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LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

KT 819 transistor Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Text: D,P 9 BC 109C 9 25 1,2 1,2 2N 2N 2H KT 2 1 Ï KT KT KT SP 3055, KT 819 GM 3055, KT 819 GM 3055, KT 819 GM 819 GM 3055, KT 819 GM 818 GM 818 GM 818 GM 235, SP 137 D 2 1 5 3 3 3 3 3 3 3 3 !9 20 20 , 817 G KT 817 W KT 818 A KT 818 B KT 818 G KT 818 W KT 819 A KT 819 B KT 819 G KT 819 W KT 3107 A KT , 817 W KT 817 G KT 817 W KT 818 W KT 818 W KT 818 G KT 818 W KT 819 W KT 819 W KT 819 G KT 819 W KT , 1-6, siehe Abweichungen gegen über Originaltyp) Abweich ungen gegen über Originaltyp KT 326B KT


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1999 - TRANSISTOR KT 838

Abstract: KT 819 transistor 2SC4854
Text: Ordering number:EN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions · Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). unit:mm 2018B , , Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12099HA ( KT )/41894HO (KOTO) AX-9521 No.4579­1/4 2SC4854 , 90.1 0.136 54.6 0.551 ­43.0 1200 0.257 ­108.4 2.940 81.9 0.153 54.3


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PDF EN4579 2SC4854 S21e2 2018B 2SC4854] TRANSISTOR KT 838 KT 819 transistor 2SC4854
1999 - KT 819 transistor

Abstract: c 4977 transistor TRANSISTOR KT 837 specifications ic 7405 EN5043 2SC4868 50431
Text: Ordering number:EN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. unit:mm 2018B , TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 12099HA ( KT )/31395YK , 0.832 ­25.0 400 0.522 ­ 81.9 8.438 115.9 0.070 58.2 0.648 ­35.5 600


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PDF EN5043 2SC4868 S21e2 2018B 2SC4868] KT 819 transistor c 4977 transistor TRANSISTOR KT 837 specifications ic 7405 EN5043 2SC4868 50431
D 1413 transistor

Abstract: KT 819 transistor
Text: Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions •Low noise : N F= l.0dB typ (f= IG H z). •High gain : | S21 e 1 =12dB typ (f= l GHz). 2 •High cutoff frequency : fj=7GHz typ , ., 1-10, 1 Chôme, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20599TH ( KT )/20696YK/3I395YK (KOTO)TA-OI56 No , -51.2 1000 0.566 -150.7 2.995 81.9 0.125 35.7 0.434 -54.5 1200 0.555


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PDF EN5036B 2SC5231 0021b2b D 1413 transistor KT 819 transistor
2010 - KT 819

Abstract: No abstract text available
Text: 2.15X1.7mm SMD LED WITH CERAMIC SUBSTRATE Part Number: KT -2117QB25Z1S-VFS Blue ATTENTION , =150mA [Typ.] Symbol peak dom [1] Value 445 450 20 2.7 VF [2] 3.5 4.0 IR 10 8.19 A lm/W nm/ ° C nm/ ° C mV , . Dice Lens Type Luminous Intensity [2] Iv(cd)@ 150mA Min. KT -2117QB25Z1S-VFS Blue (InGaN) WATER CLEAR , PAGE: 3 OF 8 ERP: 1212000207 KT -2117QB25Z1S-VFS SPEC NO: DSAK2885 APPROVED: WYNEC REV NO: V , : 1212000207 KT -2117QB25Z1S-VFS Reflow soldering is recommended and the soldering profile is shown below


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PDF KT-2117QB25Z1S-VFS 15mmX 2000pcs DSAK2885 JAN/07/2010 KT 819
1999 - KT 819 transistor

Abstract: kt 784 KT 818 55123 2SC5347 kt 814 09PF8
Text: Ordering number:EN5512A NPN Epitaxial Planar Silicon Transistor 2SC5347 High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications Features Package Dimensions · High frequency medium output amplification (VCE=5V, IC=50mA) : fT=4.7GHz typ (f=1GHz). : S21e2 , TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21599TH ( KT )/91296YK , 6.428 81.9 0.089 73.7 0.149 ­72.3 500 0.359 169.3 5.293 77.6 0.110


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PDF EN5512A 2SC5347 S21e2 2SC5347] 25max KT 819 transistor kt 784 KT 818 55123 2SC5347 kt 814 09PF8
1999 - 2SC5374

