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Part Manufacturer Description Datasheet Download Buy Part
BQ4802LYDSH Texas Instruments 1 TIMER(S), REAL TIME CLOCK, PDSO28, PLASTIC, SOP-28
BQ4802LYDW Texas Instruments Y2K-Compliant Parallel RTC with CPU Supervisor and External NVSRAM Control, 3V Vcc 28-SOIC 0 to 70
BQ4802LYDWG4 Texas Instruments Y2K-Compliant Parallel RTC with CPU Supervisor and External NVSRAM Control, 3V Vcc 28-SOIC 0 to 70
BQ4802LYDWRG4 Texas Instruments Y2K-Compliant Parallel RTC with CPU Supervisor and External NVSRAM Control, 3V Vcc 28-SOIC 0 to 70
BQ4802LYDWR Texas Instruments Y2K-Compliant Parallel RTC with CPU Supervisor and External NVSRAM Control, 3V Vcc 28-SOIC 0 to 70

L-934EB/2LYD-RV(L) Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2007 - MIL-C-20

Abstract:
Text: . Cap range Figure 1 L W L.D. BX (+15-15% no voltage, +15-25 RV ) MIL-C-39014 50V - , , +15-25 RV ) MIL-C-39015 50V - 200V 10pF to 1µF L W L.D. 1.250 Min. L.S , RV ) L.D. L.S. Figure 3 Qual level T L T L W 1.250 Min. Axial Leads , T L BX (+15-15% no voltage, +15-25 RV ) MIL-C-123 50V - 200V MIL-C-123 50V - 100V , (.045) Max. W L T 31.7 (1.25) Min. L.D. W L T 31.7 (1.25) Min. L.S. Style


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PDF 220pF MIL-C-123 30ppm/Â 270pF 120nF MIL-C-20
C 56 ph diode

Abstract:
Text: IGBT PK:9 =T Q BR SK L =' Q WV SK XV L @ RV L [BV P =T Q @ RV SK @V _' =' Q BR SK RX L =' Q WV SK L @ RV L CCR L RV L ] PH: Q V P typ. =T Q @ RV SK(8/52&Dc P3 Q P:K min. VAe @A@ P =T Q , =T Q @ RV SK CV WAB L _K RV L 1/k1. Q eBV Lk_' :) PKKQXVVP


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PDF SK50GH12T4T C 56 ph diode PH 21 DIODE ph-12 diode semikron SKa 6/20
Not Available

Abstract:
Text: 100pF (V P , RV -8 5 L , -10L, -12L, -85LL, 10LL, -12LL) Fig. 1 Output load C L = 30pF (V P , RV , MITSUBISHI LSIs M5M51008VP, RV -70L,-85L,-10L,-12L -70LL,-85LL,-10LL,-12LL 1048576-BIT(131072-W0RD BY 8-BIT)CM0S STATIC RAM DESCRIPTION The M 5M 51 00 8V P, RV are 1048576-bit C M O S static RAM s , , RV are packaged in a 32-pin thin small outline package which is a high reliability and high density , As « « 13«— ö l m — Aio ¡g « — s i 2 3 — Dûs —»13 A ,3 — E W


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PDF M5M51008VP RV-70L -70LL -85LL -10LL -12LL 1048576-BIT 131072-W0RD 131072-word
2008 - A2610

Abstract:
Text: Z 1 6 1 1 R e s e rv e d G N D 1 k W 5 X Y _ L E D R E F A 2 N 3 9 0 6 2 , k W S h ie ld D D 3 U S B + R e s e rv e d R B D P I_ L O W _ H IG H : N /C - 8 , S h ie ld U S B D D 3 U S B + R e s e rv e d R B D P I_ L O W _ H IG H : N /C - 8 , .1 k W R e s e rv e d R e s e rv e d M B D P I_ L O W _ H IG H : N /C - 8 0 0 d p i G N D , 1 2 .2 m F A 2 6 1 0 /A 2 6 2 0 6 M H z L B R e s e rv e d R B 5 .1 k W 6 1


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PDF HT82M28A A2610, A2620, A5020, A5050 A2610 A2610 DIP a2610 optical a5020 e Sensor A5020 A2610 DIP 8 sensor A2620 a2610 optical sensor a505-0
Not Available

