF REJ10B0161-0100 H8/300 Unit2607 c2240 transistor c5129 c5088 C2335 C5936 c2166 transistor c2335 r c2165 C5928 datasheet c2240 transistor
2002 - mt3514

Abstract: mt2502 KBPC606 ASEA+EG+10 B250C500 b40c3700 B40C500 B500C1000 B80-C zener+diode+phc+10
Text: 40 30 30 30 30 30 5.0 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 0.8 AMPERES / WOB , 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 0.8 0.8 0.8 0.8 0.8 0.8 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / WOB B40C1000 B80C1000 B125C1000 B250C1000 B380C1000 B500C1000 100 200 300 600 900 1200 1.0 1.0 1.0 1.0 1.0 1.0 50 50 50 50 50 50 45 45 45 45 45 45 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 AMPERES / DIL DF005 DF01 DF02 DF04 DF06 DF08 DF10 50 100 200 400 600


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PDF B40C800 B80C800 B125C800 B250C800 B380C800 B500C800 45osed KBPC5000GS KBPC5001GS KBPC5002GS mt3514 mt2502 KBPC606 ASEA+EG+10 B250C500 b40c3700 B40C500 B500C1000 B80-C zener+diode+phc+10
2003 - GFM 64A

Abstract: GDV 64A GFM 85A 625 GFG SA40A GFM 57, TVS 33 TVS SMC tvs SMC MARKING GHR 26A 79mcc
Text: 53.6 61.6 58.8 68.2 65.1 74.8 71.4 82.5 78.8 90.2 10 10 10 10 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.50 5.80 6.05 6.40 6.63 7.02 7.37 7.78 , 37 38 34 35 32 33 29 30 27 28 25 26 23 24 21 22 18 19 17 18 15 16 14 14.5 12.5 13 11.5 12 10 11 9.0 , 143 137 165 158 176 168 187 179 198 189 220 210 242 231 275 263 330 315 385 368 440 420 1.0 1.0 1.0


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PDF DO-41 P4KE10 P4KE10A P4KE11 P4KE11A P4KE12 P4KE12A P4KE13 P4KE13A P4KE15 GFM 64A GDV 64A GFM 85A 625 GFG SA40A GFM 57, TVS 33 TVS SMC tvs SMC MARKING GHR 26A 79mcc
2003 - mb101

Abstract: No abstract text available
Text: DB103 200 40 DB104 400 40 DB105 600 40 DB106 800 40 DB107 1000 40 1.0 HDB101G 50 40 HDB102G 100 40 , 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 0.5 0.5 0.5 0.5 0.5 0.5 0.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.0 1.0 1.0 1.3 1.7 1.7 1.7 1.0 1.0


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PDF MB05M MB10M DB101 DB102 DB103 DB104 DB105 DB106 DB107 HDB101G mb101
2011 - Not Available

Abstract: No abstract text available
Text: -8 RG1676-9 RG1676- 10 RG1676-11 RG1676-12 RG1676-13 RG1676-14 RG1676-15 RG1676-16 RG1676-17 RG1676 , ® RESISTANCE TOLERANCE OHMS % 100 100 10 220 220 100 100 100 220 220 220 220 220 220 220 220 100 220 220 100 10 220 220 220 220 47 47 47 200 100 22 100 50 220 220 220 100 50 50 15 33 15 47 100 220 10 220 100 100 470 220 22 75 47 10 50 100 220 220 220 68 220 50 220 10 820 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10


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PDF RG1676 RG1676 RG1676-1 RG1676-2 RG1676-3 RG1676-4 RG1676-5 RG1676-6 RG1676-7 RG1676-8
2000 - SR1K-2