Abstract: KT 819 transistor Specification zo 607
Text: Ordering number:EN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions · High gain : S21e =10.5dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. 2 unit:mm 2106A [2SC5374] 0.75 0.6 0.4 0.3 , 21599TH ( KT )/91296YK (KOTO) TA-0806 No.5535­1/5 2SC5374 No.5535­2/5 2SC5374 S Parameters , 81.9 0.155 29.9 0.361 ­74.3 1000 0.568 ­164.2 2.218 73.4 0.161 30.0


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PDF EN5535A 2SC5374 2SC5374] 2SC5374 KT 819 transistor Specification zo 607
1999 - 2sc5231

Abstract: 2SC5231A KT 819 transistor marking c7 TA-0156
Text: Ordering number:EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions unit:mm 2106A [2SC5231] 0.75 0.6 0.3 0.4 · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High , , TOKYO, 110-8534 JAPAN 20599TH ( KT )/20696YK/31395YK (KOTO) TA-0156 No.5036­1/5 2SC5231 Continued , 0.120 35.8 0.475 ­51.2 1000 0.566 ­150.7 2.995 81.9 0.125 35.7 0.434


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PDF EN5036B 2SC5231 2SC5231] S21e2 2SC5231applied 2sc5231 2SC5231A KT 819 transistor marking c7 TA-0156
KT 819

Abstract: LTJ3
Text: cr T in t Rev i s i on Da ! e C om m ercial Tolsron« Sym. S il S I t ä iä l * B A '05. 8.19 Change o f tap in g dim ension, t - + 0 .2 '0 5 .1 2 . 1 C la r if ic a t io n of construct ion of c ir c u it . À n Signed Checked SBfll 0 i$ ltj3 P M 'it m m K.T K r K.n K.T K Y K.O /\ Por t s lis t Ma t e r i a 1 # « P P H S . Res i n p p s i i N o -P a r t name ¡2^ $ £, £ L ever 1 W<- C as e 2 'r -X Term i n a i 3 iSrF Contact piece 4 R em arks IB * 9 4 V -0 9 4 V -0


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PDF 151-E -15iw-ese22mv21 KT 819 LTJ3
2004 - Not Available

Abstract: No abstract text available
Text: RF Transformer Configuration Type: ADT2-1T Insertion Loss Frequency MHz RATIO 2 0.40-450 3 dB MHz 0.40450 2 dB MHz 0.60400 1 dB MHz 1.00200 Case Style Connection CD542 kt Pin Connections Primary Primary Second- Second- Second- Gnd Case Not Port Primary Dot CT ary Dot ary ary CT Ext. Gnd Used kt 3 1 6 4 5 2 Notes: · FOR A AND B CONFIGURATIONS: Typical Amplitude Unbalance: 0.1 dB over 1 dB , 9.43 9.06 8.95 8.86 8.77 8.68 8.61 8.52 8.43 8.34 445.000 450.000 1.36 1.37 8.27 8.19 Back


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PDF CD542
DME 2000

Abstract: BEF-KHS-K01 din 43651 BEF-WG-W12 Sensick WTa 24-2 BEF-WN-M30 BEF-GH-Mini01 sick Sensors wll 170 BEF-S-R2-16 BEF-KHS-C01
Text: 18, MM 18, CM 18 IM 30, CM 30 V 18, IM 18, MM 18, CM 18 WTR WLG 12 KT 2 KT 2 KT 2 KT 2 KT 2 KT 3 DS 60 WTA 24 DME 2000/3000 DMH/DMP DMT/DML LUT ISD 230/260/280 Mounting bracket , 4 027 532 BEF-W250 BEF-W260 5 305 850 5 304 819 BEF-WN-W27 BEF-WN-W23 BEF-WN-W32 , 250, P 250 F, PL 30 A, PL 40 A, PL 50 A, PL 80 A, C 110 W 14-2, W 18-3 W 11, W 12-2, W 12L-2, KT 2 W 30, W 32, W 34, W 36 PL 20 A, PL 20 F, P 250, P 250 F, W 260 W 24-2, W 24 Exi, WTA 24, KT 5, KT


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PDF 130-S13, 130-S33* BEF-130-ST DME 2000 BEF-KHS-K01 din 43651 BEF-WG-W12 Sensick WTa 24-2 BEF-WN-M30 BEF-GH-Mini01 sick Sensors wll 170 BEF-S-R2-16 BEF-KHS-C01
2010 - Not Available

