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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
A53934-000 TE Connectivity (A53934-000) RRA-52G-UTG-608-UK
768766-000 TE Connectivity (768766-000) RRA-52G-TUG-608-UK
CR2703-000 TE Connectivity (CR2703-000) RRA-52G-UTG-608
CR2699-000 TE Connectivity (CR2699-000) RRA-52G-TUG-608
TMS464809 Texas Instruments TMS464809 8 388 608-WORD BY 8-BIT EXTENDED DATA OUT DRAM
TMS465809 Texas Instruments TMS465809 8 388 608-WORD BY 8-BIT EXTENDED DATA OUT DRAM

KU 608 datasheet (4)

Part Manufacturer Description Type PDF
KU608 Others Cross Reference Datasheet Scan PDF
KU608 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
KU608 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
KU608 Tesla Transistor Scan PDF

KU 608 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
KT 819 transistor

Abstract:
Text: BU 112 330 150 >8 BU 112 550 550 12 SU 160 1500 (700) SU 160 1500 (700) BU 406 400 KU 608 210 80 ' >10 BU 112 200 450 KU 608 80 KU 608 40 20 SF 137 D 20 30 75 2N 2219 A 100 25 SSY 20 B 40 60 35 SSY 20 , 1 1 2 550 BU 1 1 2 KU 608 2 10 145 20 >20 120 4 GF 147 S KT 816 W-.BD 236 SF 359 KT 3107 Sh , , KT 817 P 701, KT $17 KT Ì09 KT 805 KU 608 KU 612, C, KT 807 1 KU 612, G,W A A, KT 809 A, 2 3 , KU 607 KU 608 KU 611 KU 612 KUY 12 MA 393 MD 6002 MD 6003 MD 6100 MD 7002 MD 7002 A MD, 7003 A MD


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PDF
1998 - Not Available

Abstract:
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ , FLK107MH-14 X, Ku Band Power GaAs FET POWER DERATING CURVE 10 Total Power Dissipation (W) 8 Drain Current , ) Drain-Source Voltage (V) 2 hadd (%) 40 FLK107MH-14 X, Ku Band Power GaAs +j50 +j25 13 12 14 15 , 1.402 1.521 1.764 1.697 1.225 131.6 114.8 90.5 85.8 79.8 74.2 71.9 60.8 53.5 44.7 30.5 19.7 -4.8 -50.1 , 134.6 125.6 113.9 102.8 89.2 69.0 87.9 3 FLK107MH-14 X, Ku Band Power GaAs FET Case Style "MH"


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PDF FLK107MH-14 FLK102MH-14 FCSI0598M200
1998 - FLK102MH-14

Abstract:
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Edition 1.1 August 1999 G.C.P.: Gain Compression Point 1 FLK107MH-14 X, Ku Band Power GaAs FET , ) Total Power Dissipation (W) 10 FLK107MH-14 X, Ku Band Power GaAs S11 S22 15 14 +j25 , -98.1 1.109 60.8 .044 63.5 .820 142.6 13000 .609 -119.9 1.151 53.5 , S-Parameters, click here 3 FLK107MH-14 X, Ku Band Power GaAs FET 1.0 Min. (0.039) Case Style


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PDF FLK107MH-14 FLK102MH-14 FCSI0598M200 FLK107MH-14
2004 - FLK107MH-14

Abstract:
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Edition 1.2 October 2004 G.C.P.: Gain Compression Point 1 FLK107MH-14 X, Ku Band Power GaAs , Power (dBm) Total Power Dissipation (W) 10 FLK107MH-14 X, Ku Band Power GaAs S11 S22 15 , .659 -98.1 1.109 60.8 .044 63.5 .820 142.6 13000 .609 -119.9 1.151 , FLK107MH-14 X, Ku Band Power GaAs FET 1.0 Min. (0.039) Case Style "MH" Metal-Ceramic Hermetic


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PDF FLK107MH-14 FLK102MH-14 FLK107MH-14
1998 - FLK102MH-14