Abstract: SR1K2 capacitor K460 SR2S14 Z5U Metal Oxide Varistor 155Z sr2k20
Text: CECC 42 000 203 10 /00 SIOV Metal Oxide Varistors HICAP Maximum ratings (TA = 85 °C) Type , 23/­ 0 + 23/­ 0 + 23/­ 0 Max. clamping voltage v i V A 40 5,0 40 10 ,0 40 5,0 40 5,0 40 10 ,0 40 10 ,0 40 10 ,0 58 58 58 58 58 58 58 5,0 10 ,0 5,0 5,0 5,0 10 ,0 10 ,0 C ± 20% Derating V /I , 275 274 274 274 275 275 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 ± 10 New ordering codes implemented (refer to chapter Varistor Type Cross-Reference List) 1) at 0,5 V 204 10 /00 SIOV Metal Oxide


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2010 - CL10B105KA8NNN

Abstract: CL31A106KOHNNN CL05B224KQ5NNN
Text: 1.25±0.10 2.00±0.15 2.00±0.20 1.25±0.15 1.25±0.20 5 5 8 C F Q 0.2+0.15/-0.1 10 , High Capacitance Table (X5R) Capacitance (uF) Size(mm) Vr(V) 4 6.3 0402(1005) 10 16 25 4 6.3 10 0603(1608) 16 25 50 4 6.3 10 0805(2012) 16 25 50 6.3 10 1206(3216) 16 25 50 6.3 1210(3225) 10 16 25 0.1 0.22 0.47 1 2.2 4.7 10 22 47 , ) 6.3 0402(1005) 0.3 1 2.2 4.7 10 22 33 47 X6S 10 Part Numbering


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PDF CL31F226ZPHNNN CL31F226ZQHNNN CL32F106ZAHLNN CL32F106ZOELNN CL32F226ZPJNNN CL32F226ZPULNN CL32F476ZQJNNN CL32F107ZQJNNN CL10B105KA8NNN CL31A106KOHNNN CL05B224KQ5NNN
2005 - SMAJ15CA

Abstract: SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C
Text: with a 10 /1000µs waveform * Optimized for LAN protection applications * Low clamping * Very fast , 150 °C Peak Pulse Current on 10 /1000µs waveform (Note 1, Fig. 1) Operating Junction and , . IT (mA) VWM (V) Maximum Reverse Leakage @ VWM IR (µA) SMAJ5.0C 6.40 7.82 10 5.0 1600 41.7 SMAJ5.0CA 6.40 7.25 10 5.0 1600 43.5 9.2 SMAJ6.0C 6.67 8.15 10 6.0 1600 35.1 11.4 SMAJ6.0CA 6.67 7.37 10 6.0 1600


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PDF 188CA DO-214AC) UL94V-O SMAJ78CA SMAJ85A SMAJ188CA SMAJ15CA SMAJ24CA SMAJ10C SMAJ10CA SMAJ11C SMAJ11CA SMAJ12C SMAJ12CA SMAJ13C
2005 - SMCJ10C

Abstract: SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C
Text: * * * * * 0.305(7.75) 0.030(0.76) * 1500W peak pulse power capability with a 10 /1000µs waveform , unless otherwise specified. Rating Symbol Peak Pulse Power Dissipation on 10 /1000ms waveform Peak Pulse Current on 10 /1000µs waveform (1) (2) (1) Typical thermal resistance , Junction to , (V) Maximum Reverse Leakage @ VWM IR (µA) SMCJ5.0C 6.40 7.82 10 5.0 2000 156.3 SMCJ5.0CA 6.40 7.25 10 5.0 2000 163.0 9.2 SMCJ6.0C 6.67 8.15


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PDF 188CA DO-214AB) UL94V-O SMCJ10C SMCJ10CA SMCJ11C SMCJ11CA SMCJ12C SMCJ12CA SMCJ13C
TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Text: 50 50 50 50 50 50 50 50 50 Vebo (V) 10 10 10 10 10 10 6 6 10 10 10 10 5 6 5 5 10 6 6 6 6 5 5 5 5 6 6 6 10 10 10 10 5 6 (mA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 500 , 250 250 250 250 250 250 200 250 200 250 200 250 200 250 Vce (V) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 1 0 10 1 0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Ic te (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5