Abstract:
Text: current M5M51008AFP, VP, RV -85VLL M5M51Q08AFP, VP, RV -10VLL - 22U _S7 Ë j - 2T]*-*DQ8‘ fD Q l < DATA I N P U T S / < D Q 2 -< OUTPUTS [ 0 0 3 , FEATURES M5M51008AFP, VP, RV -85VL M5M51008AFP, VP, RV -10VL - A l type - A2 IN P U T S * AB A3 small outline package w , MITSUBISHI LSIs M5M51008AFP,VP, RV -85VL,-1 OVL, -85VLL,-10VLL 1048576-BIT(131Q72-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M 5M 51008A FP , VP, RV are a 1 0 4 8 5 7 6 -b it CMOS static RAM


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PDF M5M51008AFP RV-85VL -85VLL -10VLL 1048576-BIT 131Q72-WORD 1008A M5M51008AFPV
MIL-C-20

Abstract:
Text: . Cap range Figure 1 L W L.D. BX (+15-15% no voltage, +15-25 RV ) MIL-C-39014 50V - , -39014 200V 1pF to 18pF Figure 4 Cap range BX (+15-15% no voltage, +15-25 RV ) T L T L , -39015 T L.S. Figure 1 L W L.D. BX (+15-15% no voltage, +15-25 RV ) MIL-C-39015 50V - , , +15-25 RV ) MIL-C-123 50V - 100V 270pF to 0.47µF Figure 1 L W L.D. L Figure 2 , 4 Cap range BP ±30ppm/°C T L T L BX (+15-15% no voltage, +15-25 RV ) MIL-C


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PDF 220pF 30ppm/ MIL-C-123 270pF 120nF MIL-C-20 MIL-C-39014 MILC-20 MIL-C-123 MIL-C-39014 .1uF MIL-C-39015 skycap leaded ceramic capacitor CECC Capacitor SR50
Not Available

Abstract:
Text: loads.Fig. 1, Cl = 10OpF ( FP, VP, R V -1 5 V L ,-1 5 V L L ) 777" Cl = 30pF ( FP, VP, RV - 1 2VL, - 1 , bE M 'iö E S 0 0 2 4 Elöfi M 5 M b5 b ■5 1 0 0 l'IIT l 8 A F MITSUBISHILSIs P , V P , R V - - 1 1 2 2 V V L L L , , - 1 - 5 1 5 V L V L , L 1048576-BIT(131072-WORD BY 8-BIT)CM0S STATIC RAM DESCRIPTION The M5M51008AFP, VP, RV are a 1048576-bit CMOS static RAM organized as 131072


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PDF 1048576-BIT 131072-WORD M5M51008AFP, M5M51008AVP,
2008 - a2610

Abstract:
Text: 1 0 .0 1 m F 1 k W S h ie ld D D 3 U S B + 3 3 p F L B R e s e rv e d R e s e rv e d R B D P I_ L O W _ H IG H : N /C - 8 0 0 d p i G N D - 4 0 0 d p i Rev. 1.10 , + 3 3 p F 5 .1 k W R e s e rv e d L B R e s e rv e d R B D P I_ L O W _ H IG H , T L E D 2 8 2 .2 m F A 2 6 1 0 /A 2 6 2 0 6 M H z L B R B R e s e rv e d R e s e rv e d M B D P I_ L O W _ H IG H : N /C - 8 0 0 d p i G N D - 4 0 0 d p i Rev. 1.10


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PDF HT82M28A A2610, A2620, A50cation. a2610 a2610 optical a2610 optical sensor sensor A2610
F0-F15

Abstract:
Text: 0 B i t 3 - U n la tc h e d Sen se B i t 7 - L a tc h e d Se n se w id th R e se rv e d I N D X C N , INU BLANI' MO DE CNTL COL RES PORT SEL B it 3 B it 2 R S V D - R ese rv e d C O L R E S C o lo r , tp u t R E F C L K in p u t R ese rv e d for the p ix el clock is req u ired and o n ly v a lid w h e , th e D A C s are u n m o d i fied. T he 6 B IT L I N b it has no effect. R S V D - R ese rv e d P O R , lu e : 0x00 P o w e r o n V a lu e : 0x00 B it s 5 B it 0 R e se rv e d P L L E N A B - P L


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PDF RGB514 F0-F15 RGB514
Not Available

Abstract:
Text: I b S 4 'lñ 2 S DDE42Ô1 271 MITSUBISHI LSIs ■H I T ! M5M51008AFP,VP, RV -85VL,-1 , F P, VP, RV are a 1 0 4 8 5 7 6 -b it CMOS static RAM organized as 1 3 1072 word by , , RV are packaged in a 3 2 - pin thin small outline package which is a high reliability and high • — A8 ADDRESS J INPU TS ' «— A l l , density surface mount device(S M D ). Tw o types of , FEATURES Power supply current Type name M5M510G8AFP, VP, RV -85VL M5M51008AFP, VP, RV


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PDF DDE42Ã M5M51008AFP RV-85VL -85VLL 1048576-BIT 131072-WORD 1008A
MC14LC5494EVK

Abstract:
Text: e rv e d R e s e rv e d R e s e rv e d R e s e rv e d ID L A FIF O 1/2 Full S C 2 .2 to L oo p S C 4 .2 to L oo p Do Not R e a c t to IN F O 3 R e s e rv e d T T L Inp u t L e ve ls R e s e rv e d ID L C L K Speed M SB R e s e rv e d M u te B 2 on IDL R e s e rv e d M u te B1 on IDL R e s e rv e d R e , B6 B1 S n LB N o n - T ra n s R e s e rv e d Fr. V io l . C o u n t B5 BPV C ount B5 B 2 S /T LB T ra , fro m L oo p R x IN F O S ta te B1 BR12 BR13 R e s e rv e d R e s e rv e d T T L In p u t L e v e ls B


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PDF MC145474 MC145474/D) MC145474/75 C145475 C145474 MC145475 MC14LC5494EVK
B109D

Abstract:
Text: . G .R .B. 47 D 4l lW » lD r W en dcn l 1,9-V olt-H eizung dir. und ind. : RV 2 P S O U , . RV 2,4 T 3 . RL 2,4 T 4 R L 2,4 P 3 RG 2,4 D l , : .R .B. 109 D 12,6-V olt-H eizung Indirekt; RV 12 P 4000 , . G.R .B. 7 D RV 12 P 2000 RV 12 P 2001 , .G^R.B. 3 D U . G .R .B. 26 D II RV 12 P


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PDF
Not Available

Abstract:
Text: ' 97 . 2.17 MITSUBISHI LSIs M5M5512FP,VP, RV ,KV,KR -10VLL,-12VLL,-15VLL, -10VXL,-12VXL,-15VXL , application. It is ideal for the memory systems which require simple interface. Especially the M5M5512VP, RV , package), RV ,KR(reverse lead bend type package). Using both types of devices, it becomes very easy to , (max) (max) (max) M5M5512FP,VP, RV ,KV,KR-1 OVLL 100ns M5M5512FP,VP, RV ,KV,KR-12VLL 120ns M5M5512FP,VP, RV ,KV,KR-15VLL 150ns M5M5512FP,VP, RV ,KV,KR-1 OVXL 100ns M5M5512FP,VP, RV ,KV,KR


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PDF M5M5512FP -10VLL -12VLL -15VLL, -10VXL -12VXL -15VXL 524288-BIT 65536-WORD M5M5512
Not Available

Abstract:
Text: H I L S Is M5M51008VP, RV -70Lr 85Lr 10L,-12L,-70LL,-85LL,-10LL,-12LL M I T S U B I S H I ( M E , l c c 4 b I T I ì ì ■M IT I MITSUBISHI LSIs M5M51008VP, RV -70L,-85L,-10L,-12L,-70LL , , RV Symbol Parameter -70L, -7 0 L L -85L, -8 5 L L Min Min Max 70 Max , 10 10 ns (3) WRITE CYCLE M 5M 5I008VP. RV -70L, -7 0 L L -85L, -8 5 L L •10L, â , b lE D tiEMRfiSS O O m 1] ! HRS ■M I T I MITSUBISHI LSIs M5M51008VP, RV


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PDF M5M51008VP RV-70L -70LL -10LL -12LL 104857G-BIT( 1072-W0WP
Not Available

Abstract:
Text: 4 4 2 5 6 B P, J , L , V P , R V -8 L . . 385mW (max) M 5 M 4 4 2 5 6 B P, J , L , V P , RV -10L.330m W , O C O N N E C T IO N A MITSUBISHI ELECTRIC 2-85 M 5M 44256BP, J, L ,VP, RV -7L, BL, ·3 1 , FUNCTION The M5M44256BP, J, L , VP, RV provide, in addition to normal read, write, and read-modify-write , 2-86 A MfTSUBISHI ELECTRIC Y '" ".S s M 5M 44256BP, J, L , VP, RV -7L, «SI., ·101. , ? ' . ' ? ' : ' -' s M 5M 44256BP, J, L , VP, RV -7L, Sil., · 1 1 OL FAST PAGE MODE 1048S76