Abstract: No abstract text available
Text: 2.15X1.7mm SMD LED WITH CERAMIC SUBSTRATE Part Number: KT -2117QB25Z1S-VFS Blue ATTENTION , dom [1] Value 445 450 20 2.7 VF [2] 3.5 4.0 IR 10 8.19 A lm/W nm/ ° C nm/ ° C mV/ ° C V Unit nm nm nm , Type Luminous Intensity [2] Iv(cd)@ 150mA Min. KT -2117QB25Z1S-VFS Blue (InGaN) WATER CLEAR 0.48 Typ , PAGE: 3 OF 9 ERP: 1212000207 KT -2117QB25Z1S-VFS SPEC NO: DSAK2885 APPROVED: WYNEC REV NO: V , 9 ERP: 1212000207 KT -2117QB25Z1S-VFS Reflow soldering is recommended and the soldering profile


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PDF KT-2117QB25Z1S-VFS 15mmX 2000pcs DSAK2885 MAY/20/2010
2008 - 2SC5347

Abstract: ITR08157 ITR08158 ITR08159 ITR08160
Text: 2SC5347 Ordering number : EN5512C SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347 High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications Features · High-frequency medium output amplification (VCE=5V, IC=50mA) : fT , -00000075 / 21599 TH ( KT ) / 91296 YK (KOTO) TA-0689 No.5512-1/6 2SC5347 Package Dimensions unit : mm (typ , 174.9 6.428 81.9 0.089 73.7 0.149 -72.3 500 0.359 169.3 5.293 77.6


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PDF 2SC5347 EN5512C S21e2 2SC5347 ITR08157 ITR08158 ITR08159 ITR08160
2008 - ITR08169

Abstract: 2SC5374 ITR08168 ITR08170 ITR08171 ITR08172
Text: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB · High gain : typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. unit:mm 2106A [2SC5374] 0.75 0.6 0.3 0.4 3 , JAPAN 30105TN (PC)/21599TH ( KT )/91296YK (KOTO) TA-0806 No.5535­1/5 2SC5374 IC - VCE 35 IC , 2.716 81.9 0.155 29.9 0.361 ­74.3 1000 0.568 ­164.2 2.218 73.4 0.161


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PDF ENN5535A 2SC5374 S21e2 2SC5374] ITR08169 2SC5374 ITR08168 ITR08170 ITR08171 ITR08172
2008 - 2SC5231

Abstract: ITR07963 ITR07964 ITR07965 ITR07966 ITR07967 Specification zo 607 marking C7
Text: Ordering number:ENN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Ultrasmall , JAPAN 30105TN (PC)/20599TH ( KT )/20696YK/31395YK (KOTO) TA-0156 No.5036­1/5 2SC5231 Continued from , 0.120 35.8 0.475 ­51.2 1000 0.566 ­150.7 2.995 81.9 0.125 35.7 0.434


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PDF ENN5036B 2SC5231 S21e2 2SC5231] 2SC5231 ITR07963 ITR07964 ITR07965 ITR07966 ITR07967 Specification zo 607 marking C7
2005 - Not Available

Abstract: No abstract text available
Text: Ordering number:ENN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : S21e2=12dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Ultrasmall package permiting applied , TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30105TN (PC)/20599TH ( KT , 116.7 101.4 90.4 81.9 74.2 67.5 62.0 55.9 50.9 | S12 | 0.038 0.067 0.098 0.112 0.120 0.125 0.131 0.137


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PDF ENN5036B 2SC5231 S21e2 2SC5231]
2005 - TRANSISTOR KT 837

Abstract: a1046 transistor A1046 A1684
Text: Ordering number:ENN5535A NPN Epitaxial Planar Silicon Transistor 2SC5374 VHF to UHF Band OSC, High-Frequency Amplifiers Applications Features Package Dimensions S21e2=10.5dB · High gain : typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. unit:mm 2106A [2SC5374] 0.75 0.6 0.3 , , TOKYO, 110-8534 JAPAN 30105TN (PC)/21599TH ( KT )/91296YK (KOTO) TA-0806 No.5535–1/5 2SC5374 IC - , €“65.6 800 0.581 –153.9 2.716 81.9 0.155 29.9 0.361 –74.3 1000 0.568 â


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PDF ENN5535A 2SC5374 2SC5374] TRANSISTOR KT 837 a1046 transistor A1046 A1684
2008 - KT 819 transistor

Abstract: 2SC4868 ITR07675 ITR07676 ITR07677 ITR07678 TRANSISTOR KT 837
Text: Ordering number:ENN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. unit:mm 2018B 0.4 , , Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21005TN (PC)/12099HA ( KT )/31395YK (KOTO) TA-0245 No.5043­1/4 , ­ 81.9 8.438 115.9 0.070 58.2 0.648 ­35.5 600 0.411 ­104.5 6.284 101.5


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PDF ENN5043 2SC4868 S21e2 2018B 2SC4868] KT 819 transistor 2SC4868 ITR07675 ITR07676 ITR07677 ITR07678 TRANSISTOR KT 837
2008 - CE1M