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PDF T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
2004 - BCR141

Abstract: BCR141F BCR141L3 BCR141S BCR141T
Text: 50 Emitter-base voltage VEBO 10 Input on voltage Vi(on) 30 Collector current , = 40 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off , Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz , 10 2 10 3 - 10 2 IC h FE mA 10 1 10 1 10 0 -1 10 10 0 10 1


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PDF BCR141. BCR141/F/L3 BCR141T/W BCR141S/U EHA07184 EHA07174 BCR141 BCR141F BCR141L3 BCR141S BCR141 BCR141F BCR141L3 BCR141S BCR141T
1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Text: 75 125 50 55 25 70 23 23 90 100 75 60 75 75 75 100 90 100 100 100 100 100 125 20 25 10 1,0 1.0 1.0 1.0 1.0 5 5 7.5 4 3 50 30 10 100 6 10 10 10 25 3 1.0 1.0 1.5 1.5 1.0 5 25 12.7 12.8 3 5 6 35 1000 3 3 10 iö 1.0 1.0 1.0 1.0 1.0 410 1500 500 800 200 50 50 100 50 20 1.0 1.0 1.0 1.0 1.0 5 2.5 5 25 5 80 1500 150 100 10 20 50 50 50 10 1.0 1.0 1.0 1.0 1.0 5 5 4 5 15 7 800 500 500 300 10 iso 150 150 30 1.0 l.Q 1.0 1.0 1.0 15 3.6 4 5 5 300 300 500 800 600 30 75 75 100


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PDF 1N34A 1n38a 1n38b 1n52a 1N55B 1n56a 1n57a 1n58a 1n60a 1n63a 1Nu5 IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
SMBJ15A

Abstract: SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A SMBJ12A SMBJ28A
Text: Power : 600 W FEATURES : * 600W peak pulse power capability with a 10 /1000µs waveform * Excellent , Peak Pulse Power Dissipation on 10 /1000μs waveform Peak Pulse Current on 10 /1000μs waveform (1 , 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 , 50 10 10 5.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 62.5 65.2


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PDF TH97/2478 TH09/2479 TH07/1033 DO-214AA) UL94V-0 10/1000ms. SMBJ15A SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A SMBJ12A SMBJ28A
2003 - BAS170W

Abstract: BAS70 BAS70-02L BAS70-02W BAS70-04S marking 74s Puls BAS70-04 BAS70-04T BAS70-04W
Text: - 0.1 µA DC Characteristics Breakdown voltage V(BR) I(BR) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA , rf - 34 - - - 100 ps Forward voltage matching1) VF IF = 10 mA AC Characteristics Diode capacitance VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz , = f = 10 kHz BAS 70W/BAS 170W 2.0 CT f = 1MHz (VR) EHB00044 pF (IF


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PDF BAS70. BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W BAS70-04S BAS170W BAS70 BAS70-02L BAS70-02W BAS70-04S marking 74s Puls BAS70-04 BAS70-04T BAS70-04W
2003 - Not Available

Abstract: No abstract text available
Text: ) = 10 µA Reverse current IR VR = 50 V Forward voltage mV VF IF = 1 mA 300 375 410 IF = 10 mA 600 705 750 IF = 15 mA 750 880 1000 - - 20 , )  IF = 10 mA VF AC Characteristics Diode capacitance pF VR = 0 , f = 1 MHz Forward resistance IF = 10 mA, f = 10 kHz Charge carrier life time  IF = 25 mA 1 rr VF is the , . / BAS170W Forward resistance rf = f = 10 kHz BAS 70W/BAS 170W 2.0 CT  f = 1MHz (VR


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PDF BAS70. BAS170W BAS70-02L BAS70-02W BAS70 BAS70-04 BAS70-04T BAS70-04W BAS70-04S
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