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PDF 104857G-BIT 62144-W 262144-word 442S6BP, 04SS76-BIT 2S2144-WORD 44256BP, 1048576-BIT 262144-m 44256BP
Not Available

Abstract:
Text: ADDRESS INPUT 57 C H IP S E L E C T t- , ^ .IN P U T 1 21 [ *- » DQ 8 - - rv w DATA IN P U T S / O , ) READ CYCLE L im its S vm bol Param eter M5M51008AP, FP, VP, RV -70L, -70LL M5M51008AP, FP , MITSUBISHI LSI:; M5M51008AP,FP,VP, RV -70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT(131Q72-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION fh s M 5 M 5 1 0 0 8 A P , FP, V P , RV u sin g are a , - C H IP S E L E C T _ b 2 IN P U T 2 2 9 l « _ W WRITE CONTROL PIN CONFIGURATION (TOP VIEW) s


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PDF M5M51008AP RV-70L -70LL -85LL -12LL 1048576-BIT 131Q72-WORD
Not Available

Abstract:
Text: M ITSUBISHI LSIs M5M44256BP,J, L ,VP, RV -7,-8,-10 FAST PAGE MODE 1 0 4 8 5 7 6 -B IT (2 6 2 1 4 4 , MITSUBISHI ELECTRIC M ITSUBISHI LSIs M5M44256BP, J, L , VP, RV -7, -8, -10 FAST PAGE MODE 1 0 4 8 S 7 6 , o f other functions, e.g., fast page mode, RAS-only The M 5 M 442 56B P , J, L ,V P , RV provide , ITSUBISHI LSIs M5M44256BP,J, L ,VP, RV -7,-8,-10 FAST PAGE MODE 1 0 4 8 5 7 6 - B IT ( 2 6 2 144-W ORD BY 4 , ITSUBISHI LSIs M 5M44256BP, J, L ,VP, RV -7, -8, -10 FAST PAGE MODE 1 0 4 8 S 7 6 -B IT (2 6 2 1 4 4 -WORD


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PDF M5M44256BP
KJ 9D

Abstract:
Text: -GEAF9D 5GDL9?= 5yx xGFL9; L J9LAF? c1=Kh DG9 rv loj5vximj5yx ,9Ph KOAL;@AF? 5GDL9 , +240UI, -GEAF9D 5GDL9?= 2= L i 1=K=L 5GDL9?= 5yx 5yx xGAD 1=KAKL9F;= P ck kjad kjv loj5vx rv , loj5vxirv mj5yxu lvf lwfkv e kwt rv loj5vximj5yx \ }A?@ K=FKALAN= \ nC5 l {GJE v 9F< kv e kw ;GFL9; L 9JJ9F?=E=FL \ zFNAJGFE=FL9D >JA=F L c1G}2 ;GEHDA9FLd \ .MLDAF=


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PDF 8BAF68F KJ 9D 8Q transistor LN-524RA 9d
2008 - led 3mm white diffused

Abstract:
Text: HOUSING LED LAMPS L -964ZM/2- RV L -130WCP/2 L -7104SA/3 L -7104SB/4 Part No. Material D (nm) Lens Type Iv (mcd) @10mA *20mA Min. Typ. View ing Angle 21/2 Dimension T-1 (3mm) Bi-Level L -964ZM/2ID- RV GaAsP/GaP 625 red diffused 8 20 60° L -964ZM/2SRD- RV GaAlAs 640 red diffused *70 *250 60° L -964ZM/2YD- RV GaAsP/GaP 588 yellow diffused 3 10 60° L -964ZM/2GD- RV GaP 568 green diffused 5 15 60° T-1(3mm) Bi-Level GaAsP/GaP L -130WCP/2EGW GaP GaAsP


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PDF L-964ZM/2-RV L-130WCP/2 L-7104SA/3 L-7104SB/4 L-964ZM/2ID-RV L-964ZM/2SRD-RV L-964ZM/2YD-RV L-964ZM/2GD-RV L-130WCP/2EGW L-130WCP/2EYW led 3mm white diffused l-7104sa
M5M51008AP