Abstract:
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Edition 1.1 August 1999 G.C.P.: Gain Compression Point 1 FLK107MH-14 X, Ku Band Power GaAs FET , ) Total Power Dissipation (W) 10 FLK107MH-14 X, Ku Band Power GaAs S11 S22 15 14 +j25 , -98.1 1.109 60.8 .044 63.5 .820 142.6 13000 .609 -119.9 1.151 53.5 , -14 X, Ku Band Power GaAs FET 1.0 Min. (0.039) Case Style "MH" Metal-Ceramic Hermetic Package


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PDF FLK107MH-14 FLK102MH-14 FCSI0598M200 FLK102 FLK107MH-14 KU 608
FLK107MH-14

Abstract:
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES • High Output Power: P1dB = 30.0dBm(Typ.) â , Compression Point Edition 1.1 August 1999 FUJITSU FLK107MH-14 X, Ku Band Power GaAs FET POWER DERATING , FLK107MH-14 X, Ku Band Power GaAs FET S-PARAMETERS VDS = 10V, IDS = 250171A FREQUENCY (MHZ) MAG S11 ANG , .043 63.7 .827 156.0 12000 .699 -76.9 1.032 71.9 .049 62.1 .825 149.9 12500 .659 -98.1 1.109 60.8 , .108 -107.7 .654 69.0 16000 .878 -174.9 1.225 -99.6 .158 -171.2 .226 87.9 FUJITSU FLK107MH-14 X, Ku


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PDF FLK107MH-14 FLK102MH-14 FCSI0598M200 FLK107MH-14 fujitsu gaas fet
2004 - Not Available

Abstract:
Text: FLK107MH-14 X, Ku Band Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 30.0dBm(Typ , FLK107MH-14 X, Ku Band Power GaAs FET POWER DERATING CURVE 10 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE , -14 X, Ku Band Power GaAs +j50 +j25 13 12 14 15 +j100 SCALE FOR |S21| S11 S22 +90° 1.6 , 74.2 71.9 60.8 53.5 44.7 30.5 19.7 -4.8 -50.1 -99.6 .023 .028 .039 .038 .039 .043 .049 .044 .045 .045 , , Ku Band Power GaAs FET Case Style "MH" Metal-Ceramic Hermetic Package 1.0 Min. (0.039) 2


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PDF FLK107MH-14 FLK102MH-14
Katalog tesla tranzistor

Abstract:
Text: Tranzistory 70 W v kovovém pouzdru KU Y12 A Tranzistory 120 W v kovovém pouzdru KUX41N A V Y S V E T IIV


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PDF KC31S K03773 K0336 K0338 VQ0321 C22fc KUY12 KUV12 Katalog tesla tranzistor KD502 KD3055 KD617 KU607 KU612 Tesla katalog KD602 kd 617 KU605
MR28800

Abstract:
Text: series KU and plain case series KUP relays. Stock Mfr.’s Term. EACH No. Type Type 1-24 25-49 50-99 , styles of 886-5004• 27E893‡ Screw 10.34 9.32 8.45 7.80 screw terminal sockets — KU series 27E121, 27E867 , Screw Term. 8.05 7.24 6.58 6.08 886-1455. 35D013. 1-24 .EACH 23.49 50-99


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PDF 27E396 27E043 27E046 27E121 24A110 20C228* 35D013 35D203 35D227 MR28800 20C250 27E891 27E892 27E893 MT RELAYS MT78740 MT78740 11 pin relay
1996 - IS0103

Abstract:
Text: Provide Full Compliance with EIA­ 608 Specifications for Extended Data Services Automatic Extraction and , of 1990, and in accordance with the Electronics Industry Association specification 608 (EIA­ 608 ). The , EIA­ 608 . The Z86229 can recover and display data transmitted on any of these nine data channels. The , is further defined in the EIA­ 608 specification. The on-chip XDS filters in the Z86229 are fully , the Z86229 to switch back to Extended Characters. Extended Features The EIA­ 608 specification has


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PDF
Transistor KU 607 VC

Abstract:
Text: ren ce po w e r supply ou tput pin P ow er save pin o o Ps V 608 M in n < Standard & , Typical 520 Max Unit kHz Conditions Rt = 10 k ii, C t = 120 pF Rt = 10 kU , C t = 120 pF, Vc c , , = 10 k£2, C ,= 120 pF Rt = lO k ii, C t = 120 pF R, = lO k ii R, = 10 kU 7 5 4 1.28 1.92 0.76 80