Abstract: TRANSISTOR KT 838 KT 819 transistor 2SC4854 ITR07592 ITR07593 ITR07594 ITR07595 AX-9521
Text: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions · Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). , Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21005TN (PC)/12099HA ( KT )/41894HO , ­95.4 3.365 90.1 0.136 54.6 0.551 ­43.0 1200 0.257 ­108.4 2.940 81.9


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PDF ENN4579 2SC4854 S21e2 2018B 2SC4854] CE1M TRANSISTOR KT 838 KT 819 transistor 2SC4854 ITR07592 ITR07593 ITR07594 ITR07595 AX-9521
2005 - KT 819 transistor

Abstract: TRANSISTOR KT 838
Text: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features · Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Package Dimensions unit , ., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21005TN (PC)/12099HA ( KT )/41894HO (KOTO) AX , | 7.561 5.976 4.789 3.976 3.365 2.940 2.600 2.340 2.135 1.989 S21 147.5 125.9 111.3 99.3 90.1 81.9 75.1


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PDF ENN4579 2SC4854 S21e2 2018B 2SC4854] KT 819 transistor TRANSISTOR KT 838
2006 - Not Available

Abstract: No abstract text available
Text: Ordering number : EN5512B 2SC5347 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347 Features · High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications High-frequency medium output amplification (VCE=5V, IC=50mA) : fT , , TOKYO, 110-8534 JAPAN 72006AB MS IM TC-00000075 / 21599 TH ( KT ) / 91296 YK (KOTO) TA-0689 No.5512-1/6 , 81.9 77.6 73.5 69.9 66.4 62.9 59.4 56.5 53.0 S12 0.027 0.047 0.068 0.089 0.110 0.130 0.151 0.171 0.191


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PDF EN5512B 2SC5347 S21e2 900mm2
2005 - specifications ic 7405

Abstract: KT 819 transistor
Text: Ordering number:ENN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=1GHz). · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ. Package Dimensions unit:mm 2018B [2SC4868 , , TOKYO, 110-8534 JAPAN 21005TN (PC)/12099HA ( KT )/31395YK (KOTO) TA-0245 No.5043­1/4 2SC4868 5 3 2 , 0.522 0.411 0.342 0.304 0.278 0.263 0.254 0.252 0.253 S11 ­49.0 ­ 81.9 ­104.5 ­122.0 ­136.2 ­150.8


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PDF ENN5043 2SC4868 S21e2 2018B 2SC4868] specifications ic 7405 KT 819 transistor
2006 - Not Available

Abstract: No abstract text available
Text: Ordering number : EN5512C 2SC5347 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5347 Features · High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifier Applications High-frequency medium output amplification (VCE=5V, IC=50mA) : fT , ( KT ) / 91296 YK (KOTO) TA-0689 No.5512-1/6 2SC5347 Package Dimensions unit : mm (typ) 7007A-004 , 3.774 3.334 2.995 2.725 2.494 2.307 S21 105.9 93.3 86.8 81.9 77.6 73.5 69.9 66.4 62.9 59.4 56.5 53.0 S12


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PDF EN5512C 2SC5347 S21e2 900mm2
Philips ECG 812

Abstract: transistor KT 816 ECG1110
Text: 17E 0 hbSBTSfl 000403a b T-74-05-01 let Top* Titg Kt mWi C MVIEI IEIATIHC , limit of Instantaneous value, while the power transistor Is cut-off. ECG1110 816 P H IL IP S E , i n n i 819 ECG1110


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PDF ECG1110 T-74-05-01 ODO4034 bb53c 000403S T-74-05- Philips ECG 812 transistor KT 816 ECG1110
2002 - compensation transistor KT

Abstract: XINGER 1D1304-3 BAP50-05 BAS50-04 an10174-01 1D1304-3 PMBT3906 kt series transistor
Text: current for the PIN diode IS2 = Saturation current for the base junction of the transistor V1 - V2 = the base to emitter voltage of the transistor (V2 < 0) q 40 at room temperature KT 0.8 -5 , current is in the region of 10-100 uA. The control impedance3 (impedance of KT . If driven by a the , 4. Transistor Shunt. V2 is < 200 mV. The complete circuit is shown in Figure 5. The hybrid is a , 1 I1 = I S1 (e KT - 1) Figure 5 . Circuit with Two Diodes and Hybrid. D5 and D6 are Philips


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PDF AN10174-01 BAP50-05 100E-12 compensation transistor KT XINGER 1D1304-3 BAS50-04 an10174-01 1D1304-3 PMBT3906 kt series transistor
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