Abstract:
Text: = 0 -Vcc Si = Min cycle 1MHz Min cycle 1MHz P,FP,VP, RV - L 38 5 70 mA 15 IC C2 , 100pF( P, FP, VP, RV -85L, - 1OL, - 12L, -85LL, -10LL, -12 L L ) Cl = 30pF (P, FP, VP, RV -70L, -7 0 L L , MITSUBISHI LSIs M5M51008AP, FP, VP, RV -70L,-85L,-1 OL, -12L,-70LL,-85LL,-1 OLL,-12LL 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M51008AP, FP, VP, RV are a 1 0 4 8 5 7 6 -bit , batten/ back-up application. The M5M51008AVP, RV are packaged in a 3 2 -pin thin small outline package


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PDF M5M51008AP, RV-70L -70LL -85LL -12LL 1048576-BIT 131072-WORD M5M51008AVP, M5M51008AVP M5M51008AP M5M51008AVP M5M5I008AP
Not Available

Abstract:
Text: , , , N/A SHEET OF ^ 8 RV D E A 2 THIS DRAWI NG IS UNPUBLISHED. R E L E A S E D , T I O N . A L L 20 LOC 00 ES R 1G H T S R E S E RV E D. R E V 1S I O N S DIST , O R P O R A T I O N . A L L 20 LOC ES R 1G H T S R E S E RV E D. R E V 1S I O N S , rv D 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U , E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC ES R 1G H T S R E S E RV E D


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PDF 08APR2009 07APR2009 MAR2009 02FEB05 02LEB05
vergleichsliste

Abstract:
Text: CL 1 Hei Ra LV 1 So Hei Ra Um UCL 11 So Héi V L 4,V C 1 So Hei Ra üm 2 x RV 12 P , sisch e , ita lie n isch e usw. Röhren w erden w ir in dem kommenden H eftchen , L iste G £ t zu lösen versu ch en . R O H R EN - V E R G L E I C H S T A B E LLE T e le f unk en V slvo T ungsram : . L oew e Opta · Sator Orlon · V . V etea T riotron P h ilip s ; . RE RE RE RE , * W 4* A 18* A 23* S 4? P 207* LL416 L 43* M 4* P 4* . r - RX 406 * TP 3 * HX 406 * * AS RD


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PDF
E2123

Abstract:
Text: MITSUBISHI LSIs M5M41000BP,J, L ,VP, RV -7L,-8L,-10L F A S T PAGE MODE 1 0 4 8 5 7 6 -B IT (1 0 4 8 , OOOBP, J , L ,V P, RV -7L. . 440mW (max) L ,V P , RV -8L. . 385mW (max) L ,V P , RV -10L. 330mW (max) A D O R , MITSUBISHI LSIs M 5M 4ÎO O O BP, J, L , VP, RV -7L, -8L, - 10L F A S T PAGE MODE 1 0 4 8 5 7 6 -B IT (1 0 4 , MITSUBISHI ELECTRIC MITSUBISHI LSIs M 5 M 4 1 0 0 0 B P , J, L , VP, RV -7L, -8L, - lO L F A S T PAGE , MITSUBISHI ELECTRIC 2-21 MITSUBISHI LSIs M 5 M 4 1 0 0 0 B P , J, L , VP, RV -7L, -8L, - 10L F A S T


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PDF M5M41000BP 1048576-word E2123
V50221

Abstract:
Text: vl rv M o o o o X X en ru C/ l 4k t t 00 00 00 ru VI vû 0^ rv 00 * > . o O' ru 00 rv rv rv rv vû , » o VÛ 00 o o o o o o o o o V , X P\ X X X X rv n t ru CO CO ru ru ru Vj o vl Ul CO o CO O' L . 4k 4k , ru ro vO CO ru ru ru ro Ul o o \ O' GJ 4k o o \ O' o CO o o S Ul CO rv o o X Ul Ul L . o VO o , X O' Ul 4^ VO X O' to CO 00 ro vl 4» o O' ro 00 ru ru ro to vO X O' o vl rv vD X cn 00 L *. sO X , HEIGHT OF .100/2.54. 2. MOLDING MAT'L,POLYPROPYLENE,FLAME RETARDANT PER UL 9 4 V - 0 C D L O R *B L U E .


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PDF UNS-C17200. V50221 CI 7912 Ru 94 VO
Not Available

Abstract:
Text: IGBT PK:9 =T Q BR SK L =' Q WV SK @VV L CVV L [BV P =T Q @ RV SK @V _' =' Q BR SK @VB L =' Q WV SK L CVV L W@R L L ] PH: Q V P typ. =T Q @ RV SK(8/52&Dc P3 Q P:K min. @C @J +f =T Q @ RV SK RB @J L _K =T Q BR SK(8/52&Dc


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PDF SK100GH12T4T
Supplyframe Tracking Pixel