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PDF BA9702FS BA9702FS SSOP-A24 SSOP-A24) RCR-110D Transistor KU 607 VC KU 607 VC
1-111506-1

Abstract:
Text: : J kU k. J -4. 1 9 [. 1 65] TYP 1 .57 R [.062] TYP TYP /\ SPACES AT 1.27 [.050] STAGGERED SPACING , 80.67 T3. 1 761 73.76 r 2 .9 O 4l 60.8 1 T2.3941 26.67 r i. o 5 oi 2 1 43 44 2-111506-5 A 68.68 r 2 .7 , r 2 .9 O 4l 60.8 1 T2.3941 26.67 r i. o5oi 2 1 43 44 1-111506-0 A 68.68 r 2 .7 O 4~| 64.57 2.542


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PDF ECQ-06-020813 25/OCT/06 1-111506-1 M 6965 QQ-B-750
87R2

Abstract:
Text: t: J kU k. J -4. 1 9 [. 1 65] TYP 1 .57 R [.062] TYP 1 4.48+0.38 [.570+.01 5] TYP TYP , r 2 .7 42] 68.38 r 2 . 6 9 2] 80.67 [3.176] 73.76 [ 2 .9 O 4] 60.8 1 [2.394] 26.67 [ 1 .0 5 O] 2 1 , [ 2 .9 O 4] 60.8 1 [2.394] 26.67 [ 1 .0 5 O] 2 1 43 44 1-111494-0 A 68.68 r 2 .7 O 4] 64.57 2.542


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PDF ECQ-06-02081 130CT06 87R2 M 6965
low noise hemt

Abstract:
Text: EC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2623 is a X/ Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer. D S D G G S It is available in chip form and in BMH204 package. D = Drain G = Gate S = , 23.7 21.8 20.2 19.1 S22 dB - 6.08 -6.48 -6.92 -7.31 -7.65 -7.95 -8.20 -8.52 -8.89 -9.32


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PDF EC2623 12GHz EC2623 BMH204 12GHz DSEC26237003 low noise hemt low noise x band hemt transistor low noise hemt transistor BMH204 TC2623 transistor HEMT GaS
49mc

Abstract:
Text: Impedance 1 75 2 — KU Output Current — — ±40 mA Output Impedance — 0.1 — n Capacitive Load 100 , CABOT BOULEVARD, MANSFIELD, MA 02048-1194 TEL. ( 608 ) 339-3000 / TELEX 174388/ FAX (508) 339-6356 OATEL


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PDF SHM-49 SHM-49 DS-0239A 49mc SHM-49MM datel shm "FET Input Amplifier" SHM-49MC SHM49M
LM2901PWLE

Abstract:
Text: mW/°C 9.2 mW/°C 5.6 mW/°C DERATE ABOVE TA 31 °C 25°C 68°C Ta = 70D C POWER RATING 608 mW 496 , 30 V, V q = 1.4 V V q = 1.4 V V q = 1.4 V 0 to V c c -1 -5 V c c = 15V, R|_ > 15 kU to V q q > > V q , R[_ connected to 5 V through 5.1 kU Cj_ = 15 p F t, See Note 4 100-mV input step with 5


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PDF LM139, LM139A, LM239, LM239A. LM339 LM339A, LM339Y, LM2901, LM2901Q SLCSQ06C LM2901PWLE LM2901QD LM2901QN SLCS006C LM139-N
jiA741

Abstract:
Text: 9.2 mW/°C TA = 70°C POWER RATING 608 mW 736 mW TA = 85-C POWER RATING 494 mW 598 mW Te x a , fì Vo m Peak output voltage swing* RL = 10 k a VCC+ = 5 V to 30 V V q = 1.7 V to 3.3 V, R|_ = 2 , otRerwise noted) PARAMETER SR tr tf TEST CONDITIONS V| - ±10 V. C L = 100 pF, RL = 2 kU . See Figure 1


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PDF MC3303, MC3403 MC3403 11N--[ MC3303 jiA741 SLOS101
2011 - 1 928 405 766

Abstract:
Text: < Low Noise GaAs HEMT > MGF4941AL Micro-X type plastic package DESCRIPTION The MGF4941AL super-low noise InGaAs HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f , 0.22 60.8 0.197 0.25 86.2 0.155 0.29 119.2 0.102 0.32 147.6 0.062 0.35 173.6 0.069 0.40 -143.9 0.083 , 0.924 0.926 0.939 0.961 0.968 (ang) 167.0 154.5 142.2 129.1 117.1 104.8 92.6 81.3 70.7 60.8 51.6 42.8


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PDF MGF4941AL MGF4941AL 12GHz 4000pcs 1 928 405 766 GD-32 rogers 4403
2007 - top 261

Abstract:
Text: MITSUBISHI SEMICONDUTOR 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ , 0.370 0.20 37.2 0.262 0.22 60.8 0.197 0.25 86.2 0.155 0.29 119.2 0.102 0.32 147.6 0.062 , 129.1 117.1 104.8 92.6 81.3 70.7 60.8 51.6 42.8 34.7 26.9 19.2 11.6 5.2 0.1 -3.7 -8.4


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PDF 18/May/2007 MGF4941AL MGF4941AL 12GHz GD-32 4000pcs top 261 GD-32 InGaAs HEMT mitsubishi
2007 - GD-32

Abstract:
Text: MITSUBISHI SEMICONDUTOR Dec./2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ , 0.20 37.2 0.262 0.22 60.8 0.197 0.25 86.2 0.155 0.29 119.2 0.102 0.32 147.6 0.062 0.35 , 129.1 117.1 104.8 92.6 81.3 70.7 60.8 51.6 42.8 34.7 26.9 19.2 11.6 5.2 0.1 -3.7 -8.4


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PDF MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 fet K 727
2006 - GD-32

Abstract:
Text: Preliminary 26/Dec./2006 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION C to K , 104.8 92.6 81.3 70.7 60.8 51.6 42.8 34.7 26.9 19.2 11.6 5.2 0.1 -3.7 -8.4 -13.1 -18.2 (VDS=0V,VGS


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PDF 26/Dec MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 MGF4941
2007 - mgf4941al

Abstract:
Text: Preliminary 19/Jan./2007 MITSUBISHI SEMICONDUTOR MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION C to K band low , 154.5 142.2 129.1 117.1 104.8 92.6 81.3 70.7 60.8 51.6 42.8 34.7 26.9 19.2 11.6 5.2 0.1 -3.7 -8.4 -13.1


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PDF 19/Jan MGF4941AL MGF4941AL 12GHz GD-32 4000pcs GD-32 MITSUBISHI electric R22
Not Available

Abstract:
Text: TOSHIBA THM324000BS/BSG60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT DYNAMIC RAM MODULE Description The THM324000BS/BSG is a 4,194,304 words by 32 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ on the printed circuit board. This module can be used as well as 8,388, 608 words by 16 bits dynamic RAM module, by means of connecting DQO and DQ16, DQ1 and DQ17, DQ2 and D Q 18,., DQ15 and , a e l e c t r o n ic com ponents ÎL Ü m % $ H I-' n OOOO oooo £ kU >NJ~* S 2


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PDF THM324000BS/BSG60/70 THM324000BS/BSG TC5117400BSJ DM16010794 THM324000BS/BSG-60/70 324000BS/BSG 08MAX. THM324000BS
SN75130

Abstract:
Text: D 950 mW 7.6 mW/°C 608 mW N 1150 mW 9.2 mW/°C 736 mW Texas . Instruments POST OFFICE BOX 655303 , Vcc = 5 V, Rl = 2 kU Cl = 15 pF, See Figures 1 and 2 45 ns Propagation delay time, PHL


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PDF SN75130 SLLS077A- D3406, GA22-6974-3 SN75ALS130) MC3485 SN75130 21EN22 D3406 SN75125 SN75127 SN75129 SN75ALS130
FM STEREO DECODER

Abstract:
Text: Filter Stereo Indicator Lock Detector Filter Loop Filter Ground 608 kHz Resonator Notes - Rs = 27.8 k£2 Rs = 20 kU Rs = 1 k ii Rs = 1 k ii Rs = 20 k£i Rs = 27.8 k n - - - - - - R( n = 25 k ii [1


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PDF ULN3827A FM STEREO DECODER FM Stereo Decoder Integrated Circuit 16 pin 19 khz fm stereo decoder circuit 19KHZ
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