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2011 - kf10n60

Abstract: transistor kf10n60 813F2 mosfet KF10N60 TO-220IS kf10n60p
Text: MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + PIN CONNECTION ( KF10N60P , KF10N60F , N N A KF10N60P /F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60P O C F E G B Q I K M L J H P , above 25 SYMBOL KF10N60P VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 178 1.43 150 -55150 10 6 25 400 16.5 4.5 46 0.37 600 ±30 10* 6* 25* A F UNIT KF10N60F V V O 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB A KF10N60F C mJ mJ V/ns W W/ K O B E G DIM MILLIMETERS


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PDF KF10N60P/F KF10N60P Fig15. Fig16. Fig17. kf10n60 transistor kf10n60 813F2 mosfet KF10N60 TO-220IS kf10n60p
2008 - kf10n60

Abstract: transistor kf10n60 KF10N60FR mosfet KF10N60 FR 152 diode
Text: Revision No : 0 4/7 KF10N60PR /FR Fig12. Transient Thermal Response Curve ( KF10N60P ) 100 , .)= 29.5nC trr(typ.)=150nS @VGS=10V D N A KF10N60PR /FR N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60PR O C F E G B Q I K M L J H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M 15.95 MAX , Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KF10N60PR VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 190 1.52 150 -55 150 D N N H N O P Q UNIT KF10N60FR 600 30 10 6 25 400 16.5 4.5 50 0.4


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PDF 150nS KF10N60PR/FR KF10N60PR Fig15. Fig16. Fig17. kf10n60 transistor kf10n60 KF10N60FR mosfet KF10N60 FR 152 diode
2008 - kf10n60

Abstract: mosfet KF10N60
Text: CHARACTERISTIC SYMBOL O UNIT KF10N60P 1 KF10N60F Drain-Source Voltage VDSS 600 VGSS , 0.2 _ 2.76 + 0.2 PIN CONNECTION TO-220IS (1) ( KF10N60P , KF10N60F ) D G S 2008. 11 , Fig9. Safe Operation Area ( KF10N60P ) 102 15 ( KF10N60F ) 102 101 1ms 10ms 100ms , KF10N60PR /FR Fig12. Transient Thermal Response Curve ( KF10N60P ) Transient Thermal Resistance 100 , SEMICONDUCTOR KF10N60P /F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General


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PDF KF10N60P/F KF10N60P Fig15. Fig16. KF10N60PR/FR Fig17. kf10n60 mosfet KF10N60
MOSFET

Abstract: Planar
Text: RATING CHARACTERISTIC O SYMBOL UNIT KF10N60P 1 KF10N60F Drain-Source Voltage VDSS , Frame PIN CONNECTION TO-220IS (1) ( KF10N60P , KF10N60F ) D G S 2013. 5. 03 Revision No , Operation Area ( KF10N60P ) 102 15 ( KF10N60F ) 102 101 1ms 10ms 100 Operation in , SEMICONDUCTOR KF10N60P /F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF10N60P A This planar stripe MOSFET has better characteristics, such as fast switching


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PDF KF10N60P/F KF10N60P Fig15. Fig16. Fig17. MOSFET Planar
KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: No file text available


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PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
KF10N60

Abstract: No abstract text available
Text: SEMICONDUCTOR KF10N60P /F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES 2010. 8. 16 Revision No : 0 1/7 -


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PDF KF10N60P/F KF10N60
2012 - kf10n60

Abstract: 104 630v KIA3562
Text: 8 3 6 5 D5 U8A6CI R10 1M VDD U1 8 7 6 5 D5 R4 50(1W) SMAV1G Q1 R6 47K KF10N60F R7 47


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PDF KIA3562F/P KIA3562F Limitin80W, 90VAC 270VAC) 46T/4T 250V2A SMFZ18V KF10N60F KIA3562 kf10n60 104 630v KIA3